Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Ba-doping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (Eg) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

COMPARAÇÃO ENTRE FUNCIONAIS DE DENSIDADE NO ESTUDO DE PROPRIEDADES ELETRÔNICAS DE DERIVADOS DA ARTEMISININA

The present paper demonstrates the application of functional GGA hybrids, with long-range corrections, for the calculation of the electronic properties of artemisinin and two of its derivatives - artemether e artesunate. Due to the relatively large amount of data obtained, the statistical method of Principal Component Analysis was employed. The functionals of the WB97 family are observed to be the most appropriate for the determining of reactivity indexes, which are the principal descriptors that, probably, are associated with the antimalarial and anticancer properties of this group of molecules. In addition, it was also observed that all the functionals obtained satisfactorily describe the geometric properties of the studied.

Estudo da série iso-eletrônica do átomo de hélio pelo método hiperesférico

Neste trabalho estudamos o espectro da série iso-eletrônica do átomo de hélio utilizando o método hiperesférico adiabático. Este método permite o estudo dos níveis de energia de sistemas atômicos por meio de um conjunto de curvas de potencial, de forma semelhante à aproximação de Born-Oppenheimer para sistemas moleculares. As curvas de potencial são definidas com relação a uma única variável radial, independentemente do número de elétrons do sistema. Desta forma a análise e classificação dos níveis de energia é realizada de forma simples e intuitiva, o que não se observa em métodos como o variacional e Hartree-Fock. O objetivo desta pesquisa é o de descrever o comportamento do estado fundamental de sistemas heliônicos com a variação da carga nuclear. Além do método hiperesférico simplificar muito a análise dos resultados, é um processo ab-initio, cujos erros são limitados apenas pelos truncamentos do número de equações acopladas. Já na sua aproximação mais simples, onde todos os acoplamentos radiais são desprezados, o erro obtido para a energia do estado fundamental é inferior a 1% e com a introdução do acoplamento diagonal o erro cai para cerca de 0.3%. Resultados de grande precisão são obtidos com os acoplamentos não diagonais, atingindo precisões da ordem de 10-3 %.

Evaluation of group electronegativities and hardness (softness) of group 14 elements and containing functional groups through density functional theory and correlation with NMR spectra data

Quantum Chemical calculations for group 14 elements of Periodic Table (C, Si, Ge, Sn, Pb) and their functional groups have been carried out using Density Functional Theory (DFT) based reactivity descriptors such as group electronegativities, hardness and softness. DFT calculations were performed for a large series of tetracoordinated Sn compounds of the CH3SnRR'X type, where X is a halogen and R and R' are alkyl, halogenated alkyl, alkoxy, or alkyl thio groups. The results were interpreted in terms of calculated electronegativity and hardness of the SnRR'X groups, applying a methodology previously developed by Geerlings and coworkers (J. Phys. Chem. 1993, 97, 1826). These calculations allowed to see the regularities concerning the influence of the nature of organic groups RR' and inorganic group X on electronegativities and hardness of the SnRR'X groups; in this case, it was found a very good correlation between the electronegativity of the fragment and experimental 119Sn chemical shifts, a property that sensitively reflects the change in the valence electronic structure of molecules. This work was complemented with the study of some compounds of the EX and ER types, where E= C, Si, Ge, Sn and R= CH3, H, which was performed to study the influence that the central atom has on the electronegativity and hardness of molecules, or whether these properties are mainly affected for the type of ligand bound to the central atom. All these calculations were performed using the B3PW91 functional together with the 6-311++G** basis set level for H, C, Si, Ge, F, Cl and Br atoms and the 3-21G for Sn and I atoms.

First principles modeling of metallic alloys and alloy surfaces

By alloying metals with other materials, one can modify the metal’s characteristics or compose an alloy which has certain desired characteristics that no pure metal has. The field is vast and complex, and phenomena that govern the behaviour of alloys are numerous. Theories cannot penetrate such complexity, and the scope of experiments is also limited. This is why the relatively new field of ab initio computational methods has much to give to this field. With these methods, one can extend the understanding given by theories, predict how some systems might behave, and be able to obtain information that is not there to see in physical experiments. This thesis pursues to contribute to the collective knowledge of this field in the light of two cases. The first part examines the oxidation of Ag/Cu, namely, the adsorption dynamics and oxygen induced segregation of the surface. Our results demonstrate that the presence of Ag on the Cu(100) surface layer strongly inhibits dissociative adsorption. Our results also confirmed that surface reconstruction does happen, as experiments predicted. Our studies indicate that 0.25 ML of oxygen is enough for Ag to diffuse towards the bulk, under the copper oxide layer. The other part elucidates the complex interplay of various energy and entropy contributions to the phase stability of paramagnetic duplex steel alloys. We were able to produce a phase stability map from first principles, and it agrees with experiments rather well. Our results also show that entropy contributions play a very important role on defining the phase stability. This is, to the author’s knowledge, the first ab initio study upon this subject.

Análise conformacional de compostos de Biginelli com atividade antineoplásica

Diidropirimidinonas são heterociclos com atividade antineoplásica conhecida. O monastrol e alguns análogos são exemplos. A análise conformacional representa uma etapa preliminar importante em estudos que visam correlacionar a estrutura do composto com sua atividade. Neste trabalho, descrevemos a análise conformacional do monastrol e diversos análogos por cálculo semi-empírico AM1 e ab initio HF/6-31G*. Quatro geometrias de equilíbrio foram encontradas (s-cis/ap, s-cis/sp, s-trans/ap e s-trans/sp), tendo como rotações internas importantes a do sistema carbonilado α,β-insaturado e a do grupo arila ligado ao heterociclo.

Atomic level phenomena on transition metal surfaces

In this study we discuss the atomic level phenomena on transition metal surfaces. Transition metals are widely used as catalysts in industry. Therefore, reactions occuring on transition metal surfaces have large industrial intrest. This study addresses problems in very small size and time scales, which is an important part in the overall understanding of these phenomena. The publications of this study can be roughly divided into two categories: The adsorption of an O2 molecule to a surface, and surface structures of preadsorbed atoms. These two categories complement each other, because in the realistic case there are always some preadsorbed atoms at the catalytically active surfaces. However, all transition metals have an active d-band, and this study is also a study of the in uence of the active d-band on other atoms. At the rst part of this study we discuss the adsorption and dissociation of an O2 molecule on a clean stepped palladium surface and a smooth palladium surface precovered with sulphur and oxygen atoms. We show how the reactivity of the surface against the oxygen molecule varies due to the geometry of the surface and preadsorbed atoms. We also show how the molecular orbitals of the oxygen molecule evolve when it approaches the di erent sites on the surface. In the second part we discuss the surface structures of transition metal surfaces. We study the structures that are intresting on account of the Rashba e ect and charge density waves. We also study the adsorption of suphur on a gold surface, and surface structures of it. In this study we use ab-initio based density functional theory methods to simulate the results. We also compare the results of our methods to the results obtained with the Low-Energy-Electron-Difraction method.

The role of van der Waals interactions in the case of H2 adsorption on ruthenium (0001) surface

Computational material science with the Density Functional Theory (DFT) has recently gained a method for describing, for the first time the non local bonding i.e., van der Waals (vdW) bonding. The newly proposed van der Waals-Density Functional (vdW-DF) is employed here to address the role of non local interactions in the case of H2 adsorption on Ru(0001) surface. The later vdW-DF2 implementation with the DFT code VASP (Vienna Ab-initio Simulation Package) is used in this study. The motivation for studying H2 adsorption on ruthenium surface arose from the interest to hydrogenation processes. Potential energy surface (PES) plots are created for adsorption sites top, bridge, fcc and hcp, employing the vdW-DF2 functional. The vdW-DF yields 0.1 eV - 0.2 eV higher barriers for the dissociation of the H2 molecule; the vdW-DF seems to bind the H2 molecule more tightly together. Furthermore, at the top site, which is found to be the most reactive, the vdW functional suggests no entrance barrier or in any case smaller than 0.05 eV, whereas the corresponding calculation without the vdW-DF does. Ruthenium and H2 are found to have the opposite behaviors with the vdW-DF; Ru lattice constants are overestimated while H2 bond length is shorter. Also evaluation of the CPU time demand of the vdW-DF2 is done from the PES data. From top to fcc sites the vdW-DF computational time demand is larger by 4.77 % to 20.09 %, while at the hcp site it is slightly smaller. Also the behavior of a few exchange correlation functionals is investigated along addressing the role of vdW-DF. Behavior of the different functionals is not consistent between the Ru lattice constants and H2 bond lengths. It is thus difficult to determine the quality of a particular exchange correlation functional by comparing equilibrium separations of the different elements. By comparing PESs it would be computationally highly consuming.

Research and development of III-V semiconductor surfaces for improved device interfaces

This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

Traités divers de saint Thomas et de Gilles de Rome.

Contient : I Fol. 1-28. " Expositio Boetii de Trinitate secundum fratrem T[homam]. Ab initio nativitatis mee investigabo et ponam in lucem scienciam illius. Sap. VII. Naturalis mentis humane intuitus pondere corruptibilis corporis... " ; II Fol. 29-44. Divers traités philosophiques, dont plusieurs sont probablement de saint Thomas, savoir : ; 1° Traité dont le commencement manque et dont les premiers mots conservés sont : " Quorum substantie vel nature differentes, horum et operationes differentes et quorum substantia est eadem... " ; 2° " [De generatione.] Eorum que generantur alia generantur in sublimi, alia in ymo. Ea que generantur in sublimi tria habent loca... " ; 3° " [De speculis.] Queritur de forma resultante in speculo que... lumen vel color videtur esse, queritur primo utrum sit vel non... " ; 4° " [De essentia.] Necesse est considerare primo quid essentia, quid substancia... " ; 5° ; 6° ; 7° ; III

The infared optical properties of Sr2RuO4 and SmTiO3 including an object-oriented resistivity interface /

The perovskite crystal structure is host to many different materials from insulating to superconducting providing a diverse range of intrinsic character and complexity. A better fundamental description of these materials in terms of their electronic, optical and magnetic properties undoubtedly precedes an effective realization of their application potential. SmTiOa, a distorted perovskite has a strongly localized electronic structure and undergoes an antiferromagnetic transition at 50 K in its nominally stoichiometric form. Sr2Ru04 is a layered perovskite superconductor (ie. Tc % 1 K) bearing the same structure as the high-tem|>erature superconductor La2_xSrrCu04. Polarized reflectance measurements were carried out on both of these materials revealing several interesting features in the far-infrared range of the spectrum. In the case of SmTiOa, although insulating, evidence indicates the presence of a finite background optical conductivity. As the temperature is lowered through the ordering temperature a resonance feature appears to narrow and strengthen near 120 cm~^ A nearby phonon mode appears to also couple to this magnetic transition as revealed by a growing asymmetry in the optica] conductivity. Experiments on a doped sample with a greater itinerant character and lower Neel temperature = 40 K also indicate the presence of this strongly temperature dependent mode even at twice the ordering temperature. Although the mode appears to be sensitive to the magnetic transition it is unclear whether a magnon assignment is appropriate. At very least, evidence suggests an interesting interaction between magnetic and electronic excitations. Although Sr2Ru04 is highly anisotropic it is metallic in three-dimensions at low temperatures and reveals its coherent transport in an inter-plane Drude-like component to the highest temperatures measured (ie. 90 K). An extended Drude analysis is used to probe the frequency dependent scattering character revealing a peak in both the mass enhancement and scattering rate near 80 cm~* and 100 cm~* respectively. All of these experimental observations appear relatively consistent with a Fermi-liquid picture of charge transport. To supplement the optical measurements a resistivity station was set up with an event driven object oriented user interface. The program controls a Keithley Current Source, HP Nano-Voltmeter and Switching Unit as well as a LakeShore Temperature Controller in order to obtain a plot of the Resistivity as a function of temperature. The system allows for resistivity measurements ranging from 4 K to 290 K using an external probe or between 0.4 K to 295 K using a Helium - 3 Cryostat. Several materials of known resistivity have confirmed the system to be robust and capable of measuring metallic samples distinguishing features of several fiQ-cm.

Interaction between vortices and impurities in a d-wave superconductor /

High temperature superconductors were discovered in 1986, but despite considerable research efforts, both experimental and theoretical, these materials remain poorly understood. Because their electronic structure is both inhomogeneous and highly correlated, a full understanding will require knowledge of quasiparticle properties both in real space and momentum space. In this thesis, we will present a theoretical analysis of the scanning tunneling microscopy (STM) data in BSCCO. We introduce the Bogoliubov-De Gennes Hamiltonian and solve it numerically on a two-dimensional 20 x 20 lattice under a magnetic field perpendicular to the surface. We consider a vortex at the center of our model. We introduce a Zn impurity in our lattice as a microscopic probe of the physical properties of BSCCO. By direct numerical diagonalization of the lattice BogoliubovDe Gennes Hamiltonian for different positions of the impurity, we can calculate the interaction between the vortex and the impurity in a d-wave superconductor.

Études spectroscopiques expérimentales et théoriques de complexes de métaux de transition

Cette thèse présente une série d'études qui visent la compréhension de la structure électronique de complexes de métaux de transition en employant diverses méthodes de spectroscopie. L'information sur la structure électronique aide à comprendre et développer des nouveaux matériaux, des nouvelles voies de synthèses, ainsi que des nouveaux modèles théoriques. Habituellement, afin d'explorer la structure électronique d'un système qui comporte en son centre un métal de transition, l'information fournie par les spectres d'un seul composé n'est pas suffisante. On étudie une série de composés similaires, qui ont le même métal de transition à un degré d'oxydation donné, ainsi que des ligands qui forment des liaisons de différentes forces et caractéristiques avec le métal. Cependant, ces changements, bien qu'on les désire de faible impact, créent une grande perturbation de la structure électronique visée par les études. Afin d'étudier en profondeur une seule structure électronique, nous employons une stratégie d'analyse moins perturbante. Nous appliquons une pression hydrostatique sur les complexes de métaux de transition. Cette pression perturbe le système suffisamment pour nous livrer davantage d'informations sur la structure électronique, sans la « dénaturer ». Afin d'étudier précisément ces systèmes perturbés, la technique d'application de pression est conjuguée, dans la littérature, aux diverses techniques de spectroscopie d'absorption UV-visible, de luminescence, ainsi que de diffusion Raman. Pour extraire un maximum d'informations de ces expériences, on emploie des techniques de calculs de structure électronique ainsi que de dynamique des noyaux. Dans cette thèse, on tente de mettre en lumière la structure électronique de composés de molybdène(IV), de platine(II) et palladium(II) à l'aide de la technique de pression couplée aux spectroscopies de luminescence et de diffusion Raman. Dans le chapitre 3, on observe un déplacement de la bande de luminescence de +12 cm-1/kbar entre la pression ambiante et 25 kbar pour le complexe trans-[MoOCl(CN-t-Bu)4]BPh4, dont le centre métallique molybdène(IV)est de configuration électronique 4d2. Il s'agit de la première variation positive observée pour un complexe de type métal-oxo. À des pressions plus élevées, la tendance s'inverse. Le maximum d'énergie de la bande de luminescence se déplace de -8 cm-1/kbar. Ce changement de variation présage d'une compétition interne entre les ligands situés sur les différents axes de l'octaèdre. À l'aide de calculs basés sur la théorie de la fonctionnelle de la densité, on propose un mécanisme pour expliquer ce phénomène. Au cours du chapitre 4, on étudie des complexes de palladium(II) et de platine(II) qui ont les mêmes ligands. Un de ces ligands est le 1,4,7-trithiacyclononane (ttcn). On constate qu'à basse pression le ligand est bidentate. Par contre, lorsque la pression augmente, on constate, par exemple à l'aide du complexe [Pt(ttcn)Cl2], qu'une interaction anti-liante supplémentaire se produit entre le ligand ttcn et le métal, ce qui change la nature de l'orbitale HOMO. On observe un déplacement de la bande de luminescence de -19 cm-1/kbar. Tel que pour le complexe de molybdène(IV), le déplacement de la bande de luminescence dépend de la compétition entre les ligands situés sur les différents axes de l'octaèdre. L'interaction liante entre l'ion platine(II) et l'atome de soufre axial est l'effet le plus plausible qui peut induire un déplacement de la bande de luminescence vers les basses énergies. Ceci nous indique que cette interaction domine. Par contre, pour ce qui est du complexe palladium(II), la compétition est remportée par d'autres effets, car le déplacement de la bande de luminescence est de +6 cm-1/kbar. Encore une fois, des calculs, basés sur la théorie de la fonctionnelle de la densité, aident à explorer les causes de ces observations en suggérant des explications corroborées simultanément par les diverses expériences de spectroscopie. Lors du chapitre 5, une étude plus exacte de la structure électronique ainsi que de la dynamique des noyaux de complexes de métaux de transition est présentée. En effet, les complexes de palladium(II) et de platine(II), de type [M(X)4]2-, ont une structure simple, très symétrique. Le premier état excité de ces molécules subit la distorsion Jahn-Teller. On veut établir un protocole de travail pour les expérimentateurs afin d'analyser des spectres de molécules pour lesquelles l'approximation de Born-Oppenheimer n'est pas valide. On utilise la théorie de la fonctionnelle de la densité dépendante du temps ainsi que le modèle de Heidelberg afin de décrire des effets non adiabatique. On tente d'établir l'influence des effets non adiabatiques sur les spectres de ce type de complexe.

Étude DFT+U des phases structurales du La2CuO4

Ce mémoire traite des propriétés du La2CuO4 dopé en trous, le premier supraconducteur à haute température critique ayant été découvert. Les différentes phases électroniques du cristal y seront présentées, ainsi que le diagramme de phases en dopage de ce matériau. Les trois structures dans lesquelles on peut retrouver ce cristal seront décrites en détail, et leurs liens présumés avec les phases électroniques seront présentés. Il s’en suivra une étude utilisant la théorie de la fonctionnelle de la densité combinée au modèle de Hubbard (DFT+U) des différentes phases structurales, en plus des phases antiferromagnétiques et paramagnétiques. L’effet de la corrélation électronique sur la structure cristalline sera également étudié par l’intermédiaire du paramètre de Hubbard. Le but sera de vérifier si la DFT+U reproduit bien le diagramme de phases expérimentales, et sous quelles conditions. Une étude des effets de l’inclinaison des octaèdres d’oxygène sur la structure électronique sera également présentée.

Analyse des propriétés électroniques de supraconducteurs à l’aide de la théorie de la fonctionnelle de la densité

Cette thèse traite de la structure électronique de supraconducteurs telle que déterminée par la théorie de la fonctionnelle de la densité. Une brève explication de cette théorie est faite dans l’introduction. Le modèle de Hubbard est présenté pour pallier à des problèmes de cette théorie face à certains matériaux, dont les cuprates. L’union de deux théories donne la DFT+U, une méthode permettant de bien représenter certains systèmes ayant des électrons fortement corrélés. Par la suite, un article traitant du couplage électron- phonon dans le supraconducteur NbC1−xNx est présenté. Les résultats illustrent bien le rôle de la surface de Fermi dans le mécanisme d’appariement électronique menant à la supraconductivité. Grâce à ces résultats, un modèle est développé qui permet d’expliquer comment la température de transition critique est influencée par le changement des fré- quences de vibration du cristal. Ensuite, des résultats de calcul d’oscillations quantiques obtenus par une analyse approfondie de surfaces de Fermi, permettant une comparaison directe avec des données expérimentales, sont présentés dans deux articles. Le premier traite d’un matériau dans la famille des pnictures de fer, le LaFe2P2. L’absence de su- praconductivité dans ce matériau s’explique par la différence entre sa surface de Fermi obtenue et celle du supraconducteur BaFe2As2. Le second article traite du matériau à fermions lourds, le YbCoIn5. Pour ce faire, une nouvelle méthode efficace de calcul des fréquences de Haas-van Alphen est développée. Finalement, un dernier article traitant du cuprate supraconducteur à haute température critique YBa2Cu3O6.5 est présenté. À l’aide de la DFT+U, le rôle de plusieurs ordres magnétiques sur la surface de Fermi est étudié. Ces résultats permettent de mieux comprendre les mesures d’oscillations quan- tiques mesurées dans ce matériau.