Polymer microfabrication by scanning based microstereolithography: Optical design and material functionality

Several research groups have attempted to optimize photopolymerization parameters to increase the throughput of scanning based microstereolithography (MSL) systems through modified beam scanning techniques. Efforts in reducing the curing line width have been implemented through high numerical aperture (NA) optical setups. However, the intensity contour symmetry and the depth of field of focus have led to grossly non-vertical and non-uniform curing profiles. This work tries to review the photopolymerization process in a scanning based MSL system from the aspect of material functionality and optical design. The focus has been to exploit the rich potential of photoreactor scanning system in achieving desired fabrication modalities (minimum curing width, uniform depth profile, and vertical curing profile) even with a reduced NA optical setup and a single movable stage. The present study tries to manipulate to its advantage the effect of optimized lower c] (photoinitiator (PI) concentration) in reducing the minimum curing width to similar to 10-20 mu m even with a higher spot size (similar to 21.36 mu m) through a judiciously chosen ``monomer-PI'' system. Optimization on grounds of increasing E-max (maximum laser exposure energy at surface) by optimizing the scan rate provides enough time for the monomer or resin to get cured across the entire resist thickness (surface to substrate similar to 10-100 mu m), leading to uniform depth profiles along the entire scan lengths. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4750975]

Multilevel dodecagonal space-vector generation for induction motor drives by cascading three-level and two-level inverters

This study proposes an inverter circuit topology capable of generating multilevel dodecagonal (12-sided polygon) voltage space vectors by the cascaded connection of two-level and three-level inverters. By the proper selection of DC-link voltages and resultant switching states for the inverters, voltage space vectors whose tips lie on three concentric dodecagons, are obtained. A rectifier circuit for the inverter is also proposed, which significantly improves the power factor. The topology offers advantages such as the complete elimination of the fifth and seventh harmonics in phase voltages and an extension of the linear modulation range. In this study, a simple method for the calculation of pulse width modulation timing was presented along with extensive simulation and experimental results in order to validate the proposed concept.

SEU Tolerant Robust Memory Cell Design

The implementation of semiconductor circuits and systems in nano-technology makes it possible to achieve high speed, lower voltage level and smaller area. The unintended and undesirable result of this scaling is that it makes integrated circuits susceptible to soft errors normally caused by alpha particle or neutron hits. These events of radiation strike resulting into bit upsets referred to as single event upsets(SEU), become increasingly of concern for the reliable circuit operation in the field. Storage elements are worst hit by this phenomenon. As we further scale down, there is greater interest in reliability of the circuits and systems, apart from the performance, power and area aspects. In this paper we propose an improved 12T SEU tolerant SRAM cell design. The proposed SRAM cell is economical in terms of area overhead. It is easy to fabricate as compared to earlier designs. Simulation results show that the proposed cell is highly robust, as it does not flip even for a transient pulse with 62 times the Q(crit) of a standard 6T SRAM cell.

k.p based closed form energy band gap and transport electron effective mass model for 100] and 110] relaxed and strained Silicon nanowire

In this paper, we address a physics based closed form model for the energy band gap (E-g) and the transport electron effective mass in relaxed and strained 100] and 110] oriented rectangular Silicon Nanowire (SiNW). Our proposed analytical model along 100] and 110] directions are based on the k.p formalism of the conduction band energy dispersion relation through an appropriate rotation of the Hamiltonian of the electrons in the bulk crystal along 001] direction followed by the inclusion of a 4 x 4 Luttinger Hamiltonian for the description of the valance band structure. Using this, we demonstrate the variation in Eg and the transport electron effective mass as function of the cross-sectional dimensions in a relaxed 100] and 110] oriented SiNW. The behaviour of these two parameters in 100] oriented SiNW has further been studied with the inclusion of a uniaxial strain along the transport direction and a biaxial strain, which is assumed to be decomposed from a hydrostatic deformation along 001] with the former one. In addition, the energy band gap and the effective mass of a strained 110] oriented SiNW has also been formulated. Using this, we compare our analytical model with that of the extracted data using the nearest neighbour empirical tight binding sp(3)d(5)s* method based simulations and has been found to agree well over a wide range of device dimensions and applied strain. (C) 2012 Elsevier Ltd. All rights reserved.

Enhancing fluorescence signals from aluminium thin films and foils using polyelectrolyte multilayers

In this paper we investigate the application of polyelectrolyte multilayer (PEM) coated metal slides in enhancing fluorescence signal. We observed around eight-fold enhancement in fluorescence for protein incubated on PEM coated on aluminium mirror surface with respect to that of functionalized bare glass slides. The fluorescence intensities were also compared with commercially available FAST (R) slides (Whatman) offering 3D immobilization of proteins and the results were found to be comparable. We also showed that PEM coated on low-cost and commonly available aluminium foils also results in comparable fluorescence enhancement as sputtered aluminium mirrors. Immunoassay was also performed, using model proteins, on aluminium mirror as well as on aluminium foil based devices to confirm the activity of proteins. This work demonstrated the potential of PEMs in the large-scale, roll-to-roll manufacturing of fluorescence enhancements substrates for developing disposable, low-cost devices for fluorescence based diagnostic methods.

Music and symbolic dynamics: the science behind an art

Music signals comprise of atomic notes drawn from a musical scale. The creation of musical sequences often involves splicing the notes in a constrained way resulting in aesthetically appealing patterns. We develop an approach for music signal representation based on symbolic dynamics by translating the lexicographic rules over a musical scale to constraints on a Markov chain. This source representation is useful for machine based music synthesis, in a way, similar to a musician producing original music. In order to mathematically quantify user listening experience, we study the correlation between the max-entropic rate of a musical scale and the subjective aesthetic component. We present our analysis with examples from the south Indian classical music system.

Common-mode voltage eliminated three-level inverter using a three-level flying-capacitor inverter and cascaded H-bridge

This paper proposes a new 3 level common mode voltage eliminated inverter using an inverter structure formed by cascading a H-Bridge with a three-level flying capacitor inverter. The three phase space vector polygon formed by this configuration and the polygon formed by the common-mode eliminated states have been discussed. The entire system is simulated in Simulink and the results are experimentally verified. This system has an advantage that if one of devices in the H-Bridge fails, the system can still be operated as a normal 3 level inverter mode at full power. This inverter has many advantages like use of single DC-supply, making it possible for a back to back grid-tied converter application, improved reliability etc.

Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet

In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.

Joint Self-Iterating Equalization and Detection for Two-Dimensional Intersymbol-Interference Channels

We develop several novel signal detection algorithms for two-dimensional intersymbol-interference channels. The contribution of the paper is two-fold: (1) We extend the one-dimensional maximum a-posteriori (MAP) detection algorithm to operate over multiple rows and columns in an iterative manner. We study the performance vs. complexity trade-offs for various algorithmic options ranging from single row/column non-iterative detection to a multi-row/column iterative scheme and analyze the performance of the algorithm. (2) We develop a self-iterating 2-D linear minimum mean-squared based equalizer by extending the 1-D linear equalizer framework, and present an analysis of the algorithm. The iterative multi-row/column detector and the self-iterating equalizer are further connected together within a turbo framework. We analyze the combined 2-D iterative equalization and detection engine through analysis and simulations. The performance of the overall equalizer and detector is near MAP estimate with tractable complexity, and beats the Marrow Wolf detector by about at least 0.8 dB over certain 2-D ISI channels. The coded performance indicates about 8 dB of significant SNR gain over the uncoded 2-D equalizer-detector system.

Modeling and analysis of MOS capacitor controlled by independent double gates

This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By numerical simulation it is shown how the quasi-static and non-quasi-static characteristics of the first gate capacitance could be tuned by the second gate biases. Effect of body doping and energy quantization are also discussed in this regard. A semi-empirical quasi-static model is also developed by using the existing incomplete Poisson solution of independent double gate transistors. Proposed model, which is valid from accumulation to inversion, is shown to have excellent agreement with numerical simulation for practical bias conditions.

Negative differential resistance and effect of defects and deformations in MoS2 armchair nanoribbon metal-oxide-semiconductor field effect transistor

In this work, we present a study on the negative differential resistance (NDR) behavior and the impact of various deformations (like ripple, twist, wrap) and defects like vacancies and edge roughness on the electronic properties of short-channel MoS2 armchair nanoribbon MOSFETs. The effect of deformation (3 degrees-7 degrees twist or wrap and 0.3-0.7 angstrom ripple amplitude) and defects on a 10 nm MoS2 ANR FET is evaluated by the density functional tight binding theory and the non-equilibrium Green's function approach. We study the channel density of states, transmission spectra, and the I-D-V-D characteristics of such devices under the varying conditions, with focus on the NDR behavior. Our results show significant change in the NDR peak to valley ratio and the NDR window with such minor intrinsic deformations, especially with the ripple. (C) 2013 AIP Publishing LLC.

A Three-Level Common-Mode Voltage Eliminated Inverter With Single DC Supply Using Flying Capacitor Inverter and Cascaded H-Bridge

A three-level common-mode voltage eliminated inverter with single dc supply using flying capacitor inverter and cascaded H-bridge has been proposed in this paper. The three phase space vector polygon formed by this configuration and the polygon formed by the common-mode eliminated states have been discussed. The entire system is simulated in Simulink and the results are experimentally verified. This system has an advantage that if one of devices in the H-bridge fails, the system can still be operated as a normal three-level inverter at full power. This inverter has many other advantages like use of single dc supply, making it possible for a back-to-back grid-tied converter application, improved reliability, etc.

A Reduced Device-Count Hybrid Multilevel Inverter Topology with single DC Source and Improved Fault Tolerance

A new hybrid multilevel power converter topology is presented in this paper. The proposed power converter topology uses only one DC source and floating capacitors charged to asymmetrical voltage levels, are used for generating different voltage levels. The SVPWM based control strategy used in this converter maintains the capacitor voltages at the required levels in the entire modulation range including the over-modulation region. For the voltage levels: nine and above, the number of components required in the proposed topology is significantly lower, compared to the conventional multilevel inverter topologies. The number of capacitors required in this topology reduces drastically compared to the conventional flying capacitor topology, when the number of levels in the inverter output increases. This topology has better fault tolerance, as it is capable of operating with reduced number of levels, in the entire modulation range, in the event of any failure in the H-bridges. The transient as well as the steady state performance of the nine-level version of the proposed topology is experimentally verified in the entire modulation range including the over-modulation region.