Diagnostico situacional del sector de pequeños y medianos productores avícolas de huevos de mesa en Nicaragua

En Nicaragua, la producción de huevos experimentó un crecimiento anual del 8% al cierre del año 2012, se espera que para el año 2013 sea superado. La avicultura aporta 2.8% al PIB nacional y 30% al PIB agropecuario. El consumo per cápita de huevos es de 86. No existe en Nicaragua una clasificación oficial del sector avícola de huevos debido a que no ha sido creada por ninguna entidad gubernamental concerniente. Cada actor relacionado con el sector avícola posee una apreciación particular sobre la clasificación; el parámetro con mayor coincidencia es el número de aves en explotación. La avicultura se divide en dos sectores: ANAPA y el sector de pequeños y medianos avicultores de huevos; este último está representado por tres organizaciones: APEMEPAN, UNAPA y COOMPAS. La mayoría de los pequeños y medianos avicultores del país están concentrados en la región del Pacífico con un 88.06% del total de las granjas de los avicultores de huevos de mesa. La avicultura de pequeños y medianos productores de huevos carece de una cadena productiva integrada, la mayoría no cuentan con una planta procesadora de alimentos ni con canales de distribución propios, carecen de plantas incubadoras destinadas para aves ponedoras. Además, el sector de pequeños y medianos avicultores del país posee costos de producción altos, un nivel tecnológico bajo, acceso a capacitación y asistencia técnica escaso, acceso al financiamiento es considerado poco flexible por avicultores; además, afirman que no existen políticas de apoyo al sector; sin embargo en el desarrollo de este estudio se reveló la existencia de ciertas políticas y programas de apoyo principalmente en ministerios como MEFCCA, MIFIC y MAGFOR. Históricamente no ha existido exportación de huevos en Nicaragua y hubo importaciones sólo en el año 2011; actualmente los avicultores afirman la existencia de importaciones ilegales de huevos de procedencia hondureña.

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200°C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.

Electronic structure and surface properties of SrBi2Ta2O9 and related oxides

The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.

Electronic structure of the layered ferroelectric perovskite SrBi2Ta2O9

The band structure of the Bi layered perovskite SrBi2Ta2O9 (SBT) has been calculated by the tight binding method. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O block. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response of SBT while the ferroelectric response originates from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for the excellent fatigue properties of SBT.

Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.

3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400°C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

An approach to scenario analysis of the sustainability of an industrial sector applied to clothing and textiles in the UK

Companies aiming to be 'sustainability leaders' in their sector and governments wanting to support their ambitions need a means to assess the changes required to make a significant difference in the impact of their whole sector. Previous work on scenario analysis/scenario planning demonstrates extensive developments and applications, but as yet few attempts to integrate the 'triple bottom line' concerns of sustainability into scenario planning exercises. This paper, therefore, presents a methodology for scenario analysis of large change to an entire sector. The approach includes calculation of a 'triple bottom line graphic equaliser' to allow exploration and evaluation of the trade-offs between economic, environmental and social impacts. The methodology is applied to the UK's clothing and textiles sector, and results from the study of the sector are summarised. In reflecting on the specific study, some suggestions are made about future application of a similar methodology, including a template of candidate solutions that may lead to significant reduction in impacts. © 2007 Elsevier Ltd. All rights reserved.

Un estatuto especial para las microempresas trabajo-trabajo también reduciría la informalidad en el sector de la construcción

El sector de la construcción es un importante generador de oportunidades laborales, en particular para las personas con menor formación y que viven en condiciones de pobreza. A pesar de contar desde mucho tiempo atrás con un régimen laboral especial que pretende atender las particularidades de la actividad, en los hechos la elevada informalidad existente lleva a que el sistema de protección opere como un dispositivo de selección adversa que otorga cobertura a muy pocos trabajadores. La construcción se vería especialmente beneficiada con un Estatuto Especial para microempresas como el que se propusiera en el informe “Empleo y Desarrollo Social” Nro. 25 (abril de 2010)

Estudio de la composicion floristica y sanidad forestal de la arboleda del sector sur del campus principal de la Universidad Nacional Agraria, Managua

Con el objetivo de generar información sobre la composición florística y sobre los factores que inciden en la arboleda de la zona sur del campus principal de la Universidad Nacional Agraria, se realizó la presente investigación durante el periodo comprendido entre los meses de Agosto 2007 a Septiembre 2008. La técnica básica de toma de datos fue la inspección ocular directa del 100 % de los árboles existentes en la zona de estudio. Se pudo determinar que la arboleda del sector sur de la UNA esta constituida por un total de 761 árboles organizados en 39 especies y agrupados en 23 familias botánicas, siendo la familia mas representativa la Mimosáceas con un total de cinco especies, la especie de árbol mas abundante fue Azaridachta indica(árbol de Nim) con 271 individuos, lo que representa el 36,6 % de toda la arboleda. A nivel de la incidencia de factores bióticos sobre la arboleda se detectó la incidencia de una especie de planta parasita identificada como Struthanthus sp el cual es catalogado como un muérdago verdadero, esta planta se encontró parasitando 15 especies de árboles con una incidencia de 6 %, lo que significa 44 árboles infestados de toda la arboleda, el árbol con mayor numero de individuos afectados fue Terminalia catappa (almendro) con 9 de 20 individuos infestados. A nivel de microorganismos fue posible observas la incidencia de cuatro tipos de hongos asociados a Pestalotia sp, Colletotrichum sp, Cryphonectria cubensis y un tipo roya, así como la incidencia de bacterias fitopatógenas en cuatro especies de árboles. A nivel de insectos se encontraron 7 géneros pertenecientes a los órdenes: Coleóptera, Psocoptera, Homóptera, Thysanoptera, Isóptera e Hymenoptera, las especies lo mas relevantes fueron Nasutitermes sp y Atta cephalotes. También fue posible determinar la incidencia de dos especies de plantas epifitas Monstrera deliciosa e Hylocereus undatus(Pitahaya) y la ocurrencia de factores físicos de daño provocados por inscrustamientos de malla en tallos y podas inadecuadas. Los resultados encontrados en el estudio indican la urgencia de diseñar un plan de manejo silvicultural de la arboleda que contribuya a su mejor cuido y asegure su conservación