Photodiodes array as potential diagnostic for measuring short bursts of K-alpha radiation from Ti targets irradiated with 45 fs laser pulses

We report on a study comparing absolute K-alpha yield from Ti foils measured with a calibrated system of an X-ray CCD coupled to a curved LiF Von-Hamos crystal spectrometer to the difference in the signals measured simultaneously with two similar photodiodes fitted with two different filters. Our data indicate that a combination of photodiodes with different filters could be developed into an alternative and inexpensive diagnostic for monitoring single shot pulsed emission in a narrow band of X-ray region.

Single-ionization of helium at Ti:sapphire wavelengths: rates and scaling laws

We present a numerical and theoretical study of intense-field single-electron ionization of helium at 390 nm and 780 nm. Accurate ionization rates (over an intensity range of (0.175-34) X10^14 W/ cm^2 at 390 nm, and (0.275 - 14.4) X 10^14 W /cm^2 at 780 nm) are obtained from full-dimensionality integrations of the time-dependent helium-laser Schroedinger equation. We show that the power law of lowest order perturbation theory, modified with a ponderomotive-shifted ionization potential, is capable of modelling the ionization rates over an intensity range that extends up to two orders of magnitude higher than that applicable to perturbation theory alone. Writing the modified perturbation theory in terms of scaled wavelength and intensity variables, we obtain to first approximation a single ionization law for both the 390 nm and 780 nm cases. To model the data in the high intensity limit as well as in the low, a new function is introduced for the rate. This function has, in part, a resemblance to that derived from tunnelling theory but, importantly, retains the correct frequency-dependence and scaling behaviour derived from the perturbative-like models at lower intensities. Comparison with the predictions of classical ADK tunnelling theory confirms that ADK performs poorly in the frequency and intensity domain treated here.

Fabrication of Ti-Al coatings by mechanical alloying method

By means of the mechanical alloying (MA) method, Al and Ti + Al coatings were deposited on Ti alloy substrates. During the mechano-activation processing, the substrate surface was impacted by a large number of flying balls along with particles of powder. The repeated ball collisions with the substrate resulted in the deposition of powder on its surface. MA technique produced Ti + Al coating with a thickness of 200 µm and Al one with a thickness of 50 µm after 2 h milling at room temperature. The as-synthesized coatings showed structures with high apparent density and free of porosity. The surface morphology of the MA-coatings was very rough. Annealing treatment led to the leveling of this uneven morphology. Annealing at temperatures ranging between 600 °C and 1100 °C gave different aluminide phases on the samples. In the case of Al coating, Al3Ti and Ti3Al compound were observed upon heating up to 1100 °C. In the case of Ti + Al coating, Al3Ti, Al2Ti, TiAl and Ti3Al were formed on the surface.