气泡/液滴运动的Level Set方法模拟研究

利用Level Set方法，结合投影法求解了描述气泡/液滴运动的Navier-Stokes方程。对地面常重力场中不同大小的空气泡在高黏度糖浆溶液中的自由上升运动现象，数值模拟结果与实验观测结果符合甚好，表明该方法能够计算大密度比和黏度比$(>1000:1)$情况下的气液两相流动。而对等密度液滴的热毛细迁移现象的数值模拟结果同样能够与实验结果相一致，表明该方法同样适于研究具有Marangoni效应的两相流动现象，特别是在空间微重力环境中的气液两相传热现象中的局部流动与传热问题。

Effects of Fracture Seepage on the Stability of Landslide during Reservoir Water Level Fluctuation

The hydraulic conductivity function of fractures is a key scientific question to describe and reveal the process and the role of water seepage reasonably. In this paper, the generation technology of random fracture network and the latest numerical computation method for equivalent permeability tensor of fracture network are applied to analyze the landslide located at Wangjiayuanzi in Wanzhou District of Chongqing by simulating the changes of the seepage field caused by the running of the Three Gorges Reservoir. The influences of the fracture seepage on the seepage field and stability of the landslide were discussed with emphasis. The results show that the fractures existing in the soil increase the permeability coefficient of the landslide body and reduce the delay time of the underground water level in the landslide which fluctuates relative to the water level of reservoir，that causes the safe coefficient of the slope changes more gently than that of the same slope without fractures. It means, if only water level fluctuating condition is concerned, the fractures existing in the soil plays a positive role to the stability of slopes.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.