791 resultados para capacitance


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Schottky diodes resulting from an intimate contact of aluminum on electro-deposited poly(3-methylthiopene), PMeT, have been studied by admittance spectroscopy, capacitance-voltage and current-voltage measurements, and optically-induced current transients. The loss-tangents show the existence of interface states that can be removed by vacuum annealing, also visible in the transients. Furthermore, the CV curves don't substantiate the idea of movement of the dopant ions.

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Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.

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Poly(phenylene vinylene) (PPV) grown via the precursor route, deposited on top of heavily doped n-type silicon, was studied using electrical measurement techniques. The results are compared to PPV grown via deposition of soluble derivative (MEH-PPV). The two types are very similar. They have comparable free carrier densities and both show minority-carrier effects. The activation energy found via the loss tangent is 0.13 eV. The effect of exposure to oxygen is visible in the capacitance and the current.

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The present work reports some experimental results on the electrical AC behaviour of metal-undoped diamond Schottky diodes fabricated with a free-standing MPCVD diamond film (5 mum thick). The metals are gold for the ohmic contact and aluminium for the rectifier. The capacitance and loss tangent vs, frequency shows that capacitance presents a relaxation maximum at frequencies near 10 kHz at room temperature. Although the simple model (small equivalent circuit) can justify the values for the relaxation, it cannot justify the departure from the Debye model, also verified in the Cole-Cole plot. Taking into account the existence of traps in the depletion region, a best fit to the experimental results was obtained. The difference between the Fermi level and the band edge of 0.2-0.3 eV is in agreement with the activation energy found from the loss tangent analysis. The capacitance with applied voltage (Mott-Schottky plots) gives a defect density of 10(16) cm(-3) with contact potentials near 0.5 V and the profile of defect density obtained shows a major density (approx. 10(17) cm(-3)) in a layer with a thickness less than 50 nm from the junction, decreasing by one order of magnitude with increasing distance. Finally a structural model is proposed to explain the AC behaviour found. (C) 2001 Elsevier Science B.V. All rights reserved.

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Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.

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Un matériau semi-conducteur utilisé lors de la fabrication d’antennes térahertz (THz), le quaternaire InGaAsP (E_g = 0,79 eV), subit une implantation ionique de Fe suivi d’un recuit thermique rapide (RTA) dans le but d’améliorer ses propriétés d’émission. Le recuit est nécessaire afin de recristalliser la couche amorphisée lors de l’implantation, donnant lieu à un polycristal rempli de défauts de recristallisation. On constate cependant que les matériaux implantés Fe offrent de meilleures performances que ceux simplement endommagés au Ga. Dans le but de départager l’effet des défauts de recristallisation et des impuretés de Fe, des mesures de spectroscopie transitoire des niveaux profonds (DLTS) et de DLTS en courant (I-DLTS), ainsi que de spectrométrie de masse d’ions secondaires par temps de vol (ToF-SIMS) ont été effectuées sur des échantillons non implantés et d’autres recristallisés. Les mesures DLTS et I-DLTS ont pour but de caractériser les niveaux profonds générés par ces deux procédures postcroissance, tout en identifiant le rôle que jouent les impuretés de Fe sur la formation de ces niveaux profonds. De plus, le voisinage des atomes de Fe dans le matériau recristallisé a été étudié à l’aide des mesures ToF-SIMS. Les mesures DLTS sur matériau recristallisé sont peu concluantes, car la mesure de capacité est faussée par la haute résistivité du matériau. Par contre, les mesures I-DLTS sur matériau recristallisé ont permis de conclure que les impuretés de Fe sont responsables de la formation d’une grande variété de niveaux d’énergie se trouvant entre 0,25 et 0,40 eV, alors que les défauts de structure induisent des niveaux de moins de 0,25 eV. La concentration de Fe est élevée par rapport au seuil de solubilité du Fe dans le matériau recristallisé. Il serait donc plausible que des agrégats de Fe se forment. Toutefois, cette hypothèse est infirmée par l'absence de pic aux masses correspondant à la molécule ^(56)Fe_2^+ sur les spectres ToF-SIMS. De plus, un modèle simple est utilisé afin d’estimer si certaines masses présentes sur les spectres ToF-SIMS correspondent à des liaisons non induites par la mesure dans le matériau recristallisé. Bien qu’aucune liaison avec le Ga et l'As n’est détectable, ce modèle n’exclut pas la possibilité de liens préférentiels avec l’In.

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Type 1 diabetes affects over 108,000 children, and this number is steadily increasing. Current insulin therapies help manage the disease but are not a cure. Over a child’s lifetime they can develop kidney disease, blindness, cardiovascular disease and many other issues due to the complications of type 1 diabetes. This autoimmune disease destroys beta cells located in the pancreas, which are used to regulate glucose levels in the body. Because there is no cure and many children are affected by the disease there is a need for alternative therapeutic options that can lead to a cure. Human mesenchymal stem cells (hMSCs) are an important cell source for stem cell therapeutics due to their differentiation capacity, self-renewal, and trophic activity. hMSCs are readily available in the bone marrow, and act as an internal repair system within the body, and they have been shown to differentiate into insulin producing cells. However, after isolation hMSCs are a heterogeneous cell population, which requires secondary processing. To resolve the heterogeneity issue hMSCs are separated using fluorescent- and magnetic-activate cell sorting with antigen labeling. These techniques are efficient but reduce cell viability after separation due to the cell labeling. Therefore, to make hMSCs more readily available for type 1 diabetes therapeutics, they should be separated without diminishing there functional capabilities. Dielectrophoresis is an alternative separation technique that has the capability to separated hMSCs. This dissertation uses dielectrophoresis to characterize the dielectric properties of hMSCs. The goal is to use hMSCs dielectric signature as a separation criteria rather than the antigen labeling implemented with FACS and MACS. DEP has been used to characterize other cell systems, and is a viable separation technique for hMSCs.

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Un matériau semi-conducteur utilisé lors de la fabrication d’antennes térahertz (THz), le quaternaire InGaAsP (E_g = 0,79 eV), subit une implantation ionique de Fe suivi d’un recuit thermique rapide (RTA) dans le but d’améliorer ses propriétés d’émission. Le recuit est nécessaire afin de recristalliser la couche amorphisée lors de l’implantation, donnant lieu à un polycristal rempli de défauts de recristallisation. On constate cependant que les matériaux implantés Fe offrent de meilleures performances que ceux simplement endommagés au Ga. Dans le but de départager l’effet des défauts de recristallisation et des impuretés de Fe, des mesures de spectroscopie transitoire des niveaux profonds (DLTS) et de DLTS en courant (I-DLTS), ainsi que de spectrométrie de masse d’ions secondaires par temps de vol (ToF-SIMS) ont été effectuées sur des échantillons non implantés et d’autres recristallisés. Les mesures DLTS et I-DLTS ont pour but de caractériser les niveaux profonds générés par ces deux procédures postcroissance, tout en identifiant le rôle que jouent les impuretés de Fe sur la formation de ces niveaux profonds. De plus, le voisinage des atomes de Fe dans le matériau recristallisé a été étudié à l’aide des mesures ToF-SIMS. Les mesures DLTS sur matériau recristallisé sont peu concluantes, car la mesure de capacité est faussée par la haute résistivité du matériau. Par contre, les mesures I-DLTS sur matériau recristallisé ont permis de conclure que les impuretés de Fe sont responsables de la formation d’une grande variété de niveaux d’énergie se trouvant entre 0,25 et 0,40 eV, alors que les défauts de structure induisent des niveaux de moins de 0,25 eV. La concentration de Fe est élevée par rapport au seuil de solubilité du Fe dans le matériau recristallisé. Il serait donc plausible que des agrégats de Fe se forment. Toutefois, cette hypothèse est infirmée par l'absence de pic aux masses correspondant à la molécule ^(56)Fe_2^+ sur les spectres ToF-SIMS. De plus, un modèle simple est utilisé afin d’estimer si certaines masses présentes sur les spectres ToF-SIMS correspondent à des liaisons non induites par la mesure dans le matériau recristallisé. Bien qu’aucune liaison avec le Ga et l'As n’est détectable, ce modèle n’exclut pas la possibilité de liens préférentiels avec l’In.

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Manganese oxide is a promising active material for supercapacitors (SCs) with pseudocapacitance due to its high capacitance and its environmentally friendly character. This paper deals with the preparation of electrodes for supercapacitors consisting of manganese oxide supported onto graphite by electrophoretic deposition. Manganese oxide powders were characterized and dispersed in water by controlling the colloidal and rheological behavior in order to obtain stable suspensions. Optimized manganese oxide suspensions were deposited onto graphite electrodes by electrophoretic deposition. The deposited mass per unit area in the electrodes was optimized by controlling the applied current density and the deposition time. It has been demonstrated that the introduction of a binder helped to improve the adherence to graphite; otherwise the deposit thickness obtained by EPD is limited and no films can be obtained by simply dipping. These conditions allowed us to obtain more homogeneous deposits with higher specific energy than without binder.

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Accurate assessment of standing pasture biomass in livestock production systems is a major factor for improving feed planning. Several tools are available to achieve this, including the GrassMaster II capacitance meter. This tool relies on an electrical signal, which is modified by the surrounding pasture. There is limited knowledge on how this capacitance meter performs in Mediterranean pastures. Therefore, we evaluated the GrassMaster II under Mediterranean conditions to determine (i) the effect of pasture moisture content (PMC) on the meter’s ability to estimate pasture green matter (GM) and dry matter (DM) yields, and (ii) the spatial variability and temporal stability of corrected meter readings (CMR) and DM in a bio-diverse pasture. Field tests were carried out with typical pastures of the southern region of Portugal (grasses, legumes, mixture and volunteer annual species) and at different phenological stages (and different PMC). There were significant positive linear relations between CMR and GM (r2 = 0.60, P < 0.01) and CMR and DM (r2 = 0.35, P < 0.05) for all locations (n = 347). Weak relationships were found for PMC (%) v. slope and coefficient of determination for both GM and DM. A significant linear relation existed for CMR v. GM and DM for PMC >80% (r2= 0.57, P < 0.01, RMSE = 2856.7 kg ha–1, CVRMSE=17.1% to GM; and r2= 0.51, P < 0.01,RMSE = 353.7 kg ha–1, CVRMSE = 14.3% to DM). Therefore, under the conditions of this current study there exists an optimum PMC (%) for estimating both GM and DM with the GrassMaster II. Repeated-measurements taken at the same location on different dates and conditions in a bio-diverse pasture showed similar and stable patterns between CMR and DM (r2= 0.67, P < 0.01, RMSE = 136.1 kg ha–1, CVRMSE = 6.5%). The results indicate that the GrassMaster II in-situ technique could play a crucial role in assessing pasture mass to improve feed planning under Mediterranean conditions.

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Site-specific management (SSM) is a form of precision agriculture whereby decisions on resource application and agronomic practices are improved to better match soil and crop requirements as they vary in the field. SSM enables the identification of regions (homogeneous management zones) within the area delimited by field boundaries. These subfield regions constitute areas that have similar permanent characteristics. Traditional soil and pasture sampling and the necessary laboratory analysis are time-consuming, labour-intensive and cost prohibitive, not viable from a SSM perspective because it needs a large number of soil and pasture samples in order to achieve a good representation of soil properties, nutrient levels and pasture quality and productivity. The main objective of this work was to evaluate technologies which have potential for monitoring aspects related to spatial and temporal variability of soil nutrients and pasture green and dry matter yield (respectively, GM and DM, in kg/ha) and support to decision making for the farmer. Three types of sensors were evaluated in a 7ha pasture experimental field: an electromagnetic induction sensor (“DUALEM 1S”, which measures the soil apparent electrical conductivity, ECa), an active optical sensor ("OptRx®", which measures the NDVI, “Normalized Difference Vegetation Index”) and a capacitance probe ("GrassMaster II" which estimates plant mass). The results indicate the possibility of using a soil electrical conductivity probe as, probably, the best tool for monitoring not only some of the characteristics of the soil, but also those of the pasture, which could represent an important help in simplifying the process of sampling and support SSM decision making, in precision agriculture projects. On the other hand, the significant and very strong correlations obtained between capacitance and NDVI and between any of these parameters and the pasture productivity shows the potential of these tools for monitoring the evolution of spatial and temporal patterns of the vegetative growth of biodiverse pasture, for identifying different plant species and variability in pasture yield in Alentejo dry-land farming systems. These results are relevant for the selection of an adequate sensing system for a particular application and open new perspectives for other works that would allow the testing, calibration and validation of the sensors in a wider range of pasture production conditions, namely the extraordinary diversity of botanical species that are characteristic of the Mediterranean region at the different periods of the year.