995 resultados para semiconductor sensor


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Two new maximum power point tracking algorithms are presented: the input voltage sensor, and duty ratio maximum power point tracking algorithm (ViSD algorithm); and the output voltage sensor, and duty ratio maximum power point tracking algorithm (VoSD algorithm). The ViSD and VoSD algorithms have the features, characteristics and advantages of the incremental conductance algorithm (INC); but, unlike the incremental conductance algorithm which requires two sensors (the voltage sensor and current sensor), the two algorithms are more desirable because they require only one sensor: the voltage sensor. Moreover, the VoSD technique is less complex; hence, it requires less computational processing. Both the ViSD and the VoSD techniques operate by maximising power at the converter output, instead of the input. The ViSD algorithm uses a voltage sensor placed at the input of a boost converter, while the VoSD algorithm uses a voltage sensor placed at the output of a boost converter. © 2011 IEEE.

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This paper reports a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model. Using this model, recently reported experimental results have been correctly predicted and the effects of electrical and optical pumping on the conversion speed, modulation index, and phase variation of the converted signal have been considered. The model predicts, in agreement with experimental data, that recovery rates as low as 12 ps are possible if signal and pump powers in excess of 14 dBm are used. It also indicates that conversion speeds up to 40 Gb/s may be achieved with less than 3 dB dynamic penalty. The employment of cross-phase modulation increases the speed allowing, for example, an improvement to 60 Gb/s with an excess loss penalty less than 1 dB.