Avaliação difratográfica da microestrutura de três resinas compostas submetidas à aplicação de um agente clareador a base de peróxido de hidrogênio

A odontologia moderna utiliza métodos e técnicas ultraconservadores no intuito de corrigir os diversos tipos de alterações cromáticas observadas clinicamente. Os meios empregados baseiam-se na utilização de substâncias químicas à base de peróxidos presentes em diversas concentrações. O presente estudo objetivou avaliar a microestrutura de três resinas compostas fotossensíveis submetidas à aplicação de um agente clareador a base de peróxido de hidrogênio a 35% (Whiteness HP Maxx - fabricante: FGM), ativado por uma fonte híbrida de energia luminosa (Aparelho de Laser-Led Whitening Lase, fabricante: DMC). Para isso, foram confeccionados 30 corpos de prova (CDP) 10 para cada grupo, no formato de discos, com 13 mm de diâmetro e 2,0 mm de espessura em uma matriz de teflon e aço inox, fotoativados por um aparelho de luz halógena convencional (Optilux 401 - Demetron/UR) por 40 segundos com densidade de potência média igual a 450 mW/cm2. Os grupos foram dispostos da seguinte forma: Grupo 1 - resina microparticulada (Durafill VS - fabricante: Heraeus Kulzer); Grupo 2 - resina micro-híbrida (Esthet-X - fabricante: Dentsply); e Grupo 3 resina nanoparticulada (Filtek Supreme XT fabricante: 3M ESPE). Todos os materiais restauradores utilizados eram da cor A2. Após serem submetidos à sequência de acabamento e polimento os CDP foram armazenados por sete dias em saliva artificial, limpos em ultra-som, envelhecidos artificialmente de acordo com a norma ASTM G 154. Os CDP dos três grupos foram aleatoriamente divididos em 2 subgrupos (ST sem tratamento e CT com tratamento) e finalmente submetidos aos experimentos. Os CDP dos subgrupos 1-ST, 2- ST e 3-ST foram triturados (SPEX SamplePrep 8000-series, marca: Mixer/Mills) seguido pela verificação dos materiais por meio de um espectrômetro (marca/modelo: Shimadzu EDX 720) para certificação da ausência de elementos pertencentes ao meio de moagem e por fim foram levados a um difrator de raios-X (marca / modelo: Philips -PW 3040 -X'Celerator- 40kV; 30mA; (λ): CuKα; 0,6; 0,2mm; 0,05 (2θ); 2s; 10-90 (2θ). Em seguida os CDP dos subgrupos 1-CT, 2- CT e 3-CT foram tratados com o peróxido de hidrogênio de acordo com o protocolo do fabricante para a fonte híbrida luminosa de energia selecionada, totalizando 9 aplicações de 10 minutos, onde eram respeitados os tempos de 3 minutos de ativação por 20 segundos de descanso, finalizando 10 minutos em cada aplicação. Mediante a este tratamento, os CDP dos subgrupos CT eram verificados e avaliados pelo mesmo método descrito anteriormente. Após interpretação gráfica, análise comparativa por meio do processamento digital das imagens no programa KS400 3.0 (Carl Zeiss Vision) e análise de concordância por cinco avaliadores calibrados utilizando um escore, pôde-se concluir que houve degradação estrutural e que as estruturas cristalinas das resinas estudadas foram afetadas de forma distinta quando tratadas pelo peróxido de hidrogênio; onde observou-se que: Grupo 1 > Grupo 3 > Grupo 2. Foi sugerido a realização de novos estudos, relacionados à interação do peróxido de hidrogênio às resinas compostas.

Comparação in vitro do desgaste dental em função da dureza de três diferentes tipos de materiais antagonistas

O objetivo deste estudo foi comparar in vitro o desgaste dental de pré-molares (PM) e molares (M) e sua relação com o valor de dureza Vickers dos materiais utilizados como antagonistas em uma máquina de abrasão simulada para provocar o desgaste nos dentes testados. Os materiais antagonistas utilizados foram VeraBond II (liga de Ni-Cr), Solidex (resina composta) e IPS Empress 2 (cerâmica). Para cada ensaio de dureza, foram preparados seis corpos-de-prova de cada material, os quais foram polidos sob refrigeração, com ciclo de 20 min para cada granulação. Num microdurômetro (HMV-2), foram realizadas três mossas por quadrante, cada uma sob carga de 19,614 N por 30 s, totalizando 12 mossas de base quadrada com ângulo de 136 entre os planos. O teste de abrasão foi realizado numa máquina simuladora de abrasão, freqüência de 265 ciclos/min e 4,4 Hz, com um percurso do antagonista de 10 mm à velocidade de 88 mm/s. Cada dente foi testado em oposição a um antagonista (foram 6 pares dente/material para cada grupo), em água deionizada, sob carga de 5 N, por 150 min, num total de 39.750 ciclos. Foram utilizados dezenove dentes 1 pré-molares, dezenove 3 molares e confeccionados doze antagonistas em cada material em forma de pastilha. Cada grupo de seis dentes foi testado em oposição a seis antagonistas do mesmo material. Ademais, um dente 1 pré-molar (PM) e um dente 3 molar (M) foram testados em oposição ao Plexiglass. Com relação ao desgaste do esmalte dentário (PM+M) segundo o material antagonista, o teste de Kruskal-Wallis evidenciou diferença significativa com p-valor < 0,001 e o teste de Mann-Whitney evidenciou diferença significativa nas comparações PM+M/resina X PM+M/metal (p-valor < 0,001), PM+M/resina X PM+M/cerâmica (p-valor < 0,001) e PM+M/metal X PM+M/cerâmica (p-valor = 0,002). A análise isolada, considerando pré-molares e molares separadamente, encontrou diferença significativa em relação ao desgaste do esmalte dentário no teste de Kruskall-Wallis, porém não detectou diferença significativa no teste de comparação múltipla Mann-Whitney quando comparou o desgaste sofrido pelo PM/metal em relação ao PM/cerâmica. Em relação à dureza Vickers detectou-se diferença significativa da dureza dos materiais no teste de Kruskall-Wallis (p-valor < 0,001) e também no teste de Mann-Whitney nas comparações múltiplas com p-valor = 0,002. Comparando-se a dureza com a perfilometria, observou-se uma correlação estatisticamente significativa (p ≤ 0,05) na correlação negativa (ρ= -0,829) entre a dureza do metal como material antagonista e o desgaste do esmalte dentário do dente molar. Os resultados sugeriram que todo material restaurador indireto estudado causou desgaste ao esmalte dentário quando submetido a forças de simulação de abrasão com carga. Embora tenha sido observada correlação entre dureza e resistência à abrasão, essa correlação foi pouco significativa.

Effect of wavelength of sensitizing light on holographic storage properties in LiNbO3 : Fe : Ni crystal

By sensitizing with 514 nm green light, 488 nm blue light and 390 nm ultraviolet light, respectively, recording with 633 nm red light, effect of wavelength of sensitizing light on holographic storage properties in LiNbO3:Fe:Ni crystal is investigated in detail. It is shown that by shortening the wavelength of sensitizing light gradually, nonvolatile holographic recording properties of oxidized LiNbO3:Fe:Ni crystal is optimized gradually, 390 nm ultraviolet light is the best as the sensitizing light. Considering the absorption of sensitizing light, to obtain the best performance in two-center holographic recording we must choose a sensitizing wavelength that is long enough to prevent unwanted absorptions (band-to-band, etc.) and short enough to result in efficient sensitization from the deep traps. So in practice a trade-off is always needed. Explanation is presented theoretically. (c) 2005 Elsevier GmbH. All rights reserved.

Electro-optic modulation of light propagating near the optic axis with any polarization in uniaxial crystals

The electro-optic effect in uniaxial crystals for light propagating near the optic axis with any polarization has been analyzed. The passive and the electrically induced birefringences and the rotation of polarization direction in crystals have been calculated, and the conoscopic interference figures under orthogonal polariscopes for different polarizer directions have been plotted. The extinction areas caused by the rotation of polarization direction in crystals change with the polarizer direction, but the two heads of the induced optical axes do not vary, which are always on the induced principal axis with bigger refractive index. The directions of polariscopes are always extinction, and the +/- 45 degrees directions with polarizer are always complete transmission. The conoscopic interference figures for LiNbO3 crystals have been demonstrated experimentally by rotating polariscopes directions, which accord with the theoretically calculating plots. (c) 2006 Elsevier GmbH. All rights reserved.

Energy loss of light ions channeling in silicon

Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the <110>, <111>, and <211> axial directions, and the {100}, {110}, {111}, and {211} planar directions. A .05% resolution automatically controlled magnetic spectrometer was used. The data are presented graphically along with an extensive summary of data in the literature. The data taken cover a wider range of channels than has previously been examined, and are in agreement with the data of F. Eisen, et al., Radd. Eff. 13, 93 (1972).

The theory in the literature for channeling energy loss due to interaction with local electrons, core electrons, and distant valence electrons of the crystal atoms is summarized. Straggling is analyzed, and a computer program which calculates energy loss and straggling using this theory and the Moliere approximation to the Thomas Fermi potential, V_TF, and the detailed silicon crystal structure is described. Values for the local electron density Z_loc in each of the channels listed above are extracted from the data by graphical matching of the experimental and computer results.

Zeroth and second order contributions to Z_loc as a function of distance from the center of the channel were computed from ∇²V_TF = 4πρ for various channels in silicon. For data taken in this work and data of F. Eisen, et al., Rad. Eff. 13, 93 (1972), the calculated zeroth order contribution to Z_loc lies between the experimentally extracted Z_loc values obtained by using the peak and the leading edge of the transmission spectra, suggesting that the observed straggling is due both to statistical fluctuations and to path variation.

A study of T=1, T=3/2, and T=2 states in some light nuclei using (He^3,n) reactions

The (He³, n) reactions on B¹¹, N¹⁵, O¹⁶, and O¹⁸ targets have been studied using a pulsed-beam time-of-flight spectrometer. Special emphasis was placed upon the determination of the excitation energies and properties of states with T = 1 (in Ne¹⁸), T = 3/2 (in N¹³ and F¹⁷) and T = 2 (in Ne²⁰). The identification of the T = 3/2 and T = 2 levels is based on the structure of these states as revealed by intensities and shapes of angular distributions. The reactions are interpreted in terms of double stripping theory. Angular distributions have been compared with plane and distorted wave stripping theories. Results for the four reactions are summarized below:

1) O¹⁶ (He³, n). The reaction has been studied at incident energies up to 13.5 MeV and two previously unreported levels in Ne¹⁸ were observed at E_x = 4.55 ± .015 MeV (Γ = 70 ± 30 keV) and E_x = 5.14 ± .018 MeV (Γ = 100 ± 40 keV).

2) B¹¹ (He³, n). The reaction has been studied at incident energies up to 13.5 MeV. Three T = 3/2 levels in N¹³ have been identified at E_x = 15.068 ± .008 MeV (Γ ˂ 15 keV), E_x = 18.44 ± .04, and E_x 18.98 ± .02 MeV (Γ = 40 ± 20 keV).

3) N¹⁵ (He³, n). The reaction has been studied at incident energies up to 11.88 MeV. T = 3/2 levels in F¹⁷ have been identified at E_x = 11.195 ± .007 MeV (Γ ˂ 20 keV), E_x = 12.540 ± .010 MeV (Γ ˂ 25 keV), and E_x = 13.095 ± .009 MeV (Γ ˂ 25 keV).

4) O¹⁸ (He³, n). The reaction has been studied at incident energies up to 9.0 MeV. The excitation energy of the lowest T = 2 level in Ne²⁰ has been found to be 16.730 ± .006 MeV (Γ ˂ 20 keV).

Angular distributions of the transitions leading to the above higher isospin states are well described by double stripping theory. Analog correspondences are established by comparing the present results with recent studies (t, p) and (He³, p) reactions on the same targets.

Characterization of birefringence dispersion in polarization-maintaining fibers by use of white-light interferometry

A new method for measuring the birefringence dispersion in polarization-maintaining fibers (PMFs) with high sensitivity and accuracy is presented. The method employs white-light interferences between two orthogonally polarized modes of PMFs. The group birefringence of the fiber is calibrated first. Then the birefringence dispersion and its variation along different fiber sections are acquired by analyzing the broadening of interferograms at different fiber lengths. The main sources of error are investigated. Bireffingence dispersions of two PANDA fibers at their operation wavelength are measured to be 0.011 ps/(km nm) and 0.018 ps/(km nm). A measurement repeatability of 0.001 ps/(km nm) is achieved. (C) 2007 Optical Society of America.

Wavelength dependence of light-induced domain nucleation in MgO-doped congruent LiNbO3 crystal

Within the wavelength range from 351 to 799 nm, the different reductions of nucleation field induced by the focused continuous laser irradiation are achieved in the 5 mol % MgO-doped congruent LiNbO3 crystals. The reduction proportion increases exponentially with decreasing irradiation wavelength and decreases exponentially with increasing irradiation wavelength. At one given wavelength, the reduction proportion increases exponentially with increasing irradiation intensity. An assumption is proposed that the reduction of nucleation field is directly related to the defect structure of crystal lattice generated by the complex coaction of incident irradiation field and external electric field. (c) 2007 American Institute of Physics.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.