Effect of current density on the microstructure and corrosion properties of plasma electrolytic oxidation (PEO) coatings on AM50 Mg alloy produced in an electrolyte containing clay additives

Plasma electrolytic oxidation coatings were produced on AM50 Mg alloy in alkaline phosphate based electrolyte with montmorillonite clay additives employing current densities of 30, 60, and 120 mA/cm(2). The effect of current density on the microstructure and corrosion properties of the coating was investigated. The clay additives got melted and reactively incorporated into the coating forming an amorphous phase, at all the current densities. However, the coating was predominantly amorphous only at 30 mA/cm(2) and with increasing current density, increasing fractions of crystalline phases were formed. Higher current densities resulted in increased thickness of the coating, but reduced the compactness of the coatings. Electrochemical impedance spectroscopy tests in 0.5 wt.% (0.08 M) and 3.5 wt.% (0.6 M) NaCl solution revealed that the coatings processed at 30 mA/cm(2) exhibited a relatively better initial corrosion resistance owing to its relatively defect-free barrier layer and compactness of the coating. However, the presence of amorphous phases in significant amounts and lack of MgO in the coating resulted in increased rate of dissolution of the coatings and degradation of corrosion resistance. Coatings produced at higher current densities exhibited initial inferior corrosion resistance due to a more defective barrier layer and increased porosity in pore band and outer porous layer. However, the increased amount of crystalline phases and an increased amount of MgO, which resisted dissolution, counterbalanced the negative effects of defective barrier and increased porosity resulting in a relatively lower rate of the degradation of the corrosion resistance. Thus, the corrosion resistance of all the coatings continuously decreased with time and became similar after prolonged immersion in NaCl solution. Increasing current density, therefore, did not prove to be beneficial for the improvement of the corrosion performance of the PEO coatings. (C) 2016 Elsevier B.V. All rights reserved.

Nickel Electrode for Improving Current Density in Organic Electronic Device

In this work, polymer diode performance was analyzed by using nickel as anode electrode from two kinds of nickel as starting materials, namely nickel wire Ni{B} and nickel nano-particle Ni{N}. Metal electrode surface roughness and grain morphology were investigated by atomic force microscope and scanning electron microscope, respectively. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured for the fabricated device at room temperature. Obtained result from the current-voltage characteristics shows an increment in the current density for nickel nano-particle top electrode device. The increase in the current density could be due to a reduction in built-in voltage at P3HT/Ni{N} interface.

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.

DESIGN REQUIREMENTS FOR DIRECT SUPERCRITICAL CARBON DIOXIDE RECEIVER DEVELOPMENT AND TESTING

This paper establishes the design requirements for the development and testing of direct supercritical carbon dioxide (sCO2) solar receivers. Current design considerations are based on the ASME Boiler and Pressure Vessel Code (BPVC). Section I (BPVC) considers typical boilers/superheaters (i.e. fired pressure vessels) which work under a constant low heat flux. Section VIII (BPVC) considers pressure vessels with operating pressures above 15 psig 2 bar] (i.e. unfired pressure vessels). Section III, Division I - Subsection NH (BPVC) considers a more detailed stress calculation, compared to Section I and Section VIII, and requires a creep-fatigue analysis. The main drawback from using the BPVC exclusively is the large safety requirements developed for nuclear power applications. As a result, a new set of requirements is needed to perform detailed thermal-structural analyses of solar thermal receivers subjected to a spatially-varying, high-intensity heat flux. The last design requirements document of this kind was an interim Sandia report developed in 1979 (SAND79-8183), but it only addresses some of the technical challenges in early-stage steam and molten-salt solar receivers but not the use of sCO2 receivers. This paper presents a combination of the ASME BPVC and ASME B31.1 Code modified appropriately to achieve the reliability requirements in sCO(2) solar power systems. There are five main categories in this requirements document: Operation and Safety, Materials and Manufacturing, Instrumentation, Maintenance and Environmental, and General requirements. This paper also includes the modeling guidelines and input parameters required in computational fluid dynamics and structural analyses utilizing ANSYS Fluent, ANSYS Mechanical, and nCode Design Life. The main purpose of this document is to serve as a reference and guideline for design and testing requirements, as well as to address the technical challenges and provide initial parameters for the computational models that will be employed for the development of sCO(2) receivers.

Study on current-random wave forces acting on a framework

The forces of random wave plus current acting on a simplified offshore platform (jacket) model have been studied numerically and experimentally. The numerical results are in good agreement with experiments. The mean force can be approximated as a function of equivalent velocity parameter and the root-mean-square force as a function of equivalent significant wave height parameter.

Infrared Magnitude-Redshift Relations for Luminous Radio Galaxies

Infrared magnitude-redshift relations for the 3CR and 6C samples of radio galaxies are presented for a wide range of plausible cosmological models, including those with non-zero cosmological constant OmegaLambda. Variations in the galaxy formation redshift, metallicity and star formation history are also considered. The results of the modelling are displayed in terms of magnitude differences between the models and no-evolution tracks, illustrating the amount of K-band evolution necessary to account for the observational data. Given a number of plausible assumptions, the results of these analyses suggest that: (i) cosmologies which predict T_0xH_0>1 (where T_0 denotes the current age of the universe) can be excluded; (ii) the star formation redshift should lie in the redshift interval 5