Moderate speed impact damage to 2D-braided glass-carbon composites

Hybrid glass-carbon 2D braided composites with varying carbon contents are impacted using a gas gun by impactors of masses 12.5 and 44.5. g, at impact energies up to 50. J. The damage area detected by ultrasound C-scan is found to increase roughly linearly with impact energy, and is larger for the lighter impactor at the same impact energy. The area of whitening of the glass tows on the distal side corresponds with the measured C-scan damage area. X-ray imaging shows more intense damage, at the same impact energy, for a higher-mass impactor. Braids with more glass content have a modest increase in density, decrease in modulus, and reduction in the C-scan area and dent depth at the impact site, particularly at the higher impact energies. Impact damage is found to reduce significantly the compressive strength, giving up to a 26% reduction at the maximum impact energy. © 2012 Elsevier Ltd.

Finite horizon LQR control with limited controller-system communication

We consider finite-horizon LQR control with limited controller-system communication. Within a time-horizon T , the controller can only communicate with the system d

Deceptive female oviposition behaviour elicits male ejaculation in the European bitterling

In European bitterling Rhodeus amarus, fish that lay their eggs in the gill chambers of living freshwater mussels, females perform conspicuous behaviours associated with spawning that increases the probability of males performing ejaculatory behaviour and participating in a spawning. A significant positive association was detected between behaviour in which a female performs a spawning action but without releasing eggs, here termed 'deceptive female oviposition', and ejaculatory behaviour by courting males.

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD

We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

一种计算和分析二维光子晶体缺陷模式的方法

通过改进时域有限差分(FDTD)法,计算和分析了二维光子晶体的缺陷模式。运用一维时域有限差分算法和线性插值法在总场散射场(TF-SF)连接边界引入入射平面波,采用完全匹配层(PML)技术对外行波进行了有效吸收。计算和分析结果表明,在光子晶体非对称方向入射的平面波能激发所有的缺陷模式,选取合适的探测点位置收集电场值,经快速傅里叶变换(FFT)能得到所有的共振峰值。另外,采用该方法研究了二维正方介质柱光子晶体缺陷模的共振频率与缺陷介质柱半径和介电常量之间的关系。结果表明通过改变缺陷的半径和介电常量大小可以在光子晶体禁带中一定的范围内调节缺陷模式的共振频率大小。