937 resultados para Chalcogenide glass
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Drawing of "Section thru Wheelpit" dated September 1925. Shows unit no.1 through unit no.11, power house floor and water surface.
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Engineer drawing (untitled), some of the labels read "exciter chamber", "fore bay", "power house floor".
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Four men (unknown) standing in the tunnel wearing hard hats.
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A large group of men in hard hats in the tunnel. The names of the men are unknown.
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Four men standing in hydro tunnel.
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Letter to S.D. Woodruff from A. Jeffrey importer of Hardware, Iron, Steel, and Window Glass of St. Catharines, Ont. A. Jeffrey says that he will be able to supply Mr. Woodruff with glass and iron pipe, June 7, 1875.
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Letter to S.D. Woodruff from A. Jeffrey importer of Hardware, Iron, Steel, and Window Glass of St. Catharines, Ont. regarding breakage and freight, June 23, 1875.
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Unsigned letter to A. Jeffrey written on an envelope stating that the glass was free from breakage, therefore there would be a deduction of 10 percent, June 28, 1875.
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Receipt from Chance Brothers and Co. Glass Works near Birmingham, England regarding payment received for glass panes. This is accompanied by an envelope, April 6, 1875.
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Note regarding cut glass prices, n.d.
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Receipt from John R. Monro, Tea, China, Glass and Crockery House, St. Catharines for kitchen items, shoes and mustard, April 12, 1887.
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Receipt from Chatfield and Neelon, St. Catharines for freezer, glass globe and fixtures, July 1, 1887.
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The thesis provides an overall review and introduction to amorphous semiconductors, followed by a brief discussion on the important structural models proposed for chalcogenide glasses and their electrical, optional and thermal properties. It also gives a brief description of the Physics of thin films, ion implantation and Photothermal Deflection Spectroscopy. A brief description of the experimental setup of a photothermal deflection spectrometer and the details of the preparation and optical characterization of the thin film samples. It deals with the employment of the subgap optional absorption measurement by PDS to characterize the defects, amorphization and annealing behavior in silicon implanted with B+ ions and the profiles of ion range and vacancy distribution obtained by the TRIM simulation. It reports the results of all absorption measurements by PDS in nitrogen implanted thin film samples of Ge-Se and As-Se systems