996 resultados para Optical fabrication
Resumo:
Pulsed photoacoustic studies in solutions of C70 in toluene are made using the 532-nm radiation from a frequency-doubled Nd:YAG laser. It is found that contrary to expectation, there is no photoacoustic (PA) signal enhancement in the power-limiting range of laser fluences. Instead, the PA signal tends to saturate during optical power-limiting phenomenon. This could be due to the enhanced optical absorption from the photoexcited state and hence the depletion of the ground-state population. PA measurements also ruled out the possibility of multiphoton absorption in the C70 solution. We demonstrate that the nonlinear absorption leading to optical limiting is mainly due to reverse saturable absorption.
Resumo:
The length-dependent tuning of the fluorescence spectra of a dye doped polymer fiber is reported. The fiber is pumped sideways and the fluorescence is measured from one of the ends. The excitation of a finite length of dye doped fiber is done by a diode pumped solid state laser at a wavelength of 532 nm. The fluorescence emission is measured at various positions of the fiber starting from a position closer to the pumping region and then progressing toward the other end of the fiber. We observe that the optical loss coefficients for shorter and longer distances of propagation through the dye doped fiber are different. At longer distances of propagation, a decrease in optical loss coefficient is observed. The fluorescence peaks exhibit a redshift of 12 nm from 589 to 610 nm as the point of illumination progresses toward the detector end. This is attributed to the self-absorption and re-emission of the laser dye in the fiber.
Resumo:
Third order nonlinear susceptibility χ(3) and second hyperpolarizability (γ) of a bis-naphthalocyanine viz. europium naphthalocyanines, Eu(Nc)2, were measured in dimethyl formamide solution using degenerate four wave mixing at 532 nm under nanosecond pulse excitation. Effective nonlinear absorption coefficient, βeff and imaginary part of nonlinear susceptibility, Im(χ(3)) were obtained using open aperture /Z-scan technique at the same wavelength. Optical limiting property of the sample was also investigated. The role of excited state absorption in deciding the nonlinear properties of this material is discussed.
Resumo:
The wavelength dependence of thermal lens signal from organic dyes are studied using dual beam thermal lens technique. It is found that the profile of thermal lens spectrum widely differ from the conventional absorption spectrum in the case of rhodamine B unlike in the case of crystal violet. This is explained on the basis of varying contribution of nonradiative relaxations from the excited vibronic levels.
Resumo:
Two-photon excited (TPE) side illumination fluorescence studies in a Rh6G-RhB dye mixture doped polymer optical fiber (POF) and the effect of energy transfer on the attenuation coefficient is reported. The dye doped POF is pumped sideways using 800 nm, 70 fs laser pulses from a Ti:sapphire laser, and the TPE fluorescence emission is collected from the end of the fiber for different propagation distances. The fluorescence intensity of RhB doped POF is enhanced in the presence of Rh6G as a result of energy transfer from Rh6G to RhB. Because of the reabsorption and reemission process in dye molecules, an effective energy transfer is observed from the shorter wavelength part of the fluorescence spectrum to the longer wavelength part as the propagation distance is increased in dye doped POF. An energy transfer coefficient is found to be higher at shorter propagation distances compared to longer distances. A TPE fluorescence signal is used to characterize the optical attenuation coefficient in dye doped POF. The attenuation coefficient decreases at longer propagation distances due to the reabsorption and reemission process taking place within the dye doped fiber as the propagation distance is increased.
Resumo:
Optical absorption and emission spectral studies of various phthalocyanine molecules, viz., LaPc, NdPc, SmPc, EuPc, CuPc and ZnPc in a polymer matrix of cyano acrylate are reported for the first time. All the absorption spectra show an intense B band (Soret) in the UV region followed by a weaker Q band in the visible region. The positions of the Q and B bands are found to have dependence on the metallic substitution. Values of the important spectral parameters, viz., molar extinction coefficient (ϵ), oscillator strength (f), radiative transition rate and decay time of the excited singlet state are also presented and compared with other solid matrices. The recorded fluorescence spectrum shows two broad emission bands in the case of NdPc, whereas for ZnPc only a very weak band is observed. The absence of emission bands for the other metallated phthalocyanines is attributed to increased spin orbit interaction and intersystem crossing.
Resumo:
Optical limiting and thermo-optic properties of C60 in toluene are studied using 532 nm, 9 ns pulses from a frequency-doubled Nd:YAG laser. Optical limiting studies in these fullerene molecules lead to the conclusion that reverse saturable absorption is the major mechanism for limiting properties in these molecules. Thermal lensing measurements are also performed in fullerene solutions. The quadratic dependence of thermal lens signal on incident energy confirms that enhanced optical absorption by the sample via excited triplet state absorption may play a leading role in the limiting property.
Resumo:
Multimode laser emission is observed in a polymer optical fiber doped with a mixture of Rhodamine 6G (Rh 6G) and Rhodamine B (Rh B) dyes. Tuning of laser emission is achieved by using the mixture of dyes due to the energy transfer occurring from donor molecule (Rh 6G) to acceptor molecule (Rh B). The dye doped poly(methyl methacrylate)-based polymer optical fiber is pumped axially at one end of the fiber using a 532 nm pulsed laser beam from a Nd:YAG laser and the fluorescence emission is collected from the other end. At low pump energy levels, fluorescence emission is observed. When the energy is increased beyond a threshold value, laser emission occurs with a multimode structure. The optical feedback for the gain medium is provided by the cylindrical surface of the optical fiber, which acts as a cavity. This fact is confirmed by the mode spacing dependence on the diameter of the fiber.
Resumo:
We propose and demonstrate a new technique for evanescent wave chemical sensing by writing long period gratings in a bare multimode plastic clad silica fiber. The sensing length of the present sensor is only 10 mm, but is as sensitive as a conventional unclad evanescent wave sensor having about 100 mm sensing length. The minimum measurable concentration of the sensor reported here is 10 nmol/l and the operating range is more than 4 orders of magnitude. Moreover, the detection is carried out in two independent detection configurations viz., bright field detection scheme that detects the core-mode power and dark field detection scheme that detects the cladding mode power. The use of such a double detection scheme definitely enhances the reliability and accuracy of the results. Furthermore, the cladding of the present fiber need not be removed as done in conventional evanescent wave fiber sensors.
Resumo:
Microbent optical fibers are potential candidates for evanescent wave sensing. We investigate the behavior of a permanently microbent fiber optic sensor when it is immersed in an absorbing medium. Two distinct detection schemes, namely, bright-field and dark-field detection configuration, are employed for the measurements. The optical power propagating through the sensor is found to vary in a logarithmic fashion with the concentration of the absorbing species in the surrounding medium. We observe that the sensitivity of the setup is dependent on the bending amplitude and length of the microbend region for the bright-field detection scheme, while it is relatively independent of both for the dark-field detection configuration. This feature can be exploited in compact sensor designs where reduction of the sensing region length is possible without sacrificing sensitivity.
Resumo:
In this work. Sub-micrometre thick CulnSe2 films were prepared using different
techniques viz, selenization through chemically deposited Selenium and Sequential
Elemental Evaporation. These methods
are simpler than co-evaporation technique, which is known to be the most suitable
one for CulnSe2 preparation. The films were optimized by varying the composition
over a wide range to find optimum properties for device fabrication. Typical absorber
layer thickness of today's solar cell ranges from 2-3m. Thinning of the absorber
layer is one of the challenges to reduce the processing time and material usage,
particularly of Indium. Here we made an attempt to fabricate solar cell with absorber
layer of thickness
Resumo:
The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.
Resumo:
This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for TFT applications. Amorphous materials are promising in achieving better device performance on temperature sensitive substrates compared to polycrystalline materials. Most of these amorphous oxides are multicomponent and as such there exists the need for an optimized chemical composition. For this we have to make individual targets with required chemical composition to use it in conventional thin film deposition techniques like PLD and sputtering. Instead, if we use separate targets for each of the cationic element and if separately control the power during the simultaneous sputtering process, then we can change the chemical composition by simply adjusting the sputtering power. This is what is done in co-sputtering technique. Eventhough there had some reports about thin film deposition using this technique, there was no reports about the use of this technique in TFT fabrication until very recent time. Hence in this work, co-sputtering has performed as a major technique for thin film deposition and TFT fabrication. PLD were also performed as it is a relatively new technique and allows the use high oxygen pressure during deposition. This helps to control the carrier density in the channel and also favours the smooth film surface. Both these properties are crucial in TFT.Zinc tin oxide material is interesting in the sense that it does not contain costly indium. Eventhough some works were already reported in ZTO based TFTs, there was no systematic study about ZTO thin film's various optoelectronic properties from a TFT manufacturing perspective. Attempts have made to analyse the ZTO films prepared by PLD and co-sputtering. As more type of cations present in the film, chances are high to form an amorphous phase. Zinc indium tin oxide is studied as a multicomponent oxide material suitable for TFT fabrication.
Resumo:
Two stage processes consisting of precursor preparation by thermal evaporation followed by chalcogenisation in the required atmosphere is found to be a feasible technique for the PV materials such as n-Beta In2S3, p-CulnSe2, p-CulnS2 and p-CuIn(Sel_xSx)2. The growth parameters such as chalcogenisation temperature and duration of chalcogenisation etc have been optimised in the present study.Single phase Beta-In2S3 thin films can be obtained by sulfurising the indium films above 300°C for 45 minutes. Low sulfurisation temperatures required prolonged annealing after the sulfurisation to obtain single phase Beta-1n2S3, which resulted in high material loss. The maximum band gap of 2.58 eV was obtained for the nearly stoichiometric Beta-In2S3 film which was sulfurised at 350°C. This wider band gap, n type Beta-In2S3 can be used as an alternative to toxic CdS as window layer in photovoltaics .The systematic study on the structural optical and electrical properties of CuInSe2 films by varying the process parameters such as the duration of selenization and the selenization temperature led to the conclusion that for the growth of single-phase CuInSe2, the optimum selenization temperature is 350°C and duration is 3 hours. The presence of some binary phases in films for shorter selenization period and lower selenization temperature may be due to the incomplete reaction and indium loss. Optical band gap energy of 1.05 eV obtained for the films under the optimum condition.In order to obtain a closer match to the solar spectrum it is desirable to increase the band gap of the CulnSe2 by a few meV . Further research works were carried out to produce graded band gap CuIn(Se,S)2 absorber films by incorporation of sulfur into CuInSe2. It was observed that when the CulnSe2 prepared by two stage process were post annealed in sulfur atmosphere, the sulfur may be occupying the interstitial positions or forming a CuInS2 phase along with CuInSe2 phase. The sulfur treatment during the selenization process OfCu11 ln9 precursors resulted in Culn (Se,S)2 thin films. A band gap of 1.38 eV was obtained for the CuIn(Se,S)2.The optimised thin films n-beta 1n2S3, p-CulnSe2 and p-Culn(Sel-xSx)2 can be used for fabrication of polycrystalline solar cells.
Resumo:
The authors apply the theory of photothermal lens formation and also that of pure optical nonlinearity to account for the phase modulation in a beam as it traverses a nonlinear medium. It is used to simultaneously determine the nonlinear optical refraction and the thermo-optic coefficient. They demonstrate this technique using some metal phthalocyanines dissolved in dimethyl sulfoxide, irradiated by a Q-switched Nd:YAG laser with 10 Hz repetition rate and a pulse width of 8 ns. The mechanism for reverse saturable absorption in these materials is also discussed.