Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Raninfall and Slope Characteristics Affecting Soil Erosion on Hillsopes

A soil erosion model including interrill erosion and rill erosion was developed for hillslope. The rainfall and slope characteristics affecting soil erosion on hillslopes was analyzed by simulation. The results show that the slope length and gradient, rainfall intensity and process have varying influence on runoff and soil erosion. The unit discharge of runoff and erosion rate increases with increases in the rainfall intensity and the slope length. The same precipitation but with different rainfall processes may cause different runoff and erosion results. The effect of the slope gradient on runoff and soil erosion can be both positive and negative. There exists a critical slope gradient for runoff and soil erosion.

Numerical Study on the Spatial and Temporal Characteristics of Water Quality in the Taihu Lake of China

Taihu Lake is the third largest fresh water lake in China. With the fast economic development, abundant industrial and agricultural waste water has been discharged into Taihu Lake, causing the eutrophication of the water quality, which greatly affected the water utility. In the past decades, the treatment of Taihu Lake has witnessed limited success. Therefore, it is practically and theoretically significant to study the eutrophication of Taihu Lake. This research has focused on the issue of water quality including the characteristics of spatial and temporal distributions, and the rules of nutrient diffusion in the Taihu lake area. Based on the monitoring data, the basis distribution characteristics of water quality in Taihu Lake are analyzed. Comparing Taihu Lake with other Lakes shows that one important reason for Taihu eutrophication is the long period of water retention. A transporting and diffusing model of Taihu nutrient is developed by combining with the hydrodynamics model. Using the model, the concentration field of the total phosphorus (TP) and the influence of wind-driven current are numerically investigated, which leads to the conclusion that the flow field has a great influence on the spatial and temporal distributions of TP in Taihu Lake. Furthermore, the effect for improving the water quality by the project of water diversion from the Yangtze River to Taihu Lake was analyzed by simulation. The results demonstrate that short-term water diversion cannot improve the water quality of the heavily-polluted Meiliang Bay and the western bank areas of Taihu Lake.

Magnetic and optical properties of cobalt nanowires fabricated in polycarbonate ion-track templates

Submitted by CAS-IR