954 resultados para Layered perovskites,Photo-Induced Current Transient Spectroscopy,PICTS,deep states,2D perovskites


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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We review evidence that Stem Cell Factor (SCF) plays an important role in the pathophysiology of asthma. SCF is produced by a wide variety of cells present in asthmatic lung, including mast cells and eosinophils. Its receptor, c-kit, is broadly expressed on mature mast cells and eosinophils. SCF promotes recruitment of mast cell progenitors into tissues, as well as their local maturation and activation. It also promotes eosinophil survival, maturation and functional activation. SCF enhances IgE-dependent release of mediators from mast cells, including histamine, leukotrienes, cytokines (TNF-alpha, IL-5, GM-CSF) and chemokines (RANTES/CCL5, MCP-1/CCL2, TARC/CCL17 e MDC/CCL22); it is required for IL-4 production in mast cells. SCF, acting in concert with IgE, also upregulates the expression and function of CC chemokine receptors in mast cells. Structural and resident airway cells express increased levels of SCF in the bronchus of asthmatic patients. In a murine model of asthma, allergen exposure increased production of SCF by epithelial cells and alveolar macrophages, which was transient and paralleled by histamine release. SCF induced long-lived airway hyperreactivity, which was prevented by local neutralization of SCF, as well as by inhibitors of the production or activity of cysteinyl-leukotrienes. Together, these observations suggest that SCF has an important role in asthma.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Many researchers became interested in the discovery of Bi(2)Sr(2)CaCu(2)O(8+delta) oxides with critical temperature of around 80 K. It is known that the critical temperature is related to the CuO2 planes of the material. For this reason, the study of the interstitial oxygen in these oxides is of great relevance. The samples were prepared by means of conventional solid state reactions, through the stoichiometric mixture of precursory powders. After the sinterization, the samples were submitted to measurements of density, electrical resistivity, x-ray diffraction, scanning electron microscopy and energy dispersion spectroscopy, with the objective of performing their characterization. The measurements of mechanical spectroscopy were performed by a torsion pendulum. The results show three relaxation processes in the temperature range of 200 and 700 K, with activation energy of approximately 0.9 eV, which has been attributed to the dynamics of the interstitial oxygen present in the material.

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Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The films were prepared by flash evaporation on silicon substrates. Structural changes were induced by the heat treatments: an increasing degree of crystallization as a function of the annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, and the dependence of the corresponding Raman peak intensity with the annealing temperature (occurring in two regimes) is explained. A mechanism for the crystallization of the amorphous GaSb is proposed, based on the prior migration of the Sb excess outside the GaSb region to be crystallized. © 1995 American Institute of Physics.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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The degradation behaviour of SnO(2)-based varistors (SCNCr) due to current pulses (8/20 mu s) is reported here for the first time in comparison with the ZnO-based commercial varistors (ZnO). Puncturing and/or cracking failures were observed in ZnO-based varistors possessing inferior thermo-mechanical properties in comparison with that found in a SCNCr system free of failures. Both systems presented electric degradation related to the increase in the leakage current and decrease in the electric breakdown field, non-linear coefficient and average value of the potential barrier height. However, it was found that a more severe degradation occurred in the ZnO-based varistors concerning their non-ohmic behaviour, while in the SCNCr system, a strong non-ohmic behaviour remained after the degradation. These results indicate that the degradation in the metal oxide varistors is controlled by a defect diffusion process whose rate depends on the mobility, the concentration of meta-stable defects and the amount of electrically active interfaces. The improved behaviour of the SCNCr system is then inferred to be associated with the higher amount of electrically active interfaces (85%) and to a higher energy necessary to activate the diffusion of the specific defects.