988 resultados para PIN diodes


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Stellite 6® powders were deposited on carbon steel using Supersonic Laser Deposition. The microstructure and performance of the coatings were examined using SEM, optical microscopy, EDS, XRD, microhardness testing and pin-on-disc wear testing. The results showed that the microstructure and wear behaviour of the most successful SLD deposition conditions with N2 at a pressure of 30bar, a temperature of 450°C and a deposition power of 1.5kW were compared with that of optimised laser cladding. © 2012 Elsevier B.V.

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The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near-circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding material. Atomic force microscopy shows that the height of trench-enclosed areas differs from that of the surrounding quantum well structure, and that trenches are unrelated to the commonly observed V-defects in InGaN films, despite being occasionally intersected by them. Cross-sectional electron microscopy analysis of trenches with raised centres suggests that the red shift in the observed cathodoluminescence peak emission may be due to the quantum wells being thicker in the trench-enclosed regions than in the surrounding quantum well area. The mechanism of trench formation and its implication for the control of the emission properties of light-emitting diodes is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules. © 2012 IEEE.

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The paper presents a multiscale procedure for the linear analysis of components made of lattice materials. The method allows the analysis of both pin-jointed and rigid-jointed microtruss materials with arbitrary topology of the unit cell. At the macroscopic level, the procedure enables to determine the lattice stiffness, while at the microscopic level the internal forces in the lattice elements are expressed in terms of the macroscopic strain applied to the lattice component. A numeric validation of the method is described. The procedure is completely automated and can be easily used within an optimization framework to find the optimal geometric parameters of a given lattice material. © 2011 Elsevier Ltd. All rights reserved.

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Electron and hole conducting 10-nm-wide polymer morphologies hold great promise for organic electro-optical devices such as solar cells and light emitting diodes. The self-assembly of block-copolymers (BCPs) is often viewed as an efficient way to generate such materials. Here, a functional block copolymer that contains perylene bismide (PBI) side chains which can crystallize via π-π stacking to form an electron conducting microphase is patterned harnessing hierarchical electrohydrodynamic lithography (HEHL). HEHL film destabilization creates a hierarchical structure with three distinct length scales: (1) micrometer-sized polymer pillars, containing (2) a 10-nm BCP microphase morphology that is aligned perpendicular to the substrate surface and (3) on a molecular length scale (0.35-3 nm) PBI π-π-stacks traverse the HEHL-generated plugs in a continuous fashion. The good control over BCP and PBI alignment inside the generated vertical microstructures gives rise to liquid-crystal-like optical dichroism of the HEHL patterned films, and improves the electron conductivity across the film by 3 orders of magnitude. © 2013 American Chemical Society.

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A tribometer, based on a pin-on-disc machine, uses a PZT drive to produce small sinusoidal fluctuations of sliding speed. The frequency and amplitude of these fluctuations can be controlled, and the dynamic response measured. Preliminary test results show that the dynamic friction variation is influenced by the contact materials, normal force, oscillation frequency and steady sliding speed. The variation of friction force amplitude and phase with frequency gives clues about the underlying state variables determining the friction. Modelling studies illustrate the expected behaviour for idealized friction laws governed by, for example, sliding speed, contact temperature, and "rate-state" laws. © 2008 SAE International.

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Smooth and continuous ZnO films consisting of densely packed ZnO nanorods (NRs), which can be used for electronic device fabrication, were synthesized using a hydro-thermo-chemical solution deposition method. Such devices would have the novelty of high performance, benefiting from the inherited unique properties of the nanomaterials, and can be fabricated on these smooth films using a conventional, low cost planar process. Photoluminescence measurements showed that the NR films have much stronger shallow donor to valence band emissions than those from discrete ZnO NRs, and hence have the potential for the development of ZnO light emission diodes and lasers, etc. The NR films have been used to fabricate large area surface acoustic wave devices by conventional photolithography. These demonstrated two well-defined resonant peaks and their potential for large area device applications. The chemical solution deposition method is simple, reproducible, scalable and economic. These NR films are suitable for large scale production on cost-effective substrates and are promising for various fields such as sensing systems, renewable energy and optoelectronic applications.

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This paper presents a comparison between theoretical predictions and experimental results from a pin-on-disc test rig exploring friction-induced vibration. The model is based on a linear stability analysis of two systems coupled by sliding contact at a single point. Predictions are compared with a large volume of measured squeal initiations that have been post-processed to extract growth rates and frequencies at the onset of squeal. Initial tests reveal the importance of including both finite contact stiffness and a velocity-dependent dynamic model for friction, giving predictions that accounted for nearly all major clusters of squeal initiations from 0 to 5 kHz. However, a large number of initiations occurred at disc mode frequencies that were not predicted with the same parameters. These frequencies proved remarkably difficult to destabilise, requiring an implausibly high coefficient of friction. An attempt has been made to estimate the dynamic friction behaviour directly from the squeal initiation data, revealing complex-valued frequency-dependent parameters for a new model of linearised dynamic friction. These new parameters readily destabilised the disc modes and provided a consistent model that could account for virtually all initiations from 0 to 15 kHz. The results suggest that instability thresholds for a wide range of squeal-type behaviour can be predicted, but they highlight the central importance of a correct understanding and accurate description of dynamic friction at the sliding interface. © 2013 Elsevier Ltd. All rights reserved.

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Predictive models of friction-induced vibration have proved elusive despite decades of research. There are many mechanisms that can cause brake squeal; friction coupled systems can be highly sensitive to small perturbations; and the dynamic properties of friction at the contact zone seem to be poorly understood. This paper describes experimental and theoretical work aimed at identifying the key ingredients of a predictive model. A large-scale experiment was carried out to identify squeal initiations using a pin-on-disc test rig: approximately 30,000 squeal initiations were recorded, covering a very wide range of frequencies. The theoretical model allows for completely general linear systems coupled at a single sliding point by friction: squeal is predicted using a linearised stability analysis. Results will be presented that show that almost all observed squeal events can be predicted within this model framework, but that some subsets require innovative friction modelling: predictions are highly dependent on the particular choice of friction model and its associated parameters. Copyright © 2012 by ASME.

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High power bandwidth-limited picosecond pulses with peak powers in excess of 200 mW have been generated using multi-contact distributed feedback laser diodes for the first time. The pulses have widths typically less than 10 ps, time-bandwidth products of as little as 0·24, and can be generated on demand at generator limited repetition rates of up to 140 MHz.

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The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

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Predictive models of friction-induced vibration have proved elusive despite decades of research. There are many mechanisms that can cause brake squeal; friction coupled systems can be highly sensitive to small perturbations; and the dynamic properties of friction at the contact zone seem to be poorly understood. This paper describes experimental and theoretical work aimed at identifying the key ingredients of a predictive model. A large-scale experiment was carried out to identify squeal initiations using a pin-on-disc test rig: approximately 30,000 squeal initiations were recorded, covering a very wide range of frequencies. The theoretical model allows for completely general linear systems coupled at a single sliding point by friction: squeal is predicted using a linearised stability analysis. Results will be presented that show that almost all observed squeal events can be predicted within this model framework, but that some subsets require innovative friction modelling: predictions are highly dependent on the particular choice of friction model and its associated parameters. Copyright © 2012 by ASME.

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The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected. © 2013 IEEE.

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Khawia saurogobii n. sp. is described from the intestine of the cyprinid fishes Saurogobio dabryi and Saurogobio dumerili in China. The new species belongs to the Lytocestidae and is placed in Khawia because of its afossate scolex, vitelline follicles in the cortical parenchyma, uterus not looping anterior to the cirrus sac, gonopores separate but close together in distinct genital atrium, external seminal vesicle absent, and postovarian follicles present. The new species differs from other congeneric species by the shape of the body markedly tapering posteriorly from the end of the anterior third, the shape of the scolex that is very short and markedly wider than the neck, spatulate without incisions, but shallow superficial grooves, vitelline follicles and testes starting immediately posterior to the scolex, and an ovary with long, posterior arms bent medially, thus giving the shape of an inverted A.

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Investigating the development of Eustrongylides ignotus in its definitive host would enable us to trace the complete life cycle of this nematode. Fourth-stage larvae isolated from naturally infected swamp eels (Monopterus albus) were used to infect domestic ducks (Anas platyrhynchos domestica [L.]). We observed that male and female worms exhibited different developmental patterns in host ducks. In males, the fourth molt occurred at day 1-2 post-infection (PI), after which they attained maturity on day 4 PI and died between day 7 and 9 PI. However, females underwent the fourth molt at day 2-4 PI, produced eggs from day 9 to 17 PI, and then degenerated and died. When compared 10 fourth-stage Female larvae, adult females demonstrated a considerable increase in total body size with a 151% increase in average body width and a 17% increase in average body length. However. the increase in size of the male larvae was not its significant as that in females. The average body width in adult males exhibited only a 45% increase over that in the larval stage.