813 resultados para SILICON ALLOYS
Resumo:
Nowadays, one of the main objectives that affects the development of any new product is the respect for the environment. Until the late 80's, the development and manufacture of the most of the product were aimed to achieve maximum quality in time and costs with environmental issues relegated to secondary importance. On the other hand, in the 90's, the pressure from factors such as markets, financial and legislative factors, led to environmental considerations being taken into account. In this context, the current aeronautical industry strategies are based on the search for economic, environmental and energy efficiency considerations for all the processes involved in the aircraft manufacturing.
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Profiting by the increasing availability of laser sources delivering intensities above 10 9 W/cm 2 with pulse energies in the range of several Joules and pulse widths in the range of nanoseconds, laser shock processing (LSP) is being consolidating as an effective technology for the improvement of surface mechanical and corrosion resistance properties of metals and is being developed as a practical process amenable to production engineering. The main acknowledged advantage of the laser shock processing technique consists on its capability of inducing a relatively deep compression residual stresses field into metallic alloy pieces allowing an improved mechanical behaviour, explicitly, the life improvement of the treated specimens against wear, crack growth and stress corrosion cracking. Following a short description of the theoretical/computational and experimental methods developed by the authors for the predictive assessment and experimental implementation of LSP treatments, experimental results on the residual stress profiles and associated surface properties modification successfully reached in typical materials (specifically steels and Al and Ti alloys) under different LSP irradiation conditions are presented
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One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance backcontacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunctionsolarcells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 μm in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4laser source, λ = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.
Resumo:
In the Laser-Fired Contact (LFC) process, a laser beam fires a metallic layer through a dielectric passivating layer into the silicon wafer to form an electrical contact with the silicon bulk [1]. This laser technique is an interesting alternative for the fabrication of both laboratory and industrial scale high efficiency passivated emitter and rear cell (PERC). One of the principal characteristics of this promising technique is the capability to reduce the recombination losses at the rear surface in crystalline silicon solar cells. Therefore, it is crucial to optimize LFC because this process is one of the most promising concepts to produce rear side point contacts at process speeds compatible with the final industrial application. In that sense, this work investigates the optimization of LFC processing to improve the back contact in silicon solar cells using fully commercial solid state lasers with pulse width in the ns range, thus studying the influence of the wavelength using the three first harmonics (corresponding to wavelengths of 1064 nm, 532 nm and 355 nm). Previous studies of our group focused their attention in other processing parameters as laser fluence, number of pulses, passivating material [2, 3] thickness of the rear metallic contact [4], etc. In addition, the present work completes the parametric optimization by assessing the influence of the laser wavelength on the contact property. In particular we report results on the morphology and electrical behaviour of samples specifically designed to assess the quality of the process. In order to study the influence of the laser wavelength on the contact feature we used as figure of merit the specific contact resistance. In all processes the best results have been obtained using green (532 nm) and UV (355 nm), with excellent values for this magnitude far below 1 mΩcm2.
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Based on our needs, that is to say, through precise simulation of the impact phenomena that may occur inside a jet engine turbine with an explicit non-linear finite element code, four new material models are postulated. Each one of is calibrated for four high-performance alloys that can be encountered in a modern jet engine. A new uncoupled material model for high strain and ballistic is proposed. Based on a Johnson-Cook type model, the proposed formulation introduces the effect of the third deviatoric invariant by means of three different Lode angle dependent functions. The Lode dependent functions are added to both plasticity and failure models. The postulated model is calibrated for a 6061-T651 aluminium alloy with data taken from the literature. The fracture pattern predictability of the JCX material model is shown performing numerical simulations of various quasi-static and dynamic tests. As an extension of the above-mentioned model, a modification in the thermal softening behaviour due to phase transformation temperatures is developed (JCXt). Additionally, a Lode angle dependent flow stress is defined. Analysing the phase diagram and high temperature tests performed, phase transformation temperatures of the FV535 stainless steel are determined. The postulated material model constants for the FV535 stainless steel are calibrated. A coupled elastoplastic-damage material model for high strain and ballistic applications is presented (JCXd). A Lode angle dependent function is added to the equivalent plastic strain to failure definition of the Johnson-Cook failure criterion. The weakening in the elastic law and in the Johnson-Cook type constitutive relation implicitly introduces the Lode angle dependency in the elastoplastic behaviour. The material model is calibrated for precipitation hardened Inconel 718 nickel-base superalloy. The combination of a Lode angle dependent failure criterion with weakened constitutive equations is proven to predict fracture patterns of the mechanical tests performed and provide reliable results. A transversely isotropic material model for directionally solidified alloys is presented. The proposed yield function is based a single linear transformation of the stress tensor. The linear operator weighs the degree of anisotropy of the yield function. The elastic behaviour, as well as the hardening, are considered isotropic. To model the hardening, a Johnson-Cook type relation is adopted. A material vector is included in the model implementation. The failure is modelled with the Cockroft-Latham failure criterion. The material vector allows orienting the reference orientation in any other that the user may need. The model is calibrated for the MAR-M 247 directionally solidified nickel-base superalloy.
Resumo:
La presente tesis comprende un estudio de metales líquidos, Li, Pb y eutéctico Li17Pb en el ámbito de la tecnología de fusión nuclear. Uno de los problemas fundamentales en futuros reactores de fusión es la producción y extracción de tritio en la denominada envoltura regeneradora (blanket en inglés). Dicho blanket tendrá dos propósitos, la extracción del calor generado por las reacciones de fusión para su posterior conversión en energía eléctrica así como la producción de tritio para realimentar el proceso. Dicha producción se realizará mediante el “splitting” del Li con los neutrones provenientes de la fusión. Esta reacción produce tritio y helio por lo que la interacción del T y el He con el metal líquido, con los materiales estructurales así como con el He es un problema fundamental aun no bien entendido y de gran importancia para futuros diseños. Los capítulos 1 2 y 3 presentan una introducción a dichos problemas. El capítulo 1 introduce al lector en la tecnología de fusión nuclear. El segundo capítulo explica en mayor detalle el uso de metales líquidos en reactores de fusión, no solo en blankets sino también como primera pared, divertor etc, lo que se denomina en general “plasma facing materials”. Por último se ofrece una breve introducción a las técnicas de dinámica molecular clásica (CMD) y un breve resumen de los potenciales más usados. El estudio se ha llevado a cabo utilizando simulación atomística mediante potenciales semi-empíricos del tipo átomo embebido (EAM). La Tesis consta de 4 partes bien definidas. En primer lugar se verificó la idoneidad de los potenciales tipo EAM para simular las propiedades de los metales Li y Pb en fase líquida. Dicho estudio se detalla en el Capítulo 4 y en su extensión, el Apéndice 1, en el que se estudia los límites de validez de esta aproximación. Los resultados de dicho estudio han sido publicados y presentados en diversos congresos internacionales. Un resumen de la metodología seguida fue publicado como capítulo de libro en Technofusión 2011. Los resultados se presentaron en diversos congresos internacionales, entre ellos ICENES 2011, (Artículo en ICENES Proceedings) ICOPS-SOFE 2011, en una presentación oral etc. El trabajo ha sido aceptado recientemente en Journal of Nuclear Materiales (Fraile et al 2012). La segunda parte y más importante comprende el desarrollo de un potencial para el estudio de la mezcla de ambos metales. Éste es el trabajo más novedoso e importante dado que no existía en la literatura un potencial semejante. Se estudiaron dos aproximaciones distintas al problema, un potencial tipo EAM/cd y un potencial EAM/alloy. Ambos potenciales dan resultados satisfactorios para la simulación del eutéctico (y concentraciones de Li menores que el 17%). Sin embargo el sistema LiPb en todas las concentraciones es un sistema que se aparta enormemente de una solución ideal y dicho potencial no daba buenos resultados para mezclas PbLi con concentraciones de Li grandes. Este problema fue solventado mediante el desarrollo de un segundo potencial, esta vez tipo EAM/alloy (segunda parte del Capítulo 5). Dicho trabajo será enviado a Physical Review Letters o a Phys. Rev. B, y una extensión junto con un estudio detallado de las propiedades del eutéctico de acuerdo con nuestras simulaciones se enviará a continuación a Phys. Rev. B. En tercer lugar se estudió el problema de la difusividad del H en metales líquidos aprovechando distintos potenciales existentes en la literatura. El problema del H en metales líquidos es importante en metalurgia. En dicho capítulo se estudió la difusividad del H en Pd, Ni y Al con potenciales tipo EAM, y también con un potencial más sofisticado que tiene en cuenta la dependencia angular de las interacciones (ADP por sus siglas en inglés). De este modo disponemos de un estudio detallado del problema con diferentes modelos y diferentes metales. La conclusión apunta a que si se compara con los resultados experimentales (muy escasos) los resultados obtenidos mediante CMD dan valores bajos de la difusividad del H. Las razones de dicho desacuerdo entre simulación y experimentos se detallan en el Capítulo 6. Este trabajo ha sido presentado en una presentación oral en el reciente congreso internacional “Trends on Nanothecnology” TNT 2012 celebrado en Madrid. El trabajo será publicado en un futuro próximo. Por último, como se dijo anteriormente, el estudio del He, la formación de burbujas en metales líquidos, su difusión nucleación y cavitación es otro problema deseable de ser estudiado mediante técnicas atomísticas. Para ello es necesario el desarrollo de diversos potenciales, He-Li, He-Pb y un potencial ternario Pb-Li-He. Para ello se han realizado simulación ab initio de los sistemas Pb+He y Li+He. Dicho estudio pretende calcular las fuerzas entre los átomos del metal (Pb o Li) con intersticiales de He. De este modo aplicaremos el “force matching method” (FMM) para el desarrollo de dichos potenciales. En el Capítulo 7 se detallan los resultados obtenidos referidos a las posiciones más favorables de las impurezas de He dentro de redes cristalinas de Pb y Li así como el efecto de tener en cuenta el acoplo spin-orbita (SOC en inglés). El análisis de los resultados en términos de transferencia de carga y análisis de las densidades electrónicas, así como la creación de los potenciales mencionados está en progreso. En conjunto la tesis presenta un estudio de los diversos problemas relacionados con el uso de metales líquidos en reactores de fusión y representa un primer paso en la determinación de parámetros de gran importancia para el diseño de blankets y sistemas de primera pared. Con la simulación MD de dichos problemas mediante, importante, potenciales realistas, valores de difusión, solubilidad etc de especies ligeras, H (o sus isotopos) y He en metales líquidos podrá ser calculada complementando así la base de datos que presenta enormes incertidumbres.
Resumo:
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial process steps when fabricating high-efficiency solar cells using low-cost, lower-purity silicon wafers. In this work, we show that for a given metal concentration, the size and density of metal silicide precipitates strongly influences the gettering efficacy. Different precipitate size distributions can be already found in silicon wafers grown by different techniques. In our experiment, however, the as-grown distribution of precipitated metals in multicrystalline Si sister wafers is engineered through different annealing treatments in order to control for the concentration and distribution of other defects. A high density of small precipitates is formed during a homogenization step, and a lower density of larger precipitates is formed during extended annealing at 740º C. After PDG, homogenized samples show a decreased interstitial iron concentration compared to as-grown and ripened samples, in agreement with simulations.
Resumo:
We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.
Resumo:
With the final goal of integrating III-V materials to silicon for tandem solar cells, the influence of the metal-organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated.
Resumo:
The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behaviour of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. These impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, elastic modulus and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.
Resumo:
The atomic environments of Fe and Co involved in the magnetostriction effect in FeCoB alloys have been identified by differential extended x-ray fine structure (DiffEXAFS) spectroscopy. The study, done in amorphous and polycrystalline FeCoB films, demonstrates that the alloys are heterogeneous and that boron plays a crucial role in the origin of their magnetostrictive properties. The analysis of DiffEXAFS in the polycrystalline and amorphous alloys indicates that boron activates magnetostriction when entering as an impurity into octahedral interstitial sites of the Fe bcc lattice, causing its tetragonal distortion. Magnetostriction would be explained then by the relative change in volume when the tetragonal axis of the site is reoriented under an externally applied magnetic field. The experiment demonstrates the extreme sensitivity of DiffEXAFS to characterize magnetostrictive environments that are undetectable in their related EXAFS spectra.
Resumo:
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.
Resumo:
Laser material processing is being extensively used in photovoltaic applications for both the fabrication of thin film modules and the enhancement of the crystalline silicon solar cells. The two temperature model for thermal diffusion was numerically solved in this paper. Laser pulses of 1064, 532 or 248 nm with duration of 35, 26 or 10 ns were considered as the thermal source leading to the material ablation. Considering high irradiance levels (108–109 W cm−2), a total absorption of the energy during the ablation process was assumed in the model. The materials analysed in the simulation were aluminium (Al) and silver (Ag), which are commonly used as metallic electrodes in photovoltaic devices. Moreover, thermal diffusion was also simulated for crystalline silicon (c-Si). A similar trend of temperature as a function of depth and time was found for both metals and c-Si regardless of the employed wavelength. For each material, the ablation depth dependence on laser pulse parameters was determined by means of an ablation criterion. Thus, after the laser pulse, the maximum depth for which the total energy stored in the material is equal to the vaporisation enthalpy was considered as the ablation depth. For all cases, the ablation depth increased with the laser pulse fluence and did not exhibit a clear correlation with the radiation wavelength. Finally, the experimental validation of the simulation results was carried out and the ability of the model with the initial hypothesis of total energy absorption to closely fit experimental results was confirmed.
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There is a growing trend towards using thinner wafers in order to reduce the costs of solar energy. But the current tools employed during the solar cells production are not prepared to work with thinner wafers, decreasing the industrial yield due to the high number of wafers broken. To develop new tools, or modify existing ones, the mechanical properties have to be determined. This paper tackles an experimental study of the mechanical properties of wafers. First, the material characteristics are detailed and the process to obtain wafers is presented. Then, the complete test setup and the mechanical strength results interpreted by a described numerical model are shown.
Resumo:
The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behavior of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. The impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, Young’s modulus, hardness and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.