Fabrication of device quality films of high loaded PPy/MWCNT nanocomposites using pulsed laser deposition

Polypyrrole (PPy) - multiwalled carbonnanotubes (MWCNT) nanocomposites with various MWCNT loading were prepared by in situ inversion emulsion polymerization technique. High loading of the nano filler were evaluated because of available inherent high interface area for charge separation in the nanocomposites. Solution processing of these conducting polymer nanocomposites is difficult because, most of them are insoluble in organic solvents. Device quality films of these composites were prepared by using pulsed laser deposition techniques (PLD). Comparative study of X-ray photoelectron spectroscopy (XPS) of bulk and film show that there is no chemical modification of polymer on ablation with laser. TEM images indicate PPy layer on MWCNT surface. SEM micrographs indicate that the MWCNT's are distributed throughout the film. It was observed that MWCNT in the composite held together by polymer matrix. Further more MWCNT diameter does not change from bulk to film indicating that the polymer layer remains intact during ablation. Even for very high loadings (80 wt.% of MWCNT's) of nanocomposites device quality films were fabricated, indicating laser ablation is a suitable technique for fabrication of device quality films. Conductivity of both bulk and films were measured using collinear four point probe setup. It was found that overall conductivity increases with increase in MWCNT loading. Comparative study of thickness with conductivity indicates that maximum conductivity was observed around 0.2 mu m. (C) 2010 Elsevier B.V. All rights reserved.

Optical nonlinearity in lead sulfide microtowers

Lead sulfide (PbS) microtowers on silicon substrates, having the physical properties of bulk PbS, have been synthesized. Optical nonlinearity studies using the open aperture z-scan technique employing 5 ns and 100 fs laser pulses reveal effective two-photon type absorption. For nanosecond excitation the nonlinear absorption coefficients (beta(eff)) are in the order of 10(-11) m W-1, two orders of magnitude less than the values reported for quantum confined PbS nanocrystals. For femtosecond excitation beta(eff) is of the order of 10(-14) m W-1. These results obtained in bulk PbS experimentally confirm the importance of quantum confinement in the enhancement of optical nonlinearities in semiconductor materials.

High-temperature dielectric response in pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films

Cubic pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films were deposited by pulsed laser ablation on Pt(200)/SiO2/Si at 500, 550, 600, and 650 degrees C. The thin films with (222) preferred orientation were found to grow at 650 degrees C with better crystallinity which was established by the lowest full-width half maxima of similar to 0.38. The dielectric response of the thin films grown at 650 degrees C have been characterized within a temperature range of 270-650 K and a frequency window of 0.1-100 kHz. The dielectric dispersion in the thin films shows a Maxwell-Wagner type relaxation with two different kinds of response confirmed by temperature dependent Nyquist plots. The ac conduction of the films showed a varied behavior in two different frequency regions. The power law exponent values of more than 1 at high frequency are explained by a jump-relaxation-model. The possibility of grain boundary related large polaronic hopping, due to two different power law exponents and transformation of double to single response in Nyquist plots at high temperature, has been excluded. The ``attempt jump frequency'' obtained from temperature dependent tangent loss and real part of dielectric constants, has been found to lie in the range of their lattice vibronic frequencies (10(12)-10(13) Hz). The activation energy arising from a large polaronic hopping due to trapped charge at low frequency region has been calculated from the ac conduction behavior. The range of activation energies (0.26-0.59. eV) suggests that the polaronic hopping at low frequency is mostly due to oxygen vacancies. (C) 2010 American Institute of Physics. doi:10.106311.3457335]

Graphene analogue BCN: Femtosecond nonlinear optical susceptibility and hot carrier dynamics

Third-order nonlinear absorption and refraction coefficients of a few-layer boron carbon nitride (BCN) and reduced graphene oxide (RGO) suspensions have been measured at 3.2 eV in the femtosecond regime. Optical limiting behavior is exhibited by BCN as compared to saturable absorption in RGO. Nondegenerate time-resolved differential transmissions from BCN and RGO show different relaxation times. These differences in the optical nonlinearity and carrier dynamics are discussed in the light of semiconducting electronic band structure of BCN vis-a-vis the Dirac linear band structure of graphene. (C) 2010 Elsevier B.V. All rights reserved.

Effect of substrate roughness on growth of diamond by hot filament CVD

Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0.05 mu m to 0.91 mu m (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of sp (3) to non-sp (3) content increases from 1.65 to 7.13) and the substrate temperature can be brought down to 640A degrees C without any additional substrate heating. The coatings grown at adverse conditions for sp (3) deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable sp (3) condition gives clear faceted grains.

Applications of reverse saturable absorbers in laser science

A variety of applications exist for reverse saturable absorbers (RSAs) in the area of optical pulse processing and computing. An RSA can be used as power limiter/pulse smoother and energy limiter/pulse shortner of laser pulses. A combination of RSA and saturable absorber (SA) can be used for mode locking and pulse shaping between high power laser amplifiers in oscillator amplifier chain. Also, an RSA can be used for the construction of a molecular spatial light modulator (SLM) which acts as an input/output device in optical computers. A detailed review of the theoretical studies of these processes is presented. Current efforts to find RSAs at desired wavelength for testing these theoretical predictions are also discussed.

Nanomechanical properties of silicon surfaces nanostructured by excimer laser

Excimer laser irradiation at ambient temperature has been employed to produce nanostructured silicon surfaces. Nanoindentation was used to investigate the nanomechanical properties of the deformed surfaces as a function of laser parameters, such as the angle of incidence and number of laser pulses at a fixed laser fluence of 5 J cm(-2). A single-crystal silicon 311] surface was severely damaged by laser irradiation and became nanocrystalline with an enhanced porosity. The resulting laser-treated surface consisted of nanometer-sized particles. The pore size was controlled by adjusting the angle of incidence and the number of laser pulses, and varied from nanometers to microns. The extent of nanocrystallinity was large for the surfaces irradiated at a small angle of incidence and by a high number of pulses, as confirmed by x-ray diffraction and Raman spectroscopy. The angle of incidence had a stronger effect on the structure and nanomechanical properties than the number of laser pulses.

Atomic fountain of laser-cooled Yb atoms for precision measurements

We demonstrate launching of laser-cooled Yb atoms in a cold atomic fountain. Atoms in a collimated thermal beam are first cooled and captured in a magneto-optical trap (MOT) operating on the strongly allowed S-1(0) -> P-1(1) transition at 399 nm (blue line). They are then transferred to a MOT on the weakly allowed S-1(0) -> P-3(1) transition at 556 nm (green line). Cold atoms from the green MOT are launched against gravity at a velocity of around 2.5 m/s using a pair of green beams. We trap more than 107 atoms in the blue MOT and transfer up to 70% into the green MOT. The temperature for the odd isotope Yb-171 is similar to 1 mK in the blue MOT, and reduces by a factor of 40 in the green MOT.

Laser-fused refractory oxides for optical coatings

Laser sintering was carried out using a high power continuous-wave CO2 laser to prepare pellets of zirconia (ZrO2), hafnia (HfO2) and yttria (Y2O3) mixed oxides as starting materials in the deposition of optical coatings. Hardened recrystallized pellets appeared to have been formed during laser treatment. X-ray diffraction analysis revealed a monoclinic-to-tetragonal phase transformation in the binary system while the ternary system was found to have a mixture of two crystalline phases. Cross-sectional scanning electron microscopy showed two isothermal crystalline regions in the ternary system. The optical inhomogeneity was low in the films deposited from the laser-fused pellets, but the absorption at a wavelength of 351 nm increased with increasing HfO2 content. The films deposited from laser-fused pellets were analysed by electron spectroscopy for chemical analysis and found to be stoichiometric and homogeneous.

Power extraction studies in a gasdynamic laser

A generalized two‐dimensional flow‐radiation coupled model to extract power from a gasdynamic laser is proposed. The model is used for the study of power extraction from a 9.4‐μm CO2 downstream‐mixing gasdynamic laser, where a cold CO2+H2 stream is mixed with a vibrationally excited N2 stream at the nozzle exits. This model is developed by coupling radiation with the two‐dimensional, unsteady, laminar and viscous flow modeling needed for such systems. The analysis showed that the steady‐state value of 9.4‐μm intensity as high as 5×107 W/m2 can be obtained from the system studied. The role of H2 relaxant in the power extraction process has also been investigated.

Large-amplitude chirped coherent phonons in tellurium mediated by ultrafast photoexcited carrier diffusion

We report femtosecond time-resolved reflectivity measurements of coherent phonons in tellurium performed over a wide range of temperatures (3-296 K) and pump-laser intensities. A totally symmetric A(1) coherent phonon at 3.6 THz responsible for the oscillations in the reflectivity data is observed to be strongly positively chirped (i.e., phonon time period decreases at longer pump-probe delay times) with increasing photoexcited carrier density, more so at lower temperatures. We show that the temperature dependence of the coherent phonon frequency is anomalous (i.e, increasing with increasing temperature) at high photoexcited carrier density due to electron-phonon interaction. At the highest photoexcited carrier density of (1.4 x 10(21) cm(-3) and the sample temperature of 3 K, the lattice displacement of the coherent phonon mode is estimated to be as high as similar to 0.24 angstrom. Numerical simulations based on coupled effects of optical absorption and carrier diffusion reveal that the diffusion of carriers dominates the nonoscillatory electronic part of the time-resolved reflectivity. Finally, using the pump-probe experiments at low carrier density of 6 x 10(18) cm(-3), we separate the phonon anharmonicity to obtain the electron-phonon coupling contribution to the phonon frequency and linewidth.