Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Experimental study study of antiproton-proton annihilation into a pair of charged Pi-Mesons or K-Mesons for incident antiproton mementa in the range from 0.72 GeV/c to 2.62 GeV/c

The cross sections for the two antiproton-proton annihilation-in-flight modes,

ˉp + p → π⁺ + π^-

ˉp + p → k⁺ + k^-

were measured for fifteen laboratory antiproton beam momenta ranging from 0.72 to 2.62 GeV/c. No magnets were used to determine the charges in the final state. As a result, the angular distributions were obtained in the form [dσ/dΩ (Θ_C.M.) + dσ/dΩ (π – Θ_C.M.)] for 45 ≲ Θ_C.M. ≲ 135°.

A hodoscope-counter system was used to discriminate against events with final states having more than two particles and antiproton-proton elastic scattering events. One spark chamber was used to record the track of each of the two charged final particles. A total of about 40,000 pictures were taken. The events were analyzed by measuring the laboratory angle of the track in each chamber. The value of the square of the mass of the final particles was calculated for each event assuming the reaction

ˉp + p → a pair of particles with equal masses.

About 20,000 events were found to be either annihilation into π ^±-pair or k ^±-pair events. The two different charged meson pair modes were also distinctly separated.

The average differential cross section of ˉp + p → π⁺ + π^- varied from ~ 25 µb/sr at antiproton beam momentum 0.72 GeV/c (total energy in center-of-mass system, √s = 2.0 GeV) to ~ 2 µb/sr at beam momentum 2.62 GeV/c (√s = 2.64 GeV). The most striking feature in the angular distribution was a peak at Θ_C.M. = 90° (cos Θ_C.M. = 0) which increased with √s and reached a maximum at √s ~ 2.1 GeV (beam momentum ~ 1.1 GeV/c). Then it diminished and seemed to disappear completely at √s ~ 2.5 GeV (beam momentum ~ 2.13 GeV/c). A valley in the angular distribution occurred at cos Θ_C.M. ≈ 0.4. The differential cross section then increased as cos Θ_C.M. approached 1.

The average differential cross section for ˉp + p → k⁺ + k^- was about one third of that of the π^±-pair mode throughout the energy range of this experiment. At the lower energies, the angular distribution, unlike that of the π^±-pair mode, was quite isotropic. However, a peak at Θ_C.M. = 90° seemed to develop at √s ~ 2.37 GeV (antiproton beam momentum ~ 1.82 GeV/c). No observable change was seen at that energy in the π^±-pair cross section.

The possible connection of these features with the observed meson resonances at 2.2 GeV and 2.38 GeV, and its implications, were discussed.

Quantificação da área ocupada pela guta-percha e pelo Resilon em canais achatados após termoplastificação

O presente trabalho teve por objetivo quantificar, comparativamente, a área de preenchimento de dois materiais obturadores sólidos, cones de guta-percha (GP) e cones de Resilon (R), no terço apical de incisivos inferiores humanos, ex vivo, obturados pela técnica da onda contínua de condensação. Os espécimes foram submetidos a um protocolo, desde a cirurgia de acesso até o final do preparo químico-mecânico e divididos aleatoriamente em dois grupos, de 21 dentes cada, de acordo com o material utilizado. Não foi utilizado cimento endodôntico em nenhuma das amostras. Após a obturação, as amostras foram seccionadas transversalmente em dois níveis, a 3 e a 5mm do ápice, e subdivididas em grupos de acordo com a altura de corte e do material obturador, sendo estabelecido: GP3 (guta-percha com corte a 3mm), GP5 (guta-percha com corte a 5mm), R3 (Resilon com corte a 3mm) e R5 (Resilon com corte a 5mm). Posteriormente, as amostras foram submetidas a um processo de lixamento e polimento e examinadas em microscópio óptico por reflexão com aumento de 50x a 100x. Para a análise e processamento digital das imagens, foi utilizado o sistema de imagens Axio Vision 4.6 para Windows, sendo obtidas as medidas para cada área observada em micrômetros (μm); uma da área da cavidade, e outra da área de material obturador. Foi aferido o grau de circularidade de cada amostra, por uma fórmula matemática utilizada automaticamente pelo programa, onde 1 (um) é considerado o círculo perfeito e, quanto mais achatado o canal, mais tendente a 0 (zero) nesta escala. Obteve-se a área do canal, a circularidade de 0 a 1, a área preenchida pelo material obturador e, a porcentagem da área de preenchimento do material obturador em relação à área do canal. Foi realizado o cruzamento dos grupos dois a dois pelo teste t de Student, sendo verificada diferença estatisticamente significante entre os grupos GP3 e R3, tendo o grupo R3 apresentado maior porcentagem de área do canal radicular preenchida pelo material obturador em suas amostras (p<0,05). Na relação da circularidade com a quantidade de preenchimento, com o teste de Correlação de Pearson, não foi observada forte correlação entre a forma final do canal (relação de circularidade) e a quantidade de preenchimento do canal radicular pelos materiais obturadores testados. Conclui-se que houve grande variação de preenchimento mínimo e máximo em todos os grupos testados e o Resilon apresentou maior porcentagem de preenchimento de área do canal radicular em suas amostras.

Inelastic K+p reactions at incident momenta from 1.37 GeV/c to 2.17 GeV/c

A number of recent experiments have suggested the possibility of a highly inelastic resonance in K⁺p scattering. To study the inelastic K⁺p reactions, a 400 K exposure has been taken at the L.R.L. 25 inch bubble chamber. The data are spread over seven K⁺ momenta between 1.37 and 2.17 GeV/c.

Cross-sections have been measured for the reaction K⁺p → pK°π+ which is dominated by the quasi-two body channels K∆ and K*N. Both these channels are strongly peripheral, as at other momenta. The decay of the ∆ is in good agreement with the predictions of the rho-photon analogy of Stodolsky and Sakurai. The data on the K*p channel show evidence of both pseudo scalar and vector exchange.

Cross-sections for the final state pK⁺π+π- shows a strong contribution from the quasi-two body channel K*∆. This reaction is also very peripheral even at threshold. The decay angular distributions indicate the reaction is dominated as at higher momenta by a pion exchange mechanism. The data are also in good agreement with the quark model predictions of Bialas and Zalewski for the K* and ∆ decay.

Photodisintegration of helium-3 at energies between 200 and 600 MEV

We have measured differential cross-sections for the two-body photodisintegration of Helium-3, ɣ + He³ → p + d, between incident photon energies of 200 and 600 MeV, and for center of mass frame angles between 30° and 150°. Both final state particles were detected in arrays of wire spark chambers and scintillation counters; the high momentum particle was analyzed in a magnet spectrometer. The results are interpreted in terms of amplitudes to produce the ∆(1236) resonance in an intermediate state, as well as non-resonant amplitudes. This experiment, together with an (unfinished) experiment on the inverse reaction, p + d → He³ + ɣ, will provide a reciprocity test of time reversal invariance.

Avaliação numérica de estabilidade lateral de vigas casteladas

Restrições de espaço e altura são frequentemente impostas às edificações residenciais, comerciais, industriais, depósitos e galpões com um ou diversos pavimentos em função de aspectos de regulamentos regionais, técnicos, econômicos ou ainda de natureza estética. A fim de proporcionar a passagem de tubulações e dutos de grande diâmetro sob vigas de aço, grandes alturas são normalmente requeridas, demandando por vezes, magnitudes de altura inviáveis entre pavimentos de edificações. Diversas soluções estruturais podem ser utilizadas para equacionar tais obstáculos, onde dentre outras, pode-se citar as vigas com inércia variável, stub-girders, treliças mistas, vigas misuladas e vigas com uma ou múltiplas aberturas na alma com geometrias variadas. No que tange às vigas casteladas, solução estrutural pautada neste estudo, a estabilidade é sempre um motivo de preocupação tipicamente durante a construção quando os contraventamentos laterais ainda não estão instalados. De qualquer forma, o comprimento destravado em geral alcançado pelos vãos destas vigas, são longos o suficiente para que a instabilidade ocorra. Todavia, o acréscimo substancial da resistência à flexão de tais membros devido ao aumento da altura oriundo de seu processo fabril em relação ao perfil matriz, aliada a economia de material e utilidade fim de serviço, garante a atratividade no aproveitamento destas, para grandes vãos junto aos projetistas. Não obstante, este aumento proporcional no comprimento dos vãos faz com que a instabilidade lateral ganhe importância especial. Neste contexto, o presente trabalho tem por objetivo desenvolver um modelo numérico que permita a realização de uma avaliação paramétrica a partir da calibração do modelo com resultados experimentais, efetuar a análise do comportamento de vigas casteladas e verificar seus mecanismos de falha, considerando comportamento elasto-plástico, além das não-linearidades geométricas. Também é objetivo deste trabalho, avaliar, quantificar e determinar a influência das diferenças geométricas características das vigas casteladas em relação às vigas maciças com as mesmas dimensões, analisando e descrevendo o comportamento estrutural destas vigas de aço para diversos comprimentos de vãos. A metodologia empregada para tal estudo baseou-se em uma análise paramétrica com o auxílio do método numérico dos elementos finitos.

Large three-photon absorption and intramolecular charge transfer of the bis-donor fluorene-based molecules

Three-photon absorption (3PA) of two fluorene-based molecules with D-pi-D structural motifs (abbreviated as BPAF and BCZF) has been determined by using a Q-switched Nd: YAG laser pumped with 38 ps pulses at 1064 nm in DMF. The measured 3PA cross-sections are 222 and 140 x 10(-78) cm(6) s(2) for BPAF and BCZF, respectively. AM1 calculations show that attaching different donors changes the charge density distribution of the fluorene skeleton, and it is observed that the 3PA cross-section can be enhanced with increasing intramolecular charge transfer character, measured by the parameter Delta p(1)/Delta p(2)/Delta p(1)'. (c) 2005 Elsevier B.V. All fights reserved.

Thiophene-fluorene derivatives with high three-photon absorption activities and their application to optical power limiting

The three-photon absorption (3PA) properties of two thiophene-fluorene derivatives (abbreviated as MOTFTBr and ATFTBr) have been determined by using a Q-switched Nd:YAG laser pumped wish 38ps pulses at 1064nm in DMF. The measured 3PA cross-sections are 152x10(-78)cm(6)s(2) and 139x10(-78)cm(6)s(2), respectively. The optimized structures were obtained by AM1 calculations and the results indicate that these two molecules show nonplanar structures, and attaching different donors has different effects on the molecular structure. The charge density distributions during the excitation were also systematically studied by using AM1 method. In addition, an obvious optical power limiting effect induced by 3PA has been demonstrated for both derivatives.

A new strategy of enhancing two-photon absorption in benzothiazole-containing fluorene molecules: Introduction of auxiliary donor-acceptor effects

A series of benzothiazole-containing fluorene molecules have been designed and their one- and two-photon absorption properties have been investigated theoretically by using the ZINDO method. The effects of electron-excessive/deficient heterocyclic bridges as auxiliary donors (auxD)/acceptors (auxA) on TPA cross-sections were studied. The results show that the molecules with D-pi-auxA-A, D-aux D-pi-A, or D-auxD-pi-auxA-A structure types have large TPA cross-section, which can be a valuable strategy in the design of two-photon absorption materials. Also, a linear relationship between the first hyperpolarizability and the TPA cross-section is observed. (c) 2006 Elsevier B.V. All rights reserved.

Simulações de problemas inversos com aplicações em engenharia nuclear usando técnicas de transporte de partículas neutras monoenergéticas na formulação unidimensional de ordenadas discretas

Neste trabalho, três técnicas para resolver numericamente problemas inversos de transporte de partículas neutras a uma velocidade para aplicações em engenharia nuclear são desenvolvidas. É fato conhecido que problemas diretos estacionários e monoenergéticos de transporte são caracterizados por estimar o fluxo de partículas como uma função-distribuição das variáveis independentes de espaço e de direção de movimento, quando os parâmetros materiais (seções de choque macroscópicas), a geometria, e o fluxo incidente nos contornos do domínio (condições de contorno), bem como a distribuição de fonte interior são conhecidos. Por outro lado, problemas inversos, neste trabalho, buscam estimativas para o fluxo incidente no contorno, ou a fonte interior, ou frações vazio em barras homogêneas. O modelo matemático usado tanto para os problemas diretos como para os problemas inversos é a equação de transporte independente do tempo, a uma velocidade, em geometria unidimensional e com o espalhamento linearmente anisotrópico na formulação de ordenadas discretas (SN). Nos problemas inversos de valor de contorno, dado o fluxo emergente em um extremo da barra, medido por um detector de nêutrons, por exemplo, buscamos uma estimativa precisa para o fluxo incidente no extremo oposto. Por outro lado, nos problemas inversos SN de fonte interior, buscamos uma estimativa precisa para a fonte armazenada no interior do domínio para fins de blindagem, sendo dado o fluxo emergente no contorno da barra. Além disso, nos problemas inversos SN de fração de vazio, dado o fluxo emergente em uma fronteira da barra devido ao fluxo incidente prescrito no extremo oposto, procuramos por uma estimativa precisa da fração de vazio no interior da barra, no contexto de ensaios não-destrutivos para aplicações na indústria. O código computacional desenvolvido neste trabalho apresenta o método espectronodal de malha grossa spectral Greens function (SGF) para os problemas diretos SN em geometria unidimensional para gerar soluções numéricas precisas para os três problemas inversos SN descritos acima. Para os problemas inversos SN de valor de contorno e de fonte interior, usamos a propriedade da proporcionalidade da fuga de partículas; ademais, para os problemas inversos SN de fração de vazio, oferecemos a técnica a qual nos referimos como o método físico da bissecção. Apresentamos resultados numéricos para ilustrar a precisão das três técnicas, conforme descrito nesta tese.

The prevalence of diabetes-related complications and multimorbidity in the population with type 2 diabetes mellitus in the Basque Country

Background: Type 2 diabetes mellitus is associated with a diverse range of pathologies. The aim of the study was to determine the incidence of diabetes-related complications, the prevalence of coexistent chronic conditions and to report multimorbidity in people with type 2 diabetes living in the Basque Country. Methods: Administrative databases, in four cross sections (annually from 2007 to 2011) were consulted to analyse 149,015 individual records from patients aged >= 35 years with type 2 diabetes mellitus. The data observed were: age, sex, diabetes-related complications (annual rates of acute myocardial infarction, major amputations and avoidable hospitalisations), diabetes-related pathologies (prevalence of ischaemic heart disease, renal failure, stroke, heart failure, peripheral neuropathy, foot ulcers and diabetic retinopathy) and other unrelated pathologies (44 diseases). Results: The annual incidence for each condition progressively decreased during the four-year period: acute myocardial infarction (0.47 to 0.40%), major amputations (0.10 to 0.08%), and avoidable hospitalisations (5.85 to 5.5%). The prevalence for diabetes-related chronic pathologies was: ischaemic heart disease (11.5%), renal failure (8.4%), stroke (7.0%), heart failure (4.3%), peripheral neuropathy (1.3%), foot ulcers (2.0%) and diabetic retinopathy (7.2%). The prevalence of multimorbidity was 90.4%. The highest prevalence for other chronic conditions was 73.7% for hypertension, 13.8% for dyspepsia and 12.7% for anxiety. Conclusions: In the type 2 diabetes mellitus population living in the Basque Country, incidence rates of diabetes complications are not as high as in other places. However, they present a high prevalence of diabetes related and unrelated diseases. Multimorbidity is very common in this group, and is a factor to be taken into account to ensure correct clinical management.

侧面泵浦的短矩形掺钕磷酸盐玻璃光纤激光器

利用光纤－波导耦合器技术侧面泵浦一根4厘米长的短光纤，我们研制得到了一个红外波长的光纤激光器。该激光器的增益介质是横截面为矩形的掺钕磷酸盐玻璃光纤，其纤芯横截面尺寸为1.5×0.5 毫米，数值孔径为0.2。单横模激光可以通过该矩形光纤的增益-导引效应来获得。最大的激光输出功率为1.05瓦，斜率效率为10％。

掺铒碲-钨-钠玻璃基质的光谱性质研究

制备了用于离子交换法制备光波导器件的掺铒碲-钨-钠玻璃基质。应用扎得-奥菲而特(Judd—Ofelt)理论计算了玻璃样品的三个强度参量，由强度参量计算了Er^3+离子的自发跃迁几率、荧光分支比等光谱参量；应用麦克库玻(McCumber)理论，计算了Er^3+离子在1．5μm的受激发射截面，荧光测试发现Er^3+离子的荧光半峰全宽可达65nm。比较了Er^3+离子在不同玻璃基质中的光谱特性。结果表明，Er^3+离子在碲-钨-钠玻璃中具有较高的受激发射截面和较宽的荧光半峰全宽，可以用于宽带光波导器件的制备。

Effect of alkaline-earth metal composition on spectroscopic properties of Er3+ in fluorophosphate glasses

Optical spectroscopic properties of Er3+-doped alkaline-earth metal modified fluoropho sphate glasses have been investigated experimentally for developing broadband fiber and planar amplifiers. The results show a strong correlation between the alkaline-earth metal content and the spectroscopic parameters such as absorption and emission cross sections, full widths at half-maximum and Judd-Ofelt intensity parameters. It is found that strontium ions could have more influences on the Judd-Ofelt intensity parameters and the absorption and emission cross sections than other alkaline-earth metal ions such as Mg2+, Ca2+, Ba2+. The sample containing 23 mol% strontium fluoride exhibits the maximum emission cross section of 7.58 x 10(-21) cm(2), the broadest full width at half-maximum of 65 nm and the longer lifetime of 8.6 ms among the alkaline-earth metal modified fluorophosphates glasses studied. The Judd-Ofelt intensity parameter Omega(6)s, the emission cross sections and the full widths at half-maximum in the Er3+-doped fluorophosphate glasses studied are larger than in the silicate and phosphate glasses.

掺铒碲酸盐玻璃的热力学稳定性和光谱性质的研究

分析了掺Er^3+碲酸盐玻璃的热力学稳定性能，研究了掺Er^3+碲酸盐玻璃的吸收和荧光光谱性质；应用Judd-Ofelt理论计算了碲酸盐玻璃中Er^3+离子的强度参数Ω(Ω2=4．79×10^-20cm^2,Ω4=1．52×10^-20cm^2，Ω6=0．66×10^-20cm^2)，计算了离子的自发跃迁几率，荧光分支比；应用McCumber理论计算了Er^3+的受激发射截面(σe=10．40×10^-21cm^2)、Er^3+离子^4I13／2→^4I15／2发射谱的荧光半高宽(FWHM=65．5nm)