Metal mould reactions during casting of titanium in zircon sand moulds

Metal-mold reaction during Ti casting in zircon sand molds has been studied using scanning electron microscope, energy and wave length dispersive analysis of X-rays, X-ray diffraction, microhardness measurements, and chemical analysis. Experimental results suggest that oxides from the mold are not fully leached out by liquid Ti, but oxygen is preferentially transferred to liquid Ti, leaving behind metallic constituents in the mold as lower oxides or intermetallics of Ti. The electron microprobe analysis has revealed the depth profile of contaminants from the mold into the cast Ti metal. The elements Si, Zr and O were found to have diffused to a considerable distance within the Ti metals. A possible mechanism has now been evolved in regard to the reactions that occur during casting of Ti in zircon sand molds.

Solute-solute and solute-solvent interactions in transition metal alloys: Pt-Ti system

An isothermal section of the phase diagram for (silver + rhodium + oxygen) at T = 1173 K has been established by equilibration of samples representing twelve different compositions, and phase identification after quenching by optical and scanning electron microscopy (s.e.m.), X-ray diffraction (x.r.d.), and energy dispersive analysis of X-rays (e.d.x.), Only one ternary oxide, AgRhO2, was found to be stable and a three phase region involving Ag, AgRhO2 and Rh2O3 was identified. The thermodynamic properties of AgRhO2 were measured using a galvanic cell in the temperature range 980 K to 1320 K. Yttria-stabilized zirconia was used as the solid electrolyte and pure oxygen gas at a pressure of 0.1 MPa was used as the reference electrode. The Gibbs free energy of formation of the ternary oxide from the elements, ΔfGo (AgRhO2), can be represented by two linear equations that join at the melting temperature of silver. In the temperature range 980 K to 1235 K, ΔfGo(AgRhO2)/(J . mol-1) = -249080 + 179.08 T/K (±120). Above the melting temperature of silver, in the temperature range 1235 K to 1320 K, ΔfGo(AgRhO2)/(J . mol-1) = -260400 + 188.24 T/K (±95). The thermodynamic properties of AgRhO2 at T = 298.15 K were evaluated from the high temperature data. The chemical potential diagram for (silver + rhodium + oxygen) at T = 1200 K was also computed on the basis of the results of this study.

An eight-connected metal organic framework based on Cu(5) clusters: Synthesis, structure, magnetic and catalytic properties

A reaction of copper acetate, 5-nitroisophthalic acid in a water-methanol mixture under solvothermal condition results in a new metal-organic framework compound, [Cu(5)(mu(3)-OH)(2)(H(2)O)(6){(NO(2))-C(6)H(3)-(COO)(2)}(4)]center dot 5H(2)O, (1). The compound contains Cu5 pentameric cluster units connected by 5-nitro isophthalate (NIPA) moieties forming a CdCl(2)-like layer, which are further connected by another NIPA moiety forming the three-dimensional structure. The water molecules in (1) can be reversibly adsorbed. The removal of water accompanies a change in the colour as well as a structural re-organization. Magnetic studies suggest strong antiferromagnetie correlations between the Cu5 cluster units. The compound (1) exhibits heterogeneous Lewis acid catalysis for the cyanosilylation of imines with more than 95 % selectivity. Compound (1) has been characterized by IR, UV-vis, TGA, powder XRD studies.

Tuning of the metal-insulator transition in iodine incorporated amorphous carbon

We present the synthesis and properties of iodine incorporated amorphous carbon films. Optical studies depict a decrease in band gap with variation in iodine content and pyrolysis temperature. Tuning of the metal-insulator transition is achieved by varying the pyrolysis temperature and iodine concentration. Appreciable decrease in magnetoresistance is observed with iodine incorporation, but negative magnetoresistance typical behavior of metallic samples is not witnessed.

Evolution of 1/f α noise during electromigration stressing of metal film: Spectral signature of electromigration process

In this paper we report a systematic study of low-frequency 1/fα resistance fluctuation in a metal film at different stages of electromigration. The resistance fluctuation (noise) measurement was carried out in presence of a dc electromigration stressing current. We observe that in addition to the increase in the spectral power SV(f), the frequency dependence of the spectral power changes as the electromigration process progresses and the exponent α starts to change from 1 to higher value closer to 1.5. We interpret this change in α as arising due to an additional contribution to the spectral power with a 1/f3/2 component, which starts to contribute as the electromigration process progresses. This additional component SV(f) ∼ 1/f3/2 has been suggested to originate from long range diffusion that would accompany any electromigration process. The experimental observation finds support in a model simulation, where we also find that the enhancement of noise during electromigration stressing is accompanied by a change in spectral power frequency dependence.

Investigations on multimagnetron sputtered Zn1-xMgxO thin films through metal-ferroelectric-semiconductor configuration

The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties. Zn1−xMgxO (0<×<0.3) thin films were deposited on Si (100) and corning glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The Zn0.7Mg0.3O thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3–3.8 eV for x = 0–0.3. The average transmittance of the films was higher than 90% in the wavelength region λ = 400–900 nm.

Usefulness of in Situ Single Crystal to Single Crystal Transformation (SCSC) Studies in Understanding the Temperature-Dependent Dimensionality Cross-over and Structural Reorganization in Copper-Containing Metal-Organic Frameworks (MOFs)

Two copper-containing compounds [Cu(3)(mu(3)-OH)(2)-(H(2)O)(2){(SO(3))-C(6)H(3)-(COO)(2)}(CH(3)COO)] , I, and [Cu(5)(mu(3)-OH)(2)(H(2)O)(6){(NO(2))-C(6)H(3)-(COO)(2)}(4)]center dot 5H(2)O, II, were prepared using sulphoisophthalic and nitroisophthalic acids. The removal of the coordinated water molecules in the compounds was investigated using in situ single crystal to single crystal (SCSC) transformation studies, temperature-dependent powder X-ray diffraction (PXRD), and thermogravimetric analysis (TGA). The efficacy of SCSC transformation studies were established by the observation of dimensionality cross-over from a two-dimensional (I) to a three-dimensional structure, Cu(6)(mu(3)-OH)(4){(SO(3))-C(6)H(3)-(COO)(2)}(2)(CH(3)COO)(2), Ia, during the removal of the coordinated water molecules. Compound H exhibited a structural reorganization forming Cu(5)(mu(2)-OH)(2){(NO(2))C(6)H(3)-(COO)(2))(4)], Ha, possessing trimeric (Cu(3)O(12)) and dimeric (Cu(2)O(8)) copper clusters. The PXRD studies indicate that the three-dimensional structure (Ia) is transient and unstable, reverting back to the more stable two-dimensional structure (I) on cooling to room temperature. Compound Ha appears to be more stable at room temperature. The rehydration/dehydration studies using a modified TGA setup suggest complete rehydration of the water molecules, indicating that the water molecules in both compounds are labile. A possible model for the observed changes in the structures has been proposed. Magnetic studies indicate changes in the exchanges between the copper centers in Ha, whereas no such behavior was observed in Ia.

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Combined Raman and infrared investigation of the insulator-to-metal transition in NiS(2-x)Se(x) compounds

Ambient-condition Raman spectra were collected in the strongly correlated NiS(1-x)Se(x) pyrite (0 <= x <= 1.2). Two samples (x = 0 and x = 0.55) were studied as a function of pressure up to 10 GPa, and for the x = 0.55 sample the pressure dependence of the infrared reflectivity was also measured (0-10 GPa). This gave a complete picture of the optical response of that system on approaching the metallic state both by application of pressure and/or by Se alloying, which corresponds to a volume expansion. A peculiar nonmonotonic (V-shaped) volume dependence was found for the quasiparticle spectral weight of both pure and Se-doped compounds. In the x = 0.55 sample the vibrational frequencies of the chalcogen dimer show an anomalous volume dependence on entering the metallic phase. The abrupt softening observed, particularly significant for the Se-Se pair, indicates the relevant role of the softness of the Se-Se bond as previously suggested by theoretical calculations.

Designing copper-zirconium based nanowires for improving yield strength and plasticity by configuring surface atoms

Epitaxial-Bain-Path and Uniaxial-Bain-Path studies reveal that a B2-CuZr nanowire with Zr atoms on the surface is energetically more stable compared to a B2-CuZr nanowire with Cu atoms on the surface. Nanowires of cross-sectional dimensions in the range of similar to 20-50 are considered. Such stability is also correlated with the initial state of stress in the nanowires. It is also demonstrated here that a more stable structure, i.e., B2-CuZr nanowire with Zr atoms at surface shows improved yield strength compared to B2-CuZr nanowire with Cu atoms at surface site, over range of temperature under both the tensile and the compressive loadings. Nearly 18% increase in the average yield strength under tensile loading and nearly 26% increase in the averaged yield strength under compressive loading are observed for nanowires with various cross-sectional dimensions and temperatures. It is also observed that the B2-CuZr nanowire with Cu atom at the surface site shows a decrease in failure/plastic strain with an increase in temperature. On the other hand, B2-CuZr nanowires with Zr at the surface site shows an improvement in failure/plastic strain, specially at higher temperature as compared to the B2-CuZr nanowires which are having Cu atoms at the surface site. Finally, a possible design methodology for an energetically stable nano-structure with improved thermo-mechanical properties via manipulating the surface atom configuration is proposed.

Electronic structure of early transition metal oxides, Ca1−xSrxVO3 and La1−xCaxVO3: What can we learn from photoelectron spectroscopy

Photoemission spectroscopy offers the unique possibility of mapping out the electronic structure of the occupied electron states. However, the extreme surface sensitivity of this technique ensures that only the surface and the near-surface regions of any sample are probed. An important question arises in this context—Is the electronic structure of the surface region the same as that of the bulk? We address this issue using two different series of vanadium oxides, Ca1−xSrxVO3 and La1−xCaxVO3. Our results clearly establish that the electronic structure of the surface region is drastically different from that of the bulk in both these cases. We provide a method to separate the two contributions: one arising from the near-surface region and the other representative of the bulk. This separation allows us to deduce some very unusual behaviors of the electronic structures in these systems.

(Dimethylamino)borylene and Related Complexes of Electron-Rich Metal Fragments: Generation of Nucleophile-Resistant Cations by Spontaneous Halide Ejection

Spontaneous halide ejection from a three-coordinate Lewis acid has been shown to offer a remarkable new route to cationic metal complexes featuring a linear, multiply bonded boron-donor Ligand. The exploitation of electron-rich [CpM(PR3)(2)] fragments within boryl systems of the type LnMB(hal)NR2 leads to the spontaneous formation in polar solvents of chemically robust borylene complexes, [LnM(BNR2)](+), with exceptionally low electrophilicity and short M-B bonds. This is reflected by M-B distances (ca. 1.80 angstrom for FeB systems) which are more akin to alkyl-/aryl-substituted borylene complexes and, perhaps most strikingly, by the very low exothermicity associated with the binding of pyridine to the two-coordinate boron center (Delta H = -7.4 kcal mol(-1), cf. -40.7 kcal mol(-1) for BCl3). Despite the strong pi electron release from the metal fragment implied by this suppressed reactivity and by such short M-B bonds, the barrier to rotation about the Fe=B bond in the unsymmetrical variant [CpFe(dmpe)(BN{C6H4OMe-4}Me)](+) is found to be very small (ca. 2.9 kcal mol(-1)). This apparent contradiction is rationalized by the orthogonal orientations of the HOMO and HOMO-2 orbitals of the [CpML2](+) fragment, which mean that the M-B pi interaction does not fall to zero even in the highest energy conformation.