Effect of polymer concentration on stabilized large-tilt-angle flexoelectro-optic switching

In this letter, the uniform lying helix (ULH) liquid crystal texture, required for the flexoelectro-optic effect, is polymer stabilized by the addition of a small percentage of reactive mesogen to a high-tilt-angle (φ>60°) bimesogenic chiral nematic host. The electro-optic response is measured for a range of reactive mesogen concentration mixtures, and compared to the large-tilt-angle switch of the pure chiral nematic mixture. The optimum concentration of reactive mesogen, which is found to provide ample stabilization of the texture with minimal impact on the electro-optic response, is found to be approximately 3%. Our results indicate that polymer stabilization of the ULH texture using a very low concentration of reactive mesogen is a reliable way of ruggedizing flexoelectro-optic devices without interfering significantly with the electro-optics of the effect, negating the need for complicated surface alignment patterns or surface-only polymerization. The polymer stabilization is shown to reduce the temperature dependence of the flexoelectro-optic response due to "pinning" of the chiral nematic helical pitch. This is a restriction of the characteristic thermochromic behavior of the chiral nematic. Furthermore, selection of the temperature at which the sample is ultraviolet cured allows the tilt angle to be optimized for the entire chiral nematic temperature range. The response time, however, remains more sensitive to operating temperature than curing temperature. This allows the sample to be cured at low temperature and operated at high temperature, providing simultaneous optimization of these two previously antagonistic performance aspects. © 2006 American Institute of Physics.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Mechanically tunable conjugated polymer distributed feedback lasers

Herein we report a low-threshold organic laser device based on semiconducting poly(9, 9′ -dioctylfluoren-2,7-diyl-alt-benzothiadiazole) (F8BT) encapsulated in a mechanically stretchable polydimethylsiloxane (PDMS) matrix. We take advantage of the natural flexibility of PDMS to alter the periodicity of the distributed feedback grating which in turn tunes the gain wavelength at which the resonant feedback is obtained. This way, we demonstrate that low-threshold lasing [6.1 μJ cm-2 (5.3 nJ)] is maintained over a large stretching range of 0%-7% which translates into a tuning range of about 20 nm. © 2010 American Institute of Physics.

The damage evaluation of rigid particle filled polymer

In this paper, the rigid particle filled polymer is studied in the hope to understand the real damage mechanisms. Two damage parameters were introduced and measured. One is the macro-damage of the materials calculated from the modulus measured, another is micro-damage describing the interfacial debonding or the percentage of the particle debonded from the matrix. The damage rate of the macro damage decreases, while the micro damage increases with the applied stress.

Normally closed microgrippers based on diamond-like carbon/Ni bimorph and diamond-like carbon/metal/polymer trimorph structures

Multi-finger, normally-closed microgrippers made from a bilayer of a metal and diamond-like carbon (DLC) or a trilayer of a polymer, metal and DLC have been analysed, simulated and fabricated. Temperatures of ∼700 K are necessary to open Ni/DLC bimorph structures. Microgrippers made from an SU8/DLC bilayer or SU8/Al/DLC trilayer have also been fabricated, and fully closed microcages with diameters of ∑40 μm have been obtained. Using SU8 reduces the opening temperature of these devices to only ∼400 K.

Deformation and Failure of Polymer Bonded Explosives under Diametric Compression Test

The tensile deformation and failure of polymer bonded explosives (PBXs), a particulate composite, is studied in this paper. Two HMX-based PBXs with different binder were selected for study. A diametric compression test, in which a disc-shaped specimen is loaded diametrically, was chosen to generate tensile failure in the materials. The quasi-static tensile properties and the tensile creep properties were studied by using conventional displacement transducers to measure the lateral strain along the horizontal diameter. The whole-field in-plane creep deformation was measured by using the technique of high resolution moire´ interferometry. Real time microscopic examination was conducted to monitor the process of deformation and failure of PBXs by using a scanning electron microscope equipped with a loading stage. A manifold method (MM) was used to simulate the deformation and failure of PBX samples under the diametric compression test, including the crack initiation, crack propagation and final cleavage fracture. The mechanisms of deformation and failure of PBXs under diametric compression were analyzed. The diametric compression test and the techniques developed in this research have proven to be applicable to the study of tensile properties of PBXs.

Electron microscopy of polymer-carbon nanotubes composites

Characterization of polymer nanocomposites by electron microscopy has been attempted since last decade. Main drives for this effort were analysis of dispersion and alignment of fillers in the matrix. Sample preparation, imaging modes and irradiation conditions became particularly challenging due to the small dimension of the fillers and also to the mechanical and conductive differences between filler and matrix. To date, no standardized dispersion and alignment process or characterization procedures exist in the trade. Review of current state of the art on characterization of polymer nanocomposites suggests that the most innovative electron and ion beam microscopy has not yet been deployed in this material system. Additionally, recently discovered functionalities of these composites, such as electro and photoactuation are amenable to the investigation of the atomistic phenomena by in situ transmission electron microscopy. The possibility of using innovative thinning techniques is presented. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Tailoring the electrical properties of carbon nanotube-polymer composites

Advances in functionality and reliability of nanocomposite materials require careful formulation of processing methods to ultimately realize the desired properties. An extensive study of how the variation in fabrication process would affect the mechanism of conductivity and thus the final electrical properties of the carbon nanotube-polymer composite is presented. Some of the most widely implemented procedures are addressed, such as ultrasonication, melt shear mixing, and addition of surfactants. It is hoped that this study could provide a systematic guide to selecting and designing the downstream processing of carbon nanocomposites. Finally, this guide is used to demonstrate the fabrication and performance of a stretchable (pliable) conductor that can reversibly undergo uniaxial strain of over 100%, and other key applications are discussed. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-colour switching of polymer stabilized chiral nematic liquid crystal devices

We have fabricated a series of polymer stabilized chiral nematic test cells for use as flexoelectro-optic devices. The devices fabricated were based on commercial chiral nematic mixtures which were polymer stabilized so as to enhance the uniformity and stability of the uniform lying helix texture in the cells. During fabrication and test procedures a series of unusual scattering states have been observed within the devices at different viewing angles. The observations made so far indicate that the properties of the scattering state lies somewhere between the focal conic texture and the Grandjean or planar texture and that the devices exhibit both a helical pitch selective reflection and scattering effect. What is even more dramatic is that the wavelength selectivity of the scattering effect can be tuned by an applied field. In addition, we show that it is possible to achieve good uniform lying helix textures from such devices. Moreover, we show that in certain cases the spontaneous alignment of the helix in the plane of the device opens up the possibility of a new mode of switching. Flexoelectric, Redshift, Coloured scattering, Liquid crystal, Polymer-stabilized liquid-crystal;.

Comportamiento mecánico y eléctrico de un gel de silicona empleado en el encapsulamiento de transistores de potencia tipo IGBT

Resumen: Los materiales dieléctricos son ampliamente utilizados en el sector energético, estando a veces sometidos a condiciones de alto estrés eléctrico, mecánico y ambiental en general, que los ponen al borde de procesos y mecanismos de degradación que conllevan a una probable falla futura. Los geles dieléctricos han comenzado a ser ampliamente utilizados en aplicaciones de encapsulamiento de transistores de alta potencia tipo IGBTs (del inglés Insulated Gate Bipolar Transistor), donde se manejan tensiones y corrientes considerables. En la mayoría de los casos, se necesita una protección para evitar descargas en fase gaseosa, ingreso de humedad al circuito y amortiguamiento mecánico para vibraciones. En el presente trabajo caracterizamos con diferentes técnicas aspectos destacables de este tipo de encapsulantes a base de un gel bifásico de silicona. Para observar el proceso de curado se empleó la técnica de espectroscopía de absorción infrarroja (FTIR), junto con la reología oscilatoria desde las propiedades mecánicas. A su vez, esta última, sirvió para comparar información provista por un novedoso concepto que implica observar a estas últimas desde el interior, a partir de la evolución de cavidades gaseosas generadas eléctricamente. Se comprobó que el comportamiento de estas cavidades es sensible a la historia previa del material, es decir, mecanismos de curado y envejecimiento previo.

Piezoelectricity Of Zno Films Prepared By Sol-Gel Method

ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.