RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Correlated Conductance Fluctuations Close to the Berezinskii-Kosterlitz-Thouless Transition in Ultrathin NbN Films

We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultrathin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depends strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.

Polyelectrolyte/silver nanocomposite multilayer films as multifunctional thin film platforms for remote activated protein and drug delivery

We demonstrate a nanoparticle loading protocol to develop a transparent, multifunctional polyelectrolyte multilayer film for externally activated drug and protein delivery. The composite film was designed by alternate adsorption of poly(allylamine hydrochloride) (PAH) and dextran sulfate (DS) on a glass substrate followed by nanoparticle synthesis through a polyol reduction method. The films showed a uniform distribution of spherical silver nanoparticles with an average diameter of 50 +/- 20 nm, which increased to 80 +/- 20 nm when the AgNO3 concentration was increased from 25 to 50 mM. The porous and supramolecular structure of the polyelectrolyte multilayer film was used to immobilize ciprofloxacin hydrochloride (CH) and bovine serum albumin (BSA) within the polymeric network of the film. When exposed to external triggers such as ultrasonication and laser light the loaded films were ruptured and released the loaded BSA and CH. The release of CH is faster than that of BSA due to a higher diffusion rate. Circular dichroism measurements confirmed that there was no significant change in the conformation of released BSA in comparison with native BSA. The fabricated films showed significant antibacterial activity against the bacterial pathogen Staphylococcus aureus. Applications envisioned for such drug-loaded films include drug and vaccine delivery through the transdermal route, antimicrobial or anti-inflammatory coatings on implants and drug-releasing coatings for stents. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A comparative study of room temperature ferromagnetism in MgO films deposited by rf/dc sputtering using high purity Mg and MgO targets

Thin films of nanocrystalline MgO were deposited on glass/Si substrates by rf/dc sputtering from metallic Mg, and ceramic MgO targets. The purpose of this study is to identify the differences in the properties, magnetic in particular, of MgO films obtained on sputter deposition from 99.99% pure metallic Mg target in a controlled Nitrogen + Oxygen partial pressure (O(2)pp)] atmosphere as against those deposited using an equally pure ceramic MgO target in argon + identical oxygen ambience conditions while maintaining the same total pressure in the chamber in both cases. Characterization of the films was carried out by X-ray diffraction, focussed ion beam cross sectioning, atomic force microscopy and SQUID-magnetometry. The `as-obtained' films from pure Mg target are found to be predominantly X-ray amorphous, while the ceramic MgO target gives crystalline films, (002) oriented with respect to the film plane. The films consisted of nano-crystalline grains of size in the range of about 0.4 to 4.15 nm with the films from metallic target being more homogeneous and consisting of mostly subnanometer grains. Both the types of films are found to be ferromagnetic to much above room temperature. We observe unusually high maximum saturation magnetization (MS) values of 13.75 emu/g and similar to 4.2 emu/g, respectively for the MgO films prepared from Mg, and MgO targets. The origin of magnetism in MgO films is attributed to Mg vacancy (V-Mg), and 2p holes localized on oxygen sites. The role of nitrogen in enhancing the magnetic moments is also discussed.

Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 degrees C in the as-deposited condition as well as in the postannealed (at 600 degrees C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni3Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200-250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (NixTiySi) at the film-substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region similar to 250-300 nm just above the film substrate interface. (C) 2013 American Vacuum Society.

Gas sensing response analysis of p-type porous chromium oxide thin films

The ethanol sensing properties of porous Cr2O3 thin films deposited by the ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture is reported. The impact of the precursor selection and various deposition parameters on the film crystallinity, surface morphology and stoichiometry are studied using thermo-gravimetric analysis, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and atomic force microscopy techniques. The film morphology exhibits a highly porous nature, as a result of the exothermic combustion reaction during film deposition. The gas sensing properties of these films are investigated in the temperature range of 200-375 degrees C for ethanol. The films show two different regions of response for ethanol above and below 300 degrees C. A good relationship between the response and the ethanol concentration is observed, and is modeled using an empirical relation. The possible mechanism and the surface chemical reactions of ethanol over the chromium oxide surface are discussed.

Effect of low oxygen pressure on structural and magnetic properties of quenched SrFe12O19 thin films

Strontium hexaferrite thin films have been grown on glass substrates at room temperature in oxygen environment by pulsed laser deposition method. The effect of oxygen pressure (p(o2)) on the structural and magnetic properties has been investigated. The as-deposited films were found to be amorphous in nature. The crystallization of these films was achieved by annealing at a temperature of 850 A degrees C in air. The thickness of the film increased with p(o2). The film grown at p(o2) = 0.455 Pa had a clear hexagonal structure. The values of coercivity for the films were found to increase with p(o2).

On Using Nanoporous Alumina Films as Tribological Coating

Anodization of aluminum alloys is a common surface treatment procedure employed for the protection against corrosion. A thin amorphous layer of alumina is formed on the surface of alloy, which seals the alloy surface from the surrounding. This alumina layer being harder than the base aluminum alloy can be useful as a tribological coating. But since this alumina layer is randomly formed with disordered voids and pores, predicting the mechanical properties is difficult. Specific anodizing conditions can be used to form highly ordered anodic nanoporous alumina films 1] on the aluminum alloy surface. These nanoporous alumina layer can be effectively used as a tribological coating, because of the highly ordered controllable geometry and the empty pores which can be used as reservoirs for lubricant.

Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (T-s) on film growth is studied by varying the temperature from 250 to 400 degrees C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at T-s of 300 degrees C. Above 300 degrees C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be >10(4) cm(-1). The films have sheet resistance in the range of 0.05 to 1300 Omega/square Both p and n type films are prepared through this technique without any external doping. (C) 2013 Elsevier B.V. All rights reserved.

Electrocaloric Effect in 0.85PMN-0.15PT Thin Films Deposited by Pulsed Laser Deposition

The electrocaloric effect (ECE) of 0.85PbMg(1/3)Nb(2/3)O(3-)0.15PbTiO(3) (0.85PMN-0.15PT) thin films deposited on (111) Pt/TiO2/SiO2/Si substrate by pulsed laser deposition (PLD) has been calculated. The reversible adiabatic temperature was calculated indirectly using the Maxwell's relation Delta T = -T/C rho integral(E2)(E1) (partial derivative P/partial derivative T)(sigma,E)dE. Permittivity and P-E measurements show an anomaly at 11 degrees C on heating only. This anomaly previously reported are claimed to arise due to the PNR depolarization upon heating. The absence of this anomaly during cooling suggests that no structural phase transition takes place. A negative electrocaloric effect is observed which is explained by the increase in the entropy term.

Cu(In,Al)Se-2 thin films by one-step electrodeposition for photovoltaics

Chalcopyrite Cu(In,Al)Se-2 (CIAS) thin films are grown on stainless steel substrate through one-step electrodeposition at room temperature. Indium is partially replaced with aluminum to increase the band gap of CuInSe2 without creating significant change in the original structure. The deposition potential is optimized at -0.8 V (vs. SCE) and annealing of the films is performed in vacuum to remove binary phases present in the as-deposited films. In/Al ratio is varied from 1/9 to 8/2, to find the suitability for solar cell fabrication. For In/Al ratio of less than 8/2, CuAlSe2 phase is formed in the film in addition to the CIAS phase. Depth profile X-ray photoelectron spectroscopy analysis of the CIAS sample prepared with In/Al ratio of 8/2 in the precursor solution confirmed the existence of single phase CIAS throughout the film. This film showed p-type conductivity while the rest of the samples with In/Al ratio less than 8/2 showed n-type conductivity. The band gap of the film varied from 1.06 to 1.45 eV, with variation in deposition potential. Structural, optical, morphological, compositional and electrical characterizations are carried out to establish the suitability of this film for solar cell fabrication. (C) 2013 Elsevier B.V. All rights reserved.

Platinum surface additive based nanostructured CuO films for ethanol sensing

In the present work, Platinum (Pt)/Copper (II) oxide (CuO) thin film based ethanol sensors were fabricated by sputtering of Pt in varying concentrations over pre-sputtered nanostructured CuO films. The responses of these sensors as a function of Pt concentrations were studied using operating temperature modulation (200-450 °C) and ethanol concentration modulation (100-2500 ppm). During these modulations, it was found that the sensing response was maximum at operating temperature near 400 °C for all the samples irrespective of the Pt concentration dispersed over them. Moreover, the sensing behavior improves for lower Pt concentration (Pt/CuO-60s) and deteriorates for higher Pt concentration (Pt/CuO-120s). In comparison with bare CuO sample, the sensitivity of Pt/CuO-60s increased up to 22% in the linear range and 33% for maximum ethanol concentration. Hence, the well dispersed optimum Pt additive concentration improves the overall sensing behavior including sensitivity, linear working range and response as well as recovery time.

Nanostructured CexZn1-xO thin films: Influence of Ce doping on the structural, optical and electrical properties

Thin films of CexZn1-xO thin films were deposited on glass substrates at 400 degrees C by nebulizer spray pyrolysis technique. Ce doping concentration (x) was varied from 0 to 10%, in steps of 2.5%. X-ray diffraction reveals that all the films have polycrystalline nature with hexagonal crystal structure and high preferential orientation along (002) plane. Optical parameters such as; transmittance, band gap energy, refractive index (n), extinction coefficient (k), complex dielectric constants (epsilon(r), epsilon(i)) and optical conductivity (sigma(r), sigma(i)) have been determined and discussed with respect to Ce concentration. All the films exhibit transmittance above 80% in the wavelength range from 330 to 2500 nm. Optical transmission measurements indicate the decrease of direct band gap energy from 3.26 to 3.12 eV with the increase of Ce concentration. Photoluminescence spectra show strong near band edge emission centered similar to 398 nm and green emission centered similar to 528 nm with excitation wavelength similar to 350 nm. High resolution scanning electron micrographs indicate the formation of vertical nano-rod like structures on the film surface with average diameter similar to 41 nm. Electrical properties of the Ce doped ZnO film have been studied using ac impedance spectroscopy in the frequency range from 100 Hz-1 MHz at different temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.