947 resultados para matrix assisted laser desorption ionization time of flight mass spectrometry


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The two lowest T = 3/2 levels in 21Na have been studied in the 19F(3He, n), 20Ne (p,p) and 20Ne (p,p’) reactions, and their excitation energies, spins, parities and widths have been determined. In a separate investigation, branching ratios were measured for the isospin-nonconserving particle decays of the lowest T = 3/2 levels in 17O and 17F to the ground state and first two excited states of 16O, by studying the 15N(3He,n) 17F*(p) 16O and 18O(3He, α)17O*(n) 16O reactions.

The 19F(3He,n) 21Na reaction was studied at incident energies between 4.2 and 5.9 MeV using a pulsed-beam neutron-time-of-flight spectrometer. Two T = 3/2 levels were identified at excitation energies of 8.99 ± 0.05 MeV (J > ½) and 9.22 ± 0.015 MeV (J π = ½+, Γ ˂ 40 keV). The spins and parities were determined by a comparison of the measured angular distributions with the results of DWBA calculations.

These two levels were also obsesrved as isospin-forbidden resonances in the 20Ne(p,p) and 20Ne(p,p’) reactions. Excitation energies were measured and spins, parities, and widths were determined from a single level dispersion theory analysis. The following results were obtained:

Ex = 8.973 ± 0.007 MeV, J π = 5/2 + or 3/2+, Γ ≤ 1.2 keV,

Γpo = 0.1 ± 0.05 keV; Ex = 9.217 ± 0.007 MeV, Jπ = ½ +,

Γ = 2.3 ± 0.5 keV, Γpo = 1.1 ± 0.3 keV.

Isospin assignments were made on the basis of excitation energies, spins, parities, and widths.

Branching ratios for the isospin-nonconserving proton decays of the 11.20 MeV, T = 3/2 level in 17F were measured by the 15N(3He,n) 17 F*(p) 16O reaction to be 0.088 ± 0.016 to the ground state of 16O and 0.22 ± 0.04 to the unresolved 6.05 and 6.13 MeV levels of 16O. Branching ratios for the neutron decays of the analogous T = 3/2 level, at 11.08 MeV in 17O, were measured by the 16O(3He, α)17O*(n)16O reaction to be 0.91 ± 0.15 to the ground state of 16O and 0.05 ± 0.02 to the unresolved 6.05 and 6.13 MeV states. By comparing the ratios of reduced widths for the mirror decays, the form of the isospin impurity in the T = 3/2 levels is shown to depend on Tz.

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The (He3, n) reactions on B11, N15, O16, and O18 targets have been studied using a pulsed-beam time-of-flight spectrometer. Special emphasis was placed upon the determination of the excitation energies and properties of states with T = 1 (in Ne18), T = 3/2 (in N13 and F17) and T = 2 (in Ne20). The identification of the T = 3/2 and T = 2 levels is based on the structure of these states as revealed by intensities and shapes of angular distributions. The reactions are interpreted in terms of double stripping theory. Angular distributions have been compared with plane and distorted wave stripping theories. Results for the four reactions are summarized below:

1) O16 (He3, n). The reaction has been studied at incident energies up to 13.5 MeV and two previously unreported levels in Ne18 were observed at Ex = 4.55 ± .015 MeV (Γ = 70 ± 30 keV) and Ex = 5.14 ± .018 MeV (Γ = 100 ± 40 keV).

2) B11 (He3, n). The reaction has been studied at incident energies up to 13.5 MeV. Three T = 3/2 levels in N13 have been identified at Ex = 15.068 ± .008 MeV (Γ ˂ 15 keV), Ex = 18.44 ± .04, and Ex 18.98 ± .02 MeV (Γ = 40 ± 20 keV).

3) N15 (He3, n). The reaction has been studied at incident energies up to 11.88 MeV. T = 3/2 levels in F17 have been identified at Ex = 11.195 ± .007 MeV (Γ ˂ 20 keV), Ex = 12.540 ± .010 MeV (Γ ˂ 25 keV), and Ex = 13.095 ± .009 MeV (Γ ˂ 25 keV).

4) O18 (He3, n). The reaction has been studied at incident energies up to 9.0 MeV. The excitation energy of the lowest T = 2 level in Ne20 has been found to be 16.730 ± .006 MeV (Γ ˂ 20 keV).

Angular distributions of the transitions leading to the above higher isospin states are well described by double stripping theory. Analog correspondences are established by comparing the present results with recent studies (t, p) and (He3, p) reactions on the same targets.

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In the Time of the Butterflies é um romance da escritora dominicana-americana Julia Alvarez sobre a vida e a morte das Borboletas, Las Mariposas, codinome das irmãs Mirabal, membros de um movimento clandestino contra o regime ditatorial de Rafael Leonidas Trujillo na República Dominicana, que se tornaram símbolos da luta contra o Trujillato depois de serem assassinadas a mando do ditador. Essa dissertação tem como objetivo expor como forma literária e contexto social estão diretamente relacionados nesse romance. Ela defende a ideia de que o borramento de três gêneros literários distintos metaficção historiográfica, autobiografia e bildungsroman reflete o questionamento das fronteiras entre o privado e o público, o pessoal e o político, o eu e o outro, o individual e o coletivo, a literatura e a história, fato e ficção e história e subjetividade. Ela também tenta mostrar como a problematização dessas dicotomias implica na contestação de noções pré-concebidas de identidade, história e nação

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The laser-induced damage threshold (LIDT) and damage morphology of antireflection (AR) coatings on quartz and sapphire are investigated. A very interesting phenomena is found in the measurement. In the case of a single pulse laser, the LIDT of the AIR coatings on quartz is higher than that of sapphire. On the contrary, for a free-pulse laser, the LIDT of AIR coatings on sapphire is higher than that of quartz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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Laser conditioning effects of the HfO2/SiO2 antireflective (AR) coatings at 1064 nm and the accumulation effects of multishot laser radiation were investigated. The HfO2/SiO2 AR coatings were prepared by E-beam evaporation (EBE). The singleshot and multi-shot laser induced damage threshold was detected following ISO standard 11254-1.2, and the laser conditioning was conducted by three-step raster scanning method. It was found that the single-shot LIDT and multi-shot LIDT was almost the same. The damage mostly > 80% occurred in the first shot under multi-shot laser radiation, and after that the damage occurring probability plummeted to < 5%. There was no obvious enhancement of the laser damage resistance for both the single-shot and multi-shot laser radiation of the AR coatings after laser conditioning. A Nomarski microscope was employed to map the damage morphology, and it found that the damage behavior is defect-initiated for both unconditioned and conditioned samples. © 2004 Elsevier B.V. All rights reserved.

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ZrO2 coatings were deposited on different substrates of Yb:YAG and fused silica by electron beam evaporation. After annealed for 12 h at 673 and 1073 K, respectively, weak absorption of coatings was measured by surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was determined also. The crystalline phase of ZrO2 coatings and the size of the crystal grain were investigated by X-ray diffraction. It was found that microstructure of ZrO2 coatings was dependent on both annealing temperature and substrate structure, and coatings containing monoclinic phases had higher damage threshold than others. Due to the strong absorption of Yb:YAG, damage threshold of coatings on Yb:YAG was much less than that on fused silica. (C) 2004 Elsevier B.V. All rights reserved.

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Two different kinds of 1064 nm high-reflective (HR) coatings, with and without SiO2 protective layer, were prepared by electron beam evaporation. Three-dimensional damage morphology, caused by a Nd:YAG pulsed laser, was investigated for these HR coatings. Development of laser-induced damage on HR coatings was revealed by both temperature field calculation and discrete meso-element simulation. Theoretical results met experimental very well. (C) 2004 Elsevier B.V. All rights reserved.

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Negative ion element impurities breakdown model in HfO2 thin film was reported in this paper. The content of negative ion elements were detected by glow discharge mass spectrum analysis (GDMS); HfO2 thin films were deposited by the electron-beam evaporation method. The weak absorption and laser induced damage threshold (LIDT) of HfO2 thin films were measured to testify the negative ion element impurity breakdown model. It was found that the LIDT would decrease and the absorption would increase with increasing the content of negative ion element. These results indicated that negative ion elements were harmful impurities and would speed up the damage of thin film. (c) 2006 Elsevier B.V. All rights reserved.

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A series of HR coatings, with and without overcoat, were prepared by electron beam evaporation using the same deposition process. The laser-induced damage threshold (LIDT) was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. Damage morphologies of samples were observed by Leica-DMRXE Microscope. The stress was measured by viewing the substrate deformation before and after coatings deposition using an optical interferometer. Reflectance of the samples was measured by Lambda 900 Spectrometer. The theoretical results of electric field distributions of the samples were calculate by thin film design software (TFCalc). It was found that SiO2 overcoat had improved the LIDT greatly, while MgF2 overcoat had little effect on the LIDT because of its high stress in the HR coatings. The damage morphologies were different among HR coatings with and without overcoats. (c) 2005 Elsevier B.V. All rights reserved.

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TiO2 thin films are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for 4h, the spectra and XRD patterns of the TiO2 thin film are obtained. Weak absorption of coatings is measured by the surface thermal lensing technique, and laser-induced damage threshold (LIDT) is determined. It is found that with the increasing annealing temperature, the transmittance of TiO2 films decreases. Especially when coatings are annealed at high temperature over 1173K, the optical loss is very serious. Weak absorption detection indicates that the absorption of coatings decreases firstly and then increases, and the absorption and defects play major roles in the LIDT of TiO2 thin films.

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The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.

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Zirconium dioxide (ZrO2) thin films were deposited on BK7 glass substrates by the electron beam evaporation method. A continuous wave CO2 laser was used to anneal the ZrO2 thin films to investigate whether beneficial changes could be produced. After annealing at different laser scanning speeds by CO2 laser, weak absorption of the coatings was measured by the surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was also determined. It was found that the weak absorption decreased first, while the laser scanning speed is below some value, then increased. The LIDT of the ZrO2 coatings decreased greatly when the laser scanning speeds were below some value. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was defect-initiated both for annealed and as-deposited samples. The influences of post-deposition CO2 laser annealing on the structural and mechanical properties of the films have also been investigated by X-ray diffraction and ZYGO interferometer. It was found that the microstructure of the ZrO2 films did not change. The residual stress in ZrO2 films showed a tendency from tensile to compressive after CO, laser annealing, and the variation quantity of the residual stress increased with decreasing laser scanning speed. The residual stress may be mitigated to some extent at proper treatment parameters. (c) 2007 Elsevier GmbH. All rights reserved.

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Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.

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A series or Ta2O5 films with different SiO2 additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO2 additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO2 overcoat and undercoat, yet was changed by adding an interlayer. SiO2 undercoat. The interlayer improved the LIDT greatly, whereas the SiO2 overcoat had little effect on the LIDT. (C) 2007 Elsevier Ltd. All rights reserved.