Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of gamma-LiAlO2

gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

Spectra analysis of a novel Ti-doped LiAlO2 single crystal

LiAlO2 single crystals doped with Ti at concentration 0.2 at.% are grown by the Czochralskl technique with dimensions Phi 42 x 55 mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the V-Li and V-O absorptions, respectively. The peaks at 716nm and 798nm may stem from the V-Li(+) and F+ absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.

高浓度掺Er^3＋铌酸锂晶体的光谱参数计算

用提拉法成功地生长了6mol％的高浓度掺铒铌酸锂晶体。测量了晶体的两个非偏振方向（X和Z）以及两个偏振方向（π和δ）的吸收光谱。高浓度掺铒铌酸锂晶体的吸收系数高，有利于提高泵浦效率。根据所测的吸收光谱用Judd-Ofelt理论拟合出了Er^3＋离子的强度参数Ωλ。所得的均方差结果显示偏振拟合的误差要小于非偏振拟合。利用偏振吸收数据计算了各能级跃迁的自发辐射跃迁几率（AJJ’）、辐射寿命（τ）、荧光分支比（β）和积分发射截面（σp）等参数，对计算结果进行了讨论并与其他文献的报道结果进行了比较。

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

Efeito da temperatura de secagem de dois tipos de silano e da supressão ou redução do tempo de condicionamento com ácido hidrofluorídrico na resistência de união entre uma cerâmica de dissilicato de lítio e um cimento resinoso

Este estudo avaliou o efeito de diferentes métodos de silanização e aplicação do ácido hidrofluorídrico (HF) sobre a resistência à microtração de uma cerâmica de dissilicato de lítio a um cimento resinoso. Quarenta blocos de IPS e.max Press /Ivoclar Vivadent (5x5x6mm) foram cimentados a blocos de resina Z250/3M ESPE (5x5x6mm) usando o cimento resinoso RelyX ARC/3M ESPE de acordo com os seguintes métodos de tratamento superficial: G1: 20s de ácido fluorídrico (HF) + silano não hidrolisado Primer-Activactor/Dentsply (SNH) seco à temperatura ambiente; G2: 20s HF + silano pré-hidrolisado RelyX Ceramic-Primer/3M ESPE (SPH) seco à temperatura ambiente; G3: 10s HF + SNH seco com ar quente (50oC-2min); G4: 10sHF + SPH seco com ar quente (50oC-2min); G5: sem ácido, SNH seco com ar quente (50oC-2min); G6: sem ácido, SPH seco com ar quente (50oC-2min); G7: sem ácido, SNH seco à temperatura ambiente; G8: sem ácido, SPH seco à temperatura ambiente. Antes de cada método de silanização, os blocos cerâmicos receberam acabamento com lixas de carbeto de silício (220-600) e limpeza com ácido fosfórico 37% (1min). A cimentação foi realizada com carga vertical de 1kg por 10min. Os conjuntos de cerâmica/cimento/resina foram armazenados em água destilada (37C) por 24 horas e depois seccionados em máquina de corte Isomet 1000 a fim de obter palitos (n = 40) de 1mm2 de área da seção transversal, que foram submetidos ao teste de microtração em máquina de ensaio universal Emic (v = 0,5mm/min). O modo de fratura foi avaliado em microscópio eletrônico de varredura. A análise estatística foi realizada utilizando ANOVA / Dunnett (p-valor = 0,000). As médias MPa e desvio padrão foram: G1-21,5 (8,9) BC; G2-30,5 (7,2) A; G3-19.4 (9.1) BC; G4-24,0 (9,0) B; G5-8.1 (3.2) D; G6 -18,0 (6,2) C; G7-7.8 (2,6) D; G8-6.3 (2,5) D. Grupos 2, 3, 4 e 6 não tiveram falhas prematuras dos palitos contra os grupos 1, 5, 7 e 8, que apresentaram 2,2; 44,4; 75,6 e 33,3% de perdas prematuras, respectivamente. O teste de correlação foi realizado apresentando significância estatística, com valor de -0,736 (p-valor = 0,000), mostrando que, a medida que o percentual de perda prematura aumenta, a média da MPa diminui. Quanto ao modo de fratura, observou-se 44,97% de falhas do tipo mista, 51,70% de falhas do tipo adesiva, 3,33% de falhas do tipo coesiva do cimento. Quando é realizada a supressão do condicionamento com HF como pré-tratamento da superfície cerâmica IPS e.max Press, a aplicação de silano SPH, associada ao seu tratamento térmico, deve ser o método de silanização recomendado, embora os valores mais elevados de resistência de união tenham sido os obtidos quando utilizado o condicionamento com HF por 20s. Quando é realizada a redução do tempo de condicionamento com HF para 10s, a aplicação do silano (SPH ou SNH) deve ser sempre associada ao seu tratamento térmico. O SNH só deve ser usado se as superfícies das cerâmicas IPS e.max Press forem tratadas com HF.

Análise da via Wnt e seu envolvimento no processo da tumorigênese do câncer colo-retal

O câncer colo-retal (CCR) representa o quarto tipo de câncer mais freqüente no Brasil entre homens e mulheres e a sobrevida para esse tipo de neoplasia é considerada boa, se a doença for diagnosticada em estádio inicial. Neste tipo de câncer a progressão do adenoma (tumor benigno) para o adenocarcinoma (tumor maligno) é dependente do acúmulo de mutações em diversos oncogenes e genes supressores de tumor. Estas mutações podem levar a alterações de importantes vias de sinalização que controlam estes eventos como, por exemplo, as vias Wnt e EGFR. No entanto, os mecanismos moleculares e celulares mediados por estas vias durante a progressão do CCR permanecem por serem definidos. Neste trabalho foi avaliada a participação da via Wnt e do EGFR durante a progressão do CCR usando células Caco-2, uma linhagem celular derivada de adenocarcinoma de cólon humano como modelo. As células foram tratadas com EGF, ativador da via EGFR, e cloreto de lítio (LiCl), um conhecido inibidor da enzima GSK-3β e conseqüentemente, ativador da via Wnt, ou alternativamente com a combinação de ambas drogas. Após os tratamentos, foi avaliada a morfologia celular, localização e expressão de proteínas juncionais, os padrões proliferativos e do ciclo celular e o potencial tumorigênico (migração e formação de colônias). Nossos resultados mostram que a localização subcelular das proteínas juncionais claudina-1 e β-catenina foi alterada após tratamento com EGF e LiCl, porém a expressão não foi afetada. A localização nuclear de β-catenina, um marcador da ativação da via Wnt, foi observada após tratamento com ambos os compostos, no entanto estes agentes modularam a enzima GSK-3β de forma diferencial. Além disso, tratamento com EGF aumentou a capacidade proliferativa e migratória da célula, mas não alterou a formação de colônias. LiCl, apesar de ser um conhecido ativador da via Wnt, inibiu o aumento da proliferação e migração causado pelo EGF, como visto pelo tratamento das células com EGF+LiCl, e reduziu a formação de colônias. Nossos resultados revelaram que LiCl possui uma atividade supressora de tumor o que pode representar um novo papel para este composto como um possível agente terapêutico para o tratamento do CCR.

Liquid salt cooled flexible conversion ratio fast reactor: Neutronic design

This paper presents the neutronic design of a liquid salt cooled fast reactor with flexible conversion ratio. The main objective of the design is to accommodate interchangeably within the same reactor core alternative transuranic actinides management strategies ranging from pure burning to self-sustainable breeding. Two, the most limiting, core design options with unity and zero conversion ratios are described. Ternary, NaCl-KCl-MgCl2 salt was chosen as a coolant after a rigorous screening process, due to a combination of favourable neutronic and heat transport properties. Large positive coolant temperature reactivity coefficient was identified as the most significant design challenge. A wide range of strategies aiming at the reduction of the coolant temperature coefficient to assure self-controllability of the core in the most limiting unprotected accidents were explored. However, none of the strategies resulted in sufficient reduction of the coolant temperature coefficient without significantly compromising the core performance characteristics such as power density or cycle length. Therefore, reactivity control devices known as lithium thermal expansion modules were employed instead. This allowed achieving all the design goals for both zero and unity conversion ratio cores. The neutronic feasibility of both designs was demonstrated through calculation of reactivity control and fuel loading requirements, fluence limits, power peaking factors, and reactivity feedback coefficients. © 2009 Elsevier B.V. All rights reserved.

The use of non-dimensional parameters to study stress in lithiumion battery electrode storage particles

Mechanical degradation is thought to be one of the causes of capacity fade within Lithium-Ion batteries. In this work we develop a coupled stress-diffusion model for idealized spherical storage particles, which is analogous to the development of thermal strains. We then non-dimensionalize the model and identify three important parameters that control the development of stress within these particles. We can therefore use a wide number of values for these parameters to make predictions about the stress responses of different materials. The maximum stress developed within the particle for different values of these parameters are plotted as stress maps. A two dimensional model of a battery was then developed, in order to study the effect of particle morphology. Copyright © 2012 by ASME.

Electrical properties of LiNbO3 (electrolyte)/Cu (anode) bi-layers

In this work specific film structures of Li-Nb-O/Li/Li-Nb-O are investigated by AC Impedance Spectroscopy measurements at different temperatures. This gives the opportunity to investigate properties of the material itself and, at the same time, to consider the influence of the grain boundaries on the ionic behavior of the polycrystalline Lithium Niobate. On the other hand, LiNbO3/Li/Cu multi-layers are studied as electrolyte/anode bi-layers and potential parts of "Li-free" microbatteries. The Li deficiency in the as deposited Li-Nb-O films is cured by forming a "sandwich" of Li-Nb-O/Li/Li-Nb-O, which after annealing becomes ionic conductor. The electrical behavior of an annealed film depends on two sources. The first is due to properties of the material itself and the second is based on the network of the grain boundaries. The average size of the grains is strongly influenced by the structure of the ohmic-contact/substrate. The electrical behavior of the electrolyte/anode interface of the "Li-free" structure LiNbO3/Li/Cu/Au is very similar to the impedance measurements of the single LiNbO3 single films. The whole multilayer structure, though, presents a third relaxation time which is consistent of a small resistance. This resistance is independent of temperature and it seems that is due to the metallic interface Li/Cu/Au. © 2010 Elsevier B.V. All rights reserved.

Compensatory growth response in three-spined stickleback in relation to feed-deprivation protocols

Different protocols of food deprivation were used to bring two groups of juvenile three-spined sticklebacks Gaslerosteus aculeatus to the same reduced body mass in comparison with a control group fed daily ad libitum. One group experienced I week or deprivation then 2 weeks on maintenance rations. The second group experienced I week of ad lithium feeding followed by 2 weeks of deprivation. The deprived groups were reduced to a mean mass ore. 80% of controls. The compensatory growth response shown when ad libitum feeding was resumed was independent of the trajectory by which the three-spined sticklebacks had reached the reduced body mass. The compensatory response was Sufficient to return the deprived groups to the mass and length trajectories shown by the control group within 4 weeks. There was full compensation for dry mass and total lipid, but incomplete compensation for lipid-free dry mass. Hyperphagia and increased growth efficiency were present in the re-feeding phase, but there was a lag of a week before the hyperphagia was established. The consistency of the compensatory response of immature three-spined sticklebacks provides a potential model system for the analysis and prediction of appetite and growth in teleosts. (C) 2003 The Fisheries Society of the British isles.

Mechanical and chemical bonding properties of ground state BeH2

The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.