10-Gbit/s transmission over 300-m standard multimode fiber using multilevel coding and 2-channel WDM

A combination of multilevel coding schemes and simple two-channel wavelength division multiplexing (WDM) at 1300 and 1550 nm was used to transmit an aggregate of 10 Gbit/s over 300 m of multimode fiber that is typical of that employed in current Local Area Networks (LANs). It was shown that this technique could be a simple solution for achieving 10 Gigabit ethernet links over installed multimode fiber building backbones.

Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

Utilization of the fish waste self-brine of fish curing industry as farm fertilizer

Large quantities of self-brine accumulating in curing tanks during the process of commercial fish salting is mostly wasted at present. This liquor exuded from the fish during the process of salting contains considerable amounts of soluble proteins and minerals. Due to the presence of organic matter the self-brine quickly putrefies causing nauseating smell. This renders the whole surroundings insanitary and often leads to health hazards to neighboring localities. Any economic method of utilising this waste brine and converting it into some useful product will be a tangible help to the fish curing industry. Hence, a method is given for converting this waste self-brine into a cheap and efficient fertilizer.

High velocity vortex channeling in vicinal YBCO thin films

We report on electrical transport measurements at high current densities on optimally doped YBa 2Cu 3O 7-δ thin films grown on vicinal SrTiO 3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm -2) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects. © 2012 Elsevier B.V. All rights reserved.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

Self-similar breakup of near-inviscid liquids

The final stages of pinchoff and breakup of dripping droplets of near-inviscid Newtonian fluids are studied experimentally for pure water and ethanol. High-speed imaging and image analysis are used to determine the angle and the minimum neck size of the cone-shaped extrema of the ligaments attached to dripping droplets in the final microseconds before pinchoff. The angle is shown to steadily approach the value of 18.0 ±0.4, independently of the initial flow conditions or the type of breakup. The filament thins and necks following a τ2 /3 law in terms of the time remaining until pinchoff, regardless of the initial conditions. The observed behavior confirms theoretical predictions. © 2012 American Physical Society.

Self-similar breakup of near-inviscid liquids.

The final stages of pinchoff and breakup of dripping droplets of near-inviscid Newtonian fluids are studied experimentally for pure water and ethanol. High-speed imaging and image analysis are used to determine the angle and the minimum neck size of the cone-shaped extrema of the ligaments attached to dripping droplets in the final microseconds before pinchoff. The angle is shown to steadily approach the value of 18.0 ± 0.4°, independently of the initial flow conditions or the type of breakup. The filament thins and necks following a τ(2/3) law in terms of the time remaining until pinchoff, regardless of the initial conditions. The observed behavior confirms theoretical predictions.

Self-regulating casing treatment for axial compressor stability enhancement

The operating range of an axial compressor is often restricted by a safety imposed stall margin. One possible way of regaining operating range is with the application of casing treatment. Of particular interest here is the type of casing treatment which extracts air from a high pressure location in the compressor and re-injects it through discrete loops into the rotor tip region. Existing re-circulation systems have the disadvantage of reducing compressor efficiency at design conditions because worked flow is unnecessarily re-circulated at these operating conditions. Re-circulation is really only needed near stall. This paper proposes a self-regulating casing treatment in which the re-circulated flow is minimized at compressor design conditions and maximized near stall. The self-regulating capability is achieved by taking advantage of changes which occur in the tip clearance velocity and pressure fields as the compressor is throttled toward stall. In the proof-of-concept work reported here, flow is extracted from the high pressure region over the rotor tips and re-injected just upstream of the same blade row. Parametric studies are reported in which the flow extraction and re-injection ports are optimized for location, shape and orientation. The optimized design is shown to compare favorably with a circumferential groove tested in the same compressor. The relationship between stall inception type and casing treatment effectiveness is also investigated. The self-regulating aspect of the new design works well: stall margin improvements from 2.2 to 6.0% are achieved for just 0.25% total air re-circulated near stall and half that near design conditions. The self-regulating capability is achieved by the selective location and orientation of the extraction hole; a simple model is discussed which predicts the optimum axial location. Copyright © 2011 by ASME.

High power, low-jitter encoded picosecond pulse generation using an rf-locked self-q-switched multicontact GaAs/GaAlAs diode laser

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

Lock-in and quasiperiodicity in a forced hydrodynamically self-excited jet

The ability of hydrodynamically self-excited jets to lock into strong external forcing is well known. Their dynamics before lock-in and the specific bifurcations through which they lock in, however, are less well known. In this experimental study, we acoustically force a low-density jet around its natural global frequency. We examine its response leading up to lock-in and compare this to that of a forced van der Pol oscillator. We find that, when forced at increasing amplitudes, the jet undergoes a sequence of two nonlinear transitions: (i) from periodicity to T{double-struck}2 quasiperiodicity via a torus-birth bifurcation; and then (ii) from T{double-struck}2 quasiperiodicity to 1:1 lock-in via either a saddle-node bifurcation with frequency pulling, if the forcing and natural frequencies are close together, or a torus-death bifurcation without frequency pulling, but with a gradual suppression of the natural mode, if the two frequencies are far apart. We also find that the jet locks in most readily when forced close to its natural frequency, but that the details contain two asymmetries: the jet (i) locks in more readily and (ii) oscillates more strongly when it is forced below its natural frequency than when it is forced above it. Except for the second asymmetry, all of these transitions, bifurcations and dynamics are accurately reproduced by the forced van der Pol oscillator. This shows that this complex (infinite-dimensional) forced self-excited jet can be modelled reasonably well as a simple (three-dimensional) forced self-excited oscillator. This result adds to the growing evidence that open self-excited flows behave essentially like low-dimensional nonlinear dynamical systems. It also strengthens the universality of such flows, raising the possibility that more of them, including some industrially relevant flames, can be similarly modelled. © 2013 Cambridge University Press.

Controlled amine functionality in self-assembled monolayers via the hidden amine route: chemical and electronic tunability.

A synthetic strategy for fabricating a dense amine functionalized self-assembled monolayer (SAM) on hydroxylated surfaces is presented. The assembly steps are monitored by X-ray photoelectron spectroscopy, Fourier transform infrared- attenuated total reflection, atomic force microscopy, variable angle spectroscopic ellipsometry, UV-vis surface spectroscopy, contact angle wettability, and contact potential difference measurements. The method applies alkylbromide-trichlorosilane for the fabrication of the SAM followed by surface transformation of the bromine moiety to amine by a two-step procedure: S(N)2 reaction that introduces the hidden amine, phthalimide, followed by the removal of the protecting group and exposing the free amine. The use of phthalimide moiety in the process enabled monitoring the substitution reaction rate on the surface (by absorption spectroscopy) and showed first-order kinetics. The simplicity of the process, nonharsh reagents, and short reaction time allow the use of such SAMs in molecular nanoelectronics applications, where complete control of the used SAM is needed. The different molecular dipole of each step of the process, which is verified by DFT calculations, supports the use of these SAMs as means to tune the electronic properties of semiconductors and for better synergism between SAMs and standard microelectronics processes and devices.

Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry

We propose a simple method to detect the relative strength of Rashba and Dresselhaus spin-orbit interactions in quantum wells (QWs) without relying on the directional-dependent physical quantities. This method utilizes the two different critical gate voltages that leading to the remarkable signals of SU(2) symmetry, which happens to reflect the intrinsic-structure-inversion asymmetry of the QW. We support our proposal by the numerical calculation of in-plane relaxation times based on the self-consistent eight-band Kane model. We find that the two different critical gate voltages leading to the maximum spin-relaxation times [one effect of the SU(2) symmetry] can simply determine the ratio of the coefficients of Rashba and Dresselhaus terms. Our proposal can also be generalized to extract the relative strengths of the spin-orbit interactions in quantum-wire and quantum-dot structures.

Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling

Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular beam epitaxy system The distribution and topographic images of uncapped dots were studied by atomic force microscope. The statistical result shows that the quantum dots are bimodal distribution. The photoluminescence spectrum results shows that the intensity of small size quantum dots dominated, which may be due to: (1) the state density of large quantum dots lower than that of small quantum dots; (2) the carriers capture rate of large size quantum dots is small relative to that of small ones; (3) there is a large strain barrier between large quantum dots and capping layer, and the large strain is likely to produce the defect and dislocation, resulting in a probability carriers transferring from large quantum dots to small dots that is very small with temperature increasing.

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by atomic force microscopy (AFM). It is found that after 1.2 MLs of InAs deposition, while the QDs with diameters less than the width of the multi-atomic steps are shrinking, the larger QDs are growing. Photoluminescence measurements of the uncapped QDs correspond well to the AFM structure observations of the QDs. We propose that the QDs undergo an anomalous coarsening process with modified growth kinetics resulting from the restrictions of the finite terrace sizes. A comparison between the QDs on the vicinal GaAs (1 0 0) substrates and the QDs on the exact GaAs (1 0 0) further verifies the effect of the multi-atomic steps on the formation of QDs.