The design and synthesis of redox core-alpha amino acid composites based on thiol-disulfide exchange mechanism and a comparative study of their zinc abstraction potential from [CCXX] boxes in proteins

The design and synthesis of agents that can abstract zinc from their [CCXX] (C=cysteine; X=cysteine/histidine) boxes by thioldisulfide exchange-having as control, the redox parities of the core sulfur ligands of the reagent and the enzyme, has been illustrated, and their efficiency demonstrated by monitoring the inhibition of the transcription of calf thymus DNA by E. coli RNA polymerase, which harbors two zinc atoms in their [CCXX] boxes of which one is exchangeable. Maximum inhibition possible with removal of the exchangeable zinc was seen with redox-sulfanilamide-glutamate composite. In sharp contrast, normal chelating agents (EDTA, phenanthroline) even in a thousand fold excess showed only marginal inhibition, thus supporting an exchange mechanism for the metal removal. (C) 2002 Elsevier Science Ltd. All rights reserved.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

A novel space cloth using resistor grid network for radar absorbers in stealth applications

We report novel resistor grid network based space cloth for application in single and multi layer radar absorbers. The space cloth is analyzed and relations are derived for the sheet resistance in terms of the resistor in the grid network. Design curves are drawn using MATLAB and the space cloth is analyzed using HFSS™ software in a Salisbury screen for S, C and X bands. Next, prediction and simulation results for a three layer Jaumann absorber using square grid resistor network with a Radar Cross Section Reduction (RCSR) of -15 dB over C, X and Ku bands is reported. The simulation results are encouraging and have led to the fabrication of prototype broadband radar absorber and experimental work is under progress.

Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

Small strong epsilon nets

Let P be a set of n points in R-d. A point x is said to be a centerpoint of P if x is contained in every convex object that contains more than dn/d+1 points of P. We call a point x a strong centerpoint for a family of objects C if x is an element of P is contained in every object C is an element of C that contains more than a constant fraction of points of P. A strong centerpoint does not exist even for halfspaces in R-2. We prove that a strong centerpoint exists for axis-parallel boxes in Rd and give exact bounds. We then extend this to small strong epsilon-nets in the plane. Let epsilon(S)(i) represent the smallest real number in 0, 1] such that there exists an epsilon(S)(i)-net of size i with respect to S. We prove upper and lower bounds for epsilon(S)(i) where S is the family of axis-parallel rectangles, halfspaces and disks. (C) 2014 Elsevier B.V. All rights reserved.

Effect of High-Pressure Torsion on Texture, Microstructure, and Raman Spectroscopy: Case Study of Fe- and Te-Substituted CoSb3

Fe0.05Co0.95Sb2.875Te0.125, a double-element-substituted skutterudite, was prepared by induction melting, annealing, and hot pressing (HP). The hot-pressed sample was subjected to high-pressure torsion (HPT) with 4 GPa pressure at 673 K. X-ray diffraction was performed before and after HPT processing of the sample; the skutterudite phase was observed as a main phase, but an additional impurity phase (CoSb2) was observed in the HPT-processed sample. Surface morphology was determined by high-resolution scanning electron microscopy. In the HP sample, coarse grains with sizes in the range of approximately 100 nm to 300 nm were obtained. They changed to fine grains with a reduction in grain size to 75 nm to 125 nm after HPT due to severe plastic deformation. Crystallographic texture, as measured by x-ray diffraction, indicated strengthening of (112), (102) poles and weakening of the (123) pole of the HPT-processed sample. Raman-active vibrational modes showed a peak position shift towards the lower energy side, indicating softening of the modes after HPT. The distortion of the rectangular Sb-Sb rings leads to broadening of Sb-Sb vibrational modes due to local strain fluctuation. In the HPT process, a significant effect on the shorter Sb-Sb bond was observed as compared with the longer Sb-Sb bond.

Porous lithium rich Li1.2Mn0.54Ni0.22Fe0.04O2 prepared by microemulsion route as a high capacity and high rate capability positive electrode material

A porous layered composite of Li2MnO3 and LiMn0.35Ni0.55Fe0.1O2 (composition:Li1.2Mn0.54Ni0.22Fe0.04O2) is prepared by inverse microemulsion method and studied as a positive electrode material. The precursor is heated at several temperatures between 500 and 900 degrees C. The X-ray diffraction, scanning electron microscopy, and transmission electron microscopy studies suggested that well crystalline submicronsized particles are obtained. The product samples possess mesoporosity with broadly distributed pores around 10 similar to 50 nm diameter. Pore volume and surface area decrease by increasing the temperature of preparation. However, the electrochemical activity of the composite samples increases with an increase in temperature. The discharge capacity values of the samples prepared at 900 degrees C are about 186 mAh g(-1) at a specific current of 25 mA g(-1) with an excellent cycling stability. The composite sample also possesses high rate capability. The high rate capability is attributed to the porous nature of the material. (C) 2014 Elsevier Ltd. All rights reserved.

Polynomial Decompositions in Polynomial Time

Fix a prime p. Given a positive integer k, a vector of positive integers Delta = (Delta(1), Delta(2), ... , Delta(k)) and a function Gamma : F-p(k) -> F-p, we say that a function P : F-p(n) -> F-p is (k, Delta, Gamma)-structured if there exist polynomials P-1, P-2, ..., P-k : F-p(n) -> F-p with each deg(P-i) <= Delta(i) such that for all x is an element of F-p(n), P(x) = Gamma(P-1(x), P-2(x), ..., P-k(x)). For instance, an n-variate polynomial over the field Fp of total degree d factors nontrivially exactly when it is (2, (d - 1, d - 1), prod)- structured where prod(a, b) = a . b. We show that if p > d, then for any fixed k, Delta, Gamma, we can decide whether a given polynomial P(x(1), x(2), ..., x(n)) of degree d is (k, Delta, Gamma)-structured and if so, find a witnessing decomposition. The algorithm takes poly(n) time. Our approach is based on higher-order Fourier analysis.

Structural evolution and second harmonic properties of lithium niobate-tantalate nanocrystals embedded in a borate glass

Nano-crystals of LiNbxTa1 (-) O-x(3) were evolved by subjecting melt-quenched 1.5Li(2)O-2B(2)O(3)-xNb(2)O(5)-(1 - x)Ta2O5 glasses (where x = 0, 0.25, 0.5, 0.75 and 1.00) to a controlled 3-h isothermal heat treatment between 530 and 560 degrees C. Detailed X-ray diffraction and Raman spectral studies confirmed the formation of nano-crystalline LiNbxTa1 (-) O-x(3) along with a minor phase of ferroelectric and non-linear optic Li2B4O7. The sizes of the nanocrystals evolved in the glass were in the range of 19-37 nm for x = 0-0.75 and 23-45 nm for x = 1.00. Electron microscopic studies confirmed a transformation of the morphology of the nano-crystallites from dendritic star-shaped spherulites for x = 0 to rod-shaped structures for x = 1.00 brought about by a coalescence of crystallites. Broad Maker-fringe patterns (recorded at 532 nm) were obtained by subjecting the heat-treated glass plates to 1064 nm fundamental radiation. However, an effective second order non-linear optic coefficient, d(eff), of 0.45 pm/V, which is nearly 1.2 times the d(36) of KDP single crystal, was obtained for a 560 degrees C/3 h heat-treated glass of the representative composition x = 0.50 comprising 37 nm sized crystallites. (C) 2015 Elsevier B.V. All rights reserved.

Structural evolution and second harmonic properties of lithium niobate-tantalate nanocrystals embedded in a borate glass

Nano-crystals of LiNbxTa1 (-) O-x(3) were evolved by subjecting melt-quenched 1.5Li(2)O-2B(2)O(3)-xNb(2)O(5)-(1 - x)Ta2O5 glasses (where x = 0, 0.25, 0.5, 0.75 and 1.00) to a controlled 3-h isothermal heat treatment between 530 and 560 degrees C. Detailed X-ray diffraction and Raman spectral studies confirmed the formation of nano-crystalline LiNbxTa1 (-) O-x(3) along with a minor phase of ferroelectric and non-linear optic Li2B4O7. The sizes of the nanocrystals evolved in the glass were in the range of 19-37 nm for x = 0-0.75 and 23-45 nm for x = 1.00. Electron microscopic studies confirmed a transformation of the morphology of the nano-crystallites from dendritic star-shaped spherulites for x = 0 to rod-shaped structures for x = 1.00 brought about by a coalescence of crystallites. Broad Maker-fringe patterns (recorded at 532 nm) were obtained by subjecting the heat-treated glass plates to 1064 nm fundamental radiation. However, an effective second order non-linear optic coefficient, d(eff), of 0.45 pm/V, which is nearly 1.2 times the d(36) of KDP single crystal, was obtained for a 560 degrees C/3 h heat-treated glass of the representative composition x = 0.50 comprising 37 nm sized crystallites. (C) 2015 Elsevier B.V. All rights reserved.

Increasing Critical Sensitivity of the Load/Unload Response Ratio before Large Earthquakes with Identified Stress Acclumulation Pattern

The Load/Unload Response Ratio (LURR) method is proposed for short-to-intermediate-term earthquake prediction [Yin, X.C., Chen, X.Z., Song, Z.P., Yin, C., 1995. A New Approach to Earthquake Prediction — The Load/Unload Response Ratio (LURR) Theory, Pure Appl. Geophys., 145, 701–715]. This method is based on measuring the ratio between Benioff strains released during the time periods of loading and unloading, corresponding to the Coulomb Failure Stress change induced by Earth tides on optimally oriented faults. According to the method, the LURR time series usually climb to an anomalously high peak prior to occurrence of a large earthquake. Previous studies have indicated that the size of critical seismogenic region selected for LURR measurements has great influence on the evaluation of LURR. In this study, we replace the circular region usually adopted in LURR practice with an area within which the tectonic stress change would mostly affect the Coulomb stress on a potential seismogenic fault of a future event. The Coulomb stress change before a hypothetical earthquake is calculated based on a simple back-slip dislocation model of the event. This new algorithm, by combining the LURR method with our choice of identified area with increased Coulomb stress, is devised to improve the sensitivity of LURR to measure criticality of stress accumulation before a large earthquake. Retrospective tests of this algorithm on four large earthquakes occurred in California over the last two decades show remarkable enhancement of the LURR precursory anomalies. For some strong events of lesser magnitudes occurred in the same neighborhoods and during the same time periods, significant anomalies are found if circular areas are used, and are not found if increased Coulomb stress areas are used for LURR data selection. The unique feature of this algorithm may provide stronger constraints on forecasts of the size and location of future large events.

Colliding-pulse modelocked quantum dot lasers

Colliding pulse modelocking is demonstrated for the first time in quantum dot lasers. Using 3.9 mm-long devices with a 245 pm-long central absorber, 7 ps pulses at a repetition rate of 20 GHz is obtained. For Gaussian pulses a time-bandwidth product close to the Fourier transform limit is determined. These results confirm the potential of quantum dot lasers for high repetition rate harmonic modelocking.