Cycling of nutrients and silicon in pigeonpea and pearl millet monoculture and intercropping

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of argon ion bombardment on amorphous silicon carbonitride films

Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.

Minimum Evaporation Model of Dermatological Delivery Systems. Lamellar Liquid Crystal Formulations Containing Brazilian Nut (Bertholletia excelsa HBK) Vegetable Oil and Guarana Glycolic Extract

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Spherical, cylindrical and tetrahedral symmetries; hydrogenic states at high magnetic field in Si:P

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural bases for a complete myotoxic mechanism: Crystal structures of two non-catalytic phospholipases A(2)-like from Bothrops brazili venom

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An automatic method for segmentation of fission tracks in epidote crystal photomicrographs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of magnetic field enhanced plasma immersion ion implantation in Silicon

A comparison between experimental measurements and numerical calculations of the ion current distribution in plasma immersion ion implantation (PIII) with external magnetic field is presented. Later, Silicon samples were implanted with nitrogen ion to analyze the effect on them. The magnetic field considered is essentially non-uniform and is generated by two magnetic coils installed on vacuum chamber. The presence of both, electric and magnetic field in PIII create a crossed ExB field system, promoting drift velocity of the plasma around the target. The results found shows that magnetized electrons drifting in ExB field provide electron-neutral collision. The efficient ionization increases the plasma density around the target where a magnetic confinement is formed. As result, the ion current density increases, promoting significant changes in the samples surface properties, especially in the surface wettability.

Bonding of facial silicon with nanoparticles to an acrylic resin substrate

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Amorphous silicon carbonitride films modified by plasma immersion ion implantation

Amorphous silicon carbonitride (a-SiCN:H) films were deposited from hexamethyldisilazane (HMDSN) organic compounds via radio-frequency (RF) glow discharges. Afterwards the films were bombarded, from 15 to 60 min, with nitrogen ions using Plasma Immersion Ion Implantation (PIII) technique. X-ray photoelectron spectroscopy (XPS) showed that O-containing groups increased, while C-C and/or C-H groups decreased with treatment time. This result indicates chemical alterations of the polymeric films with the introduction of polar groups on the surface, which changes the surface wettability. In fact, the hydrophobic nature of a-SiCN:H films (contact angle of 100 degrees) was changed by nitrogen ion implantation and, and after aging in atmosphere air, all samples preserved the hydrophilic character (contact angle <80 degrees) independently of treatment time. The exposure of the films to oxygen plasma was performed to evaluate the etching rate, which dropped from 24% to 6% while the implantation time increased from 15 to 60 min. This data suggests that Pill increased the film structure strength, probably due to crosslinking enhancement of polymeric chains. Therefore, the treatment with nitrogen ions via Pill process was effective to modify the wettability and oxidation resistance of a-SiCN:H films. (C) 2014 Elsevier Ltd. All rights reserved.

Protonation Pattern, Tautomerism, Conformerism, and Physicochemical Analysis in New Crystal Forms of the Antibiotic Doxycycline

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

One-dimensional silicon and germanium nanostructures with no carbon analogues

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Elucidating the crystal structure of the antimalarial drug (+/-)-mefloquine hydrochloride: a tetragonal hydrated species

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

SILICON IN ROW AND NITROGEN IN TOPDRESSING FERTILIZATION ON RICE UNDER DRY LAND AND SPRINKLER IRRIGATION CONDITIONS

The objective of this work was to evaluate the effects of silicon application adjusted with nitrogen fertilization via top-dressing on grain productivity, the silicon contents of the soil, in the plant tissue and nitrogen contents in dry and irrigated conditions. The experimental outlining was from designed blocks with subdivided parcels and four repetitions. The treatments consisted of culture system (dry and irrigated) and the under parcels by the combination of silicon (0 and 100 kg ha(-1)), in magnesium and calcium silicate form (with 23% of SiO2), and four doses of N (urea) via top-dressing (0, 30, 60 and 90 kg ha(-1)). Silicon application at sowing furrow was a viable technique because it provided significant increase in the content of this element in the root growth of rice. The application of silicon in the sowing furrow did not change the content of the element nor the nitrogen nutrition in rice plants. The nitrogen application reduced the silicon content and increased nitrogen nutrition in rice plants. Silicon application at sowing furrow provided no increase in rice grain yield. When there was no water limitation to nitrogen fertilization enhanced linearly on rice grain yield, whereas under water stress the effect of nitrogen fertilization was limited.

Oxidation of ethanol and its derivatives on well defined pt single crystal electrodes vicinal to pt(111): a comparative study

The oxidation of ethanol (EtOH) at Pt(111) electrodes is dominated by the 4e path leading to acetic acid. The inclusion of surface defects such as those present on stepped surfaces leads to an increase of the reactivity towards the most desirable 12e path leading to CO2 as final product. This path is also favored when the methyl group is more oxidized, as in the case of ethylene glycol (EG) that spontaneously decomposes to CO on Pt(111) electrodes, thus showing a more effective breaking of the C-C bond. Some trends in reactivity can be envisaged when other derivative molecules are compared at well-ordered electrodes. This strategy was used in the past, but the improvement in the electrode pretreatment and the overall information available on the subject suggest that relevant information is still missing.