Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

The investigation on dynamic fracture behavour of materials under compressive-shear combined stress waves

In this paper, an improved plate impact experimental technique is presented for studying dynamic fracture mechanism of materials, under the conditions that the impacting loading is provided by a single pulse and the loading time is in the sub-microsecond range. The impacting tests are carried out on the pressure-shear gas gun. The loading rate achieved is dK/dt similar to 10(8) MPa m(1/2) s(-1). With the elimination of influence of the specimen boundary, the plane strain state of a semi-infinite crack in an infinite elastic plate is used to simulate the deformation fields of crack tip. The single pulses are obtained by using the "momentum trap" technique. Therefore, the one-time actions of the single pulse are achieved by eradicating the stress waves reflected from the specimen boundary or diffracted from the crack surfaces. In the current study, some important phenomena have been observed. The special loading of the single pulse can bring about material damage around crack tip, and affect the material behavior, such as kinking and branching of the crack propagation. Failure mode transitions from mode I to mode II crack are observed under asymmetrical impact conditions. The mechanisms of the dynamic crack propagation are consistent with the damage failure model.

Stress state in front of a crack perpendicular to bimaterial interface

Using a dislocation simulation approach, the basic equation for a crack perpendicular to a bimaterial interface is formulated in this paper. A novel expansion method is proposed for solving the problem. The complete solution for the problem, including the T stress ahead of the crack tip and the stress intensity factors are presented. The stress field characteristics are analyzed in detail. It is found that ahead of the crack tip and near the interface the normal stress, perpendicular to the crack plane, sigma(x), is characterized by the K fields and the normal stress sigma(y) is dominated by the K field plus T stress in the region of 0 < r/b < 0.4 for b/a(0) less than or equal to 0.1, where b is the distance from the crack tip to the interface.

Surface Stress Induced By Adatoms Adsorption On Solid Surfaces

Based on the statistical thermodynamics theory, a theoretical model of adsorbate induced surface stress of adatoms adsorption on solid surface is presented. For the low coverage, the interaction between the adsorbed molecules is entirely negligible and the adsorption induced surface stress is found to be the function of the coverage and the adsorption energy change with strain. For the high coverage, the adsorbate-adsorbate interaction contributes to the adsorption-induced surface stress effectively. In the case of carbon adsorption on the Ni(100) surface, the value of 0.5 is obtained as a characteristic coverage to decide whether to take the interaction between the adsorabtes into consideration and the results also show that the adsorption induces a compressive surface stress.

Residual Stress And Deformation Analysis Of Anodic Bonded Multi-Layer Of Glass And Aluminum

The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 degrees C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

Derivation Of A Nonlinear Reynolds Stress Model Using Renormalization Group Analysis And Two-Scale Expansion Technique

Adopting Yoshizawa's two-scale expansion technique, the fluctuating field is expanded around the isotropic field. The renormalization group method is applied for calculating the covariance of the fluctuating field at the lower order expansion. A nonlinear Reynolds stress model is derived and the turbulent constants inside are evaluated analytically. Compared with the two-scale direct interaction approximation analysis for turbulent shear flows proposed by Yoshizawa, the calculation is much more simple. The analytical model presented here is close to the Speziale model, which is widely applied in the numerical simulations for the complex turbulent flows.

Interface Layer Effect On The Stress Distribution Of A Wafer-Bonded Bilayer Structure

The interface layer plays an important role in stress transfer in composite structures. However, many interface layer properties such as the modulus, thickness, and uniformity are difficult to determine. The model developed in this article links the influence of the interface layer on the normal stress distribution along the layer thickness with the layer surface morphology before bonding. By doing so, a new method of determining the interfacial parameter(s) is suggested. The effects of the layer thickness and the surface roughness before bonding on the normal stress distribution and its depth profile are also discussed. For ideal interface case with no interfacial shear stress, the normal stress distribution pattern can only be monotonically decreased from the interface. Due to the presence of interfacial shear stress, the normal stress distribution is much more complex, and varies dramatically with changes in the properties of the interface layer, or the dimensions of the bonding layers. The consequence of this dramatic stress field change, such as the shift of the maximum stress from the interface is also addressed. The size-dependent stress distribution in the thickness direction due to the interface layer effect is presented. When the interfacial shear stress is reduced to zero, the model presented in this article is also demonstrated to have the same normal stress distribution as obtained by the previous model, which does not consider the interface layer effect.

Stress intensity factor histories of a steadily propagating crack under 3-D combined mode traction

Elastodynamic stress intensity factor histories of an unbounded solid containing a semi-infinite plane crack that propagates at a constant velocity under 3-D time-independent combined mode loading are considered. The fundamental solution, which is the response of point loading, is obtained. Then, stress intensity factor histories of a general loading system are written out in terms of superposition integrals. The methods used here are the Laplace transform methods in conjunction with the Wiener-Hopf technique.

A second-order dynamic subgrid-scale stress model

A second-order dynamic model based on the general relation between the subgrid-scale stress and the velocity gradient tensors was proposed. A priori test of the second-order model was made using moderate resolution direct numerical simulation date at high Reynolds number ( Taylor microscale Reynolds number R-lambda = 102 similar to 216) for homogeneous, isotropic forced flow, decaying flow, and homogeneous rotating flow. Numerical testing shows that the second-order dynamic model significantly improves the correlation coefficient when compared to the first-order dynamic models.

Influence of threshold stress on the estimation of the Weibull statistics

The influence of threshold stress on the estimation of the Weibull statistics is discussed in terms of the Akaike information criterion. Numerical simulations show that, if sample data are limited in number and threshold stress is not too large, the two-parameter Weibull distribution is still a preferred choice. For example, the fit of strength data of glass and ceramics to the two- and three-parameter Weibull distributions is compared.

Electrothermal stress in conductive body with collinear cracks

The temperature and stress field in a thin plate with collinear cracks interrupting an electric current field are determined. This is accomplished by using a complex function method that allows a direct means of finding the distribution of the electric current, the temperature and stress field. Temperature dependency for the heat-transfer coefficient, coefficient of linear expansion and the elastic modulus are considered. As an example, temperature distribution is calculated for an alloy (No. GH2132) plate with two collinear cracks under high temperature. Relationships between the stress, temperature, electric density and crack length are obtained. Crack trajectories emanating from existing crack are predicted by application of the strain energy density criterion which can also be used for finding the load carrying capacity of the cracked plate. (C) 2003 Elsevier Ltd. All rights reserved.

Semi-weight function method on computation of stress intensity factors in dissimilar materials

Semi-weight function method is developed to solve the plane problem of two bonded dissimilar materials containing a crack along the bond. From equilibrium equation, stress and strain relationship, conditions of continuity across interface and free crack surface, the stress and displacement fields were obtained. The eigenvalue of these fields is lambda. Semi-weight functions were obtained as virtual displacement and stress fields with eigenvalue-lambda. Integral expression of fracture parameters, K-I and K-II, were obtained from reciprocal work theorem with semi-weight functions and approximate displacement and stress values on any integral path around crack tip. The calculation results of applications show that the semi-weight function method is a simple, convenient and high precision calculation method.

Singularity of dynamic stress fields around an interface crack between viscoelastic bodies

The singular nature of the dynamic stress fields around an interface crack located between two dissimilar isotropic linearly viscoelastic bodies is studied. A harmonic load is imposed on the surfaces of the interface crack. The dynamic stress fields around the crack are obtained by solving a set of simultaneous singular integral equations in terms of the normal and tangent crack dislocation densities. The singularity of the dynamic stress fields near the crack tips is embodied in the fundamental solutions of the singular integral equations. The investigation of the fundamental solutions indicates that the singularity and oscillation indices of the stress fields are both dependent upon the material constants and the frequency of the harmonic load. This observation is different from the well-known -1/2 oscillating singularity for elastic bi-materials. The explanation for the differences between viscoelastic and elastic bi-materials can be given by the additional viscosity mismatch in the case of viscoelastic bi-materials. As an example, the standard linear solid model of a viscoelastic material is used. The effects of the frequency and the material constants (short-term modulus, long-term modulus and relaxation time) on the singularity and the oscillation indices are studied numerically.

Coupling effects of heterogeneity and stress fluctuation on rupture

The coupling of mesoscopic strength distribution and stress fluctuation on damage evolution and rupture are examined. The numerical simulations show that there is only weak stress fluctuation at the initial damage stage when the mean field approximation is in effect. As the damage fraction becomes larger than the threshold value, the fluctuation is amplified significantly, and damage localization appears. The coupling between stress fluctuation, disordered heterogeneity and the damage localization may play an essential role in catastrophic rupture. (C) 2003 Elsevier Ltd. All rights reserved.

Computation of stress intensity factors by the sub-region mixed finite element method of lines

Based on the sub-region generalized variational principle, a sub-region mixed version of the newly-developed semi-analytical 'finite element method of lines' (FEMOL) is proposed in this paper for accurate and efficient computation of stress intensity factors (SIFs) of two-dimensional notches/cracks. The circular regions surrounding notch/crack tips are taken as the complementary energy region in which a number of leading terms of singular solutions for stresses are used, with the sought SIFs being among the unknown coefficients. The rest of the arbitrary domain is taken as the potential energy region in which FEMOL is applied to obtain approximate displacements. A mixed system of ordinary differential equations (ODEs) and algebraic equations is derived via the sub-region generalized variational principle. A singularity removal technique that eliminates the stress parameters from the mixed equation system eventually yields a standard FEMOL ODE system, the solution of which is no longer singular and is simply and efficiently obtained using a standard general-purpose ODE solver. A number of numerical examples, including bi-material notches/cracks in anti-plane and plane elasticity, are given to show the generally excellent performance of the proposed method.