有序Ga（0.5）In（0.5）P���致发光的研究

国家自然科学基金

MOCVD和GSMBE生长Ga（0.5）In（0.5）P 外延层中有序结构的研究

用MOCVD在(100)、GSMBE在(100)和(111)B GaAs上生长了GaInP���延层.PL测试表明,(100)衬底上GaIn PL 峰的能量比计算的带隙分别小43(GSMBE生长)和104meV(M(CVD生长).用Kurtz等人的模型对MOCVD和GSMBE生长的GaInP���有序度的不同进行了解释.并讨论了衬底晶向对GaInP���有序程度的影响.

自发有序Ga（0.5）In（0.5）P���金的静压光致发光研究

于2010-11-23批量导入

自发有序Ga（0.5）In（0.5）P���金的喇曼光谱研究

于2010-11-23批量导入

p���Si（1-x）Gex应变层中重掺杂禁带窄变的计算

于2010-11-23批量导入

[（CdSe）m（ZnSe）n]p-ZnSe多量子阱中的多声子散射

于2010-11-23批量导入

非对称耦合双阱P-I-N结构的光伏谱研究

于2010-11-23批量导入

1.5μmInGaAsP/InP P���衬底隐埋新月型（PBC）结构激光器

于2010-11-23批量导入

Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The player consists of nanometer-sized Si crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V-infinity=1.045 V and FF=70.3 %, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells arc discussed on the bases of the density-functional approach and the AMPS model.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.