977 resultados para silicon photonics
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In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device (WDM) for the visible light spectrum. The WDM device is a glass/ITO/a-SiC:H (p-i-n)/ a-SiC:H(-p) /Si:H(-i)/SiC:H (-n)/ITO heterostructure in which the generated photocurrent at different values of the applied bias can be assigned to the different optical signals. The device was characterized through spectral response measurements, under different electrical bias. Demonstration of the device functionality for WDM applications was done with three different input channels covering wavelengths within the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. The influence of the optical power density was also analysed. An electrical model, supported by a numerical simulation explains the device operation. Short range optical communications constitute the major application field, however other applications are also foreseen.
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Dissertação para obtenção do grau de Mestre em Engenharia Electrotécnica Ramo de Energia
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações
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Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.
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Agências financiadoras: National Natural Science Foundation of China - 61204077; Shenzhen Science and Technology Innovation Commission - JCYJ20120614150521967
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This communication presents a novel kind of silicon nanomaterial: freestanding Si nanowire arrays (Si NWAs), which are synthesized facilely by one-step template-free electro-deoxidation of SiO2 in molten CaCl2. The self-assembling growth process of this material is also investigated preliminarily.
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Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações
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The tribological response of multilayer micro/nanocrystalline diamond coatings grown by the hot filament CVD technique is investigated. These multigrade systems were tailored to comprise a starting microcrystalline diamond (MCD) layer with high adhesion to a silicon nitride (Si3N4) ceramic substrate, and a top nanocrystalline diamond (NCD) layer with reduced surface roughness. Tribological tests were carried out with a reciprocating sliding configuration without lubrication. Such composite coatings exhibit a superior critical load before delamination (130–200 N), when compared to the mono- (60–100 N) and bilayer coatings (110 N), considering ∼10 µm thick films. Regarding the friction behaviour, a short-lived initial high friction coefficient was followed by low friction regimes (friction coefficients between 0.02 and 0.09) as a result of the polished surfaces tailored by the tribological solicitation. Very mild to mild wear regimes (wear coefficient values between 4.1×10−8 and 7.7×10−7 mm3 N−1 m−1) governed the wear performance of the self-mated multilayer coatings when subjected to high-load short-term tests (60–200 N; 2 h; 86 m) and medium-load endurance tests (60 N; 16 h; 691 m).
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Todos nós estamos familiarizados com os painéis fotovoltaicos comuns, os silicon wafer-based (“bolacha/pastilha” de silício), que possuem atualmente uma quota superior a 80% [1-3] no mercado solar fotovoltaico. Desde o seu “aparecimento” em 1950, foram realizados avanços em diferentes vertentes, como a eficiência, durabilidade, custos e tecnologias de produção [2, 4, 5], sendo que no início deste século se começaram a desenvolver e a criar expectativas positivas crescentes acerca do que se designa de células fotovoltaicas de película fina ou TFPC (thin film photovoltaic cells). Certamente, já todos ouvimos notícias nos últimos anos do seu desenvolvimento e de aplicações variadas (vestuário, fachadas, etc), pelo que este artigo visa elucidar o leitor acerca do que são, do seu grau de investigação e desenvolvimento (I&D) e da posição no mercado atual e futura.
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This paper presents a micro power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT fractional open circuit voltage (V-OC) technique is implemented by an asynchronous state machine (ASM) that creates and dynamically adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge sharing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm(2) in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm(2), is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m(2). After starting-up, the system requires an irradiance of only 0.18 W/m(2) (18 mu W/cm(2)) to remain operating. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mu W. These values are, to the best of the authors' knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3 % for an input power of 48 mu W, which is comparable with reported values from circuits operating at similar power levels.
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A 10 kJ electromagnetic forming (EMF) modulator with energy recovery based on two resonant power modules, each containing a 4.5 kV/30-kA silicon controlled rectifier, a 1.11-mF capacitor bank and an energy recovery circuit, working in parallel to allow a maximum actuator discharge current amplitude and rate of 50 kA and 2 kA/mu s was successfully developed and tested. It can be plugged in standard single phase 230 V/16 A mains socket and the circuit is able to recover up to 32% of its initial energy, reducing the charging time of conventional EMF systems by up to 68%.
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Micro-abrasion wear tests with ball-cratering configuration are widely used. Sources of variability are already studied by different authors and conditions for testing are parameterized by BS EN 1071-6: 2007 standard which refers silicon carbide as abrasive. However, the use of other abrasives is possible and allowed. In this work, ball-cratering wear tests were performed using four different abrasive particles of three dissimilar materials: diamond, alumina and silicon carbide. Tests were carried out under the same conditions on a steel plate provided with TiB2 hard coating. For each abrasive, five different test durations were used allowing understanding the initial wear phenomena. Composition and shape of abrasive particles were investigated by SEM and EDS. Scar areas were observed by optical and electronic microscopy in order to understand the wear effects caused by each of them. Scar geometry and grooves were analyzed and compared. Wear coefficient was calculated for each situation. It was observed that diamond particles produce well-defined and circular wear scars. Different silicon carbide particles presented dissimilar results as consequence of distinct particle shape and size distribution.
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In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.
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The rapid increase in the use of microprocessor-based systems in critical areas, where failures imply risks to human lives, to the environment or to expensive equipment, significantly increased the need for dependable systems, able to detect, tolerate and eventually correct faults. The verification and validation of such systems is frequently performed via fault injection, using various forms and techniques. However, as electronic devices get smaller and more complex, controllability and observability issues, and sometimes real time constraints, make it harder to apply most conventional fault injection techniques. This paper proposes a fault injection environment and a scalable methodology to assist the execution of real-time fault injection campaigns, providing enhanced performance and capabilities. Our proposed solutions are based on the use of common and customized on-chip debug (OCD) mechanisms, present in many modern electronic devices, with the main objective of enabling the insertion of faults in microprocessor memory elements with minimum delay and intrusiveness. Different configurations were implemented starting from basic Components Off-The-Shelf (COTS) microprocessors, equipped with real-time OCD infrastructures, to improved solutions based on modified interfaces, and dedicated OCD circuitry that enhance fault injection capabilities and performance. All methodologies and configurations were evaluated and compared concerning performance gain and silicon overhead.
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We report on a simple method to obtain surface gratings using a Michelson interferometer and femtosecond laser radiation. In the optical setup used, two parallel laser beams are generated using a beam splitter and then focused using the same focusing lens. An interference pattern is created in the focal plane of the focusing lens, which can be used to pattern the surface of materials. The main advantage of this method is that the optical paths difference of the interfering beams is independent of the distance between the beams. As a result, the fringes period can be varied without a need for major realignment of the optical system and the time coincidence between the interfering beams can be easily monitored. The potential of the method was demonstrated by patterning surface gratings with different periods on titanium surfaces in air.