An Efficient Distributed Scheme for Source Routing Protocol in Communication Networks

In this paper, we propose an efficient source routing algorithm for unicast flows, which addresses the scalability problem associated with the basic source routing technique. Simulation results indicate that the proposed algorithm indeed helps in reducing the message overhead considerably, and at the same time it gives comparable performance in terms of resource utilization across a wide range of workloads.

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.

Real source-sink pair

This work is concerned with the interaction of a source-sink pair. The main parameters of the problem are source and sink flow rates, the axial and lateral separations of the source and sink, and the angle between the axes of source and sink. Of concern is the percentage of source fluid that enters the sink as a function of these parameters. The experiments have been carried using the source nozzle diameter of 6 mm and the sink pipe diameter of two sizes: 10 mm and 20 mm. The Reynolds numbers of the source jet is about 3200. The main diagnostics are flow visualization using dye, laser induced fluorescence (LIF), particle streak photographs and particle image velocimetry (Ply). To obtain the removal effectiveness (that is percentage of source fluid that is going through the sink pipe), titration method is used. The sink diameter and the angle between source and the sink axes do not influence efficiencies as do the sink flow rate and the lateral separation. Data from experiments have been consolidated so that these results can be used for designing sinks for removal of heat and pollutants. (C) 2011 Elsevier Ltd. All rights reserved.

Removal of Nitrogen Oxides in Diesel Engine Exhaust by Plasma Assisted Molecular Sieves

This paper reports the studies conducted on removal of oxides of nitrogen (NOx) from diesel engine exhaust using electrical discharge plasma combined with adsorbing materials such as molecular sieves. This study is being reported for the first time. The exhaust is taken from a diesel engine of 6 kW under no load conditions. The characteristic behavior of a pulse energized dielectric barrier discharge reactor in the diesel exhaust treatment is reported. The NOx removal was not significant (36%) when the reactor without any packing was used. However, when the reactor was packed with molecular sieves (MS -3A, -4A & -13X), the NOx removal efficiency was increased to 78% particularly at a temperature of 200 °C. The studies were conducted at different temperatures and the results were discussed.

Catalyst-Packed Non-Thermal Plasma Reactor for Removal of Nitrogen Oxides

A single-stage plasma-catalytic reactor in which catalytic materials were packed was used to remove nitrogen oxides. The packing material was scoria being made of various metal oxides including Al2O3, MgO, TiO2, etc. Scoria was able to act not only as dielectric pellets but also as a catalyst in the presence of reducing agent such as ethylene and ammonia. Without plasma discharge, scoria did not work well as a catalyst in the temperature range of 100 °C to 200 °C, showing less than 10% of NOx removal efficiency. When plasma is produced inside the reactor, the NOx removal efficiency could be increased to 60% in this temperature range.

Hydrolysis of Ammonia Borane as a Hydrogen Source: Fundamental Issues and Potential Solutions Towards Implementation

In todays era of energy crisis and global warming, hydrogen has been projected as a sustainable alternative to depleting CO2-emitting fossil fuels. However, its deployment as an energy source is impeded by many issues, one of the most important being storage. Chemical hydrogen storage materials, in particular B?N compounds such as ammonia borane, with a potential storage capacity of 19.6 wt?% H2 and 0.145 kg?H?2?L-1, have been intensively studied from the standpoint of addressing the storage issues. Ammonia borane undergoes dehydrogenation through hydrolysis at room temperature in the presence of a catalyst, but its practical implementation is hindered by several problems affecting all of the chemical compounds in the reaction scheme, including ammonia borane, water, borate byproducts, and hydrogen. In this Minireview, we exhaustively survey the state of the art, discuss the fundamental problems, and, where applicable, propose solutions with the prospect of technological applications.

The Effects of Nitrogen Bonding on Hardness of AIN/CrN Multilayer Hard Coatings

AIN/CrN multilayer hard coatings with various bilayer thicknesses were fabricated by a reactive sputtering process. The microstructural and mechanical characterizations of multilayer coatings were investigated through transmission electron microscope (TEM) observations and the hardness measurements by nano indentation. In particular, the variation of chemical bonding states of the bilayer nitrides was elucidated by near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Many broken nitrogen bonds were formed by decreasing the bilayer thickness of AIN/CrN multilayer coatings. Existence of optimum AIN/CrN multilayer coatings thickness for maximum hardness could be explained by the competition of softening by the formation of broken nitrogen bonds and strengthening induced by decreasing bilayer thickness.

Hardness and Nitrogen Bonding Structure of A(x)Ti(1-x)N/CrN Multilayer Hard Coating

AlxTi1-xN/CrN multilayer coatings were fabricated by magnetron sputtering and those hardness variations were studied by observing the crack propagation and measuring the chemical bonding state of nitrides by Ti addition. While AlN/CrN multilayer shown stair-like crack propagation, AlxTi1-xN/CrN multilayer illustrated straight crack propagation. Most interestingly, Ti addition induced more broken nitrogen bonds in the nitride multilayers, leading to the reduction of hardness. However, the hardness of Al0.25Ti0.75N/CrN multilayer, having high Ti contents, increased by the formation of many Ti-N bond again instead of Al-N bond. From these results, we found that linear crack propagation behavior was dominated by broken nitrogen bonds in the AlxT1-xN/CrN multilayer coatings.

Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms

N-doped monoclinic Ga2O3 nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150 degrees C to 1350 degrees C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga2O3 nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga2O3 nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

Performance and variability trade-off with gate-to-source/drain overlap length

The impact of gate-to-source/drain overlap length on performance and variability of 65 nm CMOS is presented. The device and circuit variability is investigated as a function of three significant process parameters, namely gate length, gate oxide thickness, and halo dose. The comparison is made with three different values of gate-to-source/drain overlap length namely 5 nm, 0 nm, and -5 nm and at two different leakage currents of 10 nA and 100 nA. The Worst-Case-Analysis approach is used to study the inverter delay fluctuations at the process corners. The drive current of the device for device robustness and stage delay of an inverter for circuit robustness are taken as performance metrics. The design trade-off between performance and variability is demonstrated both at the device level and circuit level. It is shown that larger overlap length leads to better performance, while smaller overlap length results in better variability. Performance trades with variability as overlap length is varied. An optimal value of overlap length of 0 nm is recommended at 65 nm gate length, for a reasonable combination of performance and variability.