Caractérisation phénotypique et génotypique de Campylobacter jejuni et évaluation d’une stratégie de contrôle de la colonisation du poulet de chair par ce pathogène alimentaire

Campylobacter jejuni est l’agent causal de la campylobactériose, infection bactérienne importante en santé publique. Un des vecteurs de transmission de C. jejuni pour l’humain est le poulet via la chaîne alimentaire. Les mécanismes impliqués dans colonisation caecale commensale des oiseaux par C. jejuni sont toujours peu caractérisés, bien qu’une meilleure compréhension de ces mécanismes puisse apporter des solutions pour le contrôle du pathogène à la ferme. Cette étude avait pour buts de caractériser les propriétés phénotypiques et les facteurs génétiques impliqués dans la colonisation du poulet par C. jejuni et d’identifier de nouveaux mécanismes impliqués dans cette association. Des souches, issues d’élevages conventionnels échantillonnés en 2003 et en 2008 ainsi que d’élevages biologiques, ont été caractérisées afin d’obtenir leur profil de résistance aux antibiotiques, leur autoagglutination et leur chimiotactisme. Les souches des élevages conventionnels ont de plus été caractérisées pour leur capacité à adhérer et envahir une culture primaire de cellules caecales de poulet. Une puce à ADN a été développée pour détecter la présence de 254 gènes et variants associés à la colonisation des poulets ainsi qu’à la résistance aux antibiotiques chez les souches issues d’élevages conventionnels. Les propriétés phénotypiques et la présence de certains gènes chez les souches ont par la suite été comparées. Finalement, des souches ayant des caractéristiques différentes ont été utilisées dans un modèle de colonisation du poulet pour évaluer l’efficacité d’un nouvel additif alimentaire à base d’acides organiques et d’huiles essentielles sur le contrôle de C. jejuni. Les propriétés phénotypiques des souches étaient très variées et n’étaient pas corrélées entre elles, à l’exception de l’adhésion et de l’invasion. L’analyse génétique a révélé que le contenu en gènes des souches était variable, notamment au niveau des gènes de l’enveloppe bactérienne, au flagelle, aux récepteurs du chimiotactisme et à la résistance à l’arsenic. Les souches de 2003 et de 2008 étaient semblables lorsque leur contenu en gènes ainsi que leurs propriétés phénotypiques étaient comparés. Des gènes possiblement associés à un fort ou un faible potentiel de colonisation ont été identifiés. L’additif alimentaire a diminué la contamination des carcasses bien qu’une augmentation de la colonisation intestinale ait été observée pour certaines souches. La moitié des lots de poulets d’origine biologique étaient positifs pour C. jejuni. Les souches issues de ce type d’élevage étaient peu résistantes aux antibiotiques et possédaient des phénotypes variés. Cette étude a permis de mieux définir les caractéristiques importantes de C. jejuni qui sont associées à la colonisation intestinale du poulet. Elle a établi pour la première fois au Canada la présence du pathogène dans les élevages de poulets biologiques. Cette étude fait partie des quelques études qui décrivent la présence des gènes de colonisation et de résistance aux antibiotiques dans une collection de souches issues uniquement du poulet. Elle a également remis en doute l’importance de certains gènes dans la colonisation. La caractérisation exhaustive des souches a également permis d’identifier de nouveaux gènes possiblement associés à la colonisation de poulet par C. jejuni. Finalement, elle a indiqué que l’utilisation d’un mélange d’huiles essentielles et d’acide organique encapsulés pouvait être efficace pour réduire la contamination des carcasses de poulet par C. jejuni et que son effet était souche-dépendant.

Investigations on Dezincification of Brass and Epoxy Coated Brass

Brasses are widely used as constructional materials in marine environment due to their anticorrosive,antifouling and mechanical properties.However, its resistance to corrosion and fouling may vary according to local marine environmental condition and the seasons.The dezincification of brass is one of the forms of selective corrosion which has attracted the attention of researchers for the last two decades.Many of the dezincification mechanistic studies have been performed in noncomplex media and hence their conclusions cannot be extended to esturine water,which is of great significance since brass is extensively used in marine environment.Inhibited α brasses are largely immune to dezincication and the effect of tin and arsenic addition to α/beta brasses is not so reliable in controlling the dezincification. There have been many cases of dezincification in duplex brasses in both freshwater and seawater.Though there is some protection methods such as inhibitors,electro deposition and electro polymerization,there is no reliable method of inhibiting the dezincification of two-phase brass.Organic coatings are effectively used for the protection metals due to their capacity to act a physical barrieer between the metal surface and corrosive environment.Hence,pure epoxy coating is selected for this as it has antocorrosiion effect on brass.The dezincification behaviour of brass of the present study has been highlighted in terms of corrosion rate,weight gain/loss,corrosion current and polarization resistence,open circuit potential,dezincification factor. The marine fouling as biomass on brass was assessed and presented in this thesis, The physicochemical properties of estuarine water were correlated with corrosion behaviour of brass.The deterioration of the brass subjected to the effect of estuarine water was also investigated as a measure of loss in mechanical properties such as tensile strength,yield strength,percntage elongation and percentage reduction in area.To validate dezincification data,visual observation,spot analysis,surface morphology before and after removal of corrosion products and corrosion product analysis were performed.The dezincification behavior of epoxy coated brass of the present study has beenhighlighted in terms of corrosion rate ,weight gain/loss,corrosion current and polarization resistance,open circuit potential.dezincification factor.The marine fouling as biomass on epoxy coated brass subjeted to the effect of estuarine water was also investigated as ameasure of loss in mechanical properties such as tensile strength,percentage elongation and percentage reduction in area.The results of dezincification behavior of brass and epoxy coated brass in Cochin estuary water has been presented and discussed.Attempt has been made to correlate the dezincification behavior of brass with epoxy coated brass.

Dezincification of Epoxy Coated Brass in Cochin Estuary, India

Inhibited α brasses are largely immune to dezincification in most water, but the effect of tin and arsenic addition to α/β brasses is not so reliable or predictable in controlling the problem. There have been many cases of dezincification in duplex brasses in both fresh water and seawater. There is no reliable method of inhibiting the dezincification of two-phase brass despite there are some protection methods such as inhibitors, electro deposition and electro polymerization. Organic coatings are effectively used for the protection of metals due to their capacity to act as a physical barrier between the metal surface and corrosive environment. Hence, epoxy coating on brass was applied and effect of this against dezincification in Cochin estuarine water over a period of one year was studied and reported in this paper

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications

In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers. The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due to smaller lattice mismatch the formation of circular QDs, elongated QDs and quantum wires is possible. The influence of the different growth conditions, such as the growth temperature, beam equivalent pressure, amount of deposited material on the formation of the QDs is investigated. It was already demonstrated that the formation process of QDs can be changed by the arsenic species. The formation of more round shaped QDs was observed during the growth of QDs with As2, while for As4 dash-like QDs. In this work only As2 was used for the QD growth. Different growth parameters were investigated to optimize the optical properties, like photoluminescence linewidth, and to implement those QD ensembles into laser structures as active medium. By the implementation of those QDs into laser structures a full width at half maximum (FWHM) of 30 meV was achieved. Another part of the research includes the investigation of the influence of the layer design of lasers on its lasing properties. QD lasers were demonstrated with a modal gain of more than 10 cm-1 per QD layer. Another achievement is the large signal modulation with a maximum data rate of 15 Gbit/s. The implementation of optimized QDs in the laser structure allows to increase the modal gain up to 12 cm-1 per QD layer. A reduction of the waveguide layer thickness leads to a shorter transport time of the carriers into the active region and as a result a data rate up to 22 Gbit/s was achieved, which is so far the highest digital modulation rate obtained with any 1.55 µm QD laser. The implementation of etch stop layers into the laser structure provide the possibility to fabricate feedback gratings with well defined geometries for the realization of DFB lasers. These DFB lasers were fabricated by using a combination of dry and wet etching. Single mode operation at 1.55 µm with a high side mode suppression ratio of 50 dB was achieved.

Ermittlung der Verlustleistungen in einem Synchron-Tiefsetzsteller mit Niedervolt-GaN-HFETs

Wenn sich in einem wichtigen Bereich der Elektrotechnik ein neues Halbleitermaterial zu etablieren beginnt, weckt dies einerseits Erwartungen der Wirtschaft und Industrie, andererseits kann es eine erhebliche Herausforderung für die Hersteller bedeuten. Nachdem Gallium-Nitrid erstmalig vor 20 Jahren als Transistor verwendet wurde und seit über einer Dekade serienmäßig in der Hochfrequenztechnik eingesetzt wird, erobert es nun die Leistungselektronik. Die ausschlaggebenden Kriterien sind hier die Verwendbarkeit bei höheren Betriebstemperaturen, die Energieeffizienz und die Reduzierung von Größe und Gewicht durch den Betrieb bei höheren Schaltfrequenzen. Die vorliegende Arbeit basiert auf der Motivation zunächst einen möglichst breit angelegten Überblick des ständig wachsenden Angebotsspektrums zu geben, das mittlerweile durch die vielfältigen Varianten der verfügbaren Transistoren an Übersichtlichkeit etwas verloren hat. Nach einer ausführlichen Erläuterung der physikalischen und elektrischen Eigenschaften, werden die jeweiligen Typen in überschaubaren Abschnitten beschrieben und im Anschluss tabellarisch zusammengefasst. Die elektrischen Eigenschaften der hier ausgewählten EPC 2010 eGaN-HFETs (200 V Spannungsklasse) werden eingehend diskutiert. Das Schaltverhalten der eGaN-HFETs in einem Synchron-Tiefsetzsteller wird untersucht und modelliert. Eine Analyse aller in den GaN-FETs entstehenden Verlustleistungen wird durchgeführt. Zur Abschätzung der dynamischen Verlustleistungen wird eine analytische Methode umgesetzt und weiter entwickelt. Um die Vorteile der erhöhten Schaltfrequenzen nutzen zu können, erfolgt eine sehr ausführliche Betrachtung der notwendigen magnetischen Komponenten, deren Auswahl- und Verwendungskriterien im Detail untersucht, evaluiert und aufgegliedert werden. Diese werden im praktischen Teil ausgiebig in Verbindung mit den GaN-Transistoren ausgesucht und messtechnisch bewertet. Theoretische Betrachtungen hinsichtlich der Grenzen, die magnetische Bauelemente schnell schaltenden Halbleitern auferlegen, werden durchgeführt. Da die untersuchten Niedervolt-GaN-HFETs quasi kein Gehäuse haben, ist eine korrekte Strommessung nicht realisierbar. Am praktischen Beispiel eines Synchron-Tiefsetzstellers werden zwei experimentelle Methoden entwickelt, mit deren Hilfe die Verlustleistungen in den EPC 2010 eGaN-HFETs ermittelt werden. Anschließend wird das Verbesserungspotential der GaN-Leistungstransistoren erläutert sowie deren Anwendungsbereiche diskutiert.

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip (needle shape) to flat tip (rod shape). These kinds of structure are useful in laser and field emission application.

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Growth of ZnO Nanorods on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip with high aspect ratio to flat tip with smaller aspect ratio. These kinds of structure are useful in laser and field emission application.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

[177Lu – DOTA – Tyr3] – OCTREOTATE para el tratamiento de tumores neuroendocrinos gastroenteropancreáticos. Revisión sistemática de la literatura.

Introducción: los tumores neuroendocrinos gastroenteropancreáticos se diagnostican en estadio avanzado en 60 - 80% de los pacientes y las opciones terapéuticas son limitadas. Se realizó una revisión sobre el beneficio clínico del tratamiento con [177Lu - DOTA - Tyr3] - Octreotate en pacientes con enfermedad metastásica o inoperable. Objetivos: evaluar la eficacia, impacto en calidad de vida y toxicidad de la terapia con 177Lu DOTATE en pacientes con tumores neuroendocrinos gastroenteropancreáticos avanzados. Materiales y Métodos: se condujo una revisión sistemática de la literatura mediante la búsqueda de estudios clínicos prospectivos y retrospectivos en bases electrónicas (MEDLINE, EMBASE, LILACS, SCIELO, OVID y la Biblioteca Cochrane) de cualquier idioma, año y estado de publicación. Se incluyeron 5 estudios, por la heterogeneidad existente entre los estudios no se realizó un metaanálisis. Resultados: la respuesta tumoral global fue del 45 - 57%, la enfermedad permaneció estable en 27% - 38% y progresó en 6% - 21% de casos en las series incluidas. El tiempo libre de progresión osciló entre 31 - 40 meses y la sobrevida global de 31– 51 meses. Se observó toxicidad hematológica grado 3-4 hasta en 9.5% de pacientes. Hubo mejoría significativa en la calidad de vida de pacientes tratados con 177LuDOTATATE. Conclusiones: la terapia con 177Lu- DOTATATE ofrece un beneficio clínico a los pacientes con tumores neuroendocrinos bien diferenciados avanzados por su impacto positivo en calidad de vida, control de síntomas, ralentiza la progresión tumoral y su toxicidad es baja.

Exposición laboral de agentes químicos carcinógenos presentes en las empresas afiliadas a una ARL en Colombia 2011-2014

Objetivo: Caracterizar los sectores económicos con mayor susceptibilidad de exposición a agentes químicos carcinógenos, categorizados en el grupo 1 por la Agencia Internacional para la Investigación del Cáncer IARC (formaldehído, polvo de madera, benceno y sílice cristalina) afiliadas a una Administradora de riesgos Laborales (ARL) en Colombia entre el periodo 2011 a 2014. Método: Estudio de tipo descriptivo retrospectivo con datos históricos obtenidos desde 2011 hasta 2014. De acuerdo con el número de mediciones que se realizó en cada área y cargo de las empresas objeto de estudio, se utilizó la medición basal para determinar el estado inicial y evaluar de manera concurrente la exposición de estos cuatro agentes químicos. Resultados: En total se obtuvieron 201 mediciones de higiene industrial para cuatro agentes químicos carcinógenos. Los resultados mostraron que índice de riesgo de la exposición a agentes químicos carcinógenos en diferentes empresas, se encuentra en algunos casos en niveles altos o críticos dado que superar los valores máximos permisibles definidos por la Conferencia Americana de Higienistas Industriales de Gobierno (ACGIH). Conclusión: Los trabajadores de diferentes empresas en Colombia están expuestas a diferentes tipos de concentraciones por agentes químicos cancerígenos. Las concentraciones ambientales obtenidas en el ambiente laboral en algunos casos excedieron las concentraciones máximas permitidas, por lo que se recomienda que las empresas e instituciones del país fortalezcan las medidas de prevención, vigilancia y control para minimizar los riegos a que pueden estar expuestos sus trabajadores.

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05de of the composition variations and the mean strain

Avaluació de la toxicitat de metalls pesants i arsènic en diferents models biològics

En aquest estudi, la toxicitat de diversos metalls pesants i l'arsènic va ser analitzada utilitzant diferents models biològics. En la primera part d'aquest treball, el bioassaig de toxicitat Microtox, el qual està basat en la variació de l'emissió lumínica del bacteri luminiscent Vibrio fischeri, va ser utilitzat per establir les corbes dosi-resposta de diferents elements tòxics com el Zn(II), Pb(II), Cu(II), Hg(II), Ag(I), Co(II), Cd(II), Cr(VI), As(V) i As(III) en solucions aquoses. Els experiments es varen portar a terme a pH 6.0 i 7.0 per tal de mostrar que el pH pot influir en la toxicitat final mesurada d'alguns metalls degut als canvis relacionats amb la seva especiació química. Es varen trobar diferents tipus de corbes dosi-resposta depenent del metall analitzat i el pH del medi. En el cas de l'arsènic, l'efecte del pH en la toxicitat de l'arsenat i l'arsenit es va investigar utilitzant l'assaig Microtox en un rang de pHs comprès entre pH 5.0 i 9.0. Els valors d'EC50 determinats per l'As(V) disminueixen, reflectint un augment de la toxicitat, a mesura que el pH de la solució augmenta mentre que, en el cas de l'As(III), els valors d'EC50 quasi bé no varien entre pH 6.0 i 8.0 i només disminueixen a pH 9.0. HAsO42- i H2AsO3- es varen definir com les espècies més tòxiques. Així mateix, una anàlisi estadística va revelar un efecte antagònic entre les espècies químiques d'arsenat que es troben conjuntament a pH 6.0 i 7.0. D'altra banda, els resultats de dos mètodes estadístics per predir la toxicitat i les possibles interaccions entre el Co(II), Cd(II), Cu(II), Zn(II) i Pb(II) en mescles binàries equitòxiques es varen comparar amb la toxicitat observada sobre el bacteri Vibrio fischeri. L'efecte combinat d'aquests metalls va resultar ser antagònic per les mescles de Co(II)-Cd(II), Cd(II)-Zn(II), Cd(II)-Pb(II) i Cu(II)-Pb(II), sinèrgic per Co(II)-Cu(II) i Zn(II)-Pb(II) i additiu en els altres casos, revelant un patró complex de possibles interaccions. L'efecte sinèrgic de la combinació Co(II)-Cu(II) i la forta disminució de la toxicitat del Pb(II) quan es troba en presència de Cd(II) hauria de merèixer més atenció quan s'estableixen les normatives de seguretat ambiental. La sensibilitat de l'assaig Microtox també va ser determinada. Els valors d'EC20, els quals representen la toxicitat llindar mesurable, varen ser determinats per cada element individualment i es va veure que augmenten de la següent manera: Pb(II) < Ag(I) < Hg(II)  Cu(II) < Zn(II) < As(V) < Cd(II)  Co(II) < As(III) < Cr(VI). Aquests valors es varen comparar amb les concentracions permeses en aigues residuals industrials establertes per la normativa oficial de Catalunya (Espanya). L'assaig Microtox va resultar ser suficientment sensible per detectar els elements assajats respecte a les normes oficials referents al control de la contaminació, excepte en el cas del cadmi, mercuri, arsenat, arsenit i cromat. En la segona part d'aquest treball, com a resultats complementaris dels resultats previs obtinguts utilitzant l'assaig de toxicitat aguda Microtox, els efectes crònics del Cd(II), Cr(VI) i As(V) es varen analitzar sobre la taxa de creixement i la viabilitat en el mateix model biològic. Sorprenentment, aquests productes químics nocius varen resultar ser poc tòxics per aquest bacteri quan es mesura el seu efecte després de temps d'exposició llargs. Tot i això, en el cas del Cr(VI), l'assaig d'inhibició de la viabilitat va resultar ser més sensible que l'assaig de toxicitat aguda Microtox. Així mateix, també va ser possible observar un clar fenomen d'hormesis, especialment en el cas del Cd(II), quan s'utilitza l'assaig d'inhibició de la viabilitat. A més a més, diversos experiments es varen portar a terme per intentar explicar la manca de toxicitat de Cr(VI) mostrada pel bacteri Vibrio fischeri. La resistència mostrada per aquest bacteri podria ser atribuïda a la capacitat d'aquest bacteri de convertir el Cr(VI) a la forma menys tòxica de Cr(III). Es va trobar que aquesta capacitat de reducció depèn de la composició del medi de cultiu, de la concentració inicial de Cr(VI), del temps d'incubació i de la presència d'una font de carboni. En la tercera part d'aquest treball, la línia cel·lular humana HT29 i cultius primaris de cèl·lules sanguínies de Sparus sarba es varen utilitzar in vitro per detectar la toxicitat llindar de metalls mesurant la sobreexpressió de proteines d'estrès. Extractes de fangs precedents de diverses plantes de tractament d'aigues residuals i diferents metalls, individualment o en combinació, es varen analitzar sobre cultius cel·lulars humans per avaluar el seu efecte sobre la taxa de creixement i la capacitat d'induir la síntesi de les proteïnes Hsp72 relacionades amb l'estrès cel·lular. No es varen trobar efectes adversos significatius quan els components s'analitzen individualment. Nogensmenys, quan es troben conjuntament, es produeix un afecte advers sobre tan la taxa de creixement com en l'expressió de proteins d'estrès. D'altra banda, cèl·lules sanguínies procedents de Sparus sarba es varen exposar in vitro a diferents concentracions de cadmi, plom i crom. La proteïna d'estrès HSP70 es va sobreexpressar significativament després de l'exposició a concentracions tan febles com 0.1 M. Sota les nostres condicions de treball, no es va evidenciar una sobreexpressió de metal·lotioneïnes. Nogensmenys, les cèl·lules sanguínies de peix varen resultar ser un model biològic interessant per a ser utilitzat en anàlisis de toxicitat. Ambdós models biològics varen resultar ser molt adequats per a detectar acuradament la toxicitat produïda per metalls. En general, l'avaluació de la toxicitat basada en l'anàlisi de la sobreexpressió de proteïnes d'estrès és més sensible que l'avaluació de la toxicitat realitzada a nivell d'organisme. A partir dels resultats obtinguts, podem concloure que una bateria de bioassaigs és realment necessària per avaluar acuradament la toxicitat de metalls ja que existeixen grans variacions entre els valors de toxicitat obtinguts emprant diferents organismes i molts factors ambientals poden influir i modificar els resultats obtinguts.