Temperature variation of the grüneisen parameter in magnesium oxide

The thermal expansion of magnesium oxide has been measured below room temperature from 140°K to 284.5°K, using an interferometric method. The accuracy of measurement is better than 3% in the temperature range studied. The agreement of these results with Durand's is quite good, but consistently higher over most of the range by 2 or 3%, for the most part within the estimated experimental error. The Grüneisen parameter remains constant at about 1.51 over the present experimental range; but an isolated measurement of Durand at 85°K suggests that at lower temperatures it rises quite sharply above this value. This possibility is therefore investigated theoretically. With a non-central force model to represent MgO, γ(−3) and γ(2) are calculated and it is found that γ(−3) > γ(2), again suggesting that the Grüneisen parameter increases with falling temperature. Of the two reported experimental values for the infra-red absorption frequency, correlation with the heat capacity strongly indicates a wavelength of 25.26μm rather than 17.3μm. Thermal expansion measurements at still lower temperatures must be carried out to confirm definitely the rise in the Grüneisen parameter.

Effect of indium doping on the electrical switching behaviour of Ge–Te glasses

Bulk Ge15Te85−x In x (1 ≤ x ≤ 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V T, it is proposed that Ge15Te85−x In x glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity measurements also support the idea of an extended rigidity percolation in Ge15Te85−x In x glasses. In addition, the minimum seen in V T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

Evidence for a thermally reversing window in bulk Ge–Te–Si glasses revealed by alternating differential scanning calorimetry

Experiments on Ge15Te85− x Si x glasses (2 ≤ x ≤ 12) using alternating differential scanning calorimetry (ADSC) indicate that these glasses exhibit one glass transition and two crystallization reactions upon heating. The glass transition temperature has been found to increase almost linearly with silicon content, in the entire composition tie-line. The first crystallization temperature (T c1) exhibits an increase with silicon content for x < 5; T c1 remains almost a constant in the composition range 5 < x ≤ 10 and it increases comparatively more sharply with silicon content thereafter. The specific heat change (ΔC p) is found to decrease with an increase in silicon content, exhibiting a minimum at x = 5 (average coordination number, r = 2.4); a continuous increase is seen in ΔC p with silicon concentration above x = 5. The effects seen in the variation with composition of T c1 and ΔC p at x = 5, are the specific signatures of the mean-field stiffness threshold at r = 2.4. Furthermore, a broad trough is seen in the enthalpy change (ΔH NR), which is indicative of a thermally reversing window in Ge15Te85− x Si x glasses in the composition range 2 ≤ x ≤ 6 (2.34 ≤ r ≤ 2.42).

Thermal properties of 3BaO–3TiO2–B2O3 glasses

Transparent glasses in the system 3BaO–3TiO2–B2O3 (BTBO) were fabricated via the conventional melt-quenching technique. The as-quenched samples were confirmed to be non-crystalline by differential thermal analysis (DTA). Thermal parameters were evaluated using non-isothermal DTA experiments. The Kauzmann temperature was found to be 759 K based on heating-rate-dependent glass transition and crystallization temperatures. A theoretical relation for the temperature-dependent viscosity is proposed for these glasses and glass-ceramics.

The electrical switching and thermal behavior of bulk Ge(15)Te(85-x)Sn(x) and Ge(17)Te(83-x)Sn(x) glasses

Bulk Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses, are found to exhibit memory type electrical switching. The switching voltages (V(t)) and thermal stability of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses are found to decrease with Sn content. The composition dependence of v, has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge-Te-Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses. (C) 2011 Elsevier B.V. All rights reserved.

Exfoliation of copper hydroxysalt in water and the conversion of the exfoliated layers to cupric and cuprous oxide nanoparticles

P-aminobenzoate- intercalated copper hydroxysalt was prepared by coprecipitation at high pH (similar to 12). As the pH was reduced to similar to 7 on washing with water, the development of partial positive charge on the amine end of the intercalated anion caused repulsion between the layers leading to delamination and colloidal dispersion of monolayers of copper hydroxysalt in water. The dispersed copper hydroxysalt monolayers were used as precursors for the synthesis of copper(I)/(II) oxide nanoparticles at room temperature. While the hydroxysalt layers yielded spindle-shaped CuO particles when left to stand, they formed hollow spherical nanoparticles of Cu(2)O when treated with an alkaline solution of ascorbic acid.

In-situ formation of graphene-lead oxide composite and its use in trace arsenic detection

Reduced graphene oxide-lead dioxide composite is formed when EGO coated surface is electrochemically reduced along with lead ions in the solution. This composite has been shown to be an excellent material for low level detection of arsenic. Various functional groups present on EGO, in a wide pH range of 2-11, are responsible for the favorable interaction between metal ion and the modified electrode surface and subsequent trace level detection. X-ray photoelectron spectroscopy and Raman spectroscopic techniques confirm the formation of composite and its composition. Thin layer of lead dioxide along with reduced exfoliated graphene oxide has been shown to be responsible for the enhanced activity of the surface. The detection limit of arsenic is found to be 10 nM. This study opens up the possibility of using the composites for sensing applications and possibly simultaneous detection of arsenic and lead. (C) 2011 Elsevier B.V. All rights reserved.

Injection-molded high-density polyethylene-hydroxyapatite-aluminum oxide hybrid composites for hard-tissue replacement: Mechanical, biological, and protein adsorption behavior

In this article, we report the mechanical and biocompatibility properties of injection-molded high-density polyethylene (HDPE) composites reinforced with 40 wt % ceramic filler [hydroxyapatite (HA) and/or Al2O3] and 2 wt % titanate as a coupling agent. The mechanical property measurements revealed that a combination of a maximum tensile strength of 18.7 MPa and a maximum tensile modulus of about 855 MPa could be achieved with the injection-molded HDPE20 wt % HA20 wt % Al2O3 composites. For the same composite composition, the maximum compression strength was determined to be 71.6 MPa and the compression modulus was about 660 MPa. The fractrography study revealed the uniform distribution of ceramic fillers in the semicrystalline HDPE matrix. The cytocompatibility study with osteoblast-like SaOS2 cells confirmed extensive cell adhesion and proliferation on the injection-molded HDPE20 wt % HA20 wt % Al2O3 composites. The cell viability analysis with the 3(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay revealed a statistically significant difference between the injection-molded HDPE20 wt % HA20 wt % Al2O3 composites and sintered HA for various culture durations of upto 7 days. The difference in cytocompatibility properties among the biocomposites is explained in terms of the difference in the protein absorption behavior. (C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2012

A comparative study of erbium oxide and gadolinium oxide high-k dielectric thin films grown by low-pressure metalorganic chemical vapour deposition (MOCVD) using beta-Diketonates as precursors

In this paper, a comparative study of thin films of Er2O3 and Gd2O3 grown on n-type Si(100) by low-pressure metalorganic chemical vapour deposition (MOCVD) under the identical conditions has been presented. beta-Diketonate complex of rate earth metals was used as precursor. Description on the evolution of the morphology, structure, optical, and electrical characteristics of films with respect to growth parameters and post-deposition annealing process has been presented. As-gown Gd2O3 films grow with <111> texture, whereas the texture of Er2O3 films strongly depends on the growth temperature (either <100> or <111>). Compositional analysis reveals that the Gd2O3 films grown at or above 500degreesC are carbon free whereas Er2O3 films at upto 525degreesC show the presence of heteroatoms and Er2O3 films grown above 525degreesC are carbon five. The effective dielectric constant is in the range of 7-24, while the fixed charge density is in the range - 10(11) to 10(10) CM-2 as extracted from the C-V characteristics. DC I-V study was carried out to examine the leakage behaviour of films. It reveals that the as-grown Gd2O3 film was very leakey in nature. Annealing of the films in oxidizing ambient for a period of 20 min results in a drastic improvement in the leakage behaviour. The presence of heteroatoms (such as carbon) and their effect on the properties of films are discussed.

Effect of bismuth doping in GeSe and GeSeTe glasses by photoluminescence spectroscopy

Semiconducting chalcogenide glasses in the systems GeSe and GeSeTe with the addition of bismuth show unusual phenomena of p - to - n transition. Samples for characterization were prepared in bulk form by melt-quenching technique, with increasing Bi at. % to replace selenium. Photoluminescence (PL) spectroscopic studies on all the samples were carried out at 4.2K using an Ar-Ion laser for illuminating the samples. The laser power used was 200mw. Both the systems show a decrease in the intensity of PL signal with increasing Bi content. This interesting behavior is discussed on the basis of a charged defect model for chalcogenide glasses, proposed by Mott, Davis and Street (MDS). The effect of bismuth addition on these charged defects is also discussed to explain the carrier type reversal.

Structural and dielectric characteristics of Bi2O3-TiO2-SrB4O7 glasses

Glasses of the composition 0.20 Bi2O3 - 0.30 TiO2 - 0.50 SrB4O7 and 0.30 Bi2O3 - 0.45 TiO2 - 0.25 SrB4O7 have been fabricated by conventional glass processing technique. These glasses have been characterized using X-ray powder diffraction (XRD), differential thermal analysis (DTA) and high resolution transmission electron microscopy (HRTEM). The frequency response of the dielectric constant and the loss tangent of these glasses has been studied. The formation of the crystalline bismuth titanate, Bi4Ti3O12 (BiT) phase in the heat treated samples has been confirmed by XRD and HRTEM studies. The measured ET Of the glass-ceramics are found to be in good agreement with those predicted by the logarithmic mixture rule. Optical second harmonic generation (SHG) at 1064 nm has been observed in the heat treated samples and is attributed to the formation of crystalline Bi4Ti3O12 (BiT) phase in the SrB4O7 (SBO) matrix.

Non-linear electrical response of chalcogenide glasses: Memory state phenomena

Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.

Analysis of oxide and vanadate supports for catalytic hydrogen combustion: Kinetic and mechanistic investigations

Combustion synthesized oxide and vanadate compounds (CeO2, Fe2O3, CeVO4, and FeVO4) were tested for catalytic hydrogen combustion. The compounds were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. All the four compounds showed good activity and stability for catalytic hydrogen combustion and more than 95% conversion was observed over all the compounds within 500 degrees C. The mechanisms for the reaction over the different classes of compounds (cerium-based and iron-based compounds) were proposed on the basis of spectroscopic observations. The main difference in the mechanisms was in the nature of adsorption of H2 over the sites. The elementary processes for the reaction were proposed, corresponding rate expressions were derived, and the rate parameters for the reaction were estimated using nonlinear regression. Langmuir-Hinshelwood and Eley-Rideal mechanisms were also tested for the reaction and the proposed mechanism was compared with these mechanisms. (c) 2011 American Institute of Chemical Engineers AIChE J, 2012