996 resultados para Resonant tunneling diode


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We investigate the angular correlations between the photons emitted in the dielectronic recombination (DR) of initially hydrogenlike heavy ions. The theoretical analysis is performed based on a density-matrix approach and Dirac's relativistic theory. Special emphasis has been placed upon the effects of the higher-order, nondipole terms in the expansion of the electron-photon interaction. To illustrate these effects, we present and discuss detailed calculations for K-LL DR of initially hydrogenlike xenon, gold, and uranium. These computations show that the angular correlations are significantly affected by interference between the leading electric-dipole (E1) and the magnetic-quadrupole (M2) transitions.

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Using the R-matrix Floquet theory we have carried out non-perturbative, ab initio one- and two-colour calculations of the multiphoton ionization of magnesium with the laser frequencies chosen such that the initial state of the atom is resonantly coupled with autoionizing resonances of the atom. Good agreement is obtained with previous calculations in the low-intensity regimes. The single-photon ionization from the 3s3p P excited state of magnesium has been studied in the vicinity of the 3p S autoionizing resonance at non-perturbative laser intensities. Laser-induced degenerate states (LIDS) are observed for modest laser intensities. By adding a second laser which resonantly couples the 3p S = and 3p3d P autoionizing levels, we show that, due to the small width of the 3p3d P state, LIDS occur between this state and the 3s3p P state at intensities of the first laser below 10 W cm . We next investigate the case in which the first laser induces a resonant two-photon coupling between the ground state and the 3p S autoionizing state, while the second laser again resonantly couples the respective 3p S and 3p3d P autoionizing states. At weak intensities, our calculations compare favourably with recent experimental data and calculations. We show that when the intensity of the first laser is increased, the effect of an additional autoionizing state, the 4s5s S state, becomes significant. This state is coupled to the 3p3d P autoionizing level by one photon, inducing a triply resonant processes. We show that LIDS occur among the three autoionizing levels and we discuss their effect on the decay rate of the ground state. We consider dressed two- and three-level atoms which can be used to model the results of our calculations.

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Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of similar to 100 K) in the diode resistance-temperature (R(D)-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R(D)-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.