984 resultados para Xiong, Culü, 1635-1709,


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A new method using an atomic-resonance filter and deconvolution techniques has been developed to acquire high-resolution spectra of atmospheric Rayleigh-Mie scattering. In the deconvolution process, the difficulty of the undetermined division 0/0 is overcome by a fitting method. Preliminary laboratory experimental results on 90-deg scattering show that with a signal-to-noise ratio of 20, the scattered Rayleigh-Mie spectrum may be retrieved in agreement with the theoretical analysis.

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The differences between the interdiffusion characteristics of Ag/YBa2Cu3O7-x and Al/YBa2Cu3O7-x contact interfaces have been revealed by secondary ion mass spectrometry (SIMS). The different electrical properties of Ag/YBa2Cu3O7-x and YBa2Cu3O7-x films after high temperature treatment are well understood by the SIMS results.

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A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

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利用离子注入和高温退火的方法在Si中生长了C含量为0.6%~1.0%的Si_(1-x)C_x合金,研究了不同注入剂量下Si_(1-x)C_x合金的形成及其在退火过程中的稳定性。如果注入剂量小于引起Si非晶化的剂量,850℃退火后,注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_(1-x)C_x合金。随着注入C离子剂量的增大,注入产生的损伤增强,容易形成Si_(1-x)C_x合金,但注入的剂量增大到一定程度,Si_(1-x)C_x合金的应变将趋于饱和,即只有部分C原子进入晶格位置形成合金相。Si_(1-x)C_X合金一旦形成,在950℃仍比较稳定,而温度高于1000℃,合金的应力将部分释放。随着合金中C原子浓度的升高,合金的稳定性变差。

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SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

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An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.

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We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

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The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

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革菌是指平伏的具有光滑、齿状或瘤状子实层体表面的木材腐朽菌,该类群属于担子菌门(Basidiomycota),担子菌纲(Basidiomycetes),是一类数量较多、组成较为复杂的高等真菌。 革菌具有重要的生态学功能和经济价值。该类群真菌能够降解木质素和纤维素,在森林生态系统中起着关键的降解还原作用;同时,革菌还是重要的生物资源,部分种类能够造成林木病害是林木病原菌;部分革菌具有药用、食用价值;有些种类的革菌还具有重要的工业应用价值。 对采集自我国不同地区、不同森林生态类型中的,以及现保存于中国科学院沈阳应用生态研究所东北生物标本馆(IFP),中国科学院微生物研究所真菌标本馆(HMAS)等国内主要标本馆的非褶菌目木材腐朽菌 — 产丝齿菌属(Hyphodontia J. Erikss.)的真菌标本进行了全面系统的研究,其中自采标本约800余号,馆藏标本600余号。按照Donk,Eriksson和Parmasto提出的传统分类方法对该属的种类进行详细的描述和显微结构绘图,记载了每个种类的寄主、国内外分布及研究标本,并对每种与相似种的联系和区别进行了讨论。我国范围内共记录及描述产丝齿菌属(Hyphodontia)39种,其中共发现新种3个,分别是:头状囊产丝齿菌Hyphodontia capitatocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu,异囊产丝齿菌H. heterocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu 和 似土黄产丝齿菌H. subpallidula H.X. Xiong, Y.C. Dai & Sheng H. Wu;发现中国新记录种2个:冷杉产丝齿菌Hyphodontia abieticola (Bourdot & Galzin) J. Erikss.和弯孢产丝齿菌H. curvispora J. Erikss. & Hjortstam;大陆新记录种7个,分别是:台湾产丝齿菌Hyphodontia formosana Sheng H. Wu & Burds.,羊毛状产丝齿菌Hyphodontia lanata Burds. & Nakasone,膜质产丝齿菌Hyphodontia pelliculae (H. Furuk.) N. Maek.,无锁产丝齿菌Hyphodontia poroideoefibulata Sheng H. Wu,近球孢产丝齿菌Hyphodontia subglobasa Sheng H. Wu,热带产丝齿菌Hyphodontia tropica Sheng H. Wu和管形产丝齿菌Hyphodontia tubuliformis Sheng H. Wu。