Prefrontal white matter abnormalities in young adult with major depressive disorder: A diffusion tensor imaging study

Prefrontal impairments have been hypothesized to be most strongly associated with the cognitive and emotional dysfunction in depression. Recently, white matter microstructural abnormalities in prefrontal lobe have been reported in elderly patients with ma

Developpement de la peche artisanale dans les eaux Burundaises du Lac Tanganyika

A light fishery for "Ndagala" (Strolothrissa tanganicae) has been practised for many years on Lake Tanganyika. Initially this had a low catch rate, but has since been developed by the introduction of an artisanal fishery unit based on the catamaran. A unit consists of a pair of metal canoes joined together. The fish are attracted by three lights mounted on the structure, and are caught with a pyramid-shaped lift net. Selected beaches have been reserved for the artisanal fishery and the numher of units operating has increased from 12 in 1957 to 538 in 1972. The mean annual catch per unit is 11,000 kg, which is not sufficient for the fishery to be economic. However, prediction of a possible mean catch as high as 40 tons year encouraged the Burundi Government to launch a project with help from the Freedom from Hunger Campaign. This was designed to develop the fishery by the creation of artisanal fishing centres, and to make available a large number of fully equipped catamarans which could be paid for by a system of hire-purchase. The success of the project has illustrated that the furnishing of adequate equipment can bring about a transformation of the traditional fishery.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

SIMPLE REMESHING SCHEME FOR THE FINITE ELEMENT BASED SIMULATION OF DOPANT DIFFUSION IN SILICON.

Process simulation programs are valuable in generating accurate impurity profiles. Apart from accuracy the programs should also be efficient so as not to consume vast computer memory. This is especially true for devices and circuits of VLSI complexity. In this paper a remeshing scheme to make the finite element based solution of the non-linear diffusion equation more efficient is proposed. A remeshing scheme based on comparing the concentration values of adjacent node was then implemented and found to remove the problems of oscillation.

Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.