A controller for a miniature intra-aortic ventricular assist device.

Two control algorithms have been developed for a minimally invasive axial-flow ventricular assist device (VAD) for placement in the descending aorta. The purpose of the device is to offload the left ventricle and to augment lower body perfusion in patients with moderate congestive heart failure. The VAD consists of an intra-aortic impeller with a built-in permanent magnet rotor and an extra-aortic stator. The control algorithms, which use pressure readings upstream and downstream of the VAD to determine the pump status, have been tested in a mock circulatory system under two conditions, namely with or without afterload sensitivity. The results give an insight into controller design for an intra-aortic blood pump working in series with the heart.

Design method of an innovative motor for an intra-aortic ventricular assist device

A permanent-magnet motor has been designed for an innovative axial-flow ventricular assist device (VAD), to be placed in the descending aorta, intended to offload the left ventricle and augment renal perfusion in patients with congestive heart failure (CHF). For this application, an intra-aortic impeller with a built-in permanent magnet rotor is driven by an extraaortic stator working in synchronism with the natural heart. To meet this need, a two-dimensional analytical model has been developed in the MATLAB environment to estimate machine parameters; finite element analysis (FEA) has been used to refine the results. A prototype blood pump equipped with an innovative motor designed from the procedure above has been tested in a mock loop representing the human circulatory system. The performance of VAD incorporating the motor is presented. © 2009 IEEE.

CHANGES IN PREDICTED MOS DEVICE CHARACTERISTICS DUE TO THE USE OF TWO DIMENSIONAL SOURCE/DRAIN PROFILES.

Two-dimensional MOS device simulation programs such as MINIMOS left bracket 1 right bracket are limited in their validity due to assumptions made in defining the initial two-dimensional source/drain profiles. The two options available to define source/drain regions both construct a two-dimensional profile from one-dimensional profiles normal to the surface. Inaccuracies in forming these source/drain profiles can be expected to effect predicted device characteristics as channel dimensions of the device are reduced. This paper examines these changes by interfacing numerically similated two dimensional source/drain profiles to MINIMOS and comparing predicted I//D-V//D characteristics with 2-D interfacing, 2-D profiles constructed from interfaced 1-D profiles and MINIMOS self generated profiles. Data obtained for simulations of 3 mu m N and P channel devices are presented.

A microfluidic device for high density hydrodynamic cell trapping, growth and super-resolution imaging

Super-Resolution imaging techniques such as Fluorescent Photo-Activation Localisation Microscopy (FPALM) have created a powerful new toolkit for investigating living cells, however a simple platform for growing, trapping, holding and controlling the cells is needed before the approach can become truly widespread. We present a microfluidic device formed in polydimethylsiloxane (PDMS) with a fluidic design which traps cells in a high-density array of wells and holds them very still throughout the life cycle, using hydrodynamic forces only. The device meets or exceeds all the necessary criteria for FPALM imaging of Schizosaccharomyces pombe and is designed to remain flexible, robust and easy to use. © 2011 IEEE.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Cortical thickness mapping to identify focal osteoporosis in patients with hip fracture.

BACKGROUND: Individuals with osteoporosis are predisposed to hip fracture during trips, stumbles or falls, but half of all hip fractures occur in those without generalised osteoporosis. By analysing ordinary clinical CT scans using a novel cortical thickness mapping technique, we discovered patches of markedly thinner bone at fracture-prone regions in the femurs of women with acute hip fracture compared with controls. METHODS: We analysed CT scans from 75 female volunteers with acute fracture and 75 age- and sex-matched controls. We classified the fracture location as femoral neck or trochanteric before creating bone thickness maps of the outer 'cortical' shell of the intact contra-lateral hip. After registration of each bone to an average femur shape and statistical parametric mapping, we were able to visualise and quantify statistically significant foci of thinner cortical bone associated with each fracture type, assuming good symmetry of bone structure between the intact and fractured hip. The technique allowed us to pinpoint systematic differences and display the results on a 3D average femur shape model. FINDINGS: The cortex was generally thinner in femoral neck fracture cases than controls. More striking were several discrete patches of statistically significant thinner bone of up to 30%, which coincided with common sites of fracture initiation (femoral neck or trochanteric). INTERPRETATION: Femoral neck fracture patients had a thumbnail-sized patch of focal osteoporosis at the upper head-neck junction. This region coincided with a weak part of the femur, prone to both spontaneous 'tensile' fractures of the femoral neck, and as a site of crack initiation when falling sideways. Current hip fracture prevention strategies are based on case finding: they involve clinical risk factor estimation to determine the need for single-plane bone density measurement within a standard region of interest (ROI) of the femoral neck. The precise sites of focal osteoporosis that we have identified are overlooked by current 2D bone densitometry methods.

Fracture toughness of fibrous membranes

Random fibrous networks exist in both natural biological and engineering materials. While the nonlinear deformation of fibrous networks has been extensively studied, the understanding of their fracture behaviour is still incomplete. To study the fracture toughness of fibrous materials, the near-tip region is crucial because failure mechanisms such as fibril rupture occur in this region. The consideration of this region in fracture studies is, however, a difficult task because it involves microscopic mechanical responses at a small length scale. This paper extends our previous finite element analysis by incorporating the microscopic responses into a macroscopic domain by using a submodeling technique. The detailed study of microstructures at crack tips show a stochastic toughness of membranes due to the random nature of fibrous networks. Further, the sizes of crack tip region, which are sufficient to provide a reasonable prediction of fracture behaviour in a specific type of fibrous network, were presented. Future work includes improving the current linear assumption in the macroscopic models to become nonlinear.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Superconducting fault current limiter design using parallel-connected YBCO thin films

Superconducting Fault Current Limiters (SFCLs) are able to reduce fault currents to an acceptable value, reducing potential mechanical and thermal damage to power system apparatus and allowing more flexibility in power system design and operation. The device can also help avoid replacing circuit breakers whose capacity has been exceeded. Due to limitations in current YBCO thin film manufacturing processes, it is not easy to obtain one large thin film that satisfies the specifications for high voltage and large current applications. The combination of standardized thin films has merit to reduce costs and maintain device quality, and it is necessary to connect these thin films in different series and parallel configurations in order to meet these specifications. In this paper, the design of a resistive type SFCL using parallel-connected YBCO thin films is discussed, including the role of a parallel resistor and the influence of individual thin film characteristics, based on both theory and experimental results. © 2009 IEEE.