913 resultados para facial mask


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Recent development of solution processable organic semiconductors delineates the emergence of a new generation of air-stable, high performance p- and n-type materials. This makes it indeed possible for printed organic complementary circuits (CMOS) to be used in real applications. The main technical bottleneck for organic CMOS to be adopted as the next generation organic integrated circuit is how to deposit and pattern both p- and n-type semiconductor materials with high resolutions at the same time. It represents a significant technical challenge, especially if it can be done for multiple layers without mask alignment. In this paper, we propose a one-step self-aligned fabrication process which allows the deposition and high resolution patterning of functional layers for both p- and n-channel thin film transistors (TFTs) simultaneously. All the dimensional information of the device components is featured on a single imprinting stamp, and the TFT-channel geometry, electrodes with different work functions, p- and n-type semiconductors and effective gate dimensions can all be accurately defined by one-step imprinting and the subsequent pattern transfer process. As an example, we have demonstrated an organic complementary inverter fabricated by 3D imprinting in combination with inkjet printing and the measured electrical characteristics have validated the feasibility of the novel technique. © 2012 Elsevier B.V. All rights reserved.

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Opengazer is an open source application that uses an ordinary webcam to estimate head pose, facial gestures, or the direction of your gaze. This information can then be passed to other applications. For example, used in conjunction with Dasher, opengazer allows you to write with your eyes. Opengazer aims to be a low-cost software alternative to commercial hardware-based eye trackers. The first version of Opengazer was developed by Piotr Zieliński, supported by Samsung and the Gatsby Charitable Foundation. Research and development for Opengazer has been continued by Emli-Mari Nel, and was supported until 2012 by the European Commission in the context of the AEGIS project, and also by the Gatsby Charitable Foundation.

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Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.

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An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

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This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

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Surface texturing has a great potential to improve tribological performance. First, possible texturing methods were identified and classified according to their physical principles. In sequence, some alternative texturing methods are presented. Some of them are already currently used either in industry or in laboratory, and innovations or simplifications are described for them. Others are innovative techniques. Some were explored only tentatively, where basic ideas and simple experimental investigations were developed to check their validity. Others were explored in more detail, so that their practical applicability could be identified. The first texturing method was photochemical texturing using a simple and cheap apparatus. Masking with inkjet printing before chemical etching was also successful to texture metallic samples. A new method involving electrochemical texturing, without the need to previously mask the samples to be textured have been studied in terms of voltage, current, mechanical configuration of the apparatus and electrolyte flushing. Another method aims to generate randomly distributed circular pockets on steel surfaces and involves dispersion of small acid droplets in oil. The final method involves the selective formation of hard areas on a steel surface by locallised diffusion, which should then develop into a texture during wear.

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A Mode Selective Switch based around an LCoS Spatial Light Modulator is demonstrated to optically demultiplex modes with the same propagation constants to the same output fibres, using a common phase mask for all channels. © 2012 IEEE.

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A method of creating micro patterned devices by patterning thin films which are deposited on a substrate. A channel or channels is created on the substrate, the width being of fine enough resolution such that a flowable mask material can be drawn along the channel by capillary forces.

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Perception of peripherally viewed shapes is impaired when surrounded by similar shapes. This phenomenon is commonly referred to as "crowding". Although studied extensively for perception of characters (mainly letters) and, to a lesser extent, for orientation, little is known about whether and how crowding affects perception of other features. Nevertheless, current crowding models suggest that the effect should be rather general and thus not restricted to letters and orientation. Here, we report on a series of experiments investigating crowding in the following elementary feature dimensions: size, hue, and saturation. Crowding effects in these dimensions were benchmarked against those in the orientation domain. Our primary finding is that all features studied show clear signs of crowding. First, identification thresholds increase with decreasing mask spacing. Second, for all tested features, critical spacing appears to be roughly half the viewing eccentricity and independent of stimulus size, a property previously proposed as the hallmark of crowding. Interestingly, although critical spacings are highly comparable, crowding magnitude differs across features: Size crowding is almost as strong as orientation crowding, whereas the effect is much weaker for saturation and hue. We suggest that future theories and models of crowding should be able to accommodate these differences in crowding effects.

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Statistical approaches for building non-rigid deformable models, such as the Active Appearance Model (AAM), have enjoyed great popularity in recent years, but typically require tedious manual annotation of training images. In this paper, a learning based approach for the automatic annotation of visually deformable objects from a single annotated frontal image is presented and demonstrated on the example of automatically annotating face images that can be used for building AAMs for fitting and tracking. This approach employs the idea of initially learning the correspondences between landmarks in a frontal image and a set of training images with a face in arbitrary poses. Using this learner, virtual images of unseen faces at any arbitrary pose for which the learner was trained can be reconstructed by predicting the new landmark locations and warping the texture from the frontal image. View-based AAMs are then built from the virtual images and used for automatically annotating unseen images, including images of different facial expressions, at any random pose within the maximum range spanned by the virtually reconstructed images. The approach is experimentally validated by automatically annotating face images from three different databases. © 2009 IEEE.

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The introduction of new materials and processes to microfabrication has, in large part, enabled many important advances in microsystems, labon- a-chip devices, and their applications. In particular, capabilities for cost-effective fabrication of polymer microstructures were transformed by the advent of soft lithography and other micromolding techniques 1,2, and this led a revolution in applications of microfabrication to biomedical engineering and biology. Nevertheless, it remains challenging to fabricate microstructures with well-defined nanoscale surface textures, and to fabricate arbitrary 3D shapes at the micro-scale. Robustness of master molds and maintenance of shape integrity is especially important to achieve high fidelity replication of complex structures and preserving their nanoscale surface texture. The combination of hierarchical textures, and heterogeneous shapes, is a profound challenge to existing microfabrication methods that largely rely upon top-down etching using fixed mask templates. On the other hand, the bottom-up synthesis of nanostructures such as nanotubes and nanowires can offer new capabilities to microfabrication, in particular by taking advantage of the collective self-organization of nanostructures, and local control of their growth behavior with respect to microfabricated patterns. Our goal is to introduce vertically aligned carbon nanotubes (CNTs), which we refer to as CNT "forests", as a new microfabrication material. We present details of a suite of related methods recently developed by our group: fabrication of CNT forest microstructures by thermal CVD from lithographically patterned catalyst thin films; self-directed elastocapillary densification of CNT microstructures; and replica molding of polymer microstructures using CNT composite master molds. In particular, our work shows that self-directed capillary densification ("capillary forming"), which is performed by condensation of a solvent onto the substrate with CNT microstructures, significantly increases the packing density of CNTs. This process enables directed transformation of vertical CNT microstructures into straight, inclined, and twisted shapes, which have robust mechanical properties exceeding those of typical microfabrication polymers. This in turn enables formation of nanocomposite CNT master molds by capillary-driven infiltration of polymers. The replica structures exhibit the anisotropic nanoscale texture of the aligned CNTs, and can have walls with sub-micron thickness and aspect ratios exceeding 50:1. Integration of CNT microstructures in fabrication offers further opportunity to exploit the electrical and thermal properties of CNTs, and diverse capabilities for chemical and biochemical functionalization 3. © 2012 Journal of Visualized Experiments.

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A Spatial Light Modulator is used to optically demultiplex modal channels on the basis of degenerate propagation constants using a shared phase mask for all channels. This allows groups of modes to be routed to common output fibres eliminating the need for MIMO equalization to transmit 2x56Gb/s QPSK over 2km of OM2 grade 50μm core MMF. © 2012 OSA.

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A Spatial Light Modulator is used to optically demultiplex modal channels on the basis of degenerate propagation constants using a shared phase mask for all channels. This allows groups of modes to be routed to common output fibres eliminating the need for MIMO equalization to transmit 2×56Gb/s QPSK over 2km of OM2 grade 50μm core MMF. © 2012 Optical Society of America.

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A Spatial Light Modulator is used to optically demultiplex modal channels on the basis of degenerate propagation constants using a shared phase mask for all channels. This allows groups of modes to be routed to common output fibres eliminating the need for MIMO equalization to transmit 2x56Gb/s QPSK over 2km of OM2 grade 50μm core MMF. © 2012 OSA.

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A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.