Interactive light and sound table: an EPS@ISEP project

Interactive products are appealing objects in a technology-driven society and the offer in the market is wide and varied. Most of the existing interactive products only provide either light or sound experiences. Therefore, the goal of this project was to develop a product aimed for children combining both features. This project was developed by a team of four thirdyear students with different engineering backgrounds and nationalities during the European Project Semester at ISEP (EPS@ISEP) in 2012. This paper presents the process that led to the development of an interactive sound table that combines nine identical interaction blocks, a control block and a sound block. Each interaction block works independently and is composed of four light emitting diodes (LED) and one infrared (IR) sensor. The control is performed by an Arduino microcontroller and the sound block includes a music shield and a pair of loud speakers. A number of tests were carried out to assess whether the controller, IR sensors, LED, music shield and speakers work together properly and if the ensemble was a viable interactive light and sound device for children.

A CMOS micro power switched-capacitor DC-DC step-up converter for indoor light energy harvesting applications

This paper presents a micro power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT fractional open circuit voltage (V-OC) technique is implemented by an asynchronous state machine (ASM) that creates and dynamically adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge sharing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm(2) in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm(2), is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m(2). After starting-up, the system requires an irradiance of only 0.18 W/m(2) (18 mu W/cm(2)) to remain operating. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mu W. These values are, to the best of the authors' knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3 % for an input power of 48 mu W, which is comparable with reported values from circuits operating at similar power levels.

Tunnig optical A-Sic/A-Si active filters by UV bias light in the visible and infrared spectral ranges

Visible range to telecom band spectral translation is accomplished using an amorphous SiC pi'n/pin wavelength selector under appropriate front and back optical light bias. Results show that background intensity works as selectors in the infrared region, shifting the sensor sensitivity. Low intensities select the near-infrared range while high intensities select the visible part according to its wavelength. Here, the optical gain is very high in the infrared/red range, decreases in the green range, stays close to one in the blue region and strongly decreases in the near-UV range. The transfer characteristics effects due to changes in steady state light intensity and wavelength backgrounds are presented. The relationship between the optical inputs and the output signal is established. A capacitive optoelectronic model is presented and tested using the experimental results. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energia solar fotovoltaica: contributo para um roadmapping do seu desenvolvimento tecnológico

Trabalho realizado sob orientação do Prof. António Brandão Moniz para a disciplina “Sócio-Economia da Inovação” do Mestrado Engenharia Integrado em Engenharia Electrotécnica e Computadores realizado na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa (Portugal)

Detecção e quantificação automática da actividade solar

Dissertação para obtenção do grau de Mestrado Integrado em Engenharia Electrotécnica e de Computadores

How short and light can a simple pendulum be for classroom use?

We compare the period of oscillation of an ideal simple pendulum with the period of a more 'real' pendulum constituted of a rigid sphere and a rigid slender rod. We determine the relative error in the calculation of the local acceleration of gravity if the period of the ideal pendulum is use?d instead of the period of this real pendulum. © 2014 IOP Publishing Ltd..

InOx thin films deposited by plasma assisted evaporation: application in light shutters

An integration of undoped InOx and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InOx thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium teardrops with no intentional heating of the glass substrates. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to establish an optimized reaction between the oxygen plasma and the metal vapor. These films show the following main characteristics: transparency of 87% (wavelength, lambda = 632.8 nm) and sheet resistance of 52 Omega/sq; while on commercial ITO films the transparency was of 92% and sheet resistance of 83 Omega/sq. The InOx thin film surface characterized by AFM shows a uniform grain texture with a root mean square surface roughness of Rq similar to 2.276 nm. In contrast, commercial ITO topography is characterized by two regions: one smoother with Rq similar to 0.973 nm and one with big grains (Rq similar to 3.617 nm). For the shutters assembled using commercial ITO, the light transmission coefficient (Tr) reaches the highest value (Tr-max) of 89% and the lowest (Tr-min) of 1.3% [13], while for the InOx shutters these values are 80.1% and 3.2%, respectively. Regarding the electric field required to achieve 90% of the maximum transmission in the ON state (E-on), the one presented by the devices assembled with commercial ITO coated glasses is 2.41 V/mu m while the one presented by the devices assembled with InOx coated glasses is smaller, 1.77 V/mu m. These results corroborate the device quality that depends on the base materials and fabrication process used. (C) 2014 Elsevier Ltd. All rights reserved.

Técnica de separação de cor para fotocoagulação com luz solar concentrada

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Biomédica

Módulo fotovoltaico com seguimento da posição solar

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores

Light-activated amplification in SiC Tandem devices: A capacitive active filter model

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimentally and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing capacitance to control the power delivered to the load.

Growth of the [110] oriented TiO2 nanorods on ITO substrates by sputtering technique for dye-sensitized solar cells

TiO2 films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. It has been found that the sputtering pressure is a very important parameter for the structure of the deposited TiO2 films. When the pressure is lower than 1 Pa, the deposited has a dense structure and shows a preferred orientation along the [101] direction. However, the nanorod structure has been obtained as the sputtering pressure is higher than 1 Pa. These nanorods structure TiO2 film shows a preferred orientation along the [110] direction. The x-ray diffraction and the Raman scattering measurements show both the dense and the nanostructure TiO2 films have only an anatase phase, no other phase has been obtained. The results of the SEM show that these TiO2 nanorods are perpendicular to the ITO substrate. The TEM measurement shows that the nanorods have a very rough surface. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorod films prepared at different sputtering pressures as photoelectrode. And the effect of the sputtering pressure on the properties of the photoelectric conversion of the DSSCs has been studied.

Sistemas de bombagem de água utilizando energia solar fotovoltaica

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia Mecânica

Simulation of rectifier voltage malfunction on OWECS, four-level converter, HVDC light link: Smart grid context tool

This paper presents a model for the simulation of an offshore wind system having a rectifier input voltage malfunction at one phase. The offshore wind system model comprises a variable-speed wind turbine supported on a floating platform, equipped with a permanent magnet synchronous generator using full-power four-level neutral point clamped converter. The link from the offshore floating platform to the onshore electrical grid is done through a light high voltage direct current submarine cable. The drive train is modeled by a three-mass model. Considerations about the smart grid context are offered for the use of the model in such a context. The rectifier voltage malfunction domino effect is presented as a case study to show capabilities of the model. (C) 2015 Elsevier Ltd. All rights reserved.

Light memory function in a double pin SiC device

A double pi'npin heterostructure based on amorphous SiC has a non linear spectral gain which is a function of the signal wavelength that impinges on its front or back surface. An impulse of a configurable length and amplitude is applied to a 390 nm LED which illuminates one of the sensor surfaces, followed by a time period without any illumination after which an input signal with a different wavelength is impinged upon the front surface. Results show that the intensity and duration of the impulse illumination of the surfaces influences the sensor's response with different output for the same input signal. This paper studies this effect and proposes an application as a short term light memory. (C) 2015 Elsevier B.V. All rights reserved.

Numerical simulation of plasmonic effects in amorphous silicon induced by embedded aluminium nanoparticles

This work reports a theoretical study aimed to identify the plasmonic resonance condition for a system formed by metallic nanoparticles embedded in an a-Si: H matrix. The study is based on a Tauc-Lorentz model for the electrical permittivity of a-Si: H and a Drude model for the metallic nanoparticles. It is calculated the The polarizability of an sphere and ellipsoidal shaped metal nanoparticles with radius of 20 nm. We also performed FDTD simulations of light propagation inside this structure reporting a comparison among the effects caused by a single nanoparticles of Aluminium, Silver and, as a comparison, an ideally perfectly conductor. The simulation results shows that is possible to obtain a plasmonic resonance in the red part of the spectrum (600-700 nm) when 20-30 nm radius Aluminium ellipsoids are embedded into a-Si: H.