CMOS compatible RF MEMS switches with serpentine springs

This paper describes a serpentine flexure spring design and fabrication process development for radio frequency microelectromechanical (RF MEMS) capacitive switches with coplanar waveguide (CPW) lines. Sputtered tungsten is employed as the CPW line conductor instead of Au, a non-Si compatible material. The bridge membrane is fabricated from Al. The materials and fabrication process can be integrated with CMOS and SOI technology to reduce cost. Results show the MEMS switch has excellent performance with insertion loss 0.3dB, return loss -27dB at 30GHz and high isolation -30dB at 40GHz. The process developed promises to simplify the design and fabrication of RF MEMS on silicon.

How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?

In the present work, by investigating the influence of source/drain (S/D) extension region engineering (also known as gate-underlap architecture) in planar Double Gate (DG) SOI MOSFETs, we offer new design insights to achieve high tolerance to gate misalignment/oversize in nanoscale devices for ultra-low-voltage (ULV) analog/rf applications. Our results show that (i) misaligned gate-underlap devices perform significantly better than DC devices with abrupt source/drain junctions with identical misalignment, (ii) misaligned gate underlap performance (with S/D optimization) exceeds perfectly aligned DG devices with abrupt S/D regions and (iii) 25% back gate misalignment can be tolerated without any significant degradation in cut-off frequency (f(T)) and intrinsic voltage gain (A(VO)). Gate-underlap DG devices designed with spacer-to-straggle ratio lying within the range 2.5 to 3.0 show best tolerance to misaligned/oversize back gate and indeed are better than self-aligned DG MOSFETs with non-underlap (abrupt) S/D regions. Impact of gate length and silicon film thickness scaling is also discussed. These results are very significant as the tolerable limit of misaligned/oversized back gate is considerably extended and the stringent process control requirements to achieve self-alignment can be relaxed for nanoscale planar ULV DG MOSFETs operating in weak-inversion region. The present work provides new opportunities for realizing future ULV analog/rf design with nanoscale gate-underlap DG MOSFETs. (C) 2008 Elsevier Ltd. All rights reserved.

Impact of gate-source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

In this work, we report on the significance of gate-source/drain extension region (also known as underlap design) optimization in double gate (DG) FETs to improve the performance of an operational transconductance amplifier (OTA). It is demonstrated that high values of intrinsic voltage gain (A(VO_OTA)) > 55 dB and unity gain frequency (f(T_OTA)) similar to 57 GHz in a folded cascode OTA can be achieved with gate-underlap channel design in 60 nm DG MOSFETs. These values correspond to 15 dB improvement in A(VO_OTA) and three fold enhancement in f(T_OTA) over a conventional non-underlap design. OTA performance based on underlap single gate SOI MOSFETs realized in ultra-thin body (UTB) and ultra-thin body BOX (UTBB) technologies is also evaluated. A(VO_OTA) values exhibited by a DG MOSFET-based OTA are 1.3-1.6 times higher as compared to a conventional UTB/UTBB single gate OTA. f(T_OTA) values for DG OTA are 10 GHz higher for UTB OTAs whereas a twofold improvement is observed with respect to UTBB OTAs. The simultaneous improvement in A(VO_OTA) and f(T_OTA) highlights the usefulness of underlap channel architecture in improving gain-bandwidth trade-off in analog circuit design. Underlap channel OTAs demonstrate high degree of tolerance to misalignment/oversize between front and back gates without compromising the performance, thus relaxing crucial process/technology-dependent parameters to achieve 'idealized' DG MOSFETs. Results show that underlap OTAs designed with a spacer-to-straggle (s/sigma) ratio of 3.2 and operated below a bias current (IBIAS) of 80 mu A demonstrate optimum performance. The present work provides new opportunities for realizing future ultra-wide band OTA design with underlap DG MOSFETs.

Non Classical Design in MOSFETs for Improving OTA gain-bandwidth trade off

In this paper, gain-bandwidth (GB) trade-off associated with analog device/circuit design due to conflicting requirements for enhancing gain and cutoff frequency is examined. It is demonstrated that the use of a nonclassical source/drain (S/D) profile (also known as underlap channel) can alleviate the GB trade-off associated with analog design. Operational transconductance amplifier (OTA) with 60 nm underlap S/D MOSFETs achieve 15 dB higher open loop voltage gain along with three times higher cutoff frequency as compared to OTA with classical nonunderlap S/D regions. Underlap design provides a methodology for scaling analog devices into the sub-100 nm regime and is advantageous for high temperature applications with OTA, preserving functionality up to 540 K. Advantages of underlap architecture over graded channel (GC) or laterally asymmetric channel (LAC) design in terms of GB behavior are demonstrated. Impact of transistor structural parameters on the performance of OTA is also analyzed. Results show that underlap OTAs designed with spacer-to-straggle ratio of 3.2 and operated below a bias current of 80 microamps demonstrate optimum performance. The present work provides new opportunities for realizing future ultra wide band OTA design with underlap DG MOSFETs in silicon-on-insulator (SOI) technology. Index Terms—Analog/RF, double gate, gain-bandwidth product, .

Erfahrungen, Orte, Aufenthalte und die Sorge um das Selbst

This article deals with Paul Celans relation to Europe and his version of the 'souci de soi' (Foucault).

Le survivant de la Shoah face au texte de fiction: un écran protecteur ou un écran projecteur? L’exemple d’Anna Langfus

La terminologie ‘écriture écran’ est souvent utilisée dans un sens proche de celui que lui donne Annie Ernaux lorsqu’elle écrit que ‘la fiction protège’ en permettant à un auteur de dire tout en gardant le lecteur à distance. Pourtant, de Blanchot à Genette, de nombreux critiques ont souligné que le texte est par essence un espace qui n’existe que dans et par cet échange, le lecteur – surtout dans le cas des textes de fiction – devant s’investir, se projeter dans le texte lu. Le texte de fiction serait-il donc un écran protecteur pour celui qui tient la plume et un écran projecteur pour celui qui tient le livre ? En nous basant principalement sur des textes de la psychanalyste Rachel Rosenblum et de l’auteure et survivante de la Shoah Anna Langfus, nous suggèrerons que, pour l’auteur comme pour le lecteur, le texte de fiction est à la fois un écran protecteur et un écran projecteur, ces deux fonctions étant étroitement liées et nullement contradictoires. Nous montrerons en effet qu’aucun genre n’est a priori protecteur puisque c’est l’acte de lecture ou d’écriture qui peut se transformer en morbide compulsion de répétition quand la mémoire d’un lecteur ou d’un auteur est devenue pathologique.

RADIATIVE SIGNATURES OF RELATIVISTIC SHOCKS

Particle-in-cell simulations of relativistic, weakly magnetized collisionless shocks show that particles can gain energy by repeatedly crossing the shock front. This requires scattering off self-generated small length-scale magnetic fluctuations. The radiative signature of this first-order Fermi acceleration mechanism is important for models of both the prompt and afterglow emission in gamma-ray bursts and depends on the strength parameter a = lambda e/delta B/mc(2) of the fluctuations (lambda is the length scale and vertical bar delta B vertical bar is the magnitude of the fluctuations). For electrons (and positrons), acceleration saturates when the radiative losses produced by the scattering cannot be compensated by the energy gained on crossing the shock. We show that this sets an upper limit on both the electron Lorentz factor gamma <10(6) (n/1 cm(-3))(-1/6)(-1/6) and on the energy of the photons radiated during the scattering process h omega(max) <40Max(a, 1)(n/1 cm(-3))(1/6)(-1/6) eV, where n is the number density of the plasma and (gamma) over bar is the thermal Lorentz factor of the downstream plasma, provided a <a(crit) similar to 10(6). This rules out "jitter" radiation on self-excited fluctuations with a <I as a source of gamma rays, although high-energy photons might still be produced when the jitter photons are upscattered in an analog of the synchrotron self-Compton process. In fluctuations with a > 1, radiation is generated by the standard synchrotron mechanism, and the maximum photon energy rises linearly with a, until saturating at 70 MeV, when a = a(crit).

Microneedle characterisation: the need for universal acceptance criteria and GMP specifications when moving towards commercialisation

With interest in microneedles as a novel drug transdermal delivery system increasing rapidly since the late 1990s (Margetts and Sawyer Contin Educ Anaesthesia Crit Care Pain. 7(5):171-76, 2007), a diverse range of microneedle systems have been fabricated with varying designs and dimensions. However, there are still very few commercially available microneedle products. One major issue regarding microneedle manufacture on an industrial scale is the lack of specific quality standards for this novel dosage form in the context of Good Manufacturing Practice (GMP). A range of mechanical characterisation tests and microneedle insertion analysis techniques are used by researchers working on microneedle systems to assess the safety and performance profiles of their various designs. The lack of standardised tests and equipment used to demonstrate microneedle mechanical properties and insertion capability makes it difficult to directly compare the in use performance of candidate systems. This review highlights the mechanical tests and insertion analytical techniques used by various groups to characterise microneedles. This in turn exposes the urgent need for consistency across the range of microneedle systems in order to promote innovation and the successful commercialisation of microneedle products.

As políticas educativas e o impacto no trabalho dos professores

A presente investigação, que tem os professores como figura central, constitui um trabalho de problematização sobre o impacto que as políticas educativas dos últimos dez anos têm tido na (re)definição da profissão e do trabalho docente. Num tempo marcado por rápidas e profundas mudanças económicas, políticas, sociais e culturais, os professores defrontam-se com novas situações, novos saberes e novas conceções pedagógicas. Por este motivo, impôs-se a preocupação académica de compreender o modo como os professores encaram a existência de novas exigências e dos desafios constantes com que são confrontados, lidam com eles, definem estratégias e finalidades de ação, enunciando os seus compromissos profissionais, os seus saberes e os modos de ser e de estar na profissão. Assim, a reflexão em torno das políticas educativas e do trabalho docente adquire uma importância inquestionável como uma problemática essencial para se compreender os sentidos da escola, das suas finalidades educativas e da ação dos professores. A investigação permitiu concluir que o Estado, agora avaliador, tende a abandonar o ideal de igualdades de oportunidades para o objetivo de igualdade dos resultados, onde sobressai o desenvolvimento de uma política educativa assente na lógica da eficácia e da competição. Concluiu-se, ainda, que a intensificação e a complexificação das tarefas que incumbem aos professores e o aumento exponencial de dispositivos burocráticos no exercício da profissão configuram a emergência de novas formas de governo e de controlo da profissão, contribuindo também para a sua desqualificação. Neste contexto, as relações profissionais que os docentes estabelecem entre si, o recentrar da escola na aprendizagem dos alunos e o conhecimento profissional dos professores são encarados pela autora como cruciais para a configuração de uma nova profissionalidade docente e para o desenvolvimento de perspetivas educacionais progressistas e emancipatórias. Foi intencional a opção por uma metodologia qualitativa, apoiada num paradigma que valoriza as vozes dos indivíduos que falam, quer o sujeito que, na sua qualidade de investigador, ouve ou lê a fala do narrador e a interpreta num encontro de subjetividades. Elegeu-se como estratégias de recolha de informação as entrevistas semiestruturadas e a aplicação de inquérito por questionário, na tentativa de recolher toda a riqueza subjetiva de quem neles se diz e de ultrapassar a velha aporia entre métodos quantitativos e qualitativos.

Os cadernos de escrita como mediadores da produção de textos por alunos do 1º CEB

O actual paradigma inclusivo associado a um enquadramento sociocultural da investigação em Didáctica reposiciona a escrita por iniciativa própria num referencial mais amplo, no qual o aprender a escrever se cruza com a relação com o (saber) escrever de todos os alunos. Neste enquadramento, torna-se possível conjugar a centralidade que a escrita ocupa (i) nos percursos escolares dos alunos, (ii) na definição das opções metodológicas dos professores e (iii) nas orientações programáticas estabelecidas para todo o ensino básico, confrontando-a com as características dos suportes de escrita utilizados em contexto escolar. Tais suportes são elementos essenciais porque constituem uma memória que viabiliza a partilha, a reformulação e a reflexão. É também nesse sentido que interpretamos o Programa de Língua Portuguesa para o 1.º Ciclo Ensino Básico quando propõe que cada aluno tenha «um caderno onde possa fazer tentativas de escrita, escrever como souber, o que quiser, quando quiser». Daí, a nossa opção por realizar uma investigação de cariz interpretativo centrada nas opções metodológicas do(s) professor(es) e na relação com a escrita subjacente às produções dos alunos, questionando os sentidos e as práticas perceptíveis na utilização de cadernos individuais de escrita no 1.º Ciclo do Ensino Básico. Os resultados obtidos junto de três turmas, ao longo do terceiro e quarto anos de escolaridade, destacam a diversidade de dinâmicas passíveis de serem estabelecidas em cada grupo e a expansão da gama de géneros de textos que, claramente, surge associada a uma crescente afirmação intencional do lugar dos alunos enquanto sujeitos que querem e sabem dizer de si, reflectindo acerca do seu próprio agir, entre pares.

Formation en intégration scolaire impact sur les connaissances d'une enseignante et sur le fonctiononement social d'élèves intégrés et ordinaires

La présente recherche a pour but d'évaluer l'impact d'une formation en intégration scolaire sur une enseignante et ses élèves.La formation en question est un programme universitaire de deuxième cycle dispensé à l'Université de Sherbrooke. Le projet actuel vise à mesurer les retombées des deux premières activités de cette formation, c'est-à-dire celles visant la problématique de l'intégration scolaire et la connaissance de la clientèle. Pour ce faire, l'estime de soi, le climat de classe et le fonctionnement social des élèves d'un groupe expérimental sont comparés à ceux d'un groupe contrôle dont l'enseignante n'a pas suivi la formation. Les données sont collectées à l'aide de questionnaires, d'une grille d'observation et d'un sociogramme. Afin de vérifier s'il y a un changement au niveau de la connaissance des clientèles en difficulté, les deux enseignantes remplissent un questionnaire au début et à la fin de la deuxième activité de formation. Les différentes mesures adressées aux élèves sont collectées après l'activité de formation en question. (Résumé abrégé par UMI.)