Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

High-frequency signal generation using 1550 nm VCSEL subject to two-frequency optical injection

We experimentally investigate high-frequency microwave signal generation using a 1550 nm single-mode VCSEL subject to two-frequency optical injection. We first consider a situation in which the injected signals come from two similar VCSELs. The polarization of the injected light is parallel to that of the injected VCSEL. We obtain that the VCSEL can be locked to one of the injected signals, but the observed microwave signal is originated by beating at the photodetector. In a second situation we consider injected signals that come from two external cavity tunable lasers with a significant increase of the injected power with respect to the VCSEL-by-VCSEL injection case. The polarization of the injected light is orthogonal to that of the free-running slave VCSEL. We show that in this case it is possible to generate a microwave signal inside the VCSEL cavity. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Neighborhood mobility: A Long-Gone Pardigm? Approaching proximity and land use mix using data from home based surveys.

El WCTR es un congreso de reconocido prestigio internacional en el ámbito de la investigación del transporte y aunque las actas publicadas están en formato digital y sin ISSN ni ISBN, lo consideramos lo suficientemente importante como para que se considere en los indicadores. Policies trying to increase walking within urban mobility modal split usually highlight the importance of the functional patterns and the environmental quality of the urban space as major drivers of citizens modal choices. Functional characteristics would be mainly associated to an appropriate mix of land uses within neighbourhoods, whereas environmental quality would be associated to the characteristics of urban spaces. The purpose of this research is threefold: first, to identify relevant proxy indicators, which could characterize pedestrian-friendly land use mix and environmental quality. Second, to assess, for both traits, existing disparities among neighbourhoods in a major metropolitan area. And finally, to explore the association between both indicators and children mobility patterns: according to their built environment, which neighbourhoods have a greater proportion of children and, how is their mobility? Using data from the 2004 household mobility survey in the 128 neighbourhoods of the municipality of Madrid, this paper concludes that potentially favourable conditions at the neighbourhood level seem to have only a modest influence in,mobility patterns , in terms of both, selection of closer destinations and a higher share of walking within modal split. The citys policy choices, with intensive investment in road and public transport infrastructure may explain why short-distance mobility is not as important as it could have been expected in those neighbourhoods with more pedestrian-friendly conditions. The metropolitan transport system is providing mobility conditions, which make far-away destinations attractive to most citizens.

Neighbourhood mobility: a longgone Paradigm? Approaching "proximity" and "land use mix" using data from home-based surveys

Policies trying to increase walking within urban mobility modal split usually highlight the importance of the functional patterns and the environmental quality of the urban space as major drivers of citizens modal choices. Functional characteristics would be mainly associated to an appropriate mix of land uses within neighbourhoods, whereas environmental quality would be associated to the characteristics of urban spaces. The purpose of this research is threefold: first, to identify relevant proxy indicators, which could characterize pedestrian-friendly land use mix and environmental quality. Second, to assess, for both traits, existing disparities among neighbourhoods in a major metropolitan area. And finally, to explore the association between both indicators and children mobility patterns: according to their built environment, which neighbourhoods have a greater proportion of children and, how is their mobility? Using data from the 2004 household mobility survey in the 128 neighbourhoods of the municipality of Madrid, this paper concludes that potentially favourable conditions at the neighbourhood level seem to have only a modest influence in,mobility patterns , in terms of both, selection of closer destinations and a higher share of walking within modal split. The city s policy choices, with intensive investment in road and public transport infrastructure may explain why short-distance mobility is not as important as it could have been expected in those neighbourhoods with more pedestrian-friendly conditions. The metropolitan transport system is providing mobility conditions, which make far-away destinations attractive to most citizens.

Funicularity and equilibrium for high-performance conceptual structural design

Las estructuras que trabajan por forma se caracterizan por la íntima e indisociable relación entre geometría y comportamiento estructural. Por consiguiente, la elección de una apropiada geometría es el paso previo indispensable en el diseño conceptual de dichas estructuras. En esa tarea, la selección de las posibles geometrías antifuniculares para las distribuciones de cargas permanentes más habituales son más bien limitadas y, muchas veces, son criterios no estructurales (adaptabilidad funcional, estética, proceso constructivo, etc.) los que no permiten la utilización de dichas geometrías que garantizarían el máximo aprovechamiento del material. En este contexto, esta tesis estudia la posibilidad de obtener una estructura sin momentos flectores incluso si la geometría no es antifunicular para sus cargas permanentes. En efecto, esta tesis presenta un procedimiento, basado en la estática gráfica, que demuestra cómo un conjunto de cargas adicionales, introducidas a través de un sistema de pretensado exterior con elementos post-tesos, puede eliminar los momentos flectores debidos a cargas permanentes en cualquier geometría plana. Esto se traduce en una estructura antifunicular que proporciona respuestas innovadoras a demandas conjuntas de versatilidad arquitectónica y optimización del material. Dicha metodología gráfica ha sido implementada en un software distribuido libremente (EXOEQUILIBRIUM), donde el análisis estructural y la variación geométrica están incluidos en el mismo entorno interactivo y paramétrico. La utilización de estas herramientas permite más versatilidad en la búsqueda de nuevas formas eficientes, lo cual tiene gran importancia en el diseño conceptual de estructuras, liberando al ingeniero de la limitación del propio cálculo y de la incomprensión del comportamiento estructural, facilitando extraordinariamente el hecho creativo a la luz de una metodología de este estilo. Esta tesis incluye la aplicación de estos procedimientos a estructuras de cualquier geometría y distribución inicial de cargas, así como el estudio de diferentes posibles criterios de diseño para optimizar la posición del sistema de post-tesado. Además, la metodología ha sido empleada en el proyecto de maquetas a escala reducida y en la construcción de un pabellón hecho enteramente de cartón, lo que ha permitido obtener una validación física del procedimiento desarrollado. En definitiva, esta tesis expande de manera relevante el rango de posibles geometrías antifuniculares y abre enormes posibilidades para el diseño de estructuras que combinan eficiencia estructural y flexibilidad arquitectónica.Curved structures are characterized by the critical relationship between their geometry and structural behaviour, and selecting an appropriate shape in the conceptual design of such structures is important for achieving materialefficiency. However, the set of bending-free geometries are limited and, often, non-structural design criteria (e.g., usability, architectural needs, aesthetics) prohibit the selection of purely funicular or antifunicular shapes. In response to this issue, this thesis studies the possibility of achieving an axial-only behaviour even if the geometry departs from the ideally bending-free shape. This dissertation presents a new design approach, based on graphic statics that shows how bending moments in a two-dimensional geometry can be eliminated by adding forces through an external post-tensioning system. This results in bending-free structures that provide innovative answers to combined demands on versatility and material optimization. The graphical procedure has been implemented in a free-downloadable design-driven software (EXOEQUILIBRIUM) where structural performance evaluations and geometric variation are embedded within an interactive and parametric working environment. This provides greater versatility in finding new efficient structural configurations during the first design stages, bridging the gap between architectural shaping and structural analysis. The thesis includes the application of the developed graphical procedure to shapes with random curvature and distribution of loads. Furthermore, the effect of different design criteria on the internal force distribution has been analyzed. Finally, the construction of reduced- and large-scale models provides further physical validation of the method and insights about the structural behaviour of these structures. In summary, this work strongly expands the range of possible forms that exhibit a bending-free behaviour and, de facto, opens up new possibilities for designs that combine high-performing solutions with architectural freedom.

IMGT, the international ImMunoGeneTics database

IMGT, the international ImMunoGeneTics database, freely available at http://imgt.cines.fr:8104, was created in 1989 at the Université Montpellier II, CNRS, Mont­pellier, France, and is a high quality integrated information system specialising in immunoglobulins, T cell receptors and major histocompatibility complex molecules of human and other vertebrates. IMGT provides researchers and clinicians with a common access to all nucleotide, protein, genetic and structural immunogenetics data. This information is of high value for medical and veterinary research, biotechnology related to antibody and T cell receptor engineering, genome diversity and evolution studies of the immune response.