Interplay between partial incoherence, partial inelasticity, resonance, and heterogeneity in long-range electron transfer and transport

A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

Scattering matrix approach to electronic dephasing in long-range electron transfer

Based on the Buttiker dephasing model, we propose an analytical scattering matrix approach to the long-range electron transfer phenomena. The present efficient scheme smoothly interpolates between the superexchange and the sequential hopping mechanisms. Various properties such as the drastic dephasing-assisted enhancement and turnover behaviors are demonstrated in good agreement with those obtained via the dynamical reduced density-matrix methods. These properties are further elucidated as results of the interplay among the dephasing strength, the tunneling parameter, and the bridge length of the electron transfer system. (C) 2001 American Institute of Physics.

The effect of buried AlxGa1-xN isolating layers on the transport properties of GaN deposited on sapphire substrate by molecular beam epitaxy using NH3

It is believed that the highly dislocated region near the GaN/sapphire interface is a degenerate layer. In this paper a direct evidence for such a proposal is presented. By inserting a buried AlxGa1-xN (x > 0.5) isolating layer to separate the interface region from the bulk region, the background electron concentration can be significantly reduced, while care must be taken to guarantee that there is no degrading of Hall mobility when choosing the thickness of the isolating layer. (C) 1998 Elsevier Science B.V. All rights reserved.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Electronic states of a two-dimensional electron system in a lateral superlattice and a perpendicular magnetic field

The electronic state of a two-dimensional electron system (2DES) in the presence of a perpendicular uniform magnetic field and a lateral superlattice (LS) is investigated theoretically. A comparative study is made between a LS induced by a spatial electrostatic potential modulation (referred to as a PMLS) and that induced by a spatial magnetic-field modulation (referred ro asa MMLS). By utilizing a finite-temperature self-consistent Hartree-Fock approximation scheme; the dependence of the electronic state on different system parameters (e.g., the modulation period, the modulation strength, the effective electron-electron interaction strength, the averaged electron density, and the system temperature) is studied in detail. The inclusion of exchange effect is found to bring qualitative changes to the electronic state of a PMLS, leading generally to a nonuniform spin splitting, and consequently the behavior of the electronic state becomes similar to that of a MMLS. The Landau-level coupling is taken into account, and is found to introduce some interesting features not observed before. It is also found that, even in the regime of intermediate modulation strength, the density dependence of the spin splitting of energy levels, either for a PMLS or a MMLS, can be qualitatively understood within the picture of a 2DES in a perpendicular magnetic field with the modulation viewed as a perturbation. [S0163-1829(97)02248-0].

In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate

Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas and a pair of surface ferromagnetic stripes on top, we have theoretically investigated the effect of in-plane stray field omitted frequently in previous studies on the spin-dependent ballistic transport properties in hybrid structure. It is demonstrated here that, in combination with an external-controllable electrostatic modulation, the concerned structure shows a similar function as a lateral spin-polarized resonant tunneling device, where the strong spin-filtering effect occurs and nearly single-mode polarization is anticipated for the proper modulation. More importantly, the spin polarity of transmission electron can be easily transferred from one extreme to the other by switching the magnetization of stripes, showing the promising application as an efficient spin aligner in the developing semiconductor spintronics.

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

T he total secondary electron emission yields, gamma(T), induced by impact of the fast ions Neq+ (q = 2-8) and Arq+ (q = 3-12) on Si and Neq+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, gamma(T) increases with the charge of projectile ion. By plotting gamma(T) as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Neq+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.

The electron emission yield induced by the interaction of highly charged argon ions with silicon surface

The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission, namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.

Color center formation in silica glass induced by high energy Fe and Xe ions

Silica glass samples were implanted with 1.157 GeV Fe-56 and 1.755 GeV Xe-136 ions to fluences range from 1 x 10(11) to 3.8 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet (UV) absorption from 3 to 6.4 eV and photoluminescence (PL) spectroscopy. The UV absorption investigation reveals the presence of various color centers (E' center, non-bridging oxygen hole center (NBOHC) and ODC(II)) appearing in the irradiated samples. It is found that the concentration of all color centers increase with the increase of fluence and tend to saturation at high fluence. Furthermore the concentration of E' center and that of NBOHC is approximately equal and both scale better with the energy deposition through processes of electronic stopping, indicating that E' center and NBOHC are mainly produced simultaneously from the scission of strained Si-O-Si bond by electronic excitation effects in heavy ion irradiated silica glass. The PL measurement shows three emissions peaked at about 4.28 eV (alpha band), 3.2 eV (beta band) and 2.67 eV (gamma band) when excited at 5 eV. The intensities of alpha and gamma bands increase with the increase of fluence and tend to saturation at high fluence. The intensity of beta band is at its maximum in virgin silica glass and it is reduced on increasing the ions fluence. It is further confirmed that nuclear energy loss processes determine the production of alpha and gamma bands and electronic energy loss processes determine the bleaching of beta band in heavy ion irradiated silica glass. (c) 2009 Elsevier B.V. All rights reserved.

Conducting probe atomic force microscopy investigation of anisotropic charge transport in solution cast PBD single crystals induced by an external field

2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxdiazole (PBD) is a good electron-transporting material and can form single crystals from solution. In this work, solution cast PBD single crystals with different crystallographic axes (b, c) perpendicular to the Au/S substrates in large area are achieved by controlling the rate of solvent evaporation in the presence and absence of external electrostatic field, respectively. The orientation of these single crystals on Au/S substrate was characterized by transmission electron microscopy (TEM) and atomic force microscopy (AFM). Conducting probe atomic force microscopy (CP-AFM) was used to measure the charge transport characteristics of PBD single crystals grown on Au/S substrates. Transport was measured perpendicular to the substrate between the CP-AFM tip and the Au/S substrate. The electron mobility of 3 x 10(-3) cm(2)/(V s) for PBD single crystal along crystallographic b-axis is determined. And the electron mobility of PBD single crystal along the c-axis is about 2 orders of magnitude higher than that along the b-axis due to the anisotropic charge transport at the low voltage region.

Degradation of polyimide induced by nitrogen laser irradiation

The degradation behavior of polyimide (PMDA-ODA) induced by nitrogen laser irradiation was studied. The changes in the surface morphology and the composition of the irradiated polyimide films were examined by scanning electron microscopy, X-ray photoelectron spectroscopy and FT-IR spectroscopy. The initial reaction was achieved by photochemical degradation of polyimide in the highly electronic excited state by the absorption of a second 337 nm photon. Atmospheric oxygen sequentially reacted with the produced radicals to form a highly oxidized layer. The formation of carbonyl group was enhanced by the heat remaining on the irradiated polyimide film surfaces. (C) 2000 Elsevier Science B.V. All rights reserved.

Characteristics of the conductive polyimide film surfaces induced by ultraviolet laser beam

A conducting layer with the conductivity of 1.2 Omega(-1)cm(-1) stripped in a solvent from KrF-laser-irradiated polyimide thin film is taken as a sample to determine the microstructure of the conducting layer. Fourier-transform infrared and X-ray photoelectron spectroscopies show the formation of the carbon-rich clusters after irradiation. The element analysis gives the atomic ratio of C:H:N:O for the carbon-rich cluster as 60:20:3:1. Wide-angle X-ray diffraction indicates that the conducting layer is mainly amorphous carbon with a small amount of the short-range ordered carbon-rich clusters. This study suggests a structural model with three-layer carbon sheets linked together in a random fashion for the short-range ordered carbon-rich clusters. The interplanar spacing is 3.87 Angstrom and the layer diameter 25 Angstrom. The transport model of variable-range hopping in three dimensions is used to explain the conducting behavior of the conducting layer. In our case, the short-range ordered carbon-rich clusters are assumed to be conducting islands dispersed in the amorphous carbon-rich cluster matrix.

High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

High current density induced damages such as electromigration in the on-chip interconnection /metallization of Al or Cu has been the subject of intense study over the last 40 years. Recently, because of the increasing trend of miniaturization of the electronic packaging that encloses the chip, electromigration as well as other high current density induced damages are becoming a growing concern for off-chip interconnection where low melting point solder joints are commonly used. Before long, a huge number of publications have been explored on the electromigration issue of solder joints. However, a wide spectrum of findings might confuse electronic companies/designers. Thus, a review of the high current induced damages in solder joints is timely right this moment. We have selected 6 major phenomena to review in this paper. They are (i) electromigration (mass transfer due electron bombardment), (ii) thermomigration (mass transfer due to thermal gradient), (iii) enhanced intermetallic compound growth, (iv) enhanced current crowding, (v) enhanced under bump metallisation dissolution and (vi) high Joule heating and (vii) solder melting. the damage mechanisms under high current stressing in the tiny solder joint, mentioned in the review article, are significant roadblocks to further miniaturization of electronics. Without through understanding of these failure mechanisms by experiments coupled with mathematical modeling work, further miniaturization in electronics will be jeopardized