Germanium contents, Ge/Si ratios, and Sr isotopic composition in deep-sea cherts

Nineteen chert samples from a continuous core of the DSDP (Leg 17, Hole 167) were analysed for Ge; in addition we analysed five samples from other cores. The ages range between Late Jurassic, and Late Eocene. The concentration of Ge changes with age from 0.87 ppm in the oldest samples to 0.23 ppm in the youngest (equivalent to a Ge/Si decrease from 0.00000072 to 0.00000019). The decrease in Ge/Si is well correlated with the 87Sr/86Sr ratio in sea water of the relevant age. The interpretation of this trend may reflect: (a) different levels of Ge/Si in sea water as a result of a different ratio between hydrothermal and riverine input, (b) a diagenetic trend in siliceous sediments, (c) recording (by radiolaria) a transition between a radiolaria dominated ocean (with relatively high Ge/Si ratios in sea water) and diatom domination or (d) a combination of the above.

Frank Willaert, Herman Braet, Thom Mertens y Theo Venckeleer, eds., Medieval Memory. Image and Text , Turnhout: Brepols, Fédération Internationale des Instituts d'Études Médiévales, Textes et Études duMoyen Âge, 27, 2004

Fil: Disalvo, Santiago Aníbal. Universidad Nacional de La Plata. Facultad de Humanidades y Ciencias de la Educación; Argentina.

Frank Willaert, Herman Braet, Thom Mertens y Theo Venckeleer, eds., Medieval Memory. Image and Text , Turnhout: Brepols, Fédération Internationale des Instituts d'Études Médiévales, Textes et Études duMoyen Âge, 27, 2004

Fil: Disalvo, Santiago Aníbal. Universidad Nacional de La Plata. Facultad de Humanidades y Ciencias de la Educación; Argentina.

Frank Willaert, Herman Braet, Thom Mertens y Theo Venckeleer, eds., Medieval Memory. Image and Text , Turnhout: Brepols, Fédération Internationale des Instituts d'Études Médiévales, Textes et Études duMoyen Âge, 27, 2004

Fil: Disalvo, Santiago Aníbal. Universidad Nacional de La Plata. Facultad de Humanidades y Ciencias de la Educación; Argentina.

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Ultra-High Efficiency, High-Concentration PV System Based On Spectral Division Between GaInP/GaInAs/Ge And BPC Silicon Cells

A novel HCPV nonimaging concentrator concept with high concentration (>500×) is presented. It uses the combination of a commercial concentration GaInP∕GaInAs∕Ge 3J cell and a concentration Back‐Point‐Contact (BPC) concentration silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell′s reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free‐form RXI‐type concentrator with a band‐pass filter embedded it, both POE and SOE performing Köhler integration to produce light homogenization. The band‐pass filter sends the IR photons in the 900–1200 nm band to the silicon cell. Computer simulations predict that four‐terminal terminal designs could achieve ∼46% added cell efficiencies using commercial 39% 3J and 26% Si cells. A first proof‐of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ∼ 100× and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J with peak efficiency of 36.9%

Numerical simulation of Ge solar cells using D-AMPS-1D code

A solar cell is a solid state device that converts the energy of sunlight directly into electricity by the photovoltaic effect. When light with photon energies greater than the band gap is absorbed by a semiconductor material, free electrons and free holes are generated by optical excitation in the material. The main characteristic of a photovoltaic device is the presence of internal electric field able to separate the free electrons and holes so they can pass out of the material to the external circuit before they recombine. Numerical simulation of photovoltaic devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. The electrical transport and the optical behavior of the solar cells discussed in this work were studied with the simulation code D-AMPS-1D. This software is an updated version of the one-dimensional (1D) simulation program Analysis of Microelectronic and Photonic Devices (AMPS) that was initially developed at The Penn State University, USA. Structures such as homojunctions, heterojunctions, multijunctions, etc., resulting from stacking layers of different materials can be studied by appropriately selecting characteristic parameters. In this work, examples of cells simulation made with D-AMPS-1D are shown. Particularly, results of Ge photovoltaic devices are presented. The role of the InGaP buffer on the device was studied. Moreover, a comparison of the simulated electrical parameters with experimental results was performed.