Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

Les antimoniures sont des semi-conducteurs III-V prometteurs pour le développement de dispositifs optoélectroniques puisqu'ils ont une grande mobilité d'électrons, une large gamme spectrale d'émission ou de détection et offrent la possibilité de former des hétérostructures confinées dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui émet ou détecte à une certaine longueur d'onde, les détails, à savoir comment sont déterminés les compositions et surtout les alignements de bande, sont rarement explicites. Très peu d'études fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tétramères lors de l'épitaxie par jets moléculaires existent, et les méthodes afin de déterminer l'alignement des bandes des binaires qui composent ces alliages donnent des résultats variables. Un modèle a été construit et a permis de prédire l'alignement des bandes énergétiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modèle tient compte des effets thermiques, des contraintes élastiques et peut aussi inclure le confinement pour des puits quantiques. De cette manière, il est possible de prédire la transition de type de recombinaison en fonction de la composition. Il est aussi montré que l'indium ségrègue en surface lors de la croissance par épitaxie par jets moléculaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait déjà été observé pour ce type de matériau. Il est possible d'éliminer le gradient de composition à cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'épaisseur d'indium en surface dépend de la température et peut être évaluée par un modèle simple simulant la ségrégation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb où l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb à basse température immédiatement après la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des éléments III. L'arsenic, dont la source fournit principalement des tétramères, ne s'incorpore pas de la même manière. Les tétramères occupent deux sites en surface et doivent interagir par paire afin de créer des dimères d'arsenic. Ces derniers pourront alors être incorporés dans l'alliage. Un modèle de cinétique de surface a été élaboré afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce résultat s'explique par le fait que les réactions de deuxième ordre dans la décomposition des tétramères d'arsenic ralentissent considérablement la réaction d'incorporation et permettent à l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est préférable d'utiliser une source de dimères d'arsenic, plutôt que de tétramères, afin de mieux contrôler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont été fabriqués et caractérisés optiquement afin d'observer le passage de recombinaison de type I à type II. Cependant, celui-ci n'a pas pu être observé puisque les spectres étaient dominés par un niveau énergétique dans le GaSb dont la source n'a pu être identifiée. Un problème dans la source de gallium pourrait être à l'origine de ce défaut et la résolution de ce problème est essentielle à la continuité de ces travaux.

Device Physics of Two-Dimensional Crystalline Materials

Thesis (Ph.D.)--University of Washington, 2016-07

Size effects on self-assembly and melting of silver-alkanethiolate on inert surfaces

Self-assembled materials produced in the reaction between alkanethiol and Ag are characterized and compared. It is revealed that the size of the Ag substrate has a significant role in the self-assembly process and determines the reaction products. Alkanethiol adsorbs on the surface of Ag continuous planar thin films and only forms self-assembled monolayers (SAMs), while the reaction between alkanethiol and Ag clusters on inert surfaces is more aggressive and generates a significantly larger amount of alkanethiolate. Two dissimilar products are yielded depending on the size of the clusters. Small Ag clusters are more likely to be converted into multilayer silver-alkanethiolate (AgSR, R = CnH2n+1) crystals, while larger Ag clusters form monolayer-protected clusters (MPCs). The AgSR crystals are initially small and can ripen into large lamellae during thermal annealing. The crystals have facets and flat terraces with extended area, and have a strong preferred orientation in parallel with the substrate surface. The MPCs move laterally upon annealing and reorganize into a single-layer network with their separation distance approximately equal to the length of an extended alkyl chain. AgSR lamellar crystals grown on inert surfaces provide an excellent platform to study the melting characteristics of crystalline lamellae of polymeric materials with the thickness in the nanometer scale. This system is also unique in that each crystal has integer number of layers – magic-number size (thickness). The size of the crystals is controlled by adjusting the amount of Ag and the annealing temperature. X-ray diffraction (XRD) and atomic force microscopy (AFM) are combined to accurately determine the size (number of layers) of the lamellar crystals. The melting characteristics are measured with nanocalorimetry and show discrete melting transitions which are attributed to the magic-number sizes of the lamellar crystals. The discrete melting temperatures are intrinsic properties of the crystals with particular sizes. Smaller lamellar crystals with less number of layers melt at lower temperatures. The melting point depression is inversely proportional to the total thickness of the lamellae – the product of the number of layers and the layer thickness.

Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

Photoemission techniques, utilizing a synchrotron light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2xl) structure was observed for the CdTe(lOO) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface structure revealed two components resulting from Cd surface atoms. The total intensity of these components accounts for a full monolayer of Cd atoms on the surface. A structural model is discussed commensurate with these results. Photoemission spectra of the Cd and Te 4d core levels indicate that Ag or Sb deposited on the CdTe(l00)-(2xl) surface at room temperature do not bound strongly to the surface Cd atoms. The room temperature growth characteristics for these two elements on the CdTe(lOO)-(2xl) are discussed. The growth at elevated substrate temperatures was also studied for Sb deposition. The InSb(lOO) surface differed from the CdTe(lOO) surface. Using molecular beam epitaxy, several structures could be generated for the InSb(lOO) surface, including a c(8x2), a c(4x4), an asymmetric (lx3), a symmetric (lx3), and a (lxl). Analysis of photoemission intensities and line shapes indicates that the c(4x4) surface is terminated with 1-3/4 monolayers of Sb atoms. The c(8x2) surface is found to be terminated with 3/4 monolayer of In atoms. Structural models for both of these surfaces are proposed based upon the photoemission results and upon models of the similar GaAs(lOO) structures. The room temperature growth characteristics of grey Sn on the lnSb(lOO)-c(4x4) and InSb(l00)-c(8x2) surfaces were studied with photoemission. The discontinuity in the valence band maximum for this semiconductor heterojunction system is measured to be 0.40 eV, independent of the starting surface structure and stoichiometry. This result is reconciled with theoretical predictions for heterostructure behavior.

Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

Les antimoniures sont des semi-conducteurs III-V prometteurs pour le développement de dispositifs optoélectroniques puisqu'ils ont une grande mobilité d'électrons, une large gamme spectrale d'émission ou de détection et offrent la possibilité de former des hétérostructures confinées dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui émet ou détecte à une certaine longueur d'onde, les détails, à savoir comment sont déterminés les compositions et surtout les alignements de bande, sont rarement explicites. Très peu d'études fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tétramères lors de l'épitaxie par jets moléculaires existent, et les méthodes afin de déterminer l'alignement des bandes des binaires qui composent ces alliages donnent des résultats variables. Un modèle a été construit et a permis de prédire l'alignement des bandes énergétiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modèle tient compte des effets thermiques, des contraintes élastiques et peut aussi inclure le confinement pour des puits quantiques. De cette manière, il est possible de prédire la transition de type de recombinaison en fonction de la composition. Il est aussi montré que l'indium ségrègue en surface lors de la croissance par épitaxie par jets moléculaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait déjà été observé pour ce type de matériau. Il est possible d'éliminer le gradient de composition à cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'épaisseur d'indium en surface dépend de la température et peut être évaluée par un modèle simple simulant la ségrégation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb où l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb à basse température immédiatement après la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des éléments III. L'arsenic, dont la source fournit principalement des tétramères, ne s'incorpore pas de la même manière. Les tétramères occupent deux sites en surface et doivent interagir par paire afin de créer des dimères d'arsenic. Ces derniers pourront alors être incorporés dans l'alliage. Un modèle de cinétique de surface a été élaboré afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce résultat s'explique par le fait que les réactions de deuxième ordre dans la décomposition des tétramères d'arsenic ralentissent considérablement la réaction d'incorporation et permettent à l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est préférable d'utiliser une source de dimères d'arsenic, plutôt que de tétramères, afin de mieux contrôler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont été fabriqués et caractérisés optiquement afin d'observer le passage de recombinaison de type I à type II. Cependant, celui-ci n'a pas pu être observé puisque les spectres étaient dominés par un niveau énergétique dans le GaSb dont la source n'a pu être identifiée. Un problème dans la source de gallium pourrait être à l'origine de ce défaut et la résolution de ce problème est essentielle à la continuité de ces travaux.

Corneal Re-epithelialization Stimulated by Diadenosine Polyphosphates Recruits RhoA/ROCK and ERK1/2 Pathways

Purpose. To investigate the role of ERK1/2 and RhoA/ROCK intracellular pathways in the modification of corneal re-epithelialization when stimulated by the diadenosine polyphosphates Ap4A and Ap3A. Methods. In wounded confluent SIRC (Statens Seruminstitut rabbit cornea) cell monolayers and in the presence or absence of Ap4A or Ap3A 100 μM, a battery of P2 receptor antagonists and inhibitors of tyrosin kinases, MAPK, and cytoskeleton pathways (AG1478 100 μM, U0126 100 μM, Y27632 100 nM, and (−)-blebbistatin 10 μM; n = 8 each) were assayed. Also, the activation of ERK1/2 and ROCK-I was examined by Western blot assay after treatment with Ap4A and Ap3A (100 μM), with or without suramin, RB-2, U0126, and Y27632. The intracellular distribution of pERK and ROCK-I was examined in the presence of Ap4A or Ap3A (100 μM) with U0126 and Y27632 (100 nM). Results. In the presence of Ap4A, U0126, Y27632, AG1478, and (−)-blebbistatin, reduced the migration rate compared to the effect of Ap4A alone (P < 0.0001, P < 0.001, P < 0.01, and P < 0.1 versus Ap4A, respectively). In the presence of Ap3A 100 μM, U0126 and Y27632 accelerated the migration rate when compared with the effect of Ap3A alone, whereas AG1478 and (−)-blebbistatin (P < 0.0001 versus Ap3A) slowed the migration rate. Western blot assays demonstrated that both dinucleotides activated the ERK1/2 pathway but only Ap4A activated the ROCK-I pathway. The intracellular distribution of pERK1/2 and ROCK-I reflected cross-talk between these two pathways. Conclusions. The activation of the Ap4A/P2Y2 receptor, accelerates corneal epithelial cell migration during wound healing with the activation of MAPK and cytoskeleton pathways, whereas activation of the Ap3A/P2Y6 receptor signals only the MAPK pathway.

Dual Roles of Diadenosine Polyphosphates in Corneal Epithelial Cell Migration

Purpose. To investigate the influence of diadenosine polyphosphates on the rate of corneal epithelial cell migration. Methods. Primary corneal epithelial cell cultures were obtained from New Zealand White rabbits. Immunocytochemical experiments were performed by fixing the cells with 4% paraformaldehyde (PFA) and incubated with cytokeratin 3 primary antibody, which was subsequently incubated with a secondary IgG mouse labeled with FITC, and the cells were observed under confocal microscopy. Migration studies were performed by taking confluent monolayers that were wounded with a pipette tip and challenged with different di- and mononucleotides with or without P2 antagonist (n = 8 each treatment). For concentration–response analysis, compounds were tested in doses ranging from 10−8 to 10−3 M (n = 8). The stability of the dinucleotides was assayed by HPLC, with an isocratic method (n = 4). Results. Cells under study were verified as corneal epithelial cells via the immunocytochemical analysis. Cell migration experiments showed that Ap4A, UTP, and ATP accelerated the rate of healing (5, 2.75, and 3 hours, respectively; P < 0.05; P < 0.001), whereas Ap3A, Ap5A, and UDP delayed it (6.5, 10, and 2 hours, respectively; P < 0.05). ADP did not modify the rate of migration. Antagonists demonstrated that Ap4A and Ap3A did activate different P2Y receptors mediating corneal wound-healing acceleration and delay. Concerning the possible degradation of the dinucleotides, it was almost impossible to detect any products resulting from their cleavage. Conclusions. Based on the pharmacological profile of all the compounds tested, the two main P2Y receptors that exist in these corneal cells are a P2Y2 receptor accelerating the rate of healing and a P2Y6 receptor that delays this process.

Role of phospholipase A(2) and tyrosine kinase in Clostridium difficile toxin A-induced disruption of epithelial integrity, histologic inflammatory damage and intestinal secretion

Clostridium difficile-associated disease causes diarrhea to fulminant colitis and death. We investigated the role of phospholipase A(2) (PLA(2)) inhibitors, aristolochic acid (AA), bromophenacyl bromide BPB and quinacrine (QUIN) on the C. difficile toxin A-induced disruption of epithelial integrity, histologic inflammatory damage and intestinal secretion. Toxin A caused severe hemorrhagic and inflammatory fluid secretion at 6-8 h in rabbit ileal segments, an effect that was significantly inhibited by QUIN (71%, P < 0.01), AA (87%, P < 0.0001) or by BPB (51%, P < 0.01). The secretory effect of toxin A was also inhibited in segments adjacent to those with AA (89%, P < 0.01). Furthermore, QUIN or AA substantially reduced the histologic damage seen after 6-8 h in rabbit ileal segments. The cyclooxygenase inhibitor, indomethacin, also significantly inhibited (96%; n = 6) the secretory effects of toxin A in ligated rabbit intestinal segments. The destruction by toxin A of F-actin at the light junctions of T-84 cell monolayers was not inhibited by AA or BPB. AA or QUIN had no effect on the T-84 cell tissue resistance reduction over 8-24 h after toxin A exposure. All the inhibitors were shown to be effective in the doses administered direct in ileal loops to inhibit PLA(2) activity. The data suggest that PLA(2) is involved in the major pathway of toxin A-induced histologic inflammatory damage and hemorrhagic fluid secretion. Cop. right (C) 2008 John Wiley & Sons, Ltd.

SERR spectroelectrochemical study of cytochrome cd1 nitrite reductase co-immobilized with physiological redox partner cytochrome c552 on biocompatible metal electrodes

© 2015 Silveira et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces

Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of the molecules on the LSMO surface induces a reduction of the Mn oxidation state. Ultraviolet photoelectron spectroscopy measurements also show that the LSMO work function can be modified by surface dipoles opening the door to both tune the charge and spin injection efficiencies in organic devices such as organic light-emitting diodes.

PROLINE-BASED CHIRAL STATIONARY PHASES: INSIGHTS INTO THE MECHANISM OF CHIRAL SELECTIVITY

Proline (Pro) is a unique amino acid that has been examined previously as a potential chiral selector for high-performance liquid chromatography. In recent years, a new class of promising Pro based enantioselective stationary phases has been studied and the longer peptides were found to be competitive with commercial chiral stationary phases (CSPs). Here, we aim to perform a comprehensive examination of a t-butoxycarbonyl- (t-Boc-) terminated monoproline selector. This selector was grafted through an amide linkage to an aminopropyl siloxane-terminated Si (111) wafer and to a silicon atomic force microscopy tip. To ensure a flat, homogeneous overlayer of selectors suitable for force spectrometric measurements, the prepared surfaces were characterized using XPS, AFM and contact angle measurements. Chemical force spectrometry (CFS) has been used to examine the chiral discrimination in our monoproline CSP by measuring the interaction forces between two D- or L-monoproline monolayers in water and in the presence of a series of amino acids in solution to explore the degree to which binding of amino acids impacts self-selectivity. Chemical force titration (CFT) has been used to observe the influence of variations in pH on the binding interaction of proline modified chiral surfaces. Here we aim to explore the connection between side-chain hydrophobicity and differences in the nature of the binding between different ionic forms of amino acids and the t-Boc-Pro interface, and thereby to gain insight into the mechanism of chiral selectivity. The CFS results show several trends for different proline selector/amino acid combinations and indicate that the binding characteristics of amino acid to the proline surface is strongly dependent on the amino acid side chain where hydrophilic side chain amino acids exhibit a selectivity opposite to that seen for those with hydrophobic side chains. The CFT studies also provide valuable insights into interactions between the proline selector and the amino acids under a wide range of pH conditions, indicating that protonated amine groups of alanine and serine are closely involved in the binding mechanism to proline surfaces. On the other hand, the presence of the second carboxylic group in aspartic acid plays an important role while interacting with proline.