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Some basic results that help in determining the Diversity-Multiplexing Tradeoff (DMT) of cooperative multihop networks are first identified. As examples, the maximum achievable diversity gain is shown to equal the min-cut between source and sink, whereas the maximal multiplexing gain is shown to equal the minimum rank of the matrix characterizing the MIMO channel appearing across a cut in the network. Two multi-hop generalizations of the two-hop network are then considered, namely layered networks as well as a class of networks introduced here and termed as K-parallel-path (KPP) networks. The DMT of KPP networks is characterized for K > 3. It is shown that a linear DMT between the maximum diversity dmax and the maximum multiplexing gain of 1 is achievable for fully-connected, layered networks. Explicit coding schemes achieving the DMT that make use of cyclic-division-algebra-based distributed space-time codes underlie the above results. Two key implications of the results in the paper are that the half-duplex constraint does not entail any rate loss for a large class of cooperative networks and that simple, amplify-and-forward protocols are often sufficient to attain the optimal DMT.

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GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.

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Single crystals of a-hopeite exhibiting high transparency were grown by single diffusion gel growth technique. Single crystal X-ray diffraction analysis reveals that the crystal belongs to orthorhombic system. The values of several structural and physical parameters have been determined for the grown crystal. The optical absorption study reveals the transparency of the crystal and is noticed in the entire visible region and the cut-off wavelength was found to be 230 nm. The optical band gap found to be at 3.25 eV. The dependence of extinction co-efficient (k) and the refractive index (n) on the wavelength was also shown. The dielectric constant and dielectric loss of the crystal was studied as a function of frequency and temperature. Transport properties of the grown crystal have been studied from the Cole-Cole plot. (C) 2010 Elsevier GmbH. All rights reserved.

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Several unsymmetrically substituted aromatic donor acceptor disulfides have been synthesized and analysed for their second order nonlinear optical properties. These molecules exhibit moderately high first hyperpolarizability (beta) with excellent transparency in the visible region. Most of the unsymmetrical disulfides have a cut-off wavelength below 420 nm. Calculations show that the molecules have an asymmetric charge distribution around the disulfide bond which is responsible for their high beta values. These results provide motivation for the design and synthesis of nonlinear optical chromophores with multiple disulfide bonds for large second order nonlinearity and excellent visible transparency.

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Low-pressure MOCVD, with tris(2,4 pentanedionato)aluminum(III) as the precursor, was used in the present investigation to coat alumina on to cemented carbide cutting tools. To evaluate the MOCVD process, the efficiency in cutting operations of MOCVD-coated tools was compared with that of tools coated using the industry-standard CVD process.Three multilayer cemented carbide cutting tool inserts, viz., TiN/TiC/WC, CVD-coated Al2O3 on TiN/TiC/WC, and MOCVD-coated Al2O3 on TiN/TiC/WC, were compared in the dry turning of mild steel. Turning tests were conducted for cutting speeds ranging from 14 to 47 m/min, for a depth of cut from 0.25 to 1 mm, at the constant feed rate of 0.2 mm/min. The axial, tangential, and radial forces were measured using a lathe tool dynamometer for different cutting parameters, and the machined work pieces were tested for surface roughness. The results indicate that, in most of the cases examined, the MOCVD-coated inserts produced a smoother surface finish, while requiring lower cutting forces, indicating that MOCVD produces the best-performing insert, followed by the CVD-coated one. The superior performance of MOCVD-alumina is attributed to the co-deposition of carbon with the oxide, due to the very nature of the precursor used, leading to enhanced mechanical properties for cutting applications in harsh environment.

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A steel disc is cut using a single point tool. The coefficient of friction of the nascent cut surface is measured by a spherical steel pin situated in close proximity of the point of cutting. The tool, disc and the friction pin are immersed in an oil in water emulsion bath during the experiment. The purpose of the experiments conducted here is to record the effect of hydrophilic/lypophilic balance (HLB) of the emulsifier on the lubricity experienced in the cutting operation. The more lypophilic emulsifiers were found to give greater lubricity than what is recorded when the emulsifier is more hydrophilic. XPS and FTIR spectroscopy are used to explore the tribofilm generated on the nascent cut surface to indicate a possible rationale for the effect. (C) 2011 Elsevier B.V. All rights reserved.

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We present the concept, prototypes, and an optimal design method for a compliant mechanism kit as a parallel to the kits available for rigid-body mechanisms. The kit consists of flexible beams and connectors that can be easily hand-assembled using snap fits. It enables users, using their creativity and mechanics intuition, to quickly realize a compliant mechanism. The mechanisms assembled in this manner accurately capture the essential behavior of the topology, shape, size and material aspects and thereby can lead the way for a real compliant mechanism for practical use. Also described in this paper are the design of the connector to which flexible beams can be added in eight different directions; and prototyping of the spring steel connectors as well as beams using wire-cut electro discharge machining. It is noted in this paper that the concept of the kit also resolves a discrepancy in the finite element (FE) modeling of beam-based compliant mechanisms. The discrepancy arises when two or more beams are joining at one point and thus leading to increased stiffness. After resolving this discrepancy, this work extends the topology optimization to automatically generate designs that can be assembled with the kit. Thus, the kit and the accompanying analysis and optimal synthesis procedures comprise a self-contained educational as well as a research and pragmatic toolset for compliant mechanisms. The paper also illustrates how human creativity finds new ways of using the kit beyond the original intended use and how it is useful even for a novice to design compliant mechanisms.

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Metal stencils are well known in electronics printing application such as for dispensing solder paste for surface mounting, printing embedded passive elements in multilayer structures, etc. For microprinting applications using stencils, the print quality depends on the smoothness of the stencil aperture and its dimensional accuracy, which in turn are invariably related to the method used to manufacture the stencils. In this paper, fabrication of metal stencils using a photo-defined electrically assisted etching method is described. Apertures in the stencil were made in neutral electrolyte using three different types of impressed current, namely, dc, pulsed dc, and periodic pulse reverse (PPR). Dimensional accuracy and wall smoothness of the etched apertures in each of the current waveforms were compared. Finally, paste transfer efficiency of the stencil obtained using PPR was calculated and compared with those of a laser-cut electropolished stencil. It is observed that the stencil fabricated using current in PPR waveform has better dimensional accuracy and aperture wall smoothness than those obtained with dc and pulsed dc. From the paste transfer efficiency experiment, it is concluded that photo-defined electrically assisted etching method can provide an alternate route for fabrication of metal stencils for future microelectronics printing applications.

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We consider single-source single-sink (ss-ss) multi-hop relay networks, with slow-fading links and single-antenna half-duplex relay nodes. While two-hop cooperative relay networks have been studied in great detail in terms of the diversity-multiplexing tradeoff (DMT), few results are available for more general networks. In this paper, we identify two families of networks that are multi-hop generalizations of the two-hop network: K-Parallel-Path (KPP)networks and layered networks.KPP networks, can be viewed as the union of K node-disjoint parallel relaying paths, each of length greater than one. KPP networks are then generalized to KPP(I) networks, which permit interference between paths and to KPP(D) networks, which possess a direct link from source to sink. We characterize the DMT of these families of networks completely for K > 3. Layered networks are networks comprising of layers of relays with edges existing only between adjacent layers, with more than one relay in each layer. We prove that a linear DMT between the maximum diversity dmax and the maximum multiplexing gain of 1 is achievable for single-antenna fully-connected layered networks. This is shown to be equal to the optimal DMT if the number of relaying layers is less than 4.For multiple-antenna KPP and layered networks, we provide an achievable DMT, which is significantly better than known lower bounds for half duplex networks.For arbitrary multi-terminal wireless networks with multiple source-sink pairs, the maximum achievable diversity is shown to be equal to the min-cut between the corresponding source and the sink, irrespective of whether the network has half-duplex or full-duplex relays. For arbitrary ss-ss single-antenna directed acyclic networks with full-duplex relays, we prove that a linear tradeoff between maximum diversity and maximum multiplexing gain is achievable.Along the way, we derive the optimal DMT of a generalized parallel channel and derive lower bounds for the DMT of triangular channel matrices, which are useful in DMT computation of various protocols. We also give alternative and often simpler proofs of several existing results and show that codes achieving full diversity on a MIMO Rayleigh fading channel achieve full diversity on arbitrary fading channels. All protocols in this paper are explicit and use only amplify-and-forward (AF) relaying. We also construct codes with short block-lengths based on cyclic division algebras that achieve the optimal DMT for all the proposed schemes.Two key implications of the results in the paper are that the half-duplex constraint does not entail any rate loss for a large class of cooperative networks and that simple AF protocols are often sufficient to attain the optimal DMT

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In this paper, we present dynamic voltage and frequency Managed 256 x 64 SRAM block in 65 nm technology, for frequency ranging from 100 MHz to 1 GHz. The total energy is minimized for any operating frequency in the above range and leakage energy is minimized during standby mode. Since noise margin of SRAM cell deteriorates at low voltages, we propose static noise margin improvement circuitry, which symmetrizes the SRAM cell by controlling the body bias of pull down NMOS transistor. We used a 9T SRAM cell that isolates Read and hold noise margin and has less leakage. We have implemented an efficient technique of pushing address decoder into zigzag- super-cut-off in stand-by mode without affecting its performance in active mode of operation. The read bit line (RBL) voltage drop is controlled and pre-charge of bit lines is done only when needed for reducing power wastage.

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This article deals with the axial wave propagation properties of a coupled nanorod system with consideration of small scale effects. The nonlocal elasticity theory has been incorporated into classical rod/bar model to capture unique features of the coupled nanorods under the umbrella of continuum mechanics theory. Nonlocal rod model is developed for coupled nanorods. The strong effect of the nonlocal scale has been obtained which leads to substantially different wave behavior of nanorods from those of macroscopic rods. Explicit expressions are derived for wavenumber, cut-off frequency and escape frequency of nanorods. The analysis shows that the wave characteristics of nanorods are highly over estimated by the classical rod model, which ignores the effect of small-length scale. The studies also shows that the nonlocal scale parameter introduces certain band gap region in axial or longitudinal wave mode, where no wave propagation occurs. This is manifested in the spectrum cures as the region, where the wavenumber tends to infinite or wave speed tends to zero. The effect of the coupled spring stiffness is also capture in the present analysis. It has been also shown that the cut-off frequency increases as the stiffness of the coupled spring increases and also the coupled spring stiffness has no effect on escape frequency of the axial wave mode in the nanorod. This cut-off frequency is also independent of the nonlocal small scale parameter. The present study may bring in helpful insights while investigating multiple-nanorod-system-models for future nano-optomechanical systems applications. The results can also provide useful guidance for the study and design of the next generation of nanodevices that make use of the wave propagation properties of coupled single-walled carbon nanotubes or coupled nanorods. (C) 2011 Elsevier Ltd. All rights reserved.

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Abstract—A method of testing for parametric faults of analog circuits based on a polynomial representaion of fault-free function of the circuit is presented. The response of the circuit under test (CUT) is estimated as a polynomial in the applied input voltage at relevant frequencies apart from DC. Classification of CUT is based on a comparison of the estimated polynomial coefficients with those of the fault free circuit. The method needs very little augmentation of circuit to make it testable as only output parameters are used for classification. This procedure is shown to uncover several parametric faults causing smaller than 5 % deviations the nominal values. Fault diagnosis based upon sensitivity of polynomial coefficients at relevant frequencies is also proposed.

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Given an undirected unweighted graph G = (V, E) and an integer k ≥ 1, we consider the problem of computing the edge connectivities of all those (s, t) vertex pairs, whose edge connectivity is at most k. We present an algorithm with expected running time Õ(m + nk3) for this problem, where |V| = n and |E| = m. Our output is a weighted tree T whose nodes are the sets V1, V2,..., V l of a partition of V, with the property that the edge connectivity in G between any two vertices s ε Vi and t ε Vj, for i ≠ j, is equal to the weight of the lightest edge on the path between Vi and Vj in T. Also, two vertices s and t belong to the same Vi for any i if and only if they have an edge connectivity greater than k. Currently, the best algorithm for this problem needs to compute all-pairs min-cuts in an O(nk) edge graph; this takes Õ(m + n5/2kmin{k1/2, n1/6}) time. Our algorithm is much faster for small values of k; in fact, it is faster whenever k is o(n5/6). Our algorithm yields the useful corollary that in Õ(m + nc3) time, where c is the size of the global min-cut, we can compute the edge connectivities of all those pairs of vertices whose edge connectivity is at most αc for some constant α. We also present an Õ(m + n) Monte Carlo algorithm for the approximate version of this problem. This algorithm is applicable to weighted graphs as well. Our algorithm, with some modifications, also solves another problem called the minimum T-cut problem. Given T ⊆ V of even cardinality, we present an Õ(m + nk3) algorithm to compute a minimum cut that splits T into two odd cardinality components, where k is the size of this cut.

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We present a fast algorithm for computing a Gomory-Hu tree or cut tree for an unweighted undirected graph G = (V,E). The expected running time of our algorithm is Õ(mc) where |E| = m and c is the maximum u-vedge connectivity, where u,v ∈ V. When the input graph is also simple (i.e., it has no parallel edges), then the u-v edge connectivity for each pair of vertices u and v is at most n-1; so the expected running time of our algorithm for simple unweighted graphs is Õ(mn).All the algorithms currently known for constructing a Gomory-Hu tree [8,9] use n-1 minimum s-t cut (i.e., max flow) subroutines. This in conjunction with the current fastest Õ(n20/9) max flow algorithm due to Karger and Levine [11] yields the current best running time of Õ(n20/9n) for Gomory-Hu tree construction on simpleunweighted graphs with m edges and n vertices. Thus we present the first Õ(mn) algorithm for constructing a Gomory-Hu tree for simple unweighted graphs.We do not use a max flow subroutine here; we present an efficient tree packing algorithm for computing Steiner edge connectivity and use this algorithm as our main subroutine. The advantage in using a tree packing algorithm for constructing a Gomory-Hu tree is that the work done in computing a minimum Steiner cut for a Steiner set S ⊆ V can be reused for computing a minimum Steiner cut for certain Steiner sets S' ⊆ S.

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In the present talk, we will discuss a six dimensional mass generation for the neutrinos. The SM neutrinos live on a 3-brane and interact via a brane localised mass term with a Weyl singlet neutrino residing in all the six dimensions. We present the physical neutrino mass spectrum and show that the active neutrino mass and the KK masses have a logarithmic cut-off dependence at the tree level. This translates in to a renormalisation group running of n -masses above the KK compactification scale coming from classical effects without any SM particles in the spectrum.This could have effects in neutrinoless double beta decay experiments.