Magnetic field induced delocalization in multi-wall carbon nanotube-polystyrene composite at high fields

In well dispersed multi-wall carbon nanotube-polystyrene composite of 15 wt%, with room temperature conductivity of similar to 5 S/cm and resistivity ratio R-2K/R-200K] of similar to 1.4, the temperature dependence of conductivity follows a power-law behavior. The conductivity increases with magnetic field for a wide range of temperature (2-200 K), and power-law fits to conductivity data show that localization length (xi) increases with magnetic field, resulting in a large negative magnetoresistance (MR). At 50T, the negative MR at 8 K is similar to 13% and it shows a maximum at 90K (similar to 25%). This unusually large negative MR indicates that the field is delocalizing the charge carriers even at higher temperatures, apart from the smaller weak localization contribution at T < 20 K. This field-induced delocalization mechanism of MR can provide insight into the intra and inter tube transport. (C) 2013 Elsevier Ltd. All rights reserved.

Near-infrared photoactive Cu3BiS3 thin films by co-evaporation

Semiconducting Cu3BiS3 (CBS) thin films were deposited by co-evaporation of Cu, Bi elemental metallic precursors, with in situ sulphurisation, using a quartz effusion cell. Cu3BiS3 thin films were structurally characterized by XRD and FE-SEM. The chemical bonding of the ions was examined by XPS. As deposited films were demonstrated for metal-semiconductor-metal near IR photodectection under lamp and laser illuminations. The photo current amplified to three orders and two orders of magnitude upon the IR lamp and 60 m W cm(-2) 1064 nm IR laser illuminations, respectively. Larger grains, made up of nano needle bunches aided the transport of carriers. Transport properties were explained based on the trap assisted space charge conduction mechanism. Steady state detector parameters like responsivity varied from 1.04 AW(-1) at 60 m Wcm(-2) to 0.22 AW(-1) at 20 m Wcm(-2). Detector sensitivity of 295 was found to be promising and further could be tuned for better responsivity and efficiency in utilization of near infra-red photodetector. (C) 2014 AIP Publishing LLC.

Achieving universal rural energy access in india: A low carbon pathway

India's energy challenges are three pronged: presence of majority energy poor lacking access to modern energy; need for expanding energy system to bridge this access gap as well as to meet the requirements of fast-growing economy; and the desire to partner with global economies in mitigating the threat of climate change. The presence of 364 million people without access to electricity and 726 million relying on biomass for cooking out of a total rural population of 809 million indicate the seriousness of challenge. In this paper, we discuss an innovative approach to address this challenge, which intends to take advantage of recent global developments and untapped capabilities possessed by India. Intention is to use climate change mitigation imperative as a stimulus and adopt a public-private-partnership-driven ‘business model' with innovative institutional, regulatory, financing, and delivery mechanisms. Some of the innovations are: creation of rural energy access authorities within the government system as leadership institutions; establishment of energy access funds to enable transitions from the regime of "investment/fuel subsidies" to "incentive-linked" delivery of energy services; integration of business principles to facilitate affordable and equitable energy sales and carbon trade; and treatment of entrepreneurs as implementation targets. This proposal targets 100% access to modern energy carriers by 2030 through a judicious mix of conventional and biomass energy systems with an investment of US$35 billion over 20 years. The estimated annual cost of universal energy access is about US$9 billion for a GHG mitigation potential of 213Tg CO2e at an abatement cost of US$41/tCO2e. It is a win-win situation for all stakeholders. Households benefit from modern energy carriers at affordable cost; entrepreneurs run profitable energy enterprises; carbon markets have access to CERs; the government has the satisfaction of securing energy access to rural people; and globally, there is a benefit of climate change mitigation.

Controlling Conformations of Diketopyrrolopyrrole-Based Conjugated Polymers: Role of Torsional Angle

Transport of charge carriers through conjugated polymers is strongly influenced by the presence and distribution of structural disorders. In the present work, structural defects caused by the presence of torsional.. angle were investigated in a diketopyrrolopyrrole (DPP)-based conjugated polymer. Two new copolymers of DPP were synthesized with varying torsional angles to trace the role of structural disorder. The optical properties of these copolymers in solution and thin film reveal the strong influence of torsional angle on their photophysical properties. A strong influence was observed on carrier transport properties of polymers in organic field-effect transistors (OFET) device geometry. The polymers based on phenyl DPP with higher torsional angle (PPTDPP-OD-TEG) resulted in high threshold voltage with less charge carrier mobility as compared to the polymer based on thiophene DPP (2DPP-OD-TEG) bearing a lower torsional angle. Carrier mobility and the molecular orientation of the conjugated polymers were correlated on the basis of grazing incidence X-ray scattering measurements showing the strong role of torsional angle introduced in the form of structural disorder. The results presented in this Article provide a deep insight into the sensitivity of structural disorder and its impact on the device performance of DPP-based conjugated polymers.

Fabrication of Poly(Vinylidene Chloride-Co-Vinyl Chloride)/TiO2 Nanocomposite Films and Their Dielectric Properties

Flexible poly(vinylidene chloride-co-vinyl chloride)/TiO2 nanocomposite films were fabricated and their dielectric properties were studied. The structural characterization of the composites was carried out using various spectroscopic and electron microscopic techniques. From the thermal analysis of the composites, an improvement in the thermal properties was observed for the composites, as compared to the neat polymer. An increase in the DC conductivity was also observed in the composites, which was due to the tunneling of charge carriers. Furthermore, it was observed that the optimal loading of titania in the matrix was required, above which the properties of the composites showed deterioration. The study of the dielectric properties of the composites supports their use in microelectronic devices as separator in charge storage devices and in transistors.

Semiconductor-like Sensitivity in Metallic Ultrathin Gold Nanowire-Based Sensors

Due to the ease of modification of electronic structure upon analyte adsorption, semiconductors have been the preferred materials as chemical sensors. At reduced dimension, however, the sensitivity of semiconductor-based sensors deteriorates significantly due to passivation, and often by increased band gap caused by quantum confinement. Using first-principles density functional theory combined with Boltzmann transport calculations, we demonstrate semiconductor-like sensitivity toward chemical species in ultrathin gold nanowires (AuNWs). The sensing mechanism is governed by the modification of the electronic structure of the AuNW as well as scattering of the charge carriers by analyte adsorption. Most importantly, the sensitivity exhibits a linear relationship with the electron affinities of the respective analytes. Based on this relationship, we propose an empirical parameter, which can predict an analyte-specific sensitivity of a AuNW, rendering them as effective sensors for a wide range of chemical an alytes.

Thermoelectric properties of Indium doped Cu2GeSe3

Cu2Ge1-xInxSe3 (x = 0, 0.05, 0.1, 0.15) compounds were prepared by a solid state synthesis. The powder X-ray diffraction pattern of the undoped sample revealed an orthorhombic phase. The increase in doping content led to the appearance of additional peaks related to cubic and tetragonal phases along with the orthorhombic phase. This may be due to the substitutional disorder created by Indium doping. Scanning Electron Microscopy micrographs showed a continuous large grain growth with low porosity, which confirms the compaction of the samples after hot pressing. Elemental composition was measured by Electron Probe Micro Analyzer and confirmed that all the samples are in the stoichiometric ratio. The electrical resistivity (rho) systematically decreased with an increase in doping content, but increased with the temperature indicating a heavily doped semiconductor behavior. A positive Seebeck coefficient (S) of all samples in the entire temperature range reveal holes as predominant charge carriers. Positive Hall coefficient data for the compounds Cu2InxGe1-xSe3 (x = 0, 0.1) at room temperature (RT) confirm the sign of Seebeck coefficient. The trend of rho as a function of doping content for the samples Cu2InxGe1-xSe3 with x = 0 and 0.1 agrees with the measured charge carrier density calculated from Hall data. The total thermal conductivity increased with rising doping content, attributed to an increase in carrier thermal conductivity. The thermal conductivity revealed 1/T dependence, which indicates the dominance of Umklapp phonon scattering at elevated temperatures. The maximum thermoelectric figure of merit (ZT) = 0.23 at 723 K was obtained for Cu2In0.1Ge0.9Se3. (C)2014 Elsevier Ltd. All rights reserved.

Graphene as a sensor

Graphene has emerged as one of the strongest candidates for post-silicon technologies. One of the most important applications of graphene in the foreseeable future is sensing of particles of gas molecules, biomolecules or different chemicals or sensing of radiation of particles like alpha, gamma or cosmic particles. Several unique properties of graphene such as its extremely small thickness, very low mass, large surface to volume ratio, very high absorption coefficient, high mobility of charge carriers, high mechanical strength and high Young's modulus make it exceptionally suitable for making sensors. In this article we review the state-of-the-art in the application of graphene as a material and radiation detector, focusing on the current experimental status, challenges and the excitement ahead.

Thermoelectric properties of Zn doped Cu2SnSe3

Zn doped ternary compounds Cu2ZnxSn1-xSe3 (x = 0, 0.025, 0.05, 0.075) were prepared by solid state synthesis. The undoped compound showed a monoclinic crystal structure as a major phase, while the doped compounds showed a cubic crystal structure confirmed by powder XRD (X-Ray Diffraction). The surface morphology and elemental composition analysis for all the samples were studied by SEM (Scanning Electron Microscopy) and EPMA (Electron Probe Micro Analyzer), respectively. SEM micrographs of the hot pressed samples showed the presence of continuous and homogeneous grains confirming sufficient densification. Elemental composition of all the samples revealed an off-stoichiometry, which was determined by EPMA. Transport properties were measured between 324 K and 773 K. The electrical resistivity decreased up to the samples with Zn content x = 0.05 in Cu2ZnxSn1-xSe3, and slightly increased in the sample Cu2Zn0.075Sn0.925Se3. This behavior is consistent with the changes in the carrier concentration confirmed by room temperature Hall coefficient data. Temperature dependent electrical resistivity of all samples showed heavily doped semiconductor behavior. All the samples exhibit positive Seebeck coefficient (S) and Hall coefficient indicating that the majority of the carriers are holes. A linear increase in Seebeck coefficient with increase in temperature indicates the degenerate semiconductor behavior. The total thermal conductivity of the doped samples increased with a higher amount of doping, due to the increase in the carrier contribution. The total and lattice thermal conductivity of all samples showed 1/1 dependence, which points toward the dominance of phonon scattering at high temperatures. The maximum 1/TZF = 0.48 at 773 K was obtained for the sample Cu2SnSe3 due to a low thermal conductivity compared to the doped samples. (C) 2014 Elsevier B.V. All rights reserved.

Application of lateral photovoltage towards contactless light beam induced current measurements and its dependence on the finite beam size

The nature of the signal due to light beam induced current (LBIC) at the remote contacts is verified as a lateral photovoltage for non-uniformly illuminated planar p-n junction devices; simulation and experimental results are presented. The limitations imposed by the ohmic contacts are successfully overcome by the introduction of capacitively coupled remote contacts, which yield similar results without any significant loss in the estimated material and device parameters. It is observed that the LBIC measurements introduce artefacts such as shift in peak position with increasing laser power. Simulation of LBIC signal as a function of characteristic length L-c of photo-generated carriers and for different beam diameters has resulted in the observed peak shifts, thus attributed to the finite size of the beam. Further, the idea of capacitively coupled contacts has been extended to contactless measurements using pressure contacts with an oxidized aluminium electrodes. This technique avoids the contagious sample processing steps, which may introduce unintentional defects and contaminants into the material and devices under observation. Thus, we present here, the remote contact LBIC as a practically non-destructive tool in the evaluation of device parameters and welcome its use during fabrication steps. (C) 2014 AIP Publishing LLC.

Improvement of electrical conductivity in Pb0.96-yMn0.04SnyTe alloys for high temperature thermoelectric applications

Lead-tin-telluride is a well-known thermoelectric material in the temperature range 350-750 K. Here, this alloy doped with manganese (Pb0.96-yMn0.04SnyTe) was prepared for different amounts of tin. X-ray diffraction showed a decrease of the lattice constant with increasing tin content, which indicated solid solution formation. Microstructural analysis showed a wide distribution of grain sizes from <1 mu m to 10 mm and the presence of a SnTe rich phase. All the transport properties were measured in the range of 300-720 K. The Seebeck coefficient showed that all the samples were p-type indicating holes as dominant carriers in the measurement range. The magnitude increased systematically on reduction of the Sn content due to possible decreasing hole concentration. Electrical conductivity showed the degenerate nature of the samples. Large values of the electrical conductivity could have possibly resulted from a large hole concentration due to a high Sn content and secondly, due to increased mobility by sp-d orbital interaction between the Pb1-ySnyTe sublattice and the Mn2+ ions. High thermal conductivity was observed due to higher electronic contribution, which decreased systematically with decreasing Sn content. The highest zT = 0.82 at 720 K was obtained for the alloy with the lowest Sn content (y = 0.56) due to the optimum doping level.

Tuning photoinduced terahertz conductivity in monolayer graphene: Optical-pump terahertz-probe spectroscopy

Optical-pump terahertz-probe differential transmission measurements of as-prepared single layer graphene (AG) (unintentionally hole dopedwith Fermi energy E-F at similar to -180 meV), nitrogen doping compensated graphene (NDG) with E-F similar to -10 meV, and thermally annealed doped graphene (TAG) are examined quantitatively to understand the opposite signs of photoinduced dynamic terahertz conductivity Delta sigma. It is negative for AG and TAG but positive for NDG. We show that the recently proposed mechanism of multiple generations of secondary hot carriers due to Coulomb interaction of photoexcited carriers with the existing carriers together with the intraband scattering can explain the change of photoinduced conductivity sign and its magnitude. We give a quantitative estimate of Delta sigma in terms of controlling parameters-the Fermi energy E-F and momentum relaxation time tau. Furthermore, the cooling of photoexcited carriers is analyzed using a supercollision model which involves a defect mediated collision of the hot carriers with the acoustic phonons, thus giving an estimate of the deformation potential.

Time resolved terahertz spectroscopy of low frequency electronic resonances and optical pump-induced terahertz photoconductivity in reduced graphene oxide membrane

Towards ultrafast optoelectronic applications of single and a few layer reduced graphene oxide (RGO), we study time domain terahertz spectroscopy and optical pump induced changes in terahertz conductivity of self-supported RGO membrane in the spectral window of 0.5-3.5 THz. The real and imaginary parts of conductivity spectra clearly reveal low frequency resonances, attributed to the energy gaps due to the van Hove singularities in the density of states flanking the Dirac points arising due to the relative rotation of the graphene layers. Further, optical pump induced terahertz conductivity is positive, pointing to the dominance of intraband scattering processes. The relaxation dynamics of the photo-excited carriers consists of three cooling pathways: the faster (similar to 450 fs) one due to optical phonon emission followed by disorder mediated large momentum and large energy acoustic phonon emission with a time constant of a few ps (called the super-collision mechanism) and a very large time (similar to 100 ps) arising from the deep trap states. The frequency dependence of the dynamic conductivity at different delay times is analyzed in term of Drude-Smith model. (C) 2014 Published by Elsevier Ltd.

Formulation of nanotized curcumin and demonstration of its antimalarial efficacy

Aim: The present study was conducted to overcome the disadvantages associated with the poor water solubility and low bioavailability of curcumin by synthesizing nanotized curcumin and demonstrating its efficacy in treating malaria. Materials and methods: Nanotized curcumin was prepared by a modified emulsion-diffusion-evaporation method and was characterized by means of transmission electron microscopy, atomic force microscopy, dynamic light scattering, Zetasizer, Fourier transform infrared spectroscopy, and differential thermal analysis. The novelty of the prepared nanoformulation lies in the fact that it was devoid of any polymeric matrices used in conventional carriers. The antimalarial efficacy of the prepared nanotized curcumin was then checked both in vitro and in vivo. Results: The nanopreparation was found to be non-toxic and had a particle size distribution of 20-50 nm along with improved aqueous dispersibility and an entrapment efficiency of 45%. Nanotized curcumin (half maximal inhibitory concentration IC50]: 0.5 mu M) was also found to be ten-fold more effective for growth inhibition of Plasmodium falciparum in vitro as compared to its native counterpart (IC50: 5 mu M). Oral bioavailability of nanotized curcumin was found to be superior to that of its native counterpart. Moreover, when Plasmodium berghei-infected mice were orally treated with nanotized curcumin, it prolonged their survival by more than 2 months with complete clearance of parasites in comparison to the untreated animals, which survived for 8 days only. Conclusion: Nanotized curcumin holds a considerable promise in therapeutics as demonstrated here for treating malaria as a test system.

Field dependent and disorder-induced nonlinear charge transport in electrochemically doped polypyrrole devices

Electric field activated charge transport is studied in the metal/polymer/metal device structure of electropolymerized polypyrrole down to 10 K with varying carrier density and disorder. Disorder induced nonlinear behaviour is observed in polypyrrole devices grown at room temperature which is correlated to delocalization of states. The slope parameter of currentvoltage characteristics (in log-log scale) increases as the temperature decreases, which indicates the onset of stronger field dependence. The field dependence of mobility becomes dominant as the carrier density decreases. The sharp dip in differential conductance indicates the localization of carriers at low temperatures which reduces the effective number of carriers involved in the transport.