996 resultados para Homogenization temperature


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High resolution synchrotron X-ray diffraction, dielectric and Raman scattering study of a scheelite compound Li0.5Ce0.5MoO4 (LCM) revealed that it transforms to a self similar structure above 400 degrees C. The thermally induced isostructural phase transition (IPT), a phenomenon which has rarely been reported in the literature, is preceded by partial softening of the zone centre phonons followed by their hardening above the IPT transition temperature. The high temperature isostructural phase, which exhibits expanded lattice parameters and cell volume, nucleates and grows in the low temperature matrix over a very wide temperature range. Both the phases show nearly identical thermal expansion suggesting similarities in symmetry, unaltered coordination environments around the atoms across the transition.

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Highly stable, branched gold nanoworms are formed spontaneously in an acetamide-based room temperature molten solvent without any additional external stabilizing or aggregating agent. The nanoworms can be anchored onto solid substrates such as indium tin oxide (ITO) without any change in morphology. The anchored nanoworms are explored as substrates for surface enhanced Raman scattering (SERS) studies using non-fluorescent 4-mercaptobenzoic acid (4-MBA) and fluorescent rhodamine 6G (R6G) as probe molecules. The anchored nanostructured particles respond to near IR (1064 nm) as well as visible (785, 632.8 and 514 nm) excitation lasers and yield good surface enhancement in Raman signals. Enhancement factors of the order 10(6)-10(7) are determined for the analytes using a 1064 nm excitation source. Minimum detection limits based on adsorption from ethanolic solutions of 1028 M 4-MBA and aqueous solutions of 1027 M R6G are achieved. Experimental Raman frequencies and frequencies estimated by DFT calculations are in fairly good agreement. SERS imaging of the nanostructures suggests that the substrates comprising of three dimensional, highly interlinked particles are more suited than particles fused in one dimension. The high SERS activity of the branched nanoworms may be attributed to both electromagnetic and charge transfer effects.

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The emergence of low temperature glassy phase in widely known itinerant ferromagnet SrRuO3 is remotely understood. In order to understand this aspect, we have undertaken a detailed temperature dependent (5-250 K) neutron diffraction study. We observe a freezing of the octahedral tilt near the ferromagnetic transition and an unusual deviation in the octahedral tilt near the onset of low temperature spin glass like phase. A reduction of the ordered magnetic moment and a decline in the total integrated magnetic intensity is observed around the temperature where the glassy behaviour starts to appear. The magnetotransport study also reveals the possibility for an additional magnetic ordering by demonstrating a peak in magnetoresistance at the low temperature side as well. The neutron diffraction study presented here provides useful information to understand the observed unusual low temperature magnetic phenomena in SrRuO3.

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In this article we have demonstrated the influence of growth-temperature on the morphology and orientation of SnS films deposited by thermal evaporation technique. While increasing the growth-temperature, the morphology of SnS films changed from flakes-like nanocrystals to regular cubes, whereas their orientation shifted from <111> to <040> direction. The chemical composition of SnS films gradually changed from sulfur-rich to tin-rich with the increase of growth-temperature. The structural analyzes reveal that the crystal structure of SnS films probably changes from orthorhombic to tetragonal at the growth-temperature of about 410 degrees C. Raman studies show that SnS films grown at all temperatures consist of purely SnS phase, whereas the optical studies reveal that the direct optical bandgap of SnS films decreased with the increase of growth-temperature. From these results it has been emphasized that the morphology and orientation along with electrical and optical properties of nearly stoichiometric SnS films strongly depend on their growth-temperature.

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The pressure dependences of Cl-35 nuclear quadrupole resonance (NQR) frequency, temperature and pressure variation of spin lattice relaxation time (T-1) were investigated in 3,4-dichlorophenol. T-1 was measured in the temperature range 77-300 K. Furthermore, the NQR frequency and T-1 for these compounds were measured as a function of pressure up to 5 kbar at 300 K. The temperature dependence of the average torsional lifetimes of the molecules and the transition probabilities W-1 and W-2 for the Delta m = +/- 1 and Delta m = +/- 2 transitions were also obtained. A nonlinear variation of NQR frequency with pressure has been observed and the pressure coefficients were observed to be positive. A thermodynamic analysis of the data was carried out to determine the constant volume temperature coefficients of the NQR frequency. An attempt is made to compare the torsional frequencies evaluated from NQR data with those obtained by IR spectra. On selecting the appropriate mode from IR spectra, a good agreement with torsional frequency obtained from NQR data is observed. The previously mentioned approach is a good illustration of the supplementary nature of the data from IR studies, in relation to NQR studies of compounds in solid state.

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Anelastic and viscoplastic characteristics of Cu50Zr50 and Cu65Zr35 binary bulk metallic glasses at room temperature were examined through nanoindentation creep experiments. Results show that both the deformations are relatively more pronounced in Cu50Zr50 than in Cu65Zr35, and their amount increases with the loading rate. The results are analyzed in terms of the influences of structural defects and loading rate on the room temperature indentation creep.

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This research article describes the large scale fabrication of ZnO nanorods of various shapes on Si(100) substrate, by using metalorganic precursor of Zn in solutions with microwave as the source of energy. This is a low temperature, environmental friendly and rapid thin film deposition process, where ZnO nanorods (1-3 mu m length) were grown only in 1-5 min of microwave irradiation. All as-synthesized nanorods are of single crystalline grown along the < 0001 > crystallographic direction. The coated nanorods were found to be highly dense having a thickness of similar to 1-3 mu m over the entire area 20 mm x 20 mm of the substrate. The ZnO thin film comprising of nanorods exhibits good adhesion with the substrate. A possible mechanism for the initial nucleation and growth of ZnO is discussed. A cross over from a strong visible light emission to an enhanced UV emission is observed, when the nature of the surfactants are varied from polymeric to ionic and nonionic. The position of the chromaticity coordinates in yellow region of the color space gives an impression of white light generation from these coatings by exciting with a blue laser.

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The plastic deformation behavior and dynamic recrystallization (DRX) in homogenized AZ31 Mg alloy was investigated in uniaxial compression in the temperature range between 150 and 400 degrees C with strain rates ranging from 10(-3) to 10(2) s(-1). Twinning was found to contribute significantly during the early stages of deformation. The onset of twinning was examined in detail by recourse to the examination of the appearance of first local maxima before peak strain in the stress-strain responses and the second derivative of stress with strain. High strain hardening rate was observed immediately after the onset of twinning and was found to increase with the Zener-Hollomon parameter. DRX was observed at temperatures above 250 degrees C whereas deformation at lower temperatures (< 250 degrees C) leads to extensive twinning at all the strain rates. At intermediate temperatures of 250-300 degrees C, plastic strains tend to localize near grain/twin boundaries, confining DRX only to these regions. Increase in the temperature promotes non-basal slip, which, in turn, leads to uniform deformation; DRX too becomes uniform. Deformation behavior in three different regimes of temperature is discussed. The dependence of critical stress for the onset of DRX and peak flow stress on temperature and strain rate are also described. (C) 2013 Elsevier B.V. All rights reserved.

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The sensing of carbon dioxide (CO2) at room temperature, which has potential applications in environmental monitoring, healthcare, mining, biotechnology, food industry, etc., is a challenge for the scientific community due to the relative inertness of CO2. Here, we propose a novel gas sensor based on clad-etched Fiber Bragg Grating (FBG) with polyallylamine-amino-carbon nanotube coated on the surface of the core for detecting the concentrations of CO2 gas at room temperature, in ppm levels over a wide range (1000 ppm-4000 ppm). The limit of detection observed in polyallylamine-amino-carbon nanotube coated core-FBG has been found to be about 75 ppm. In this approach, when CO2 gas molecules interact with the polyallylamine-amino-carbon nanotube coated FBG, the effective refractive index of the fiber core changes, resulting in a shift in Bragg wavelength. The experimental data show a linear response of Bragg wavelength shift for increase in concentration of CO2 gas. Besides being reproducible and repeatable, the technique is fast, compact, and highly sensitive. (C) 2013 AIP Publishing LLC.

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Instrumented microindentation (IM) on two Ni-Ti shape memory alloys (SMAs), where one is austenitic and the other is martensitic at room temperature, were conducted from 40 to 150 degrees C. Results show that the depth and work recovery ratios, eta(d) and eta(w) respectively, are complementary to each other. While eta(d) decreases gradually with temperature for austenite, it drops markedly for the martensite in the martensite-to-austenite transformation regime. These results affirm the utility of IM for characterizing SMAs.

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We determine the nature of coupled phonons in mixed crystal of Cs-0.9(NH4)(0.1)H2AsO4 using inelastic light scattering studies in the temperature range of 5 K to 300 K covering a spectral range of 60-1100 cm(-1). The phase transition in this system are marked by the splitting of phonon modes, appearance of new modes and anomalies in the frequency as well as linewidth of the phonon modes near transition temperature. In particular, we observed the splitting of symmetric (v(1)) and antisymmetric (v(3)) stretching vibrations associated with AsO4 tetrahedra below transition temperature (T-c(*) similar to 110 K) attributed to the lowering of site symmetry of AsO4 in orthorhombic phase below transition temperature. In addition, the step-up (hardening) and step-down (softening) of the AsO4 bending vibrations (v(4) (S9, S11) and v(2) (S6)) below transition temperature signals the rapid development of long range ferroelectric order and proton ordering. The lowest frequency phonon (S1) mode observed at similar to 92 cm(-1) shows anomalous blue shift (similar to 12 %) from 300 K to 5 K with no sharp transition near T-c(*) unlike other observed phonon modes signaling its potential coupling with the proton tunneling mode. (C) 2013 Author(s).

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We report an environment friendly and green approach to obtain few-layer graphene by the almost instantaneous reduction of graphene oxide using Mg ribbons in acidic solution with a hydrogen spillover mechanism. The typical time is 1-5 min, which is much faster than the reduction by other metal catalysts.

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In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.

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In this paper, we analyze the combined effects of size quantization and device temperature variations (T = 50K to 400 K) on the intrinsic carrier concentration (n(i)), electron concentration (n) and thereby on the threshold voltage (V-th) for thin silicon film (t(si) = 1 nm to 10 nm) based fully-depleted Double-Gate Silicon-on-Insulator MOSFETs. The threshold voltage (V-th) is defined as the gate voltage (V-g) at which the potential at the center of the channel (Phi(c)) begins to saturate (Phi(c) = Phi(c(sat))). It is shown that in the strong quantum confinement regime (t(si) <= 3nm), the effects of size quantization far over-ride the effects of temperature variations on the total change in band-gap (Delta E-g(eff)), intrinsic carrier concentration (n(i)), electron concentration (n), Phi(c(sat)) and the threshold voltage (V-th). On the other hand, for t(si) >= 4 nm, it is shown that size quantization effects recede with increasing t(si), while the effects of temperature variations become increasingly significant. Through detailed analysis, a physical model for the threshold voltage is presented both for the undoped and doped cases valid over a wide-range of device temperatures, silicon film thicknesses and substrate doping densities. Both in the undoped and doped cases, it is shown that the threshold voltage strongly depends on the channel charge density and that it is independent of incomplete ionization effects, at lower device temperatures. The results are compared with the published work available in literature, and it is shown that the present approach incorporates quantization and temperature effects over the entire temperature range. We also present an analytical model for V-th as a function of device temperature (T). (C) 2013 AIP Publishing LLC.

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A simple approach for obtaining room temperature ferroelectricity in ZnO rod structures at the nanoscale is reported. A systematic comparative study between two kinds of nanorods prepared by different processes reveals the physics behind it. It is observed that ZnO nanorods grown (in-situ) by a sol gel method on platinum substrate show ferroelectric behaviour. On the contrary, ZnO nanorods first grown by a sol gel method and then spin-coated on a platinum substrate (ex-situ) do not demonstrate this kind of feature. X-ray diffraction analysis confirms partially (002) and (100) plane oriented growth of both samples. From photoluminescence (PL) spectral analysis it is interpreted that oxygen vacancies/zinc interstitial defects, which arises from the large lattice mismatch between the Pt substrate and the ZnO nanorods grown thereon, and preferential ZnO growth along 002], can be causes of this type of phenomena. C-V characterization, P-E hysteresis loop along with piezoelectric force microscopy support this observation.