植物对重金属砷和镉胁迫适应的分子机理初探

随着现代工业的发展，重金属污染日趋严重。重金属污染引发的环境和健康问题在许多国家都有报道，我国的重金属污染状况也不容乐观。土壤和水体中的重金属污染可以通过食物链进入人体，对人类健康造成很大的危害，如诱发癌症 和畸胎等。 植物修复是一种利用植物对重金属或有机污染物的超富集能力清除或减低污染的环境生物技术。植物修复的生物学机制的研究为这项技术走向实用化奠定了基础。植物修复近期的进展可能来自于可更有效地富集重金属的植物品种的选择、土壤条件的改善等;但长远看来，植物修复技术的巨大进步将取决于新的可更好地抵抗重金属或降解有机毒物的基因的鉴定和克隆，并通过转基因技术创造一批新的植物品种，如可迅速大量富集重金属的高生物量的用作环境净化的植物，以及可排拒重金属吸收的粮食、蔬菜和水果等作物。 本研究针对砷污染的植物修复机制，以超富集砷的凤尾蕨属植物——蜈蚣草为试材取得了如下进展： 1． 以从砷污染地区采集的蜈蚣草（Pteris vittataL．）为植物材料，利用抑制消减杂交(SSH)分离了经砷诱导处理与其对照间表达有差异的cDNA片段，以期得到与砷富集密切相关的基因。其中筛选到的一个cDNA片段与ABC transporter (ATP-binding cassette transporter)有较高的同源性。通过RACE方法对该基因进行了克隆，并进行了初步的结构和功能分析。结果表明所获得的PvABCTl (Accession No. AY496966)为一全长cDNA，长度为2165 bp，其中开读框架为1791 bp，编码597个氨基酸。该基因所编码的蛋白中含有2个ABC transporter特性结构域，1个ATP-binding cassette和2个ATP/GTP结合位点(P-loop)，没有明显的跨膜区。 2． 对蜈蚣草在砷胁迫下PvABCT1基因的表达模式进行了研究。转录水平分析表明PvABCT1的表达受砷的诱导。进一步通过PvABCTl-GFP融合基因在洋葱细胞中的表达进行亚细胞定位，结果显示该基因可能定位于细胞质中。 3． 为了研究所克隆的PvABCT1基因的功能，本研究构建了PvABCT1的酵母表达载体，把该基因转入因ACR3基因缺失而对砷敏感的酵母突变株。酵母功能互补实验表明PvABCT1不仅不能与ACR3基因功能互补，反而使酵母对砷的敏感性增加，同时酵母细胞中的砷含量较未转化的酵母细胞增加。即在转入PvABCT1后，酵母细胞吸收了更多的砷。这暗示该基因与蜈蚣草中砷的高吸收有关。 针对食品重金属污染问题，本研究探讨了减低蔬菜对重金属吸收的方法及其 作用机理，取得了如下进展： 1．研究了钙离子和镧离子对镉离子胁迫下生菜种子萌发和植株生长的影响，结果表明在种子萌发时外施4 mM CaCI2或0.04 mg/L La(N03)3均可提高生菜对重金属镉的抗性。 2．通过检测0.5 mM CdCl2胁迫下生菜植株中的镉含量以及外施钙离子或镧离子后相应的镉含量，发现4 mM CaCl2可以增加镉胁迫下生菜植株中镉的积累;而0.04 mg/L La(N03)3可以降低镉胁迫下生菜植株中镉的积累。 3．对生菜中植物络合素合酶基因进行了克隆，通过RT-PCR分析以及植物络合素( phytochelatins，PCs)的检测，探讨了外施钙离子或镧离子对镉胁迫下生菜植株中植物络合素合酶基因在转录水平的表达量、植物络合素含量以及镉的积累三者之间的关系。结果表明：4 mM CaCl2可以提高镉胁迫下生菜植株中植物络合素合酶基因在转录水平的表达以及植物络合素的含量，增加镉的积累;而0.04 mg/L La(N03)3虽然同样可以提高植物络合素合酶基因在转录水平的表达以及植物络合素的含量，却能降低镉胁迫下生菜植株中镉的积累。这暗示外施钙离子可以促进用于重金属污染环境修复的植物对重金属的吸收，而外施镧离子可以用于降低叶菜类蔬菜中重金属镉的积累。

Effects of different types of drying on the nutritive value of proteins in the fishmeals

A comparative study on the effect of different types of drying on the nutritive value of the proteins in the different fishmeals of known history was made. From the observations, it is clear that the mode of drying has got little or no effect on the nutritive value of the meal as revealed by the chemical indices of available lysine and pepsin digestibility, provided enough precautions were taken to avoid scorching during drying process. Sun dried meals are in no way inferior to the meals prepared by hot-air, steam or vacuum drying.

Studies on the preparation of fish protein concentrate

The paper deals with the method of preparation of an edible fish protein concentrate from cheap miscellaneous fish. The method consists in cooking the fish with 0.5% glacial acetic acid, and extracting batch—wise, using ethyl alcohol followed by an azeotropic mixture of hexane and alcohol (B. Pt. 58-68°C). The product is finally vacuum dried during which the residual solvent is also removed. The concentrate prepared by this method contains 85% protein of which 96% is pepsin digestible. The product is practically odorless and almost white in color.

Field emission from tetrahedrally bonded amorphous carbon

The field emission behaviour of a series of Tetrahedrally Bonded Amorphous Carbon (ta-C) films has been measured. The films were produced using a Filtered Cathodic Vacuum Arc System. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have a threshold field of order 10-15 V/μm and optimally nitrogen-doped films exhibit fields as low as 5 V/μm. The emission as a function of back contact and front surface condition has also been considered and shows that the back contact has only a minor effect on emission efficiency. However, after etching in either an oxygen or hydrogen plasma, the films show a marked reduction in threshold field, down to as low as 2-3 V/μm, and a marked improvement in emission site density.

Amorphous carbon for use in thin film transistors

Tetrahedrally bonded amorphous carbon (ta-C) is a new type of semiconducting thin film material. It can be produced at room temperature using the Filtered Cathodic Vacuum Arc technique. The as-grown undoped ta-C is p-type in nature but it can be n-doped by the addition of nitrogen during deposition. This paper will describe thin film transistor design and fabrication using ta-C as the active channel layer.

An investigation into the residual stresses in an aluminium 2024 test weld

This paper uses finite element (FE) analysis to examine the residual stresses generated during the TIG welding of aluminium aerospace alloys. It also looks at whether such an approach could be useful for evaluating the effectiveness of various residual stress control techniques. However, such simulations cannot be founded in a vacuum. They require accurate measurements to refine and validate them. The unique aspect of this work is that two powerful engineering techniques are combined: FE modelling and neutron diffraction. Weld trials were performed and the direct measurement of residual strain made using the ENGIN neutron diffraction strain scanning facility. The predicted results show an excellent agreement with experimental values. Finally this model is used to simulate a weld made using a "Low Stress No Distortion" (LSND) technique. Although the stress reduction predicted is only moderate, the study suggests the approach to be a quick and efficient means of optimising such techniques.

Tetrahedrally bonded amorphous carbon for field-emission displays

Field emission from a series of tetrahedrally bonded amorphous-carbon (ta-C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have threshold fields of the order 10-15 V/μm and optimally nitrogen doped films exhibited fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.

Bonding regimes of nitrogen in amorphous carbon

Nitrogen can have numerous effects on diamond-like carbon: it can dope, it can form the hypothetical superhard compound C3N4, or it can create fullerene-like bonding structures. We studied amorphous carbon nitrogen films deposited by a filtered cathodic vacuum arc as a function of nitrogen content, ion energy and deposition temperature. The incorporation of nitrogen from 10-2 to 10 at% was measured by secondary ion mass spectrometry and elastic recoil detection analysis and was found to vary slightly sublinearly with N2 partial pressure during deposition. In the doping regime from 0 to about 0.4% N, the conductivity changes while the sp3 content and optical gap remain constant. From 0.4 to approximately 10% N, existing sp2 sites condense into clusters and reduce the band gap. Nitrogen contents over 10% change the bonding from mainly sp3 to mainly sp2. Ion energies between 20 and 250 eV do not greatly modify this behaviour. Deposition at higher temperatures causes a sudden loss of sp3 bonding above about 150 °C. Raman spectroscopy and optical gap data show that existing sp2 sites begin to cluster below this temperature, and the clustering continues above this temperature. This transition is found to vary only weakly with nitrogen addition, for N contents below 10%.

Carbon based bottom gate thin film transistor

This paper describes the fabrication and characterization of a carbon based, bottom gate, thin film transistor (TFT). The active layer is formed from highly sp2 bonded nitrogenated amorphous carbon (a-C:N) which is deposited at room temperature using a filtered cathodic vacuum arc technique. The TFT shows p-channel operation. The device exhibits a threshold voltage of 15 V and a field effect mobility of 10-4 cm2 V-1 s-1 . The valence band tail of a-C:N is observed to be much shallower than that of a-Si:H, but does not appear to severely impede the shift of the Fermi level. This may indicate that a significant proportion of the a-C tail states can still contribute to conduction.

Density, sp3 content and internal layering of DLC films by X-ray reflectivity and electron energy loss spectroscopy

A variety of hydrogenated and non-hydrogenated amorphous carbon thin films have been characterized by means of grazing-incidence X-ray reflectivity (XRR) to give information about their density, thickness, surface roughness and layering. We used XRR to validate the density of ta-C, ta-C:H and a-C:H films derived from the valence plasmon in electron energy loss spectroscopy measurements, up to 3.26 and 2.39 g/cm3 for ta-C and ta-C:H, respectively. By comparing XRR and electron energy loss spectroscopy (EELS) data, we have been able for the first time to fit a common electron effective mass of m*/me = 0.87 for all amorphous carbons and diamond, validating the `quasi-free' electron approach to density from valence plasmon energy. While hydrogenated films are found to be substantially uniform in density across the film, ta-C films grown by the filtered cathodic vacuum arc (FCVA) show a multilayer structure. However, ta-C films grown with an S-bend filter show a high uniformity and only a slight dependence on the substrate bias of both sp3 and layering.

Field emission site densities of nanostructured carbon

The field emission properties of nanostructured carbon films deposited by cathodic vacuum arc in a He atmosphere have been studied by measuring the emission currents and the emission site density. The films have an onset field of ∼ 3 V/μm. The emission site density is viewed on a phosphor anode and it increases rapidly with applied field. It is assumed that the emission occurs from surface regions with a range of field enhancement factors but with a constant work function. The field enhancement factor is found to have an exponential distribution.

Optical gap in carbon nitride films

In this paper we study the effect of introducing nitrogen into different carbon networks. Two kinds of carbon nitride films were deposited: (a) Using a DC-magnetron sputtering system sp2 bonded carbon nitride (a-CN) films were deposited and (b) Using a combination of filtered cathodic vacuum arc and a low-pressure N2 plasma source, N was introduced into sp3 carbon networks (ta-C), leading to the formation of a more dense CN film named ta-CN. For ta-CN films we found that the optical gap initially decreases as the N content and the sp2 fraction rises, but above a certain N quantity there is a level-off of the value, and the gap then remains constant despite further increases in the fraction and clustering of the sp2 phase. However, for a-CN films the optical gap increases with the nitrogen content. These two different trends are not easily explained using the same framework as that for carbon films, in which any decrease in the band gap is associated to an increase in the sp2 fraction or its clustering. Here we discuss the conditions that lead to high optical gap in sp2-bonded carbon nitride samples, which are clearly not associated to the presence of any crystalline super-hard phase. We also compared other differences in properties observed between the two films, such as deposition rate, infrared and Raman spectra. © 2003 Elsevier Science B.V. All rights reserved.

Reduction of porosity in RE1Ba2Cu3Oy pseudo crystals

The distribution of porosity in Y1Ba2Cu3Oy (Y-123) pseudo-crystals prepared by hot seeded melt growth of precursor pellet samples pre-sintered at elevated temperatures in air or vacuum has been investigated. The results demonstrate that the porosity within the Y-123 pseudo-crystal matrix could be reduced dramatically by pre-sintering in vacuum, compared with that for precursor pellets processed in air.

SU8 bio-chemical sensor microarrays

Microfabricated cantilevers have recently attracted considerable attention as novel label-free chemical and biological biosensors which translate surface reactions into nanomechanical bending motion. However these studies have primarily focused on commercially available silicon cantilevers and relatively little work has been performed on cantilevers fabricated from other materials. Polymeric materials, offer significant advantages over silicon by virtue of the low Young's modulus, ease of microfabrication and reduced cost. In this paper, we report a non-vacuum fabrication process to produce arrays of SU8 cantilevers and demonstrate their application as chemical sensors using in situ reference cantilevers. © 2006 Elsevier B.V. All rights reserved.