Designing and testing an advanced pneumatic braking system for heavy vehicles

Heavy goods vehicles exhibit poor braking performance in emergency situations when compared to other vehicles. Part of the problem is caused by sluggish pneumatic brake actuators, which limit the control bandwidth of their antilock braking systems. In addition, heuristic control algorithms are used that do not achieve the maximum braking force throughout the stop. In this article, a novel braking system is introduced for pneumatically braked heavy goods vehicles. The conventional brake actuators are improved by placing high-bandwidth, binary-actuated valves directly on the brake chambers. A made-for-purpose valve is described. It achieves a switching delay of 3-4 ms in tests, which is an order of magnitude faster than solenoids in conventional anti-lock braking systems. The heuristic braking control algorithms are replaced with a wheel slip regulator based on sliding mode control. The combined actuator and slip controller are shown to reduce stopping distances on smooth and rough, high friction (μ = 0.9) surfaces by 10% and 27% respectively in hardware-in-the-loop tests compared with conventional ABS. On smooth and rough, low friction (μ = 0.2) surfaces, stopping distances are reduced by 23% and 25%, respectively. Moreover, the overall air reservoir size required on a heavy goods vehicle is governed by its air usage during an anti-lock braking stop on a low friction, smooth surface. The 37% reduction in air usage observed in hardware-in-the-loop tests on this surface therefore represents the potential reduction in reservoir size that could be achieved by the new system. © 2012 IMechE.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

Polarization switching induced decrease of bulk resistivity in ferroelectric Pb(Zr0.45Ti0.55)O3 thin films and a method to improve their fatigue endurance

Significant reduction of the bulk resistivity in a ferroelectric Pb(Zr 0.45Ti0.55)O3 thin film is observed before the remnant polarization started to decrease noticeably at the onset of its fatigue switching process. It is associated with the increase of charge carriers within the central bulk region of the film. The decrease of bulk resistivity would result in the increase of Joule heating effect, improving the temperature of the thin film, which is evaluated by the heat conduction analysis. The Joule heating effect in turn accelerates the polarization reduction, i.e. fatigue. Enhancing the heat dissipation of a ferroelectric capacitor is shown to be able to improve the device's fatigue endurance effectively. © 2013 Chinese Physical Society and IOP Publishing Ltd.

Nitrogen dynamics in large shallow eutrophic Lake Chaohu, China

Temporal and spatial dynamics of nitrogen in lake and interstitial water were studied monthly in a large shallow, eutrophic lake in subtropical China from October 2002 to September 2003. The distribution of nitrogen was consistent with the idea that high nitrogen concentrations in the western part of the lake resulted from high levels of the nutrients from the surrounding cities through sewage-drainage systems. Nitrate was the predominant form of nitrogen in the overlying water, while ammonium was predominant in the interstitial water, indicating that strong oxidative nutrient regeneration occurred near the sediment-water interface. Nitrate could be an important dissolved inorganic matter source for phytoplankton, which in turn influenced the seasonal variations of nitrate concentrations in lake water. Significant positive correlation between ammonium fluxes and water temperature was observed and could probably be attributed to the intensified ammonification and nitrate reduction with increased temperature. Positive correlation between ammonium fluxes and algae biomass and Chl a concentrations may indicate that phytoplankton was an important factor driving ammonium fluxes in our study lake, and vice versa that higher fluxes of ammonium supported a higher biomass of the phytoplankton.

Stable carbon isotope variations in surface bloom scum and subsurface seston among shallow eutrophic lakes

Carbon stable isotope analysis of surface bloom scum and subsurface seston samples was conducted in shallow eutrophic lakes in China during warm seasons from 2003 to 2004. delta C-13 values of bloom scum were always higher (averaged 5 parts per thousand) than those of seston in this study, and the possible reasons were attributed to (i) direct use of atmospheric CO2 at the air-water interface, (ii) decrease in C-13 fractionation due to higher carbon fixation, (iii) active CO2 transport, and/or (iv) HCO3 accumulation. Negative correlation between delta C-13(scum) - delta C-13(seston) and pH in the test lakes indicated that phytoplankton at the subsurface water column increased isotopic enrichment under the-carbon limitation along with the increase of pH, which might in turn decreased the differences in 313 C between the subsurface seston and the surface scums. Significant positive correlations of seston 8 13C with total concentrations of nitrogen and phosphorus in water column suggested that the increase in delta C-13 of seston with trophic state was depending on nutrient (N or P, or both) supply. Our study showed that delta C-13 of phytoplankton was indicative of carbon utilization, primary productivity, and nutrient supply among the eutrophic lakes. (C) 2007 Elsevier B.V All rights reserved.

Androgen receptor targets NFKB and TSPI to suppress prostate tumor growth in vivo

The androgen role in the maintenance of prostate epithelium is subject to conflicting opinions. While androgen ablation drives the regression of normal and cancerous prostate, testosterone may cause both proliferation and apoptosis. Several investigators note decreased proliferation and stronger response to chemotherapy of the prostate cancer cells stably expressing androgen receptor (AR), however no mechanistic explanation was offered. In this paper we demonstrate in vivo anti-tumor effect of the AR on prostate cancer growth and identify its molecular mediators. We analyzed the effect of AR on the tumorigenicity of prostate cancer cells. Unexpectedly, the AR-expressing cells formed tumors in male mice at a much lower rate than the AR-negative controls. Moreover, the AR-expressing tumors showed decreased vascularity and massive apoptosis. AR expression lowered the angiogenic potential of cancer cells, by increasing secretion of an anti-angiogenic protein, thrombospondin-1. AR activation caused a decrease in RelA, a subunit of the pro-survival transcription factor NF kappa B, reduced its nuclear localization and transcriptional activity. This, in turn, diminished the expression of its anti-apoptotic targets, Bcl-2 and IL-6. Increased apoptosis within AR-expressing tumors was likely due to the NF kappa B suppression, since it was restricted to the cells lacking nuclear (active) NF kappa B. Thus we for the first time identified combined decrease of NF kappa B and increased TSP1 as molecular events underlying the AR anti-tumor activity in vivo. Our data indicate that intermittent androgen ablation is preferable to continuous withdrawal, a standard treatment for early-stage prostate cancer. (C) 2007 Wiley-Liss, Inc.

Twitching in sensorimotor development from sleeping rats to robots.

It is still not known how the 'rudimentary' movements of fetuses and infants are transformed into the coordinated, flexible and adaptive movements of adults. In addressing this important issue, we consider a behavior that has been perennially viewed as a functionless by-product of a dreaming brain: the jerky limb movements called myoclonic twitches. Recent work has identified the neural mechanisms that produce twitching as well as those that convey sensory feedback from twitching limbs to the spinal cord and brain. In turn, these mechanistic insights have helped inspire new ideas about the functional roles that twitching might play in the self-organization of spinal and supraspinal sensorimotor circuits. Striking support for these ideas is coming from the field of developmental robotics: when twitches are mimicked in robot models of the musculoskeletal system, the basic neural circuitry undergoes self-organization. Mutually inspired biological and synthetic approaches promise not only to produce better robots, but also to solve fundamental problems concerning the developmental origins of sensorimotor maps in the spinal cord and brain.

Estradiol stimulates growth hormone production in female goldfish

The effects of estradiol (E(2)) on growth hormone (GH) production was investigated in gonad-intact female goldfish. It was first necessary to generate a specific antibody for use in immunocytochemistry, Western, and dot-blot analyses of GH production. To accomplish this, grass carp GH (gcGH) cDNA was cloned by the reverse transcription polymerase chain reaction (RT-PCR) and expressed in Echerichia coli and a specific polyclonal antibody to recombinant gcGH was generated in the rabbit. In Western blot, the anti-gcGH antibody specifically immunoreacted with recombinant gcGH, purified natural common carp GH, and with a single 21.5-kDa GH form from pituitary extracts of grass carp, common carp, goldfish, and zebrafish but not salmon, trout, or tilapia. Intraperitoneal injection of the recombinant gcGH enhanced the growth rates of juvenile common carp demonstrating biological activity of this GH preparation. Electron microscopic studies showed that the anti-gcGH-I antibody specifically reacted with GH localized in the secretory granules of the goldfish somatotroph. Using anti-gcGH-I in a dot-blot assay, it was found that in vivo implantation of solid silastic pellets containing E(2) (100 mu g/g body weight for 5 days) increased pituitary GH content by 150% in female goldfish. In a second, independent study employing a previously characterized anticommon carp GH antibody for radioimmunoassay, it was found that E(2) increased pituitary GH content by 170% and serum GH levels by approximately 350%. The E(2)-induced hypersecretion of GH and increase in pituitary GH levels was not associated with changes in steady-state pituitary GH mRNA levels, suggesting that this sex steroid may enhance GH synthesis at the posttranscriptional or translational level. Previous observations indicate that GH can stimulate ovarian E(2) production. The present results show that E(2) can in turn stimulate GH production, indicating the existence of a novel pituitary GH-ovarian feedback system in goldfish. (C) 1997 Academic Press.

Electroluminescence from nano-crystalline Si/SiO2 structures embedded in pn junctions

Phosphorous-doped and boron-doped amorphous Si thin films as well as amorphous SiO2/Si/SiO2 sandwiched structures were prepared in a plasma enhanced chemical vapor deposition system. Then, the p-i-n structures containing nano-crystalline Si/SiO2 sandwiched structures as the intrinsic layer were prepared in situ followed by thermal annealing. Electroluminescence spectra were measured at room temperature under forward bias, and it is found that the electroluminescence intensity is strongly influenced by the types of substrate. The turn-on voltages can be reduced to 3 V for samples prepared on heavily doped p-type Si (p(+)-Si) substrates and the corresponding electroluminescence intensity is more than two orders of magnitude stronger than that on lightly doped p-type Si (p-Si) and ITO glass substrates. The improvements of light emission can be ascribed to enhanced hole injection and the consequent recombination of electron-hole pairs in the luminescent nanocrystalline Si/SiO2 system. (C) 2008 Elsevier Ltd. All rights reserved.

Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering

Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 V/mu m (about 2.5 V/mu m for the undoped ZnO films) is obtained at an emission current density of 1 mu A/cm(2) and the stable current density reaches 1 mA/cm(2) at an applied field of about 2.1 V/mu m. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.

Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.

Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires

The alloy formation enthalpy and band structure of InGaN nanowires were studied by a combined approach of the valence-force field model, Monte Carlo simulation, and density-functional theory (DFT). For both random and ground-state structures of the coherent InGaN alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. We proposed an analytical formula for computing the band gap of any InGaN nanowires based on the results from the screened exchange hybrid DFT calculations, which in turn reveals a better band-gap tunability in ternary InGaN nanowires than the bulk alloy.

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

Magnetization of two-dimensional heavy holes with boundaries in a perpendicular magnetic field

The magnetisation of heavy holes in III-V semiconductor quantum wells with Rashba spin-orbit coupling (SOC) in an external perpendicular magnetic field is studied theoretically. We concentrate on the effects on the magnetisation induced by the system boundary, the Rashba SOC and the temperature. It is found that the sawtooth-like de Haas-van Alphen (dHvA) oscillations of the magnetisation will change dramatically in the presence of such three factors. Especially, the effects of the edge states and Rashba SOC on the magnetisation are more evident when the magnetic field is smaller. The oscillation center will shift when the boundary effect is considered and the Rashba SOC will bring beating patterns to the dHvA oscillations. These effects on the dHvA oscillations are preferably observed at low temperatures. With increasing temperature, the dHvA oscillations turn to be blurred and eventually disappear.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.