Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Epitaxial growth of InN on GaN(0001) by plasma-assisted molecular-beam epitaxy is investigated over a range of growth parameters including source flux and substrate temperature. Combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM), we establish a relationship between film growth mode and the deposition condition. Both two-dimensional (2D) and three-dimensional (3D) growth modes of the film are observed. For 2D growth, sustained RHEED intensity oscillations are recorded while STM reveals 2D nucleation islands. For 3D growth, less than three oscillation periods are observed indicating the Stranski-Krastanov (SK) growth mode of the film. Simultaneous measurements of (reciprocal) lattice constant by RHEED suggest a gradual relaxation of the strain in film, which commences during the first bilayer (BL) deposition and almost completes after 2-4 BLs. For SK growth, 3D islanding initiates after the strain has mostly been relieved, presumably by dislocations, so the islands are likely strain free. (C) 2002 American Institute of Physics.

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy-hole exciton and light-hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy-hole exciton mode and light-hole exciton mode) in the three cavity polaritons increase or decrease.

Analysis of mode quality factors for equilateral triangle semiconductor microlasers with rough sidewalls

The eigenmode characteristics for equilateral triangle resonator (ETR) semiconductor microlasers are analysed by the finite-difference time-domain technique and the Pade approximation. The random Gaussian correlation function and sinusoidal function are used to model the side roughness of the ETR. The numerical results show that the roughness can cause the split of the degenerative modes, but the confined modes can still have a high quality factor. For the ETR with a 3 mum side length and the sinusoidal fluctuation, we can have a quality factor of 800 for the fundamental mode in the wavelength of 1500 nm, as the amplitude of roughness is 75 mn.

Simple method for estimating minimum bend radii of SOI single mode curved rib waveguides

A simple method based on the effective index method was used to estimate the minimum bend radii of curved SOI waveguides. An analytical formula was obtained to estimate the minimum radius of curvature at which the mode becomes cut off due to the side radiative loss.

Influence of output waveguide on mode quality factor in semiconductor microlasers with an equilateral triangle resonator

Semiconductor microlasers with an equilateral triangle resonator (ETR) and an output waveguide are proposed and analyzed by the finite-difference time-domain technique and the Pade approximation. The numerical results show that microlasers with an output waveguide still have a high-quality factor (Q factor) and are suitable to realize directional emission. For the ETR with a 0.46-mum-width opening in one of the vertices connected to the output waveguide, we have the Q factor of 1.5x10(3) and 2.5x10(2) for the TM fundamental mode at the wavelength of 1.55 mum, as the side length of the ETR is 5 and 3 mum. The simulated intensity distributions are presented for the fundamental mode in the ETR with a side length of 3 mum and an opening of 0.23 mum. (C) 2000 American Institute of Physics. [S0003-6951(00)01749-6].

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski-Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)01010-4].

Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

The transverse mode control in oxide confined vertical-cavity surface-emitting lasers is discussed by modeling the dielectric aperture as a uniform waveguide and an extra reflectivity at the oxide layer. The phase of the extra reflectivity and the refractive index step can be adjusted to change the mode threshold gain. We calculate the lateral refractive index step from the mode wavelength difference between aperture and perimeter modes, and compare it with that obtained from the weighted average index. The mode reflectivity in terms of the lateral optical confinement factor at the oxide layer is considered in calculating the threshold gain for transverse modes. The numerical results show that higher transverse modes can be suppressed by adjusting the position of a thin AlAs-oxide layer inside a three-quarter-wave layer in the distributed Bragg reflector. (C) 1998 American Institute of Physics. [S0021-8979(98)04007-9].

Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436

Single point defect microcavity possesses only the degenerate dipole modes under certain photonic crystal structure parameters. By deforming lattice structure, the degeneracy of the dipole modes has been broken. Theoretical simulation shows the large splitting of 65nm between the splitted x-mode and y-mode, approximate to the luminescent gain spectrum, which benefits for the single mode lasing. Experimentally the single dipole mode lasing, y-mode, is achieved in the deformed microcavity.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

The whispering gallery mode in photonic crystal ring cavity - art. no. 698438

Whispering gallery modes (WGMs) in microcavities possess ultra-high cavity Q factor. Such microcavity are easy to be fabricated, so WGMs have attracted much attention in the area of photonics and integrated photonic circuits. It is well known that the effect of total internal reflection restricts the size of this mirocavity. Such drawback goes against the integration of photon. However, the photonic crystal microcavities (PCMC) make a breakthrough recently. The WGMs in the PCMC are possible to gain both ultra-high Q and ultra-small mode volume. In this paper, the property of the mode in photonic crystal ring cavity is analyzed by FDTD and PWE. By modifying the airholes in the corners of the ring cavity, we can obtain the WGM. Also the Q factor of WGM in photonic crystal ring cavity is calculated. This favors the design of the photonic crystal microcavity components.

Mode analysis of the UV-written channel waveguide - art. no. 60340J

The effective index method (EIM) was adopted to model the channel waveguide patterned by the UV in photosensitive silica film. The effective indexes of the different dimension symmetrical and asymmetrical channel waveguides were calculated, and the resource of the error of the method was pointed out. At last, the dimension rang to propagate single mode was presented.

Dipole mode photonic crystal point defect laser on InGaAsP/InP

In this paper, we focus on the dipole mode of the two-dimensional (2D) photonic crystal (PC) single point defect cavity (SPDC) lasers and we report the fabrication and characterization of 2D PC SPDC lasers with the structure of adjusted innermost air holes. The photonic band and cavity Q factors are simulated by means of plane wave expansion (PWE) and finite-difference time-domain (FDTD), respectively. In order to improve the optical confinement of the SPDC, the diameter of the innermost holes was adjusted. Different lasing performances are observed experimentally. The experimental results agree with the theoretical prediction very well. (c) 2006 Elsevier B.V. All rights reserved.

Structural optimizations of SOI-based single-mode rib waveguide bends

Effects of structure parameters on bend loss of rib silicon-on-insulator (Sol) bend waveguides have been analyzed by means of effective index method (EIM) and 2D bend loss formula. The simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. Moreover, the optional structure parameters have been found when bend waveguides are single-mode.

Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator

Modes in equilateral triangle resonator (ETR) are analyzed and classified according to the irreducible representations of the point group C-3v., Both the analytical method based on the far field emission and the numerical method by FDTD technique are used to calculate the quality factors (Q-factors) of the doubly degenerate states in ETR. Results obtained from the two methods are in reasonable agreement. Considering the different symmetry properties of the doubly degenerate eigenstates, we also discuss the ETR joined with an output waveguide at one of the vertices by FDTD technique and the Pade approximation. The variation of Q-factors versus width of output waveguide is analyzed. The numerical results show that doubly degenerate eigenstates of TM0.36 and TM0.38 whose wavelengths are around 1.5 mu m in the resonator with side-length of 5 mu m have the Q-factors larger than 1000 when the width of the output waveguide is smaller than 0.4 mu m. When the width of the output waveguide is set to 0.3 mu m, the symmetrical states that are more efficiently coupled to output waveguide have Q-factors about 8000, which are over 3 times larger than those of asymmetric state.