Electrical scanning probe microscopy on organic optoelectronic structures

In the field of organic optoelectronics, the nanoscale structure of the materials has huge im-pact on the device performance. Here, scanning force microscopy (SFM) techniques become increasingly important. In addition to topographic information, various surface properties can be recorded on a nanometer length scale, such as electrical conductivity (conductive scanning force microscopy, C-SFM) and surface potential (Kelvin probe force microscopy, KPFM).rnrnIn the context of this work, the electrical SFM modes were applied to study the interplay be-tween morphology and electrical properties in hybrid optoelectronic structures, developed in the group of Prof. J. Gutmann (MPI-P Mainz). In particular, I investigated the working prin-ciple of a novel integrated electron blocking layer system. A structure of electrically conduct-ing pathways along crystalline TiO2 particles in an insulating matrix of a polymer derived ceramic was found and insulating defect structures could be identified. In order to get insights into the internal structure of a device I investigated a working hybrid solar cell by preparing a cross cut with focused ion beam polishing. With C-SFM, the functional layers could be identified and the charge transport properties of the novel active layer composite material could be studied. rnrnIn C-SFM, soft surfaces can be permanently damaged by (i) tip induced forces, (ii) high elec-tric fields and (iii) high current densities close to the SFM-tip. Thus, an alternative operation based on torsion mode topography imaging in combination with current mapping was intro-duced. In torsion mode, the SFM-tip vibrates laterally and in close proximity to the sample surface. Thus, an electrical contact between tip and sample can be established. In a series of reference experiments on standard surfaces, the working mechanism of scanning conductive torsion mode microscopy (SCTMM) was investigated. Moreover, I studied samples covered with free standing semiconducting polymer nano-pillars that were developed in the group of Dr. P. Theato (University Mainz). The application of SCTMM allowed non-destructive imag-ing of the flexible surface at high resolution while measuring the conductance on individual pillarsrnrnIn order to study light induced electrical effects on the level of single nanostructures, a new SFM setup was built. It is equipped with a laser sample illumination and placed in inert at-mosphere. With this photoelectric SFM, I investigated the light induced response in function-alized nanorods that were developed in the group of Prof. R. Zentel (University Mainz). A block-copolymer containing an anchor block and dye moiety and a semiconducting conju-gated polymer moiety was synthesized and covalently bound to ZnO nanorods. This system forms an electron donor/acceptor interface and can thus be seen as a model system of a solar cell on the nanoscale. With a KPFM study on the illuminated samples, the light induced charge separation between the nanorod and the polymeric corona could not only be visualized, but also quantified.rnrnThe results demonstrate that electrical scanning force microscopy can study fundamental processes in nanostructures and give invaluable feedback to the synthetic chemists for the optimization of functional nanomaterials.rn

Spektroskopische Untersuchungen an Technetium und Silizium - Ein Festkörperlasersystem für die Resonanzionisationsspektroskopie

Diese Arbeit beschreibt eine wesentliche Weiterentwicklung des Titan:Saphir-Lasersystems der Arbeitsgruppe LARISSA am Institut für Physik der Johannes Gutenberg-Universität Mainz und dessen Anwendung im Bereich der Resonanzionisationsspektroskopie. Die Entwicklungsarbeiten am Lasersystem umfassten drei Aspekte: die Erhöhung der Ausgangsleistung der vorhandenen Titan:Saphir-Laser um einen Faktor zwei, um damit für den vorgesehenen Einsatz an resonanten Laserionenquellen an ISOL-Einrichtungen optimale Voraussetzungen zu schaffen. Des Weiteren wurden zwei spezielle angepasste Titan:Saphir-Laser entwickelt: Das Lasersystem wurde damit um einen von 700 nm - 950 nm kontinuierlich abstimmbaren Titan:Saphir-Laser sowie einen geseedeten Titan:Saphir-Laser mit einer Linienbreite von nur 20 MHz (im Vergleich zu 3 GHz der konventionellen Laser) erweitert. Die Leistungsfähigkeit des neuen Lasersystems wurde durch Resonanzionisationsspektroskopie hochangeregter atomarer Zustände in Gold und Technetium demonstriert. Aus den gemessenen Energielagen konnte über die Rydberg-Ritz-Formel das Ionisationspotential von Gold bestätigt werden und das von Technetium erstmals mit hoher Präzision bestimmt werden. Mit dem geseedeten Titan:Saphir-Laser wurde dopplerfreie Zwei-Photonen-Spektroskopie innerhalb eines heißen Ofens demonstriert. Bei spektroskopischen Untersuchungen mit dieser Methode an Siliziumisotopen konnte sowohl die Hyperfeinstruktur als auch die Isotopieverschiebung bei einer Breite der Resonanzen von etwa 90 MHz klar aufgelöst werden.